Patent application number | Description | Published |
20080297672 | OPTICALLY COMPENSATED BEND MODE LIQUID CRYSTAL DISPLAY DEVICES AND FABRICATION METHODS THEREOF - The invention relates to optically compensated bend (OCB) mode liquid crystal display devices and fabrication methods thereof. The OCB mode liquid crystal display includes a first substrate, a second substrate and a liquid crystal layer interposed therebetween. A first pixel electrode is disposed on the first substrate. A second pixel electrode is disposed overlying the first pixel electrode with a dielectric layer interposed therebetween such that a discontinuous fringe field is formed at the edge of the second pixel electrode. A first alignment layer is disposed on the first substrate covering the first and second pixel electrode. A common electrode is disposed on the second substrate, and a second alignment layer is disposed on the second substrate covering the common electrode. | 12-04-2008 |
20090033821 | OPTICALLY COMPENSATED BEND MODE LIQUID CRYSTAL DISPLAY DEVICES - An OCB mode liquid crystal display device is provided. The OCB mode liquid crystal display device comprises a first substrate, a second substrate and a liquid crystal layer interposed therebetween. The first substrate and the second substrate are disposed oppositely to each other. The device further comprises a first pixel electrode disposed on the first substrate, a second pixel electrode disposed on the first substrate and spaced apart from the first pixel electrode by a distance. The first pixel electrode and second pixel electrode are alternately arranged. The device further comprises a first alignment layer disposed on the first substrate to cover the first pixel electrode and the second pixel electrode, a common electrode disposed on the second substrate, and a second alignment layer disposed on the second substrate covering the common electrode. | 02-05-2009 |
20090207358 | HORIZONTAL-SWITCHING FLEXIBLE LIQUID CRYSTAL DISPLAYS AND FABRICATION METHODS THEREOF - Horizontal-switching flexible liquid crystal displays (LCD) and fabrication methods thereof are provided. The horizontal-switching flexible liquid crystal display includes a flexible first substrate, a second substrate and a liquid crystal (LC) layer interposed therebetween. The LC layer consists of liquid crystal molecules affected by a horizontal field and divided into an upper portion and a lower portion. At least one pair of a patterned pixel electrode and a common electrode is disposed on the first substrate. The pixel electrode and the common electrode are formed on the same plane, thereby generating a horizontal field during operation. First and second alignment layers allow the LC molecules of the LC layer to be in a substantially vertical alignment. The phase retardation of the horizontal-switching LCD is due to the lower portion of the LC layer. | 08-20-2009 |
20100128341 | COLOR ELECTROWETTING DISPLAY (EWD) DEVICES - Electrowetting display devices are presented. The electrowetting display includes a first substrate and an opposing second substrate with a polar fluid layer and a color non-polar fluid layer interposed therebetween. A first transparent electrode is disposed on the first substrate. A second electrode is disposed on the second substrate. A hydrophilic partition structure is disposed on the second substrate, thereby defining a plurality of sub-pixels. The color electrowetting display further includes an array of color pixel regions. Each pixel region consists of a set of primary color sub-pixel. Each color sub-pixel corresponds to one of different color non-polar fluid layers, and each of the different color non-polar fluid layers is isolated from each other. The colors of non-polar fluid layer in the neighboring sub-pixels are different. | 05-27-2010 |
20100289987 | FLEXIBLE LIQUID CRYSTAL DISPLAY DEVICE - A flexible LCD device is provided, including a flexible substrate having a first side and a second side, wherein the first side is perpendicular to the second side. A first electrode is disposed over the flexible substrate, extending along a first direction, wherein the first direction is not perpendicular to the first side and the second side of the flexible substrate. A first liquid crystal layer is disposed over the first electrode. A colored layer is disposed over the first liquid crystal layer. A second electrode is disposed over the colored layer, extending along a second direction, wherein the second direction is different from the first direction and is not perpendicular to the first side and the second side of the flexible substrate and the second direction is interlaced with the first direction. | 11-18-2010 |
20150285960 | DISPLAY STRUCTURE - A display structure is provided. The display structure includes a first substrate, a pixel array, a second substrate and an optical component. The pixel array is disposed on the first substrate. Each of pixels of the pixel array includes a light-transparent region and a non-light-transparent region. The second substrate is disposed on the pixel array. The optical component has a microlens structure. After the light passes through the microlens structure, the light passes directly through the plurality of the light-transparent regions without passing through the edge of the plurality of the non-light-transparent regions. | 10-08-2015 |
Patent application number | Description | Published |
20090025964 | CIRCUIT SUBSTRATE AND METHOD FOR FABRICATING INDUCTIVE CIRCUIT - A circuit substrate including a laminated layer, an embedded electronic device, at least a circuit structure, and a solder mask layer is provided. The embedded electronic device is disposed within the laminated layer. The circuit structure is disposed on a surface of the laminated layer and is connected between a reference plane and the embedded electronic device. In addition, the solder mask layer is disposed on the surface of the laminated layer and exposes a portion of the circuit structure. The circuit structure has a specific layout by which a circuit trace with an adjustable length can be formed by disconnecting or connecting the exposed portion of the circuit structure. | 01-29-2009 |
20090278626 | BAND PASS FILTER - A band pass filter is suitable to be formed in a multi-layered circuit substrate of a wireless communication module. The band pass filter includes an input port, a first inductor, a first capacitor, a first parasitic capacitor, a second capacitor, a second inductor, a second parasitic capacitor, a third inductor, a third parasitic capacitor and a output. The input port, first inductor, first capacitor, second capacitor, third inductor and output port are sequentially electrically connected in series. The first parasitic capacitor is induced between the first inductor, first capacitor and a ground. The second inductor is electrically connected to the first capacitor, second capacitor and ground. The second parasitic capacitor is induced between the second inductor, first capacitor, second capacitor and ground. The second parasitic capacitor is electrically connected in parallel with the second inductor. The third parasitic capacitor is induced between the third inductor, second capacitor and ground. | 11-12-2009 |
20100001827 | TRANSFORMER - A transformer, adapted for being configured in a wiring substrate, is provided. The transformer includes a first plane coil and a second plane coil. The first plane coil includes a plurality of first loops. The second plane coil includes a plurality of second loops. A first bundle constituted by at least two adjacent first loops and a second bundle constituted by at least two adjacent second loops are stridden one over another. | 01-07-2010 |
20100007438 | BAND PASS FILTER - A band pass filter includes an original circuit. An interaction of at least two of components of the original circuit produces at least a mutual capacitor or at least a mutual inductor, which constitutes a resonance circuit with the original circuit to produce at least a transmission zero for increasing the attenuation rate of the stop band. | 01-14-2010 |
20100007439 | TRANSFORMER - A transformer is provided with four capacitors and four inductors. The first capacitor is electrically connected between a first port and ground in series. The first inductor is electrically connected to the first port in series. The second capacitor is electrically connected between the first inductor and ground in series. The second inductor is electrically connected between the first inductor and the second capacitor in series. The third capacitor is electrically connected between a second port and ground in series. The third inductor is electrically connected to the second port in series. The fourth capacitor is electrically connected between a third port and ground in series. The fourth inductor is electrically connected between the third inductor and the third port in series. | 01-14-2010 |
Patent application number | Description | Published |
20120292721 | SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME - A method of fabricating a semiconductor device includes following steps. A substrate is provided, wherein a first dielectric layer having a trench therein is formed on the substrate, a source/drain region is formed in the substrate at two sides of the trench, and a second dielectric layer is formed on the substrate in the trench. A first physical vapor deposition process is performed to form a Ti-containing metal layer in the trench. A second physical vapor deposition process is performed to form an Al layer on the Ti-containing metal layer in the trench. A thermal process is performed to anneal the Ti-containing metal layer and the Al layer so as to form a work function metal layer. A metal layer is formed to fill the trench. | 11-22-2012 |
20120322218 | METHOD FOR FABRICATING SEMICONDUCTOR DEVICE - A method for fabricating a semiconductor device includes the following steps. Firstly, a dummy gate structure having a dummy gate electrode layer is provided. Then, the dummy gate electrode layer is removed to form an opening in the dummy gate structure, thereby exposing an underlying layer beneath the dummy gate electrode layer. Then, an ammonium hydroxide treatment process is performed to treat the dummy gate structure. Afterwards, a metal material is filled into the opening. | 12-20-2012 |
20130020657 | METAL OXIDE SEMICONDUCTOR TRANSISTOR AND METHOD OF MANUFACTURING THE SAME - A method for manufacturing a MOS transistor is provided. A substrate has a high-k dielectric layer and a barrier in each of a first opening and a second opening formed by removing a dummy gate and located in a first transistor region and a second transistor region. A dielectric barrier layer is formed on the substrate and filled into the first opening and the second opening to cover the barrier layers. A portion of the dielectric barrier in the first transistor region is removed. A first work function metal layer is formed. The first work function metal layer and a portion of the dielectric barrier layer in the second transistor region are removed. A second work function metal layer is formed. The method can avoid a loss of the high-k dielectric layer to maintain the reliability of a gate structure, thereby improving the performance of the MOS transistor. | 01-24-2013 |
20140035070 | METAL OXIDE SEMICONDUCTOR TRANSISTOR - A MOS transistor including a silicon substrate, a first gate structure and a second gate structure disposed on the silicon substrate is provided. The first gate structure and the second gate structure each includes a high-k dielectric layer disposed on the silicon substrate, a barrier layer disposed on the high-k dielectric layer, and a work function layer disposed on and contacted with the barrier layer. The MOS transistor further includes a dielectric material spacer. The dielectric material spacer is disposed on the barrier layer of each of the first gate structure and the second gate structure and surrounding the work function layer of each of the first gate structure and the second gate structure. | 02-06-2014 |
20140361386 | SEMICONDUCTOR DEVICE - Provided is a semiconductor device including a substrate, a gate structure, a second dielectric layer and a source/drain region. A first dielectric layer is disposed on the substrate, and the first dielectric layer has a trench therein. The gate structure is disposed on the substrate in the trench and includes a work function metal layer and a metal layer. The work function metal layer is disposed in the trench, and includes a TiAl | 12-11-2014 |