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Lin Cheng
Lin Cheng, Huntsville, AL US
| Patent application number | Description | Published |
|---|---|---|
| 20090221766 | STEREOSELECTIVE REDUCTION OF A MORPHINONE - A synthetic method is provided, wherein the method comprises stereoselectively reducing a ketone of a morphinone to form a reduced morphinone and optionally covalently attaching a water soluble polymer to the reduced morphinone. | 09-03-2009 |
| 20100105715 | POLYMER CONJUGATES OF OPIOID ANTAGONISTS - The invention provides polymer conjugates of opioid antagonists comprising a polymer, such as poly(ethylene glycol), covalently attached to an opioid antagonist. The linkage between the polymer and the opioid antagonist is preferably hydrolytically stable. The invention also includes a method of treating one or more side effects associated with the use of opioid analgesics, such as constipation, nausea, or pruritus, by administering a polymer conjugate of the invention. | 04-29-2010 |
| 20100305147 | CHEMICALLY MODIFIED SMALL MOLECULES - The invention provides small molecule drugs that are chemically modified by covalent attachment of a water-soluble oligomer obtained from a monodisperse or bimodal water-soluble oligomer composition. A conjugate of the invention, when administered by any of a number of administration routes, exhibits a reduced biological membrane crossing rate as compared to the biological membrane crossing rate of the small molecule drug not attached to the water-soluble oligomer. | 12-02-2010 |
| 20110105438 | Oligomer-Foscarnet Conjugates - The invention relates to (among other things) oligomer-foscarnet conjugates and related compounds. A conjugate of the invention, when administered by any of a number of administration routes, exhibits advantages over previously administered un-conjugated foscarnet compounds. | 05-05-2011 |
Lin Cheng, Taipei City TW
| Patent application number | Description | Published |
|---|---|---|
| 20110096403 | Anti-glare optical module and method for manufacturing the same - An anti-glare optical module includes a substrate unit and a thin film unit. The thin film unit is disposed on the top surface of the substrate unit. The thin film unit has a base surface that has a height relative to the top surface of the substrate unit, the thin film unit has a plurality of convex structures, each convex structure has a curvature radius, the curvature radiuses of every two adjacent convex structures are different, a plurality of lower points each formed between every two convex structures and on the base surface, and each convex structure has an upper point. Therefore, the thin film unit has a good scattering effect for reflective light, can maintain the excellent transmittance and can reduce the flicker points by the convex structures, so that using the convex structures can prevent the eyes of the user from being effected by flicker points. | 04-28-2011 |
Lin Cheng, Chapel Hill, NC US
| Patent application number | Description | Published |
|---|---|---|
| 20100320476 | VERTICAL JUNCTION FIELD EFFECT TRANSISTORS AND DIODES HAVING GRADED DOPED REGIONS AND METHODS OF MAKING - Semiconductor devices and methods of making the devices are described. The devices can be junction field-effect transistors (JFETs) or diodes such as junction barrier Schottky (JBS) diodes or PiN diodes. The devices have graded p-type semiconductor layers and/or regions formed by epitaxial growth. The methods do not require ion implantation. The devices can be made from a wide-bandgap semiconductor material such as silicon carbide (SiC) and can be used in high temperature and high power applications. | 12-23-2010 |
| 20100320530 | METHODS OF MAKING VERTICAL JUNCTION FIELD EFFECT TRANSISTORS AND BIPOLAR JUNCTION TRANSISTORS WITHOUT ION IMPLANTATION AND DEVICES MADE THEREWITH - Methods of making semiconductor devices such as vertical junction field effect transistors (VJFETs) or bipolar junction transistors (BJTs) are described. The methods do not require ion implantation. The VJFET device has an epitaxially regrown n-type channel layer and an epitaxially regrown p-type gate layer as well as an epitaxially grown buried gate layer. Devices made by the methods are also described. | 12-23-2010 |
Lin Cheng, Shenzhen CN
| Patent application number | Description | Published |
|---|---|---|
| 20090094162 | COMMUNICATION SYSTEM, COMMUNICATION DEVICE, AND METHOD FOR CAPABILITY CONTROL - A communication system includes a server for capability control, with a capability control file currently used by a corresponding device being provided in the server. The server includes a capability determination unit adapted to determine whether the summarization of the capabilities currently used by all the devices under the control of the server exceeds the capabilities limited by the capability control file; and a prohibition command sending unit adapted to send to the device a capability prohibition command corresponding to the capabilities. The device includes a capability prohibition unit adapted to prohibit the subsequent usage of the capabilities after receiving the prohibition command. A control method and a communication device are also provided. | 04-09-2009 |
Lin Cheng, Starkville, MS US
| Patent application number | Description | Published |
|---|---|---|
| 20080251793 | JUNCTION BARRIER SCHOTTKY RECTIFIERS HAVING EPITAXIALLY GROWN P+-N JUNCTIONS AND METHODS OF MAKING - A junction barrier Schottky (JBS) rectifier device and a method of making the device are described. The device comprises an epitaxially grown first n-type drift layer and p-type regions forming p | 10-16-2008 |