| Patent application number | Description | Published |
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| 20080216950 | ADHESIVE WITH DIFFERENTIAL OPTICAL PROPERTIES AND ITS APPLICATION FOR SUBSTRATE PROCESSING - An adhesive adapted with particular optical properties, and its use to couple a substrate to a substrate holder during substrate processing are disclosed. After processing the substrate, the optical properties of the adhesive may be exploited to locate and/or remove adhesive residue that may be present on the substrate. | 09-11-2008 |
| 20080230911 | Method of forming a silicide layer on a thinned silicon wafer, and related semiconducting structure - A semiconducting structure includes a thinned silicon substrate ( | 09-25-2008 |
| 20080242054 | Dicing and drilling of wafers - Methods and apparatus to dicing and/or drilling of wafers are described. In one embodiment, an electromagnetic radiation beam (e.g., a relatively high intensity, ultra-short laser beam) may be used to dice and/or drill a wafer. Other embodiments are also described. | 10-02-2008 |
| 20090124067 | METHOD TO DECREASE THIN FILM TENSILE STRESSES RESULTING FROM PHYSICAL VAPOR DEPOSITION - A method and apparatus for a backside metallization of a wafer is provided. The wafer comprised of a first substance is bent by creating tension on a backside and creating compression on a front side prior to deposition of a thin film of a second substance. After deposition, the wafer is released and the thin film deposited on the wafer exhibits less tensile stress than if the thin film was deposited on a flat wafer. | 05-14-2009 |
| 20110059596 | SEMICONDUCTOR WAFER COAT LAYERS AND METHODS THEREFOR - Formulations and processes for forming wafer coat layers are disclosed. In one embodiment, an organic surface protectant is incorporated into a wafer coat formulation deposited onto a semiconductor wafer prior to the laser scribe operation. Upon removal of the wafer coat layer, the organic surface protectant remains on the bumps and thereby prevents oxidation of the bumps between die prep and chip and attach. In an alternative embodiment, an ultraviolet light absorber is added to the wafer coat formulation to enhance the wafer coat layer's energy absorption and thereby improve the laser's ability to ablate the wafer coat layer. In an alternative embodiment, a conformal wafer coat layer is deposited on the wafer and die bumps, thereby reducing wafer coat layer thickness variations that can impact the laser scribing ability. | 03-10-2011 |
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| 20080238601 | Inductive devices with granular magnetic materials - An inductive device is provided, comprising a conductor configured in a spiral and a first layer of granular magnetic material having a plurality of magnetic grains embedded in an amorphous ceramic matrix. The amorphous ceramic matrix has a dielectric constant greater than 3. A transformer is also provided, comprising a core and a first inductor. The first inductor includes a first conductor configured in a spiral surrounding a first portion of the core, and a first layer of granular magnetic material. The transformer further comprises a second inductor. The second inductor includes a second conductor configured in a spiral surrounding a second portion of the core, and a second layer of granular magnetic material. The first and second layers of granular magnetic material have a plurality of magnetic grains embedded in an amorphous ceramic matrix. The amorphous ceramic matrix has a dielectric constant greater than 3. | 10-02-2008 |
| 20090010792 | Brittle metal alloy sputtering targets and method of fabricating same - A method of fabricating a sputtering target assembly comprises steps of mixing/blending selected amounts of powders of at least one noble or near-noble Group VIII metal at least one Group IVB, VB, or VIB refractory metal; forming the mixed/blended powder into a green compact having increased density; forming a full density compact from the green compact; cutting a target plate slice from the full density compact; diffusion bonding a backing plate to a surface of the target plate slice to form a target/backing plate assembly; and machining the target/backing plate assembly to a selected final dimension. The disclosed method is particularly useful for fabricating large diameter Ru—Ta alloy targets utilized in semiconductor metallization processing. | 01-08-2009 |
| 20090028744 | Ultra-high purity NiPt alloys and sputtering targets comprising same - A method of making a NiPt alloy having an ultra-high purity of at least about 4N5 and suitable for use as a sputtering target, comprises steps of: heating predetermined amounts of lesser purity Ni and Pt at an elevated temperature in a crucible to form a NiPt alloy melt, the crucible being composed of a material which is inert to the melt at the elevated temperature; and transferring the melt to a mold having a cavity with a surface coated with a release agent which does not contaminate the melt with impurity elements. The resultant NiPt alloy has a very low concentration of impurity elements and is subjected to cross-directional hot rolling for reducing thickness and grain size. | 01-29-2009 |
| 20090115744 | ELECTRONIC FREEBOARD WRITING SYSTEM - A writing system includes a pen with a two-dimensional optical sensor and a three dimensional acceleration sensor positioned to indicate movement of the pen. A calibrator is coupled to receive path coordinate signals from the two-dimensional optical sensor and the three dimensional acceleration sensor. The calibrator and the two-dimensional optical sensor and the three dimensional acceleration sensor are configured to operate in one of two modes, a contactable mode of operation wherein both the two-dimensional optical sensor and the three dimensional acceleration sensor supply path coordinate signals to the coordinator and a contactless mode of operation wherein only the three dimensional acceleration sensor supplies path coordinate signals to the coordinator. | 05-07-2009 |
| 20090258238 | SILICIDE FORMATION UTILIZING NI-DOPED COBALT DEPOSITION SOURCE - A method of forming a layer of an electrically conductive metal-silicide material, comprises steps of: providing a Si-containing workpiece; forming a Ni-doped Co layer on a surface of the workpiece, as by sputter deposition utilizing a Ni-doped Co sputtering target; and reacting the Ni-doped Co layer and workpiece. Embodiments include performing a salicide process to form electrically conductive Ni-doped Co silicide functioning as electrically conductive contacts to the gate electrode and source and drain regions of a MOS transistor. Also disclosed are PVD sources, e.g., sputtering targets, comprising Ni-doped Co and utilized for forming the Ni-doped Co layer. | 10-15-2009 |
| 20090315861 | INTERACTIVE WHITEBOARD SYSTEM - An interactive whiteboard system includes a combination electrical writable and dry erase marker, an interactive whiteboard to receive writing on the interactive whiteboard with the combination electrical writable and dry erase marker, and a computer operatively coupled to the interactive whiteboard to capture writing on the interactive whiteboard with the combination electrical writable and dry erase marker. | 12-24-2009 |
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| 20090065535 | FLUID DISPENSER SYSTEM - Disclosed is fluid dispenser valve for managing a streamlined flow of fluid. The fluid dispenser valve includes a valve chamber and a fluid inlet. The valve chamber is capable of circulating the fluid. Further, the fluid inlet is configured tangentially to the valve chamber. The fluid inlet is capable of enabling the flow of the fluid into the valve chamber. | 03-12-2009 |
| 20090325032 | TRANSPIRATION COOLING AND FUEL CELL FOR ULTRA MOBILE APPLICATIONS - In some embodiments, transpiration cooling and fuel cell for ultra mobile applications is presented. In this regard, an apparatus is introduced having an integrated circuit device, a fuel cell to power the integrated circuit device, wherein the fuel cell produces water as a byproduct, a chassis to house the integrated circuit device and the fuel cell, and a skin to cover the chassis, the skin comprising a waterproof layer configured to prevent water from contacting the integrated circuit device and a water absorbent layer of hydro gel configured to absorb water. Other embodiments are also disclosed and claimed. | 12-31-2009 |
| 20100079955 | Microfins for cooling an ultramobile device - The present invention discloses a method of cooling an ultramobile device with microfins attached to an external wall of an enclosure surrounding the ultramobile device. | 04-01-2010 |
| 20110277980 | MICROFINS FOR COOLING AN ULTRAMOBILE DEVICE - The present invention discloses a method of cooling an ultramobile device with microfins attached to an external wall of an enclosure surrounding the ultramobile device. | 11-17-2011 |
