Liehr
Birgit Liehr, Berlin DE
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20120123192 | BED SYSTEM AND A PORTABLE COVER DEVICE FOR A BED - A bed system, comprising a bed ( | 05-17-2012 |
Hans-Christian Liehr, Sangerhausen DE
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20140168844 | THERMAL PROTECTION CIRCUIT - A thermal protection circuit has two electrical connection terminals for a device to be protected, and a temperature-dependent switch. The switch is provided with a temperature-dependent switching mechanism, two stationary contacts which are connected to the connection terminals, and a current transfer element, which is arranged on the switching mechanism. The current transfer element is moved by the switching mechanism and comprises two counter contacts, which are electrically connected to one another and in temperature-dependent bearing contact with the two stationary contacts. The thermal protection circuit is provided with a controllable semiconductor valve for AC voltage having two current terminals and a control input. Each of the two current terminals is connected to one of the connection terminals, and the control input is electrically connected to the counter contacts at the current transfer element via the switching mechanism at least when the temperature-dependent switch is closed. | 06-19-2014 |
20150042443 | TEMPERATURE-DEPENDENT SWITCH - A temperature-dependent switch has a temperature-dependent switching mechanism, a housing accommodating the switching mechanism, two first connections between which first connections the switching mechanism makes or interrupts an electrically conductive connection depending on the temperature of said switching mechanism, and a heating resistor that is arranged on an outside of the housing and is connected electrically in series with the two connections. The heating resistor is a sheet-like metal part that is welded to the housing and carries a further connection. | 02-12-2015 |
20150061818 | TEMPERATURE-DEPENDENT SWITCH COMPRISING A SNAP-ACTION DISC CLAMPED IN AT THE RIM - A temperature-dependent switch arranged with a housing has a temperature-dependent switching mechanism comprising a snap-action disc, on which at least one outer contact region and at least one inner contact region are provided. A movable contact part held on the inner contact region interacts with a first contact surface connected to a first external connection on an upper part of the housing. The at least one outer contact region is connected at least in sections permanently to a second contact surface connected to a second external connection on a lower part of the housing. The snap-action disc lifts off the movable contact part from the first contact surface depending on the temperature of the switching mechanism. The snap-action disc has at least one compensation section between the at least one outer contact region and the at least one inner contact region. | 03-05-2015 |
Michael Liehr, Guilderland, NY US
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20130270711 | APPARATUS AND METHOD FOR INTEGRATION OF THROUGH SUBSTRATE VIAS - An apparatus and method are provided for integrating TSVs into devices prior to device contacts processing. The apparatus includes a semiconducting layer; one or more CMOS devices mounted on a top surface of the semiconducting layer; one or more TSVs integrated into the semiconducting layer of the device wafer; at least one metal layer applied over the TSVs; and one or more bond pads mounted onto a top layer of the at least one metal layer, wherein the at least one metal layer is arranged to enable placement of the one or more bond pads at a specified location for bonding to a second device wafer. The method includes obtaining a wafer of semiconducting material, performing front end of line processing on the wafer; providing one or more TSVs in the wafer; performing middle of line processing on the wafer; and performing back end of line processing on the wafer. | 10-17-2013 |
20130273691 | APPARATUS AND METHOD FOR THIN DIE-TO-WAFER BONDING - A method is provided for bonding a die to a base technology wafer and includes: providing a device wafer having a front, back, at least one side, and at least one TSV, wherein the back contains a substrate material; providing a carrier wafer having a front, back, and at least one side; bonding the wafers using an adhesive; removing the substrate material and wet etching, from the device wafer's back side, to expose at least one metallization scheme feature; processing the device wafer's back side to create at least one backside redistribution layer; removing the device wafer from the carrier wafer; dicing the device wafer into individual die; providing a base technology wafer; coating the front of the base technology wafer with a sacrificial adhesive; placing the front of the individual die onto the front of the base technology wafer; and bonding the individual die to the base technology wafer. | 10-17-2013 |
Sebastian Liehr, Wasserburg DE
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20140033826 | MAGNETIC-INDUCTIVE FLOWMETER - A magnetic-inductive flowmeter with a nonconductive measuring tube, a magnetic field generating apparatus, two measuring electrodes conductively coupled to the medium for tapping a measuring-circuit voltage induced in the flowing medium, and with a measuring device for detecting an empty tube. Detection of an empty tube is obtained by the measuring device being an admittance measuring device having a detector, a counter-electrode, an ac signal source and an evaluation unit, the detector having an electrode connected to the ac signal source so that the electrode is exposed to an ac signal in the range of roughly 50 MHz-200 MHz and then an electrical field extends from the electrode into the medium. The electrode of the detector and the counter-electrode planiform shaped and are located essentially opposite one another on the outer surface of the measuring tube above and underneath the longitudinal axis of the measuring tube, respectively. | 02-06-2014 |
Stefan Liehr, Dresden DE
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20130136852 | EDGE DETECTION - A technique comprising: forming a plurality of smaller substrates from one or more larger substrates by a reduction process according to which there is some possible variation size between the smaller substrates within a variation range; and, in advance of said reduction process, providing said one or more larger substrates with one or more detection marks whose size and location are selected such that after the reduction process each smaller substrate includes a portion of at least one of said one or more detection marks, said portion having one or more edges that coincide with at least a part of one or more edges of the smaller substrate whatever actual size the smaller substrate has within said variation range. | 05-30-2013 |