Lichtenwalner
Daniel J. Lichtenwalner, Raleigh, NC US
Patent application number | Description | Published |
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20110147764 | TRANSISTORS WITH A DIELECTRIC CHANNEL DEPLETION LAYER AND RELATED FABRICATION METHODS - A metal-insulator-semiconductor field-effect transistor (MISFET) includes a semiconductor layer with source and drain regions of a first conductivity type spaced apart therein. A channel region of a first conductivity type extends between the source and drain regions. A gate contact is on the channel region. A dielectric channel depletion layer is between the gate contact and the channel region. The dielectric channel depletion layer provides a net charge having the same polarity as the first conductivity type charge carriers, and which may deplete the first conductivity type charge carriers from an adjacent portion of the channel region when no voltage is applied to the gate contact. | 06-23-2011 |
Daniel Jenner Lichtenwalner, Raleigh, NC US
Patent application number | Description | Published |
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20120329216 | WET CHEMISTRY PROCESSES FOR FABRICATING A SEMICONDUCTOR DEVICE WITH INCREASED CHANNEL MOBILITY - Embodiments of a semiconductor device having increased channel mobility and methods of manufacturing thereof are disclosed. In one embodiment, the semiconductor device includes a substrate including a channel region and a gate stack on the substrate over the channel region. The gate stack includes an alkaline earth metal. In one embodiment, the alkaline earth metal is Barium (Ba). In another embodiment, the alkaline earth metal is Strontium (Sr). The alkaline earth metal results in a substantial improvement of the channel mobility of the semiconductor device. | 12-27-2012 |
20150021623 | ENHANCED GATE DIELECTRIC FOR A FIELD EFFECT DEVICE WITH A TRENCHED GATE - The present disclosure relates to a silicon carbide (SiC) field effect device that has a gate assembly formed in a trench. The gate assembly includes a gate dielectric that is an dielectric layer, which is deposited along the inside surface of the trench and a gate dielectric formed over the gate dielectric. The trench extends into the body of the device from a top surface and has a bottom and side walls that extend from the top surface of the body to the bottom of the trench. The thickness of the dielectric layer on the bottom of the trench is approximately equal to or greater than the thickness of the dielectric layer on the side walls of the trench. | 01-22-2015 |
20150041886 | VERTICAL POWER TRANSISTOR DEVICE - A power metal-oxide-semiconductor field-effect transistor (MOSFET) includes a substrate, a drift layer over the substrate, and a spreading layer over the drift layer. The spreading layer includes a pair of junction implants separated by a junction gate field effect (JFET) region. A gate oxide layer is on top of the spreading layer. The gate contact is on top of the gate oxide layer. Each one of the source contacts are on a portion of the spreading layer separate from the gate oxide layer and the gate contact. The drain contact is on the surface of the substrate opposite the drift layer. | 02-12-2015 |
Joseph J. Lichtenwalner, Newton, NC US
Patent application number | Description | Published |
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20130121654 | Miniaturized Optical Fiber Drop Cable - A fiber optic cable includes first and second optical fibers. A fiber section surrounds the fibers and is formed of a first material. First and second strength members are adjacent to the fiber section on opposite sides thereof. A jacket surrounds the first and second strength members and fiber section. The jacket is formed of a second material, stronger than the first material and which does not adhere to the first material. The jacket may be manually torn open to access the fiber section. The fiber section may be manually pinched and stripped cleanly from the fibers. The fiber section acts as a cocoon to protect the fibers when the jacket is opened and cleanly pulls off of the fibers by manual force. | 05-16-2013 |
20140262422 | LOW STATIC DISCHARGE LAN TWISTED PAIR CABLE - A cable includes a jacket surrounding a cable core. The cable core includes four twisted pairs. One or more separators may optionally be disposed amongst the twisted pairs. The cable may optionally include a nonconductive core wrap, and/or the cable may optionally include an outer conductive shielding layer wrap. One of more of the twisted pairs, the core wrap, the shielding layer wrap, the separator or the jacket includes an antistatic additive, in the form of a coating or material ingredient. | 09-18-2014 |