| Patent application number | Description | Published |
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| 20080242062 | FABRICATION OF DIVERSE STRUCTURES ON A COMMON SUBSTRATE THROUGH THE USE OF NON-SELECTIVE AREA GROWTH TECHNIQUES - Diverse semiconductor structures are fabricated on a single substrate or wafer by using a non-selective area growth technique involving deposition of material over the entire substrate. The fabricated structures are obtained by selective removal of portions of the deposited material layers. Single level and multi-level structures are possible. | 10-02-2008 |
| 20100054761 | Monolithic coherent optical detectors - An optical receiver has a monolithically integrated electrical and optical circuit that includes a substrate with a planar surface. Along the planar surface, the monolithically integrated electrical and optical circuit has an optical hybrid, one or more variable optical attenuators, and photodetectors. The optical hybrid is connected to receive light beams, to interfere light of said received light beams with a plurality of relative phases and to output said interfered light via optical outputs thereof. Each of the one or more variable optical attenuators connects between a corresponding one of the optical outputs and a corresponding one of the photodetectors. | 03-04-2010 |
| 20100216275 | PHOTONIC INTEGRATION SCHEME - Provided is an apparatus and method for manufacture thereof. The apparatus includes a passive optical waveguide structure and a photodiode detector structure. The structures are located on a substrate, and the photodiode detector is laterally proximate to the semiconductor passive waveguide structure. The passive optical waveguide structure includes a first lateral portion of a semiconductor optical core layer on the substrate, a semiconductor upper optical cladding layer on the optical core layer, and a first lateral portion of a doped semiconductor layer on the upper optical cladding layer. The photodiode detector structure includes a second lateral portion of the semiconductor optical core layer, a semiconductor optical absorber layer on the optical core layer, and a second lateral portion of the doped semiconductor layer. | 08-26-2010 |
| 20100226400 | FABRICATING ELECTRONIC-PHOTONIC DEVICES HAVING AN ACTIVE LAYER WITH SPHERICAL QUANTUM DOTS - A method for manufacturing an electronic-photonic device. Epitaxially depositing an n-doped III-V composite semiconductor alloy buffer layer on a crystalline surface of a substrate at a first temperature. Forming an active layer on the n-doped III-V epitaxial composite semiconductor alloy buffer layer at a second temperature, the active layer including a plurality of spheroid-shaped quantum dots. Depositing a p-doped III-V composite semiconductor alloy capping layer on the active layer at a third temperature. The second temperature is less than the first temperature and the third temperature. The active layer has a photoluminescence intensity emission peak in the telecommunication C-band. | 09-09-2010 |
| 20110032964 | FABRICATING ELECTRONIC-PHOTONIC DEVICES HAVING AN ACTIVE LAYER WITH SPHERICAL QUANTUM DOTS - A method for manufacturing an electronic-photonic device. Epitaxially depositing an n-doped III-V composite semiconductor alloy buffer layer on a crystalline surface of a substrate at a first temperature. Forming an active layer on the n-doped III-V epitaxial composite semiconductor alloy buffer layer at a second temperature, the active layer including a plurality of spheroid-shaped quantum dots. Depositing a p-doped III-V composite semiconductor alloy capping layer on the active layer at a third temperature. The second temperature is less than the first temperature and the third temperature. The active layer has a photoluminescence intensity emission peak in the telecommunication C-band. | 02-10-2011 |
| Patent application number | Description | Published |
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| 20100251034 | Execution of a plugin according to plugin stability level - Executing a plugin includes obtaining a stability level of the plugin to be executed, determining a plugin execution mode based at least in part on the stability level, and executing the plugin according to the plugin execution mode determined. The plugin execution mode is selected from a plurality of available plugin execution modes. | 09-30-2010 |
| 20100251380 | Method and system for identifying suspected phishing websites - Identifying suspected phishing websites includes: obtaining an address of a website to be identified; determining, according to the address of the website to be identified, that the website to be identified is neither a legal website to be protected nor a phishing website; applying a suspected phishing website rule by matching a regular expression with the address of the website to be identified; and in the event that the matching is successful, determining that the website to be identified is a suspected phishing website. | 09-30-2010 |
| 20110016184 | Downloading a plug-in on an instant messaging client - Downloading a plug-in for an Instant. Messaging (IM) client includes receiving a request for the plug-in from a user of the IM client; detecting a directly accessible peer client that is currently online; sending a plug-in download request to the directly accessible peer client; and in the event that the plug-in is received from the directly accessible peer client, installing the plug-in on the IM client. | 01-20-2011 |
| 20110023092 | Method and system of plug-in privilege control - A plug-in privilege control includes authorizing a plug-in, including assigning a plug-in identification number (PIN) to the plug-in wherein the PIN is used to identify an identification (ID) of the corresponding plug-in; notifying the plug-in about the PIN; storing information about the plug-in and a plug-in accessible service to a mapping of services; receiving a request for a service from the plug-in, wherein the request includes the PIN; retrieving the ID of the plug-in according to the PIN; and determining whether to allow the plug-in to access the service that it requested. | 01-27-2011 |
