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Levina

Agnija Levina, Riga LV

Patent application numberDescriptionPublished
20110263864REGENERATION OF 2,2'-CYCLOPROPYLIDENE-BIS (OXAZOLINES) - The present invention provides a method for regeneration of chiral 2,2′-cyclopropylidene-bis(oxazolines), such as (3&R, 3′aR,8aS,8′aS)-2,2′-cyclopropylidenebis-[3a,8a]-dihydro-8H-indeno-[1,2-d]-oxazole and (45,4′5,5R,5′R)-2,2′-cyclopropy-lidenebis-4,5-diphenyldihydro-4,5-oxazole, used as a part of complex catalysts for e.g. stereoselective addition reactions, from the reaction mixtures, by selective sorption of 2,2′-cyclopropylidene-bis(oxazolines) on a sorbent, such as silica gel, isolation of the sorbent from reaction mixture, desorption of 2,2′-cyclopropylidene-bis(oxazolines) from the sorbent with suitable organic solvent and final recovery of 2,2′-cyclopropylidene-bis(oxazolines) from the organic solvent used for desorption process. Catalytic quality of recovered compounds does not differ from those in freshly prepared catalysts.10-27-2011

Iryna Levina, Blaine, MN US

Patent application numberDescriptionPublished
20110077709MEDICAL DEVICE HAVING RESISTANCE WELDED CONNECTIONS - A medical device is electrically connected to a biological tissue for transmission of an electrical signal between the medical device and the biological tissue. The medical device includes a housing assembly and a control circuit assembly that controls the electrical signal. The control circuit assembly is enclosed within the housing assembly, and the control circuit assembly includes an electrically conductive terminal. The device further includes an electrical component at least partially enclosed within the housing assembly. The electrical component has a connecting member that electrically connects the electrical component to the control circuit assembly. The connecting member is resistance welded and bonded directly to the electrically conductive terminal of the control circuit assembly.03-31-2011

Iryna Levina, Minneapolis, MN US

Patent application numberDescriptionPublished
20080308057Electrode for an Ignition Device - An electrode for an ignition device is made from a dilute nickel alloy which has improved resistance to high temperature oxidation, sulfidation, corrosive wear, deformation and fracture and includes at least 90% by weight of nickel; zirconium; boron and at least one element from the group consisting of aluminum, magnesium, silicon, chromium, titanium and manganese. The weight ratio of Zr/B may range from about 0.5 to 150, and may include amounts of, by weight of the alloy, 0.05-0.5% zirconium and 0.001-0.01% boron. The oxidation resistance of the alloy may also be improved by the addition of hafnium to the alloy in an amount that is comparable to the amount of zirconium, which may include an amount of, by weight of the alloy, 0.005-0.2% hafnium. Electrodes of dilute nickel alloys which include aluminum and silicon, as well as those which include chromium, silicon, manganese and titanium, are particularly useful as spark plug electrodes. These electrode alloys of the may also include at least one of cobalt, niobium, vanadium, molybdenum, tungsten, copper, iron, carbon, calcium, phosphorus or sulfur as trace elements, generally with specified maximum amounts. The ignition device may be a spark plug which includes a ceramic insulator, a conductive shell, center electrode and ground electrode. The center electrode, ground electrode, or both, may be made from the dilute nickel alloy of the invention. These electrodes may also include a core with thermal conductivity greater than that of the dilute nickel alloy, such as copper or silver or their alloys.12-18-2008
20090107440Electrode For An Ignition Device - An electrode for an ignition device is made from a dilute nickel alloy which has improved resistance to high temperature oxidation, sulfidation, corrosive wear, deformation and fracture and includes at least 90% by weight of nickel; zirconium; boron and at least one element from the group consisting of aluminum, magnesium, silicon, chromium, titanium and manganese. The weight ratio of Zr/B may range from about 0.5 to 150, and may include amounts of, by weight of the alloy, 0.05-0.5% zirconium and 0.001-0.01% boron. The oxidation resistance of the alloy may also be improved by the addition of hafnium to the alloy in an amount that is comparable to the amount of zirconium, which may include an amount of, by weight of the alloy, 0.005-0.2% hafnium. Electrodes of dilute nickel alloys which include aluminum and silicon, as well as those which include chromium, silicon, manganese and titanium, are particularly useful as spark plug electrodes. These electrode alloys of the may also include at least one of cobalt, niobium, vanadium, molybdenum, tungsten, copper, iron, carbon, calcium, phosphorus or sulfur as trace elements, generally with specified maximum amounts. The ignition device may be a spark plug which includes a ceramic insulator, a conductive shell, center electrode and ground electrode. The center electrode, ground electrode, or both, may be made from the dilute nickel alloy of the invention. These electrodes may also include a core with thermal conductivity greater than that of the dilute nickel alloy, such as copper or silver or their alloys.04-30-2009
20100175654Electrode for an Ignition Device - An electrode for an ignition device is made from a dilute nickel alloy which has improved resistance to high temperature oxidation, sulfidation, corrosive wear, deformation and fracture and includes at least 90% by weight of nickel; zirconium; boron and at least one element from the group consisting of aluminum, magnesium, silicon, chromium, titanium and manganese. The weight ratio of Zr/B may range from about 0.5 to 150, and may include amounts of, by weight of the alloy, 0.05-0.5% zirconium and 0.001-0.01% boron. The oxidation resistance of the alloy may also be improved by the addition of hafnium to the alloy in an amount that is comparable to the amount of zirconium, which may include an amount of, by weight of the alloy, 0.005-0.2% hafnium. Electrodes of dilute nickel alloys which include aluminum and silicon, as well as those which include chromium, silicon, manganese and titanium, are particularly useful as spark plug electrodes. These electrode alloys of the may also include at least one of cobalt, niobium, vanadium, molybdenum, tungsten, copper, iron, carbon, calcium, phosphorus or sulfur as trace elements, generally with specified maximum amounts. The ignition device may be a spark plug which includes a ceramic insulator, a conductive shell, center electrode and ground electrode. The center electrode, ground electrode, or both, may be made from the dilute nickel alloy of the invention. These electrodes may also include a core with thermal conductivity greater than that of the dilute nickel alloy, such as copper or silver or their alloys.07-15-2010

Patent applications by Iryna Levina, Minneapolis, MN US

Larissa Levina, Toronto CA

Patent application numberDescriptionPublished
20090305452Methods of Making Quantum Dot Films - Optical and optoelectronic devices and methods of making same. Under one aspect, an optical device includes an integrated circuit an array of conductive regions; and an optically sensitive material over at least a portion of the integrated circuit and in electrical communication with at least one conductive region of the array of conductive regions. Under another aspect, a method of forming a nanocrystalline film includes fabricating a plurality of nanocrystals having a plurality of first ligands attached to their outer surfaces; exchanging the first ligands for second ligands of different chemical composition than the first ligands; forming a film of the ligand-exchanged nanocrystals; removing the second ligands; and fusing the cores of adjacent nanocrystals in the film to form an electrical network of fused nanocrystals. Under another aspect, a film includes a network of fused nanocrystals, the nanocrystals having a core and an outer surface, wherein the core of at least a portion of the fused nanocrystals is in direct physical contact and electrical communication with the core of at least one adjacent fused nanocrystal, and wherein the film has substantially no defect states in the regions where the cores of the nanocrystals are fused.12-10-2009
20100044676Photodetectors and Photovoltaics Based on Semiconductor Nanocrystals - A composite material is described. The composite material comprises semiconductor nanocrystals, and organic molecules that passivate the surfaces of the semiconductor nanocrystals. One or more properties of the organic molecules facilitate the transfer of charge between the semiconductor nanocrystals. A semiconductor material is described that comprises p-type semiconductor material including semiconductor nanocrystals. At least one property of the semiconductor material results in a mobility of electrons in the semiconductor material being greater than or equal to a mobility of holes. A semiconductor material is described that comprises n-type semiconductor material including semiconductor nanocrystals. At least one property of the semiconductor material results in a mobility of holes in the semiconductor material being greater than or equal to a mobility of electrons.02-25-2010
20100133418QUANTUM DOT OPTICAL DEVICES WITH ENHANCED GAIN AND SENSITIVITY AND METHODS OF MAKING SAME - Optical and optoelectronic devices and methods of making same. Under one aspect, an optical device includes an integrated circuit an array of conductive regions; and an optically sensitive material over at least a portion of the integrated circuit and in electrical communication with at least one conductive region of the array of conductive regions. Under another aspect, a method of forming a nanocrystalline film includes fabricating a plurality of nanocrystals having a plurality of first ligands attached to their outer surfaces; exchanging the first ligands for second ligands of different chemical composition than the first ligands; forming a film of the ligand-exchanged nanocrystals; removing the second ligands; and fusing the cores of adjacent nanocrystals in the film to form an electrical network of fused nanocrystals. Under another aspect, a film includes a network of fused nanocrystals, the nanocrystals having a core and an outer surface, wherein the core of at least a portion of the fused nanocrystals is in direct physical contact and electrical communication with the core of at least one adjacent fused nanocrystal, and wherein the film has substantially no defect states in the regions where the cores of the nanocrystals are fused.06-03-2010
20100314529QUANTUM DOT OPTICAL DEVICES WITH ENHANCED GAIN AND SENSITIVITY AND METHODS OF MAKING SAME - Optical and optoelectronic devices and methods of making same. Under one aspect, an optical device includes an integrated circuit an array of conductive regions; and an optically sensitive material over at least a portion of the integrated circuit and in electrical communication with at least one conductive region of the array of conductive regions. Under another aspect, a method of forming a nanocrystalline film includes fabricating a plurality of nanocrystals having a plurality of first ligands attached to their outer surfaces; exchanging the first ligands for second ligands of different chemical composition than the first ligands; forming a film of the ligand-exchanged nanocrystals; removing the second ligands; and fusing the cores of adjacent nanocrystals in the film to form an electrical network of fused nanocrystals. Under another aspect, a film includes a network of fused nanocrystals, the nanocrystals having a core and an outer surface, wherein the core of at least a portion of the fused nanocrystals is in direct physical contact and electrical communication with the core of at least one adjacent fused nanocrystal, and wherein the film has substantially no defect states in the regions where the cores of the nanocrystals are fused.12-16-2010

Patent applications by Larissa Levina, Toronto CA

Larissa Levina US

Patent application numberDescriptionPublished
20100314603ELECTRONIC AND OPTOELECTRONIC DEVICES WITH QUANTUM DOT FILMS - Optical and optoelectronic devices and methods of making same. Under one aspect, an optical device includes an integrated circuit an array of conductive regions; and an optically sensitive material over at least a portion of the integrated circuit and in electrical communication with at least one conductive region of the array of conductive regions. Under another aspect, a method of forming a nanocrystalline film includes fabricating a plurality of nanocrystals having a plurality of first ligands attached to their outer surfaces; exchanging the first ligands for second ligands of different chemical composition than the first ligands; forming a film of the ligand-exchanged nanocrystals; removing the second ligands; and fusing the cores of adjacent nanocrystals in the film to form an electrical network of fused nanocrystals. Under another aspect, a film includes a network of fused nanocrystals, the nanocrystals having a core and an outer surface, wherein the core of at least a portion of the fused nanocrystals is in direct physical contact and electrical communication with the core of at least one adjacent fused nanocrystal, and wherein the film has substantially no defect states in the regions where the cores of the nanocrystals are fused.12-16-2010
20100317175METHODS OF MAKING QUANTUM DOT FILMS - Optical and optoelectronic devices and methods of making same. Under one aspect, an optical device includes an integrated circuit an array of conductive regions; and an optically sensitive material over at least a portion of the integrated circuit and in electrical communication with at least one conductive region of the array of conductive regions. Under another aspect, a method of forming a nanocrystalline film includes fabricating a plurality of nanocrystals having a plurality of first ligands attached to their outer surfaces; exchanging the first ligands for second ligands of different chemical composition than the first ligands; forming a film of the ligand-exchanged nanocrystals; removing the second ligands; and fusing the cores of adjacent nanocrystals in the film to form an electrical network of fused nanocrystals. Under another aspect, a film includes a network of fused nanocrystals, the nanocrystals having a core and an outer surface, wherein the core of at least a portion of the fused nanocrystals is in direct physical contact and electrical communication with the core of at least one adjacent fused nanocrystal, and wherein the film has substantially no defect states in the regions where the cores of the nanocrystals are fused.12-16-2010