Patent application number | Description | Published |
20110291200 | INTEGRATED CIRCUITS AND MANUFACTURING METHODS THEREOF - An integrated circuit includes a first diffusion area for a first type transistor. The first type transistor includes a first drain region and a first source region. A second diffusion area for a second type transistor is separated from the first diffusion area. The second type transistor includes a second drain region and a second source region. A gate electrode continuously extends across the first diffusion area and the second diffusion area in a routing direction. A first metallic structure is electrically coupled with the first source region. A second metallic structure is electrically coupled with the second drain region. A third metallic structure is disposed over and electrically coupled with the first and second metallic structures. A width of the first metallic structure is substantially equal to or larger than a width of the third metallic structure. | 12-01-2011 |
20120266126 | SYSTEMS AND METHODS OF DESIGNING INTEGRATED CIRCUITS - A method of designing an integrated circuit includes providing a cell library including a first and second cell structures. The cell structures each include a dummy gate electrode disposed on a boundary. An edge gate electrode is disposed adjacent to the dummy gate electrode. An oxide definition (OD) region has an edge disposed between the edge gate electrode and the dummy gate electrode. The method includes determining if the cell structures are to be abutted with each other. If so, the method includes abutting the cell structures. If not so, the method includes increasing areas of portions of the OD regions between the edge gate electrodes and the dummy gate electrodes. | 10-18-2012 |
20120280331 | Adaptive Fin Design for FinFETs - A method of designing a standard cell includes determining a minimum fin pitch of semiconductor fins in the standard cell, wherein the semiconductor fins are portions of FinFETs; and determining a minimum metal pitch of metal lines in a bottom metal layer over the standard cell, wherein the minimum metal pitch is greater than the minimum fin pitch. The standard cell is placed in an integrated circuit and implemented on a semiconductor wafer. | 11-08-2012 |
20120313256 | Non-Hierarchical Metal Layers for Integrated Circuits - An integrated circuit structure includes a semiconductor substrate, and a first metal layer over the semiconductor substrate. The first metal layer has a first minimum pitch. A second metal layer is over the first metal layer. The second metal layer has a second minimum pitch smaller than the first minimum pitch. | 12-13-2012 |
20120331426 | CELL ARCHITECTURE AND METHOD - A method includes selecting a cell stored in a non-transient computer readable storage medium, arranging a plurality of the cells on a model of a semiconductor device, and creating a mask for the semiconductor device based on the model of the semiconductor device. The cell is designed according to a design rule in which a first power-supply-connection via satisfies a criterion from the group consisting of: i) the first power-supply-connection via is spaced apart from a second power-supply-connection via by a distance that is greater than a threshold distance such that the cell can be fabricated by a single-photolithography single-etch process, or ii) the first power-supply-connection via is coupled to first and second substantially parallel conductive lines that extend along directly adjacent tracks. | 12-27-2012 |
20130069236 | EFFICIENT SEMICONDUCTOR DEVICE CELL LAYOUT UTILIZING UNDERLYING LOCAL CONNECTIVE FEATURES - Provided are semiconductor device cells, methods for forming the semiconductor device cells and a layout style for the semiconductor device cells. The device cells may be repetitive cells used throughout an integrated circuit. The layout style utilizes an area at the polysilicon level that is void of polysilicon and which can accommodate conductive leads therein or thereover. The conductive leads are formed of material typically used for contacts or vias and are disposed beneath the first metal interconnect level which couples device cells to one another. The subjacent local conductive leads may form subjacent signal lines allowing for additional power mesh lines to be included within the limited number of metal tracks that can be accommodated within a device cell and in accordance with metal track design spacing rules. | 03-21-2013 |
20130080980 | METHOD FOR CHECKING AND FIXING DOUBLE-PATTERNING LAYOUT - A method including receiving layout data representing the plurality of patterns, the layout data including a plurality of layers and identifying spaces between adjacent patterns in at least one layer of the plurality of layers which violate a G | 03-28-2013 |
20130087932 | INTEGRATED CIRCUITS AND METHODS OF DESIGNING THE SAME - A method of designing an integrated circuit includes deploying an active area in a first standard cell. At least one gate electrode is routed, overlapping the active area in the first standard cell. At least one metallic line structure is routed, overlapping the active area in the first standard cell. The at least one metallic line structure is substantially parallel to the gate electrode. A first power rail is routed substantially orthogonal to the at least one metallic line structure in the first standard cell. The first power rail overlaps the at least one metallic line structure. The first power rail has a flat edge that is adjacent to the at least one metallic line structure. A first connection plug is deployed at a region where the first power rail overlaps the at least one metallic line structure in the first standard cell. | 04-11-2013 |
20140001595 | Layout Architecture for Performance Improvement | 01-02-2014 |
20140073124 | EDGE DEVICES LAYOUT FOR IMPROVED PERFORMANCE - A method includes forming a first plurality of fingers over an active area of a semiconductor substrate. Each of the first plurality of fingers has a respective length that extends in a direction that is parallel to width direction of the active area. The first plurality of fingers form at least one gate of at least one transistor having a source and a drain formed by a portion of the active area. A first dummy polysilicon structure is formed over a portion of the active area between an outer one of the first plurality of fingers and a first edge of the semiconductor substrate. A second dummy polysilicon structure is over the semiconductor substrate between the first dummy polysilicon structure and the first edge of the semiconductor substrate. | 03-13-2014 |
20140077270 | INTEGRATED CIRCUIT - An integrated circuit includes a first standard cell over a substrate, a power rail, and a first connection plug. The first standard cell includes an active area, at least one gate electrode overlapping the active area of the first standard cell, and at least one metallic line structure overlapping the active area of the first standard cell. The at least one metallic line structure is substantially parallel to the gate electrode. The power rail is substantially orthogonal to the at least one metallic line structure of the first standard cell. The power rail overlaps the at least one metallic line structure of the first standard cell, and the power rail has a flat edge extending through the first standard cell. The first connection plug is at a region where the power rail overlaps the at least one metallic line structure of the first standard cell. | 03-20-2014 |
20140109033 | INTEGRATED CIRCUIT LAYOUT - A layout of a portion of an integrated circuit includes first and second cell structures, each including a first or second dummy gate electrode disposed on a first or second boundary of the corresponding first or second cell structure, a first or second edge gate electrode disposed adjacent to the corresponding first or second dummy gate electrode, and a first or second oxide definition (OD) region having a first or second edge. The second boundary faces the first boundary without abutting the first boundary. The first edge of the first OD region is substantially aligned with the closest edge of the first dummy gate electrode or overlaps the first dummy gate electrode. A distance from the first edge gate electrode to the farthest edge of the first dummy gate electrode is greater than the distance from the first edge gate electrode to the first edge of the first OD region. | 04-17-2014 |
20140183647 | INTEGRATED CIRCUIT LAYOUT DESIGN - An integrated circuit layout that includes a first standard cell having a first transistor region and a second transistor region; a second standard cell having a third transistor region and a fourth transistor region. The first and second standard cells adjoin each other at side boundaries thereof and the first transistor region and the third transistor region are formed in a first continuous active region, and the second transistor region and the fourth transistor region are formed in a second continuous region. | 07-03-2014 |
20140195997 | METHOD AND LAYOUT OF AN INTEGRATED CIRCUIT - An integrated circuit layout includes a P-type active region, an N-type active region, a first metal connection, a second metal connection and a plurality of trunks. The plurality of trunks is formed substantially side-by-side, and in parallel with each other. The first metal connection is substantially disposed over the P-type active region, and is electrically connected with drain regions of PMOS transistors in the P-type active region. The second metal connection is substantially disposed over the N-type active region, and is electrically connected with drain regions of NMOS transistors in the N-type active region. The plurality of trunks is electrically connected with and is substantially perpendicular to the first metal connection and the second metal connection. A first trunk of the plurality of trunks has a width wider than a width of other trunks of the plurality of trunks and is arranged to be located between two groups of trunks. | 07-10-2014 |
20140203378 | Adaptive Fin Design for FinFETs - A method of designing a standard cell includes determining a minimum fin pitch of semiconductor fins in the standard cell, wherein the semiconductor fins are portions of FinFETs; and determining a minimum metal pitch of metal lines in a bottom metal layer over the standard cell, wherein the minimum metal pitch is greater than the minimum fin pitch. The standard cell is placed in an integrated circuit and implemented on a semiconductor wafer. | 07-24-2014 |
20140210014 | METHOD AND APPARATUS FOR FORMING AN INTEGRATED CIRCUIT WITH A METALIZED RESISTOR IN A STANDARD CELL CONFIGURATION - An integrated circuit includes a layer of a semiconductor device including a standard cell configuration having a fixed gate electrode pitch between gate electrode lines and a resistor formed of metal between the fixed gate electrode pitch of the standard cell configuration. In one embodiment, the integrated circuit can be charged device model (CDM) electrostatic discharge (ESD) protection circuit for a cross domain standard cell having the resistor formed of metal. A method of manufacturing integrated circuits includes forming a plurality of gate electrode lines separated by a gate electrode pitch to form a core standard cell device, applying at least a first layer of metal within the gate electrode pitch to form a portion of a resistor, and applying at least a second layer of metal to couple to the first layer of metal to form another portion of the resistor. | 07-31-2014 |
20140215421 | SELF-ALIGNED MULTIPLE PATTERNING LAYOUT DESIGN - Among other things, one or more techniques and systems for performing design layout are provided. An initial design layout is associated with an electrical component, such as a standard cell. The initial design layout comprises a first pattern, such as a mandrel pattern, and a second pattern, such as a passive fill pattern. An initial cut pattern is generated for the initial design layout. Responsive to identifying a design rule violation associated with the initial cut pattern, the initial design layout is modified to generate a modified initial design layout. An updated cut pattern, not resulting in the design rule violation, is generated based upon the modified initial design layout. The updated cut pattern is applied to the modified initial design layout to generate a final design layout. The final design layout can be verified as self-aligned multiple patterning (SAMP) compliant. | 07-31-2014 |
20140264894 | SYSTEM AND METHOD FOR ARBITRARY METAL SPACING FOR SELF-ALIGNED DOUBLE PATTERNING - An integrated circuit includes a first conductive structure of a device configured to have a first voltage potential, a second conductive structure of the device configured to have a second voltage potential that is different than the first voltage potential, and a peacekeeper structure disposed between and separating the first conductive structure and the second conductive structure. The peacekeeper structure is separated from at least one of the first conductive structure and the second conductive structure by a fixed spacing distance for conductive lines for a self-aligned double patterning (“SADP”) process from the integrated circuit was formed. | 09-18-2014 |
20140282289 | CELL BOUNDARIES FOR SELF ALIGNED MULTIPLE PATTERNING ABUTMENTS - A system and method of determining a cell layout are disclosed. The method includes receiving a circuit design corresponding to a predetermined circuit design, the circuit design having a first set of cells and abutting adjacent cells in the first set of cells, the abutted cells having a first boundary pattern therebetween. The first boundary pattern is exchanged with a second boundary pattern based on a number or positions of signal wires in the first boundary pattern. A cell layout for use in a patterning process can then be determined, the cell layout including the second boundary pattern. | 09-18-2014 |
20140298284 | STANDARD CELL DESIGN LAYOUT - Among other things, one or more techniques and/or systems for performing design layout are provided. In an example, a design layout corresponds to a layout of a standard cell whose connectivity is described by a netlist. For example, the netlist specifies net types for respective vias of the standard cell. One or more connectivity rings are formed within the design layout to provide connectivity for one or more vias of the design layout. For example, a first connectivity ring is generated, such as from mandrel, to connect one or more ring one vias. A second connectivity ring is generated, such as from passive pattern, to connect one or more ring two vias. One or more cuts are generated within the design layout to isolate vias having different net types. In this way, the design layout is self-aligned double patterning (SADP) compliant. | 10-02-2014 |
20140332971 | METHOD AND LAYOUT OF AN INTEGRATED CIRCUIT - An integrated circuit layout includes a P-type active region and an N-type active region, and a plurality of trunks. The integrated circuit layout further includes a first metal connection connected to the P-type active region; and a second metal connection connected to the N-type active region. Each trunk of the plurality of trunks is electrically connected with the first metal connection and the second metal connection. Each trunk of the plurality of trunks is substantially perpendicular to the first metal connection and the second metal connection. A first trunk of the plurality of trunks has a width wider than a width of other trunks of the plurality of trunks. | 11-13-2014 |
20150021701 | MEMORY CELL ARRAY - A semiconductor memory cell array is disclosed that includes a memory cell unit. The memory cell unit includes an active region, a first transistor, a second transistor, a gate structure, and an interconnect. The first transistor and the second transistor are formed on the active region. The gate structure is formed on the active region and between the first transistor and the second transistor. The interconnect connects the gate structure and at least one of sources of the first transistor and the second transistor to a power line. | 01-22-2015 |
20150035070 | METHOD AND LAYOUT OF AN INTEGRATED CIRCUIT - An integrated circuit layout includes a first active region, a second active region, a first PODE (poly on OD edge), a second PODE, a first transistor and a second transistor. The first transistor, on the first active region, includes a gate electrode, a source region and a drain region. The second transistor, on the second active region, includes a gate electrode, a source region and a drain region. The first active region and the second active region are adjacent and electrically disconnected with each other. The first PODE and the second PODE are on respective adjacent edges of the first active region and the second active region. The source regions of the first and second transistor are adjacent with the first PODE and the second PODE respectively. The first PODE and the second PODE are sandwiched between source regions of the first transistor and the second transistor. | 02-05-2015 |
20150048424 | STANDARD CELL LAYOUT, SEMICONDUCTOR DEVICE HAVING ENGINEERING CHANGE ORDER (ECO) CELLS AND METHOD - A layout of a standard cell is stored on a non-transitory computer-readable medium and includes a first conductive pattern, a second conductive pattern, a plurality of active area patterns and a first central conductive pattern. The plurality of active area patterns is isolated from each other and arranged in a first row and a second row between the first and second conductive patterns. The first row is adjacent the first conductive pattern and includes a first active area pattern and a second active area pattern among the plurality of active area patterns. The second row is adjacent the second conductive pattern and includes a third active area pattern and a fourth active area pattern among the plurality of active area patterns. The first central conductive pattern is arranged between the first and second active area patterns. The first central conductive pattern overlaps the first conductive pattern. | 02-19-2015 |
20150067616 | CELL LAYOUT DESIGN AND METHOD - A method includes comparing one or more cells to a selection guideline and storing the cells that meet the selection guideline in a non-transient computer readable storage medium to create the cell library based on the comparing. The selection guideline identifies a suitable position of a boundary pin within a cell. | 03-05-2015 |