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| 20090153479 | Positioning Device of Pointer and Related Method - A positioning device for positioning an aim point of a pointer on a screen includes a screen, a pointer and a processor. The screen is utilized for displaying a plurality of characteristic points having already-known coordinate values. The pointer is utilized for forming an aim point, and includes an image acquisition unit for acquiring an image and a calculation unit for calculating image coordinate values of the plurality of characteristic points in the image. The processor is coupled to the screen and the pointer, and is utilized for establishing a transformation matrix according to the already-known coordinate values of the plurality of characteristic points and the image coordinate values of the plurality of characteristic points in the image and for deciding the position of the aim point according to the transformation matrix. | 06-18-2009 |
| 20100328244 | DISPLACEMENT DETECTION SYSTEM OF AN OPTICAL TOUCH PANEL AND METHOD THEREOF - At a first time, a first image sensor and a second image sensor capture a first image and a second image including images of an object respectively. At a second time, the first image sensor and the second image sensor capture a third image and a fourth image including images of the object respectively. A coordinate calculation device calculates a first coordinate of the object at the first time according to the first image and the second image, and a second coordinate of the object at the second time according to the third image and the fourth image. A coordinate correction device calculates a displacement between the first time and the second time according to the first coordinate and the second coordinate, and corrects an output coordinate of the object at the second time according to the displacement. | 12-30-2010 |
| 20100328270 | OBJECT DETECTION CALIBRATION SYSTEM OF AN OPTICAL TOUCH SCREEN AND METHOD THEREOF - A first image sensor captures a first image of a panel of a touch screen. The first image includes a first object, a second object, a first set of reference marks, a second set of reference marks, and a first boundary mark. The touch screen establishes relationships of relative positions among the first image sensor, the first object, the second object, and the reference marks according to positions of the first object, the second object, and the reference marks in the first image. And the touch screen calculates a relative position between the first image sensor and the panel according to the relationships of relative positions among the first image sensor, the first object, the second object, and the reference marks and relative positions among the first object, the second object, and the panel. | 12-30-2010 |
| 20110193823 | Optical sensing system - An optical sensing system includes a sensing area, a reflective mirror, a first image-sensing device, a second image-sensing device, and a processing circuit. The sensing area is an area in which a plurality of pointing objects may execute touch operation. The reflective mirror generates a mirror image of the sensing area. The first image-sensing device and the second image-sensing device respectively capture images including all or part of the pointing objects in the sensing area, and all or part of the pointing objects in the reflective mirror. The processing circuit generates candidate coordinates according to the images captured by the first and the second image-sensing devices, and obtains the locations of the pointing objects from the candidate coordinates by means of the symmetric relationship between the point objects and the corresponding mirror images with respect to the reflective mirror. In this way, the optical sensing system can perform multi-touch operation. | 08-11-2011 |
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| 20100113093 | Serial Transmission Interface between an Image Sensor and a Baseband Circuit - A serial transmission interface between an image sensor and a baseband circuit includes a transmission end and a reception end. The transmission end is set in the image sensor, and is utilized for transmitting image data sensed by the image sensor. The reception end is set in the baseband circuit, and is utilized for receiving the image data transmitted from the transmission end. The transmission end is one of a master control end and a slave control end, and the reception end is correspondingly the other. | 05-06-2010 |
| 20100220210 | INTERACTIVE SYSTEM CAPABLE OF IMPROVING IMAGE PROCESSING - An interactive system capable of improving image processing includes a reference device, a processing module and a controller. The reference device is used for transmitting and/or reflecting light signals within a predetermined spectrum. The processing module includes an image sensor, an estimation unit and a transmission interface. The image sensor is used for sensing an image so as to generate pixel signals; the estimation unit is used for determining static parameters of at least one image object according to the pixel signals; and the transmission interface is used for serially outputting the static parameters of the at least one image object. The controller is used for controlling operation of the interactive system according to the static parameters of the at least one image object outputted from the transmission interface. The image sensor, the estimation unit, and the transmission interface can all be formed on the same substrate. | 09-02-2010 |
| 20100328244 | DISPLACEMENT DETECTION SYSTEM OF AN OPTICAL TOUCH PANEL AND METHOD THEREOF - At a first time, a first image sensor and a second image sensor capture a first image and a second image including images of an object respectively. At a second time, the first image sensor and the second image sensor capture a third image and a fourth image including images of the object respectively. A coordinate calculation device calculates a first coordinate of the object at the first time according to the first image and the second image, and a second coordinate of the object at the second time according to the third image and the fourth image. A coordinate correction device calculates a displacement between the first time and the second time according to the first coordinate and the second coordinate, and corrects an output coordinate of the object at the second time according to the displacement. | 12-30-2010 |
| 20100328270 | OBJECT DETECTION CALIBRATION SYSTEM OF AN OPTICAL TOUCH SCREEN AND METHOD THEREOF - A first image sensor captures a first image of a panel of a touch screen. The first image includes a first object, a second object, a first set of reference marks, a second set of reference marks, and a first boundary mark. The touch screen establishes relationships of relative positions among the first image sensor, the first object, the second object, and the reference marks according to positions of the first object, the second object, and the reference marks in the first image. And the touch screen calculates a relative position between the first image sensor and the panel according to the relationships of relative positions among the first image sensor, the first object, the second object, and the reference marks and relative positions among the first object, the second object, and the panel. | 12-30-2010 |
| 20110193823 | Optical sensing system - An optical sensing system includes a sensing area, a reflective mirror, a first image-sensing device, a second image-sensing device, and a processing circuit. The sensing area is an area in which a plurality of pointing objects may execute touch operation. The reflective mirror generates a mirror image of the sensing area. The first image-sensing device and the second image-sensing device respectively capture images including all or part of the pointing objects in the sensing area, and all or part of the pointing objects in the reflective mirror. The processing circuit generates candidate coordinates according to the images captured by the first and the second image-sensing devices, and obtains the locations of the pointing objects from the candidate coordinates by means of the symmetric relationship between the point objects and the corresponding mirror images with respect to the reflective mirror. In this way, the optical sensing system can perform multi-touch operation. | 08-11-2011 |
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| 20080246057 | Silicon layer for stopping dislocation propagation - A composite semiconductor structure and method of forming the same are provided. The composite semiconductor structure includes a first silicon-containing compound layer comprising an element selected from the group consisting essentially of germanium and carbon; a silicon layer on the first silicon-containing compound layer, wherein the silicon layer comprises substantially pure silicon; and a second silicon-containing compound layer comprising the element on the silicon layer. The first and the second silicon-containing compound layers have substantially lower silicon concentrations than the silicon layer. The composite semiconductor structure may be formed as source/drain regions of metal-oxide-semiconductor (MOS) devices. | 10-09-2008 |
| 20110042729 | METHOD FOR IMPROVING SELECTIVITY OF EPI PROCESS - The present disclosure provides a method of fabricating a semiconductor device that includes providing a semiconductor substrate, forming a gate structure over the substrate, forming a material layer over the substrate and the gate structure, implanting Ge, C, P, F, or B in the material layer, removing portions of the material layer overlying the substrate at either side of the gate structure, forming recesses in the substrate at either side of the gate structure, and depositing a semiconductor material in the recesses by an expitaxy process. | 02-24-2011 |
| 20110079820 | DEVICE WITH SELF ALIGNED STRESSOR AND METHOD OF MAKING SAME - A method includes providing a substrate comprising a substrate material, a gate dielectric film above the substrate, and a first spacer adjacent the gate dielectric film. The spacer has a first portion in contact with a surface of the substrate and a second portion in contact with a side of the gate dielectric film. A recess is formed in a region of the substrate adjacent to the spacer. The recess is defined by a first sidewall of the substrate material. At least a portion of the first sidewall underlies at least a portion of the spacer. The substrate material beneath the first portion of the spacer is reflowed, so that a top portion of the first sidewall of the substrate material defining the recess is substantially aligned with a boundary between the gate dielectric film and the spacer. The recess is filled with a stressor material. | 04-07-2011 |
| 20110084355 | Isolation Structure For Semiconductor Device - A semiconductor device is provided. The semiconductor device includes a substrate, an isolation feature disposed on the substrate, and an active area disposed adjacent the isolation feature. The isolation feature may be a shallow trench isolation feature. The STI feature has a first width at the top of the feature and a second width at the bottom of the feature. The first width is less than the second width. Methods of fabricating a semiconductor device is also provided. A method includes forming shallow trench isolation features and then growing an epitaxial layer adjacent the STI features to form an active region. | 04-14-2011 |
| 20110108894 | METHOD OF FORMING STRAINED STRUCTURES IN SEMICONDUCTOR DEVICES - The present disclosure provides a method of fabricating that includes providing a semiconductor substrate; forming a gate structure on the substrate; performing an implantation process to form a doped region in the substrate; forming spacers on sidewalls of the gate structure; performing an first etching to form a recess in the substrate, where the first etching removes a portion of the doped region; performing a second etching to expand the recess in the substrate, where the second etching includes an etchant and a catalyst that enhances an etching rate at a remaining portion of the doped region; and filling the recess with a semiconductor material. | 05-12-2011 |
| 20110147846 | METHOD FOR INCORPORATING IMPURITY ELEMENT IN EPI SILICON PROCESS - The present disclosure provides a method of fabricating a semiconductor device that includes forming a plurality of fins, the fins being isolated from each other by an isolation structure, forming a gate structure over a portion of each fin; forming spacers on sidewalls of the gate structure, respectively, etching a remaining portion of each fin thereby forming a recess, epitaxially growing silicon to fill the recess including incorporating an impurity element selected from the group consisting of germanium (Ge), indium (In), and carbon (C), and doping the silicon epi with an n-type dopant. | 06-23-2011 |
| 20110193141 | METHOD OF FABRICATING A FINFET DEVICE - A FinFET device and method for fabricating a FinFET device is disclosed. An exemplary FinFET device includes a substrate of a crystalline semiconductor material having a top surface of a first crystal plane orientation; a fin structure of the crystalline semiconductor material overlying the substrate; a gate structure over a portion of the fin structure; an epitaxy layer over another portion of the fin structure, the epitaxy layer having a surface having a second crystal plane orientation, wherein the epitaxy layer and underlying fin structure include a source and drain region, the source region being separated from the drain region by the gate structure; and a channel defined in the fin structure from the source region to the drain region, and aligned in a direction parallel to both the surface of the epitaxy layer and the top surface of the substrate. | 08-11-2011 |
| 20110210393 | DUAL EPITAXIAL PROCESS FOR A FINFET DEVICE - A method includes forming a first fin and a second fin extending above a semiconductor substrate, with a shallow trench isolation (STI) region between them. A space is defined between the first and second fins above a top surface of the STI region. A first height is defined between the top surface of the STI region and top surfaces of the first and second fins. A flowable dielectric material is deposited into the space. The dielectric material has a top surface above the top surface of the STI region, so as to define a second height between the top surface of the dielectric material and the top surfaces of the first and second fins. The second height is less than the first height. First and second fin extensions are epitaxially formed above the dielectric, on the first and second fins, respectively, after the depositing step. | 09-01-2011 |
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| 20100044748 | ELECTROSTATIC DISCHARGE PROTECTION DEVICE - An ESD protection device includes a p-well with first protrudent portions, an N-well with second protrudent portions, a P-well/N-well boundary, a PMOS transistor disposed in the N-well, an NMOS transistor disposed in the P-well, first P+ diffusion regions in the first protrudent portions, first N+ diffusion regions in the second protrudent portions, second P+ diffusion regions disposed between the PMOS transistor and the second protrudent portions, second N+ diffusion regions disposed between the NMOS transistor and the first protrudent portions, third P+ diffusion regions disposed between the NMOS transistor, the boundary, and two adjacent second P+ diffusion regions, and third N+ diffusion regions disposed between the PMOS transistor, the boundary, and two adjacent second N+ diffusion regions, wherein the first and second protrudent portions are interlacedly arranged at the boundary. | 02-25-2010 |
| 20100163924 | LATERAL SILICON CONTROLLED RECTIFIER STRUCTURE - A lateral silicon controlled rectifier structure includes a P-type substrate; an N-well region in the P-type substrate; a first P | 07-01-2010 |
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| 20100066327 | VOLTAGE CONVERSION APPARATUS - A voltage conversion apparatus includes a DC-to-DC conversion circuit, a sensing circuit, and a compensation circuit. The voltage conversion apparatus is capable of adaptively adjusting the system bandwidth according to the load. The system bandwidth is increased to make the converted voltage responding to the load rapidly when the voltage conversion apparatus is operated at a transient state; and the system bandwidth is decreased to increase the system stability when the voltage conversion circuit is operated at a steady state. | 03-18-2010 |
| 20110115570 | CLOCK GENERATOR - This invention discloses a clock generator capable of automatically adjusting output clock when process, voltage, or temperature variation occurred. The clock generator comprises: a current generator, for generating a first current and a second current according to a bias signal; an oscillator, coupled to the current generator, for generating a clock signal according to the first current; a frequency detector, coupled to the oscillator, for generating a control signal according to the clock signal and a reference signal; and a bias voltage adjuster, coupled to the current generator and the frequency detector, for adjusting the bias signal according to the control signal; wherein, when the signal frequency of the clock signal changes, the bias signal corresponds to the bias voltage adjuster, to adjust the first current and the second current. | 05-19-2011 |
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| 20100026252 | Low Drop-Out Voltage Regulator with Efficient Frequency Compensation - A low drop-out (LDO) voltage regulator with efficient frequency compensation is disclosed. The LDO voltage regulator includes an error amplifier, a transmission element, a voltage divider and a pole control unit. The error amplifier generates a control signal according to a reference voltage and a feedback voltage. The transmission element is coupled to the error amplifier, and adjusts an input voltage to generate an output voltage according to the control signal. The voltage divider is coupled to the transmission element, and performs a voltage division operation on the output voltage to generate the feedback voltage. The pole control unit is coupled to the transmission element, and provides and adjusts an output capacitor of the LDO voltage regulator to fix a frequency of a pole according to variation of an output impedance of the transmission element, so as to maintain loop stability. | 02-04-2010 |
| 20100054378 | CENTER FREQUENCY ADJUSTMENT DEVICE AND RELATED METHOD FOR A COMMUNICATIONS RECEIVER - A center frequency adjustment device for a communications receiver includes an A/D converter coupled to an analog filter in the communications receiver for converting an output signal of the analog filter to a digital signal, a carrier frequency offset estimator coupled to the A/D converter for estimating a carrier frequency offset of the communications receiver according to the digital signal, and a control circuit coupled to the analog filter and the carrier frequency offset estimator for adjusting a center frequency of the analog filter according to the carrier frequency offset. | 03-04-2010 |
| 20110223878 | Signal Strength Detecting Device and Related Method - A signal strength detecting device of a communication system is disclosed. The signal strength detecting device is coupled to a frequency down mixer of the communication system and the frequency down mixer is used for receiving and converting a first signal to a second signal whose frequencies are lower than frequencies of the first signal. The signal strength detecting device comprises a frequency up converter for receiving and converting the second signal to a third signal whose frequencies are higher than the frequencies of the second signal and a detecting unit for detecting strength of the third signal and generating a signal strength indicator to the communication system according to a detecting result corresponding to the strength of the third signal, wherein the signal strength indicator represents the strength of the first signal received by the frequency down mixer. | 09-15-2011 |
