Le, San Jose
Andrew Le, San Jose, CA US
Patent application number | Description | Published |
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20090125140 | SYSTEM AND METHOD FOR MATCHING SILICON OXIDE THICKNESS BETWEEN SIMILAR PROCESS TOOLS - The present invention is one or more implementations is a method of fabricating a semiconductor for improved oxide thickness control, defining a process tool, determining and evaluating performance variables, determining a performance impact factor and thereafter modifying control of the process tool in the fabrication process to operate in direct relation to the determined results of the present invention. The present invention sets forth definitive advantages in reducing engineering time, improving process controls and improving cycle-times. | 05-14-2009 |
20100007363 | SYSTEM AND METHOD FOR DETERMINING IN-LINE INTERFACIAL OXIDE CONTACT RESISTANCE - The present invention relates generally to semiconductor wafer fabrication and more particularly but not exclusively to advanced process control methodologies for measuring in-line contact resistance in relation to oxide formations. The present invention, in one or more implementations, include an in-line method of determining contact resistance across a semiconductor wafer and determining the contact resistance value and the number of monolayers of the wafer. | 01-14-2010 |
Annie Mylang Le, San Jose, CA US
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20140237164 | HYBRID DRIVE THAT IMPLEMENTS A DEFERRED TRIM LIST - A hybrid drive controller maintains a deferred trim list that holds a subset of logical addresses of writes performed on magnetic disks. For example, if a write command is issued to an LBA space that overlaps a portion stored in flash memory and the write is to be performed on the magnetic disks, the trimming of the overlapping portion in the flash memory will be deferred. Instead of trimming, the logical addresses associated with the overlapping portion will be added to the deferred trim list and trimming of the logical addresses in the deferred trim list will be carried out at a later time, asynchronous to the write that caused them to be added to the list. | 08-21-2014 |
20140250272 | SYSTEM AND METHOD FOR FETCHING DATA DURING READS IN A DATA STORAGE DEVICE - A controller for a data storage device that includes a cache memory and a non-volatile solid state memory is configured to fetch data from the non-volatile solid state memory in response to a read command, conditionally fetch additional data from the non-volatile solid state memory in response to the read command, and then store some or all of the fetched data in the cache memory. The condition for additional data fetch is met when it is determined that a sequence of N (where N is two or more) most recent read commands is requesting data from a successively increasing and consecutive address range. The additional data fetch speeds up subsequent reads, especially when the requested data sizes are relatively small. When the requested data sizes are larger, improvements in read speeds can be achieved if the time between the large reads are well spaced. | 09-04-2014 |
20140258745 | POWER STATE CHANGE IN DISK DRIVE BASED ON DISK ACCESS HISTORY - A data storage device that includes a magnetic storage device selects one or more power states of the magnetic storage device based on a time interval since a most recent time data has been read from or written to the magnetic storage device. The power state of the magnetic storage device can be changed from a higher power consumption state to a lower power consumption state when the time interval exceeds a predetermined value. The power consumption state may be changed from an active servo state to an intermediate power consumption state, a park state, and/or a standby state, depending on the time elapsed since the most recent time data has been read from or written to the magnetic storage device. | 09-11-2014 |
20140259153 | SECURE DATA ACCESS IN HYBRID DISK DRIVE - Data are accessed securely in a data storage device that includes a non-volatile solid-state storage device integrated with a magnetic storage device. An identical copy of drive security data, such as an encrypted version of a drive access password, is stored in both the non-volatile solid-state storage device and in the magnetic storage device. In response to receiving a command from a host device that results in access to the magnetic storage device, access is granted to the magnetic storage device if the copy of drive security data stored in the non-volatile solid-state storage device matches the copy of drive security data stored in the magnetic storage device. Furthermore, encrypted drive-unique identification data associated with the drive may be stored in both the non-volatile solid-state storage device and the magnetic storage device, and access is granted if both copies of the encrypted drive-unique identification data match. | 09-11-2014 |
20150055243 | TIMING OF POWER STATE CHANGE IN A DISK DRIVE BASED ON DISK ACCESS HISTORY - A data storage device that includes a magnetic storage device and a non-magnetic nonvolatile storage device that measures a hit rate of read/write commands that result in accesses to the non-magnetic nonvolatile storage device, and adjusts a length of a time period, such as an idle time, based on the hit rate. The duration of the time period can be set each time the magnetic storage device is accessed. Upon expiration of the time period, if the magnetic storage device has not yet been accessed, the magnetic storage device is changed from a higher power consumption state to a lower power consumption state. | 02-26-2015 |
Anthony Le, San Jose, CA US
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20090138626 | SPI BANK ADDRESSING SCHEME FOR MEMORY DENSITIES ABOVE 128Mb - Systems and methods of addressing two or more banks of memory utilizing a single-bank serial peripheral interface and an at least three-byte address protocol are provided. In one embodiment, a serial peripheral interface comprises a serial processing component configured to address one of the memory banks using the three-byte addressing scheme, and to write data to or read data from the addressed bank, and a bank register pointer component coupled to the serial processing component, the pointer component comprising two or more bank register pointers associated with respective memory banks, and configured to select one of the memory banks based on the two or more bank register pointers, wherein the bank register pointer component selects one of the two or more memory banks, and the serial processing component writes data to or reads data from the selected bank of memory according to the three-byte addressing scheme. | 05-28-2009 |
20090138694 | SPI AUTO-BOOT MODE - Systems and methods of detecting an auto-boot mode and booting data from a serial peripheral interface to a processor without the need of a read instruction utilizing a serial peripheral interface having an auto-boot mode detector are provided. In one embodiment, a serial peripheral interface comprises a serial processing component configured to serially communicate data between the processor and at least two peripherals, and an auto-boot component operably coupled to the serial processing component, comprising an auto-boot mode detector configured to determine whether a boot mode exists based on detecting whether serial input data is received during a predetermined wait state, and configured to selectively boot data to a start address associated with the processor based on the boot mode determination. | 05-28-2009 |
20110085983 | Liquid Chromatography-Mass Spectrometry Methods For Multiplexed Detection and Quantitation of Free Amino Acids - The present invention provides liquid chromatography-mass spectrometry methods and kits for the specific, sensitive and rapid detection as well as quantitation of free amino acids in samples following High Pressure Liquid Chromatography (HPLC) separation. | 04-14-2011 |
20110179215 | PROGRAMMABLE READ PREAMBLE - The subject systems and/or methods relate to a high speed memory device that enables a preamble pattern to be updated after manufacture. A high speed memory device can include a FLASH module and a RAM module. The FLASH module can include an initial preamble pattern, wherein the initial preamble pattern is loaded during a power-up of the high speed memory. The RAM module can include a default preamble pattern, wherein the default preamble pattern is loaded after the power-up of the high speed memory. The initial preamble pattern or the default preamble pattern can be defined by a manufacture of the high speed memory or an OEM of the high speed memory. Additionally, the initial preamble pattern or the default preamble pattern can be updated with a customized preamble pattern based upon a target environment. | 07-21-2011 |
20110276027 | APPLICATORS FOR MICRONEEDLES - An applicator for a microprojection array is described. In one embodiment, the applicator comprises an energy-storing element. Application of force causes the compressed energy-storing element to extend or transition from first and second configurations, releasing stored energy to deploy a holding member in the application which is configured to hold an array of microprojections. In another embodiment, the applicator comprises an energy storing element with two stable configurations, a first stable configuration and second stable configuration. Application of force causes the energy-storing element to transition from the higher energy first stable configuration to the lower energy second stable configuration, releasing the difference in energies of the two states to deploy a holding member in the application which is configured to hold an array of microprojections. | 11-10-2011 |
20120066464 | APPARATUS AND METHOD FOR PROGRAMMABLE READ PREAMBLE - A memory device is provided. The memory device includes a preamble memory and a memory controller. The preamble memory is arranged to store a read preamble such that the read preamble includes a training pattern that is suitable for aligning a capture point for read data. Further, the training pattern is programmable such that the training pattern can be altered at least once subsequent to manufacture of the preamble memory. In response to a read command, the memory controller provides the read preamble stored in the preamble memory, as well as the read data. | 03-15-2012 |
20140255963 | Degradable Detergents - Methods and materials relate to degradable detergents. The degradable detergents have degradable linkages that are cleaved when subjected to elevated temperature and/or reduced pressure. The detergents are compatible with spectrometric analysis, such as mass spectrometry. The surfactant comprises at least one fluorinated alkyl moiety and at least one cleavable moiety, wherein the surfactant degrades into a plurality of volatile degradation products when injected into a mass spectrometer. | 09-11-2014 |
20140276366 | MULTIPLE IMPACT MICROPROJECTION APPLICATORS AND METHODS OF USE - Applicators for a microprojection array capable of multiple impacts and methods of using the applicators are described. | 09-18-2014 |
20140276580 | MICROPROJECTION APPLICATORS AND METHODS OF USE - Applicators for a microprojection array and methods of using the applicators are described. | 09-18-2014 |
Anthony Van Le, San Jose, CA US
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20120182620 | MEDICAL DEVICES WITH INTERNAL MOTORS - A medical device includes an elongate member having a proximal end, a distal end, a body extending between the proximal end and the distal end, and a lumen located within the body, and a rotor rotatably supported in the lumen, the rotor having an opening for allowing light to pass theretherough, wherein the rotor is rotatable about an axis that extends through the opening, wherein the elongate member further has a region for allowing an output light to exit therethrough. | 07-19-2012 |
20120182631 | MOTOR COMPONENTS AND DEVICES INCORPORATING SUCH MOTOR COMPONENTS - A device includes a rotor having a proximal end, a distal end, and a body extending between the proximal and distal ends, wherein the rotor has an opening extending from the proximal end, the rotor being rotatable about an axis that extends through the opening, and wherein the rotor has a port with a port axis that forms an angle relative to the axis, the angle having a value that is larger than zero and less than 180°. | 07-19-2012 |
20120277580 | SYSTEM AND METHOD FOR DILUTING BLOOD IN A VESSEL - A device for delivering fluid inside a vessel includes an elongated member having a proximal end, a distal end, and a channel extending between the proximal end and the distal end, and a first port located at the distal end, wherein the first port is in fluid communication with the channel, wherein the first port faces at least partially towards a proximal direction. | 11-01-2012 |
20130237796 | SUPPORTS FOR COMPONENTS IN CATHETERS - A medical device includes an elongate member having a proximal end, a distal end, a body extending between the proximal end and the distal end, and a lumen located within the body. The medical device also includes a tube located inside the lumen, wherein the tube is rotatably supported inside the lumen, a optical waveguide located inside the tube, and a bearing element located in the lumen and disposed between the tube and the body of the elongate member. The elongate member further has a side wall and a region at the side wall for allowing an output light from the optical waveguide to exit therethrough. | 09-12-2013 |
20130272653 | AXICONS AND METHODS OF MAKING THE SAME - A method of making an axicon includes providing a structure having an axicon-shape cavity, the cavity having a first end and a second end, the first end of the cavity having a cross sectional dimension that is smaller than the second end, placing a polymeric substance into the axicon-shape cavity, and forming an axicon using the polymeric substance. | 10-17-2013 |
20130331689 | ROTATING SHAFT CONTAINING OPTICAL WAVEGUIDE - An imaging device includes a grin lens having a proximal end and a distal end, an optical fiber having a distal end coupled to the proximal end of the grin lens, a tube surrounding the optical fiber, wherein the tube is coupled to the optical fiber and includes a plurality of cutouts, and a beam director coupled to the distal end of the grin lens, wherein the beam director is configured to direct light at an angle relative to a longitudinal axis of the optical fiber. | 12-12-2013 |
20130331709 | GRIN LENS AND METHODS OF MAKING THE SAME - An imaging device includes a grin lens having a proximal end and a distal end, wherein the grin lens is made from a polymeric material, an optical fiber having a distal end coupled to the proximal end of the grin lens, and a beam director coupled to the distal end of the grin lens, wherein the beam director is configured to direct light at an angle relative to a longitudinal axis of the optical fiber. | 12-12-2013 |
Bach H. Le, San Jose, CA US
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20090282128 | FIRMWARE UPGRADE FOR THIN CLIENTS USING ONE OR MORE SERVERS - A process and system for upgrading firmware in a thin client in a network environment. The process may proceed on an automated basis during boot-up by using one or more FTP addresses stored in the thin client. Multiple FTP servers may be accessed. The same firmware upgrades may be stored on more than one FTP server. Different firmware upgrades may instead or in addition be stored on different FTP servers. | 11-12-2009 |
20090282157 | FIRMWARE UPGRADE FOR THIN CLIENTS USING ONE OR MORE SERVERS - A process and system for upgrading firmware in a thin client in a network environment. The process may proceed on an automated basis during boot-up by using one or more FTP addresses stored in the thin client. Multiple FTP servers may be accessed. The same firmware upgrades may be stored on more than one FTP server. Different firmware upgrades may instead or in addition be stored on different FTP servers. | 11-12-2009 |
20140359003 | METHOD AND APPARATUS FOR TRANSFERRING REMOTE SESSION DATA - Examples of systems and methods are provided for communication and for forwarding display data and cursor type related to a remote session between a client device and a remote server. The system may facilitate establishing the remote session with the remote server. After the client device is connected to a remote session, it is determined if the style of the client device's cursor should be changed. The RDP client of the remote server creates the changed cursor based on bitmap details. The change cursor may be a 1-bit or 32-bit cursor. When the remote session is disconnected, the default cursor for the client device is re-instated at the client device. | 12-04-2014 |
Be Thi Le, San Jose, CA US
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20140277084 | IMPLANTS, METHODS OF MANUFACTURING THE SAME, AND DEVICES AND METHODS FOR DELIVERING THE IMPLANTS TO A VASCULAR DISORDER OF A PATIENT - A device for delivering an implant to a vascular disorder of a patient includes a delivery pusher. A stationary blade may be coupled to the delivery pusher. The stationary blade may include a sharp and stationary cutting component for cutting through a suture coupling the implant to the delivery pusher and for thereby releasing the implant when placed in proximity to the vascular disorder. In some cases, the strength of a junction connecting the suture to the implant is equal to or greater than the tensile strength of the suture itself. Additionally, or alternatively, a detachment handle may be fixedly and permanently attached to the delivery pusher such that a user of the device need not couple the detachment handle to the delivery pusher. The detachment handle may include a user manipulable component for initiating a mechanical release of the implant when placed in proximity to the vascular disorder. | 09-18-2014 |
20140277085 | IMPLANTS, METHODS OF MANUFACTURING THE SAME, AND DEVICES AND METHODS FOR DELIVERING THE IMPLANTS TO A VASCULAR DISORDER OF A PATIENT - A device for delivering an implant to a vascular disorder of a patient includes a delivery pusher. A stationary blade may be coupled to the delivery pusher. The stationary blade may include a sharp and stationary cutting component for cutting through a suture coupling the implant to the delivery pusher and for thereby releasing the implant when placed in proximity to the vascular disorder. In some cases, the strength of a junction connecting the suture to the implant is equal to or greater than the tensile strength of the suture itself. Additionally, or alternatively, a detachment handle may be fixedly and permanently attached to the delivery pusher such that a user of the device need not couple the detachment handle to the delivery pusher. The detachment handle may include a user manipulable component for initiating a mechanical release of the implant when placed in proximity to the vascular disorder. | 09-18-2014 |
Bich Le, San Jose, CA US
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20080244577 | SOFTWARE DELIVERY FOR VIRTUAL MACHINES - One embodiment entails delivering a software payload to guest software in a virtual machine so that the software payload is part of a file system accessible by the guest software, wherein delivery avoids a data path involving a network stack of the virtual machine. | 10-02-2008 |
Bich C. Le, San Jose, CA US
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20120265959 | SYSTEM AND METHOD FOR CONVERTING A PHYSICAL DISK TO A VIRTUAL DISK - A method for converting a disk of a physical computer into a virtual disk for use by a virtual machine is described. Contents of the disk of the physical computer are copied into an image file, wherein the image file has a different sector-by-sector organization of the contents than the disk but a logically equivalent file system organization. Hardware configuration information from the image file is then extracted, wherein the hardware configuration information relates to hardware of the physical computer and, based on a comparison of the extracted hardware configuration information and a virtual hardware configuration of the virtual machine, hardware-dependent files in the image file are replaced with substitute files that are compatible with the virtual hardware configuration of the virtual machine. | 10-18-2012 |
Binh Le, San Jose, CA US
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20110051517 | PARTIAL SPEED AND FULL SPEED PROGRAMMING FOR NON-VOLATILE MEMORY USING FLOATING BIT LINES - Partial speed and full speed programming are achieved for a non-volatile memory system. During a program operation, in a first time period, bit lines of storage elements to be inhibited are pre-charged, while bit line of storage elements to be programmed at a partial speed and bit lines of storage elements to be programmed at a full speed are fixed. In a second time period, the bit lines of storage elements to be programmed at the partial speed are driven higher, while the bit lines of storage elements to be inhibited are floated and the bit line of storage elements to be programmed remain fixed. In a third time period, the bit lines of storage elements to be inhibited are driven higher while the bit lines of the storage elements to be programmed at the partial speed or the full speed are floated so that they couple higher. | 03-03-2011 |
Brian Le, San Jose, CA US
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20110085370 | SOFT FORMING REVERSIBLE RESISTIVITY-SWITCHING ELEMENT FOR BIPOLAR SWITCHING - A method and system for forming reversible resistivity-switching elements is described herein. Forming refers to reducing the resistance of the reversible resistivity-switching element, and is generally understood to refer to reducing the resistance for the first time. Prior to forming the reversible resistivity-switching element it may be in a high-resistance state. A first voltage is applied to “partially form” the reversible resistivity-switching element. The first voltage has a first polarity. Partially forming the reversible resistivity-switching element lowers the resistance of the reversible resistivity-switching element. A second voltage that has the opposite polarity as the first is then applied to the reversible resistivity-switching element. Application of the second voltage may further lower the resistance of the reversible resistivity-switching element. Therefore, the second voltage could be considered as completing the forming of the reversible resistivity-switching element. | 04-14-2011 |
20110205782 | STEP SOFT PROGRAM FOR REVERSIBLE RESISTIVITY-SWITCHING ELEMENTS - A method and system for forming, resetting, or setting memory cells is disclosed. One or more programming conditions to apply to a memory cell having a reversible resistivity-switching element may be determined based on its resistance. The determination of one or more programming conditions may also be based on a pre-determined algorithm that may be based on properties of the memory cell. The one or more programming conditions may include a programming voltage and a current limit. For example, the magnitude of the programming voltage may be based on the resistance. As another example, the width of a programming voltage pulse may be based on the resistance. In some embodiments, a current limit used during programming is determined based on the memory cell resistance. | 08-25-2011 |
20120074367 | COUNTER DOPING COMPENSATION METHODS TO IMPROVE DIODE PERFORMANCE - A method of forming a memory cell is provided, the method including forming a diode including a first region having a first conductivity type, counter-doping the diode to change the first region to a second conductivity type, and forming a memory element coupled in series with the diode. Other aspects are also provided. | 03-29-2012 |
20150070965 | FET LOW CURRENT 3D ReRAM NON-VOLATILE STORAGE - Non-volatile storage devices having reversible resistance storage elements are disclosed herein. In one aspect, a memory cell unit includes one or more memory cells and a transistor (e.g., FET) that is used to control (e.g., limit) current of the memory cells. The drain of the transistor may be connected to a first end of the memory cell. If the memory cell unit has multiple memory cells then the drain may be connected to a node that is common to a first end of each of the memory cells. The source of the transistor is connected to a common source line. The gate of the transistor may be connected to a word line. The same word line may connect to the transistor gate of several (or many) different memory cell units. A second end of the memory cell is connected to a bit line. | 03-12-2015 |
20150070966 | METHOD OF OPERATING FET LOW CURRENT 3D RE-RAM - Operating ReRAM memory is disclosed herein. The memory cells may be trained prior to initially programming them. The training may help to establish a percolation path. In some aspects, a transistor limits current of the memory cell when training and programming. A higher current limit is used during training, which conditions the memory cell for better programming. The non-memory may be operated in unipolar mode. The memory cells can store multiple bits per memory cell. A memory cell can be SET directly from its present state to one at least two data states away. A memory cell can be RESET directly to the state having the next highest resistance. Program conditions, such as pulse width and/or magnitude, may depend on the state to which the memory cell is being SET. A higher energy can be used for programming higher current states. | 03-12-2015 |
Canh Le, San Jose, CA US
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20090146601 | Automation systems diagnostics and predictive failure detection - The present invention discloses a system and method for monitoring and diagnosing a robot mechanism. This requires adding intelligence to the diagnostics by parameters of physical robot arm linkages respecting component relative rotation or load transfer; storing rotation or translation relationship parameters characteristic of resonant frequencies between at least one mechanical link; receiving servo motor signals; digitizing and storing servo known normal data time histories; performing a time domain to frequency domain transformation on signal to identify components which are out-of band limit pre-sets. | 06-11-2009 |
20100070077 | Programmed calibration and mechanical impulse response application iin robotic automation systems - The present invention describes a system and method for monitoring robotic arm drift in an automatic real-time continuous fashion, having a controller, memory, servo motor with encoder, robotic arm manipulator linkages, position decoder and counter logic for each link, software instructions as logic stored in memory for enabling the robot, under control of the controller for receiving proximity sensor data from at least one set of marker and link mounted sensor pair, storing proximity sensor data from pair in the memory, comparing the pair position with previous samples, and raising an alert signal where the pair disparity exceeds a pre-set limit. The sensor set disparity over time plots the mechanical drift which is continuously monitored in real-time during normal work operation and addressed in real-time. Catching drift from impulse loads is done through measurement and analysis of impact loads through a 3D accelerometer on or near the arm end-effector, performing a component decoupling of the acceleration data into the three orthogonal dimensions, and determining forces from accelerometer data for each component dimension and response from or affect on wafer payload. | 03-18-2010 |
20120283873 | System for auto-diagnostics of robotic manipulator - The present invention discloses a system and method for monitoring and diagnosing a robot mechanism. This requires adding intelligence to the diagnostics by parameters of physical robot arm linkages respecting component relative rotation or load transfer; storing rotation or translation relationship parameters characteristic of resonant frequencies between at least one mechanical link; receiving servo motor signals; digitizing and storing servo known normal data time histories; performing a time domain to frequency domain transformation on signal to identify components which are out-of band limit pre-sets. | 11-08-2012 |
Chieu Le, San Jose, CA US
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20100098812 | PRODUCT AND PROCESS FOR CREATING INSTANT FLAVORED ICED BEVERAGES - The present invention is a product and method for making an instant iced coffee beverage but may be used to create any type of flavored beverage product. The method of producing an instant iced coffee beverage product comprising of providing a mixture of crushed ice, uncrushed ice, and liquid coffee in a container; a freezing step to freeze the mixture allowing the mixture to freeze into solid phase before the crushed ice substantially melts into the coffee; a sealing step to seal an opening of the container and a storing step to store the container in the freezer at or below freezing point. The product is then thawed in a microwave within a selected time frame which results in a freshly made instant iced coffee beverage. | 04-22-2010 |
Chinh Le, San Jose, CA US
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20080268673 | LOW-PROFILE PCI ADAPTER CARDS WITH HIGH PORT COUNTS - A PCI card comprises upper and lower surfaces; a mounting hole defining first and second holes, the first hole having a larger diameter than the second hole; a stud that is inserted into the mounting hole and flushed to the upper surface; and a port connector provided on the stud to minimize space consumption. The first and second holes are concentric circles. Alternatively, the first and second holes are not perfect circles. | 10-30-2008 |
Chi P. Le, San Jose, CA US
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20130185675 | DATA CAPTURE DESIGN TOOL FOR DESIGNING AND CONFIGURING SYSTEMS WITH ANALOG FRONT ENDS - A method of configuring a system includes a selectable analog output device and an analog front end (AFE). The method includes selecting, via a graphical user interface (GUI), an analog output device that provides an analog output signal, the selected device having predetermined characteristics. The method further includes selecting an operating condition for the system and a performance criterion for the system. The method also includes providing a configuration value for programming the AFE based on the selected operating condition and performance criterion. | 07-18-2013 |
Dang Le, San Jose, CA US
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20120190385 | METHOD AND SYSTEM FOR POPULATING LOCATION-BASED INFORMATION - Embodiments of the present invention disclose a method and system for populating location-based information on a portable electronic device. According to one embodiment, a request to create a memory record on the portable electronic device is received from a user. Based on the geographic location of the portable electronic device, relevant location information associated with a plurality of reference fields of the memory record are determined and displayed on the portable electronic device. | 07-26-2012 |
David Le, San Jose, CA US
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20140108498 | RESOLVING SYNCHRONIZATION CONFLICTS BASED ON STATE INFORMATION - Techniques are described for resolving document change conflicts based on state information. A document management system records, at a client device, changes that a user made to a root client-side instance of a document bundle to create a modified client-side instance of the document bundle, wherein the changes were made while the client device was not connected to a remote storage service. After the changes are recorded, the client device is connected to the remote storage service. In response to determining that a conflict has occurred, the document management system selects a particular resolution action, based, at least in part, on state information associated with at least one of: a user that made the changes, an instance of the document bundle, or the client device on which the changes were made. The document management system then resolves the conflict by performing the particular resolution action. | 04-17-2014 |
Donna T. Le, San Jose, CA US
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20090143386 | Human adam-10 inhibitors - The present invention provides compounds useful for inhibiting the ADAM-10 protein. Such compounds are useful in the in vitro study of the role of ADAM-10 (and its inhibition) in biological processes. The present invention also comprises pharmaceutical compositions comprising one or more ADAM-10 inhibitors according to the invention in combination with a pharmaceutically acceptable carrier. Such compositions are useful for the treatment of cancer, arthritis, and diseases related to angiogenesis. Correspondingly, the invention also comprises methods of treating forms of cancer, arthritis, and diseases related to angiogenesis in which ADAM-10 plays a critical role. The invention also provides methods for making bis-aryl ether sulfonyl chlorides and ADAM-10 modulators therefrom. | 06-04-2009 |
20110021525 | P70S6 Kinase Modulators and Method of Use - The invention provides compounds and methods for inhibition of kinases, more specifically p70S6 kinases. The invention provides compounds for modulating protein kinase enzymatic activity for modulating cellular activities such as proliferation, differentiation, programmed cell death, migration, chemoinvasion and metabolism. Compounds of the invention inhibit, regulate and/or modulate kinase receptor signal transduction pathways related to the changes in cellular activities as mentioned above, and the invention includes compositions which contain these compounds, and methods of using them to treat kinase-dependent diseases and conditions. | 01-27-2011 |
Donna Tra Le, San Jose, CA US
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20100105953 | Human Adam-10 Inhibitors - The present invention provides compounds useful for inhibiting the ADAM-10 protein, with selectivity versus MMP-1. Such compounds are useful in the in vitro study of the role of ADAM-10 (and its inhibition) in biological processes. The present invention also comprises pharmaceutical compositions comprising one or more ADAM-10 inhibitors according to the invention in combination with a pharmaceutically acceptable carrier. Such compositions are useful for the treatment of cancer, arthritis, and diseases related to angiogenesis. Correspondingly, the invention also comprises methods of treating forms of cancer, arthritis, and diseases related to angiogenesis in which ADAM-10 plays a critical role. | 04-29-2010 |
20120071653 | Human Adam-10 Inhibitors - The present invention provides compounds useful for inhibiting the ADAM-10 protein, with selectivity versus MMP-1. Such compounds are useful in the in vitro study of the role of ADAM-10 (and its inhibition) in biological processes. The present invention also comprises pharmaceutical compositions comprising one or more ADAM-10 inhibitors according to the invention in combination with a pharmaceutically acceptable carrier. Such compositions are useful for the treatment of cancer, arthritis, and diseases related to angiogenesis. Correspondingly, the invention also comprises methods of treating forms of cancer, arthritis, and diseases related to angiogenesis in which ADAM-10 plays a critical role. | 03-22-2012 |
20130144056 | Human Adam-10 Inhibitors - The present invention provides compounds useful for inhibiting the ADAM-10 protein, with selectivity versus MMP-1. Such compounds are useful in the in vitro study of the role of ADAM-10 (and its inhibition) in biological processes. The present invention also comprises pharmaceutical compositions comprising one or more ADAM-10 inhibitors according to the invention in combination with a pharmaceutically acceptable carrier. Such compositions are useful for the treatment of cancer, arthritis, and diseases related to angiogenesis. Correspondingly, the invention also comprises methods of treating forms of cancer, arthritis, and diseases related to angiogenesis in which ADAM-10 plays a critical role. | 06-06-2013 |
20140206865 | Human Adam-10 Inhibitors - The present invention provides compounds useful for inhibiting the ADAM-10 protein, with selectivity versus MMP-1. Such compounds are useful in the in vitro study of the role of ADAM-10 (and its inhibition) in biological processes. The present invention also comprises pharmaceutical compositions comprising one or more ADAM-10 inhibitors according to the invention in combination with a pharmaceutically acceptable carrier. Such compositions are useful for the treatment of cancer, arthritis, and diseases related to angiogenesis. Correspondingly, the invention also comprises methods of treating forms of cancer, arthritis, and diseases related to angiogenesis in which ADAM-10 plays a critical role. | 07-24-2014 |
Du Quy Le, San Jose, CA US
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20140050814 | EMBOSSING ASSEMBLY AND METHODS OF PREPARATION - The invention is directed to an embossing assembly and methods for its preparation. The assembly comprises a drum, a non-expandable insert and an embossing sleeve and it is particularly useful for the preparation of microcups used in a display device. The assembly may also comprise only a drum and an embossing sleeve. | 02-20-2014 |
Ferrier Le, San Jose, CA US
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20120244527 | Compositions, Kits and Methods for Synthesis and/or Detection of Nucleic Acids - A composition comprising a thermostable DNA polymerase; and a PCR inhibitor blocking agent, wherein the PCR inhibitor blocking agent is present in an amount effective to enhance tolerance of an assembled PCR to a PCR inhibitor. | 09-27-2012 |
Ferrier N. Le, San Jose, CA US
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20140248623 | System and Method for Determining Copies-per-Unit-Volume Using PCR and Flow Control of Droplets - Methods and systems for quantification of a target nucleic acid in a sample are provided. The method includes forming a plurality of discrete sample portions. Each of the plurality of discrete sample portions comprising a portion of the sample, and a reaction mixture. The method further includes amplifying the plurality of discrete sample portions to form a plurality of discrete processed sample portions. At least one discrete processed sample portion containing nucleic acid amplification reaction products. Fluorescence signals are detected from the at least one of the plurality of discrete processed sample portions to determine a presence of the at least one target nucleic acid. The method also includes determining the respective volumes of the plurality of the plurality of discrete processed sample portions, and estimating the number of copies-per-unit-volume of the at least one target nucleic acid in the sample. Estimating the number of copies-per-unit-volume is based on the number of discrete processed sample portions determined to contain the at least one target nucleic acid therein. | 09-04-2014 |
Hien-Minh Le, San Jose, CA US
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20080254613 | METHODS FOR FORMING METAL INTERCONNECT STRUCTURE FOR THIN FILM TRANSISTOR APPLICATIONS - Methods for forming a metal interconnection structure in thin-film transistor applications are provided in the present invention. In one embodiment, the method may include providing a substrate into a processing chamber, supplying a first gas mixture into the chamber to deposit a metal layer on the substrate, and supplying a second gas mixture into the chamber to deposit a barrier layer on the metal layer. In another embodiment, a metal interconnection structure may include a substrate, a first barrier layer disposed on the substrate, a metal layer disposed on the substrate in a processing chamber, a second barrier layer disposed on the metal layer formed in the processing chamber a second barrier layer disposed on the metal layer formed in the processing chamber, wherein the first barrier layer, the metal layer and the second barrier layer are configured to form a metal interconnection structure for TFT devices. | 10-16-2008 |
20140187045 | SILICON NITRIDE GAPFILL IMPLEMENTING HIGH DENSITY PLASMA - Methods of filling features with silicon nitride using high-density plasma chemical vapor deposition are described. Narrow trenches may be filled with gapfill silicon nitride without damaging compressive stress. A low but non-zero bias power is used during deposition of the gapfill silicon nitride. An etch step is included between each pair of silicon nitride high-density plasma deposition steps in order to supply sputtering which would normally be supplied by high bias power. | 07-03-2014 |
Hienminh H. Le, San Jose, CA US
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20100132775 | ADHESION BETWEEN AZO AND AG FOR THE BACK CONTACT IN TANDEM JUNCTION CELL BY METAL ALLOY - Methods of promoting adhesion between a reflective backing layer and a solar cell substrate are provided. The reflective backing layer is formed over a conductive metal oxide layer as an alloy using reflective and adhesive components, the adhesive components being present in levels generally below about 5 atomic percent. Techniques are disclosed for depositing varying the concentration of the reflective backing layer to localize the adhesive components in an adhesion region near the conductive metal oxide layer. Techniques are also disclosed for boosting bonding species in the conductive metal oxide layer to further enhance adhesion. | 06-03-2010 |
20100224243 | ADHESION BETWEEN AZO AND AG FOR THE BACK CONTACT IN TANDEM JUNCTION CELL BY METAL ALLOY - Methods of promoting adhesion between a reflective backing layer and a solar cell substrate are provided. The reflective backing layer is formed over a conductive metal oxide layer as an alloy using reflective and adhesive components, the adhesive components being present in levels generally below about 5 atomic percent. Techniques are disclosed for depositing varying the concentration of the reflective backing layer to localize the adhesive components in an adhesion region near the conductive metal oxide layer. Techniques are also disclosed for boosting bonding species in the conductive metal oxide layer to further enhance adhesion. | 09-09-2010 |
Hienminh Huu Le, San Jose, CA US
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20120080083 | SEMICONDUCTOR ASSEMBLY WITH A METAL OXIDE LAYER HAVING INTERMEDIATE REFRACTIVE INDEX - A semiconductor assembly is described with a thin metal oxide layer interposed between a transparent conductive oxide and an amorphous silicon layer, along with methods for making this structure. The metal oxide layer has a refractive index or range of refractive indices intermediate between that of the transparent conductive oxide and the amorphous silicon layer, and thus tends to reduce reflection at the interface. Such a layer can be used at the light-facing surface of a light-sensitive device such as a photovoltaic cell to maximize the amount of incident light entering the cell. Titanium oxide is a suitable metal oxide, and has a refractive index between those of silicon and of both indium tin oxide and aluminum-doped zinc oxide, two common transparent conductive oxides. | 04-05-2012 |
Hien Min Huu Le, San Jose, CA US
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20130153413 | SPUTTER GUN SHUTTER - In some embodiments of the present invention, a gun shutter is provided that comprises a gun shutter lip that aligns with a grounded shield lip to form a gap. The gap is operable to prevent contamination from other sputter guns present in the chamber. Additionally, the gun shutter is spaced apart from the face of the target so that a stable plasma may be ignited and maintained between the face of the target and the gun shutter. This allows the gun shutter to be used as a burn-in or conditioning shield and allows the elimination of other shields, thus lowering the size, complexity, and cost of the chamber. | 06-20-2013 |
Hoang Le, San Jose, CA US
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20090104751 | NARROW SEMICONDUCTOR TRENCH STRUCTURE - Systems and methods for narrow semiconductor trench structures. In a first method embodiment, a method for forming a narrow trench comprises forming a first layer of insulating material on a substrate and creating a trench through the first layer of insulating material and into the substrate. A second insulating material is formed on the first layer and on exposed portions of the trench and the second insulating material is removed from the first layer of insulating material and the bottom of the trench. The trench is filled with an epitaxial material and the first layer of insulating material is removed. A narrow trench is formed by the removal of remaining portions of the second insulating material. | 04-23-2009 |
Hung Manh Le, San Jose, CA US
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20100154705 | System for Coating a Tubular Implantable Medical Device - A system for coating a tubular implantable medical device, such as a stent, can include a rotatable applicator and a rotatable support for the medical device. The axes of rotation of applicator and the support can be substantially non-parallel. | 06-24-2010 |
Hung Pham Le, San Jose, CA US
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20090180227 | AUTO-DETECTING CMOS INPUT CIRCUIT FOR SINGLE-VOLTAGE-SUPPLY CMOS - An auto-detecting input circuit is operative to sustain relatively high voltages applied to an input pad and generate corresponding signal levels at a native supply voltage range. The input circuit includes floating wells, corresponding bias selectors, and input biasing transistors to ensure that no gate oxide exposed to external voltages sustains a voltage greater than a predefined value. Bias selectors select an available highest voltage to reverse bias corresponding floating wells and ensure transistors are not electrically overstressed. As input-related terminals experience switching related voltages, the bias selectors select alternate terminals to continue selection of the highest voltage available and provide correct reverse biasing conditions. A resistor and clamp generate translated output voltage levels limited to the native supply voltage range. A latch is triggered by a first input signal excursion above the native supply voltage. The latch output enables pull-down transistors to provide a correct low-level output signal. | 07-16-2009 |
20090262474 | LOW-VOLTAGE CMOS SPACE-EFFICIENT 15 KV ESD PROTECTION FOR COMMON-MODE HIGH-VOLTAGE RECEIVERS - An electrostatic discharge protection device is disposed between true-complement input pins of a differential signal pair and a ground node. A common node couples the three diode stacks together. A first and a second diode stack each connect to one of the differential signal pair input pins. The third diode stack couples to the ground node. Each of the diode stacks is fabricated by a pair of high concentration p-type contact dopant regions within a low concentration n-well region. Each of the p-type contact dopant regions is configured to form back-to-back diodes connected in series with cathodes in common. In protecting common mode receivers, current from an ESD event is channeled to ground rather than to the complementary receiver node. The diode stacks are capable of withstanding a 15 kV incident and save up to 25% in area compared to a fully parallel configuration for differential signal pairs. | 10-22-2009 |
20100127762 | OPEN-DRAIN OUTPUT BUFFER FOR SINGLE-VOLTAGE-SUPPLY CMOS - An open-drain output buffer is operative to sustain relatively high voltages applied to an output pad. The open-drain buffer includes a number of floating wells, output switching devices and corresponding well-bias selectors to ensure that no gate oxide sustains voltages greater than a predefined value. PMOS and NMOS well-bias selectors operate to select and provide an available highest or lowest voltage, respectively, to bias corresponding well-regions and ensure no device switching terminals are electrically over stressed. As output related terminals experience switching related voltage excursions, the well-bias selectors select alternate terminals to continue selection of the respective highest or lowest voltages available and provide correct well-biasing conditions. Voltage dividers are incorporated to generate well-biasing control voltages. By electrical coupling across maximal voltages, the voltage dividers generate reference voltages that induce proper selection of well-bias voltages to the floating wells. | 05-27-2010 |
Khoi T. Le, San Jose, CA US
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20140039513 | LOW PROFILE ELECTRODES FOR AN ANGIOPLASTY SHOCK WAVE CATHETER - Described herein are low-profile electrodes for use with an angioplasty shockwave catheter. A low-profile electrode assembly may have an inner electrode, an insulating layer disposed over the inner electrode such that an opening in the insulating layer is aligned with the inner electrode, and an outer electrode sheath disposed over the insulating layer such that an opening in the outer electrode sheath is coaxially aligned with the opening in the insulating layer. This layered configuration allows for the generation of shockwaves that propagate outward from the side of the catheter. In some variations, the electrode assembly has a second inner electrode, and the insulating layer and outer electrode may each have a second opening that are coaxially aligned with the second inner electrode. An angioplasty shockwave catheter may have a plurality of such low-profile electrode assemblies along its length to break up calcified plaques along a length of a vessel. | 02-06-2014 |
20140052147 | LOW PROFILE ELECTRODES FOR AN ANGIOPLASTY SHOCK WAVE CATHETER - Described herein are low-profile electrodes for use with an angioplasty shockwave catheter. A low-profile electrode assembly may have an inner electrode, an insulating layer disposed over the inner electrode such that an opening in the insulating layer is aligned with the inner electrode, and an outer electrode sheath disposed over the insulating layer such that an opening in the outer electrode sheath is coaxially aligned with the opening in the insulating layer. This layered configuration allows for the generation of shockwaves that propagate outward from the side of the catheter. In some variations, the electrode assembly has a second inner electrode, and the insulating layer and outer electrode may each have a second opening that are coaxially aligned with the second inner electrode. An angioplasty shockwave catheter may have a plurality of such low-profile electrode assemblies along its length to break up calcified plaques along a length of a vessel. | 02-20-2014 |
20150073430 | LOW PROFILE ELECTRODES FOR AN ANGIOPLASTY SHOCK WAVE CATHETER - Described herein are low-profile electrodes for use with an angioplasty shockwave catheter. A low-profile electrode assembly may have an inner electrode, an insulating layer disposed over the inner electrode such that an opening in the insulating layer is aligned with the inner electrode, and an outer electrode sheath disposed over the insulating layer such that an opening in the outer electrode sheath is coaxially aligned with the opening in the insulating layer. This layered configuration allows for the generation of shockwaves that propagate outward from the side of the catheter. In some variations, the electrode assembly has a second inner electrode, and the insulating layer and outer electrode may each have a second opening that are coaxially aligned with the second inner electrode. An angioplasty shockwave catheter may have a plurality of such low-profile electrode assemblies along its length to break up calcified plaques along a length of a vessel. | 03-12-2015 |
Kim Le, San Jose, CA US
Patent application number | Description | Published |
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20090003082 | Method of making memory cell with voltage modulated sidewall poly resistor - A method of making a two terminal nonvolatile memory cell includes forming a first electrode, forming a charge storage medium, forming a resistive element, and forming a second electrode. The charge storage medium and the resistive element are connected in parallel between the first and the second electrodes, and a presence or absence of charge being stored in the charge storage medium affects a resistivity of the resistive element. | 01-01-2009 |
20090003083 | Memory cell with voltage modulated sidewall poly resistor - A two terminal nonvolatile memory cell includes a first electrode, a second electrode, a charge storage medium, and a resistive element. The charge storage medium and the resistive element are connected in parallel between the first and the second electrodes. A presence or absence of charge being stored in the charge storage medium affects a resistivity of the resistive element. | 01-01-2009 |
20110062563 | NON-VOLATILE MEMORY WITH REDUCED MOBILE ION DIFFUSION - Mobile ion diffusion causes a shift in the threshold voltage of non-volatile storage elements in a memory chip, such as during an assembly process of the memory chip. To reduce or avoid such shifts, a coating can be applied to a printed circuit board substrate or a leader frame to which the memory chip is surface mounted. An acrylic resin coating having a thickness of about 10 μm may be used. A memory chip is attached to the coating using an adhesive film. Stacked chips may be used as well. Another approach provides metal barrier traces over copper traces of the printed circuit board, within a solder mask layer. The metal barrier traces are fabricated in the same pattern as the copper traces but are wider so that they at least partially envelop and surround the copper traces. Corresponding apparatuses and fabrication processes are provided. | 03-17-2011 |
20110075482 | MAINTAINING INTEGRITY OF PRELOADED CONTENT IN NON-VOLATILE MEMORY DURING SURFACE MOUNTING - A non-volatile memory chip package is prepared for surface mounting to a substrate in a solder reflow process by programming erased blocks to higher threshold voltage levels, to improve data retention for blocks which are preloaded with content, such as by an electronic device manufacturer. Following the surface mounting, the previously-erased blocks are returned to the erased state. The threshold voltage of storage elements of the preloaded blocks can change during the surface mounting process due to a global charge effect phenomenon. The effect is most prominent for higher state storage elements which are surrounded by erased blocks, in a chip for which the wafer backside was thinned and polished. The erased blocks can be programmed using a single program pulse without performing a verify operation, as a wide threshold voltage distribution is acceptable. | 03-31-2011 |
Ky Le, San Jose, CA US
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20090245128 | INTEGRATED SWITCH TAP ARRANGEMENT WITH VISUAL DISPLAY ARRANGEMENT AND METHODS THEREOF - An arrangement in a network device for monitoring network traffic is provided. The arrangement includes a set of network ports, which includes a set of input network ports for receiving the network traffic and a set of output network ports for outputting the network traffic from the network device. The arrangement also includes a switch chip, wherein the switch chip is configured at least for analyzing the network traffic. The arrangement further includes a set of monitoring ports, which is configured to receive the network traffic from the set of network ports. The arrangement yet also includes a tap module, which is configured at least for intercepting at least part of the network traffic flowing through the network device and forwarding at least part of the network traffic to at least one of the set of monitoring ports. | 10-01-2009 |
20120176917 | INTEGRATED SWITCH TAP ARRANGEMENT AND METHODS THEREOF - An integrated switch tap device for managing and monitoring network traffic is provided. The device includes a set of network ports for receiving and outputting the network traffic. The device also includes a first logic arrangement for performing routing functionalities and a first CPU for processing the routing functionalities. The device further includes a set of monitoring ports that is coupled to one or more monitoring devices. The device yet also includes a first tap module, which is configured at least for intercepting at least part of the network traffic flowing through the network device, creating a copy of at least part of the network traffic, and forwarding the copy to at least one of the set of monitoring ports. The device moreover includes a second CPU configured at least for processing tap functionalities associated with the first tap module. | 07-12-2012 |
Ky Hong Le, San Jose, CA US
Patent application number | Description | Published |
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20090040932 | METHODS AND ARRANGEMENT FOR UTILIZATION RATE DISPLAY - An arrangement in a network device for displaying statistical data pertaining to data traffic that traverses the network device is provided. The arrangement includes a power supply arrangement for providing power to circuitry of the network device. The arrangement also includes a set of network ports, which includes a set of input network ports for receiving the data traffic and a set of output network ports for outputting the data traffic from the network device. The arrangement further includes logic arrangement for analyzing data traffic and for displaying statistical data pertaining to the data traffic. The arrangement yet also includes a visual display arrangement, which is configured to display the statistical data, whereas the data traffic is configured to traverse the network device between the set of input network ports and the set of output network ports irrespective whether power is provided to the circuitry of the network device. | 02-12-2009 |
20090041051 | ENHANCED COMMUNICATION NETWORK TAP PORT AGGREGATOR ARRANGEMENT AND METHODS THEREOF - An arrangement in a network device for facilitating at least one of multiple connection speeds with a network, active response between a monitoring device and an end-device, and power over Ethernet (POE) over a network is provided. As a facilitator of multiple connection speeds, the arrangement includes a plurality of physical layer interface (PHY) and media access controller (MAC) that are configured to support multiple speeds. As a facilitator of active response, the arrangement includes a logic arrangement for multicasting a set of instructions that is sent from a monitoring port. As a facilitator of POE, the arrangement is configured to receive data traffic (e.g., data packets and/or power packets) through a first network port and to send the data traffic out a second network port. | 02-12-2009 |
20110149801 | ARRANGEMENT FOR AN ENHANCED COMMUNICATION NETWORK TAP PORT AGGREGATOR AND METHODS THEREOF - An arrangement in a network device for facilitating multiple connection speeds with a network is provided. The arrangement includes a set of network ports that includes a set of input network ports for receiving data traffic and a set of output network ports for outputting the data traffic from the network device. The arrangement also includes a logic component configured for managing the data traffic and for aggregating the data traffic. The arrangement further includes a monitoring port that is configured to receive the aggregated data traffic. The arrangement also includes a plurality of physical layer interfaces, wherein each physical layer interface is configured to support the multiple connection speeds. The arrangement moreover includes a media access controller that is configured to support at least a single connection speed of the multiple connection speeds. | 06-23-2011 |
20110164521 | ARRANGEMENT FOR UTILIZATION RATE DISPLAY AND METHODS THEREOF - A network arrangement for automatically displaying statistical data is provided. The arrangement includes a port for receiving data traffic, a physical interface layer for copying data traffic, and a bus for directing a copy of the data traffic to monitoring devices. The arrangement also includes logic arrangement for analyzing the copy of data traffic, which includes at least a Receive Data Valid signal (including a rising edge and a falling edge) and a Receive Clock signal (including a rising edge and a falling edge). The arrangement further includes incrementing a first counter when the Receive Data Valid rising edge is received and incrementing a second counter when at least one of the Receive Clock rising edge and the Receive Clock falling edge is received. The arrangement moreover includes logic arrangement for displaying statistical data pertaining to the data traffic and a visual display arrangement for displaying statistical data. | 07-07-2011 |
20110211446 | GIGABITS ZERO-DELAY TAP AND METHODS THEREOF - A gigabits zero-delay arrangement for enabling continuous monitoring of data traversing through a network in a high-speed Ethernet environment is provided. The arrangement includes a high-speed network device configured for monitoring the data flowing through the network. The arrangement also includes a primary power source for providing a first power to circuitry of the gigabits zero-delay arrangement. The arrangement further includes a sensor controller configured for monitoring power flowing into the high-speed network device and for establishing an alternative communication link. | 09-01-2011 |
Le Le, San Jose, CA US
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20090088838 | ADJUSTABLE ANNULOPLASTY RING AND ACTIVATION SYSTEM - An adjustable annuloplasty device is described. In some embodiments, the device includes a body member having a surface that conforms at least partially to a cardiac valve annulus. The body member comprises a shape-memory member that transforms from a first configuration to a second configuration in response to an applied energy. In some embodiments, the device further includes a first electrode assembly, coupled to the shape-memory member, that transfers energy to the shape-memory member, and a second electrode assembly, coupled to the shape-memory member, that transfers at least a portion of the energy away from the shape-memory member. | 04-02-2009 |
20090216322 | ADJUSTABLE ANNULOPLASTY RING AND ACTIVATION SYSTEM - An adjustable implantable medical device and adjustment device are described. In some embodiments, the adjustment device includes a lead with a distal end modified to permit better engagement and securement to the described implantable devices. In some embodiments, the contact of the lead is bent. Some embodiments include a coil that engages and secures the lead to the implantable device. Some embodiments include a suture line to aid in securing the lead to the implantable device. | 08-27-2009 |
20120136433 | INTRAOPERATIVE AND POST-OPERATIVE ADJUSTMENT OF AN ANNULOPLASTY RING - An intraoperative adjustment device is described. In some embodiments, the device includes an elongate body including a proximal end and a distal end, the distal end configured to penetrate an outer surface of an adjustable cardiac implant implanted in a patient's heart, and the proximal end and the distal end connected by at least one energy-transfer member. In some embodiments, the distal end includes at least one electrode coupled to the energy-transfer member and configured to deliver an activation energy to the adjustable cardiac implant. In some embodiments, the proximal end is configured to attach to an energy source that provides the activation energy. In some embodiments, the proximal end is configured to be located outside the patient's body while the distal end is coupled to the adjustable cardiac implant that is implanted in the patient's heart. | 05-31-2012 |
20120209379 | ADJUSTABLE ANNULOPLASTY RING AND ACTIVATION SYSTEM - An adjustable annuloplasty device is described. In some embodiments, the device includes a body member having a surface that conforms at least partially to a cardiac valve annulus. The body member comprises a shape-memory member that transforms from a first configuration to a second configuration in response to an applied energy. In some embodiments, the device further includes a first electrode assembly, coupled to the shape-memory member, that transfers energy to the shape-memory member, and a second electrode assembly, coupled to the shape-memory member, that transfers at least a portion of the energy away from the shape-memory member. | 08-16-2012 |
20120215305 | ADJUSTABLE ANNULOPLASTY RING AND ACTIVATION SYSTEM - An adjustable implantable medical device and adjustment device are described. In some embodiments, the adjustment device includes a lead with a distal end modified to permit better engagement and securement to the described implantable devices. In some embodiments, the contact of the lead is bent. Some embodiments include a coil that engages and secures the lead to the implantable device. Some embodiments include a suture line to aid in securing the lead to the implantable device. | 08-23-2012 |
Le T. Le, San Jose, CA US
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20080262583 | METHOD FOR TREATING INTERVERTEBRAL DISC - A device is described that may be positioned at a location in an intervertebral disc for diagnosis or treatment of the disc. Treatment may include, for example, applying energy or removing material, and may decrease intradiscal pressure. Radiofrequency energy may be applied. A percutaneous method of repairing a fissure in the annulus pulposus comprises placing an energy source adjacent to the fissure and providing sufficient energy to the fissure to raise the temperature to at least about 45-70° C. and for a sufficient time to cause the collagen to weld. An intervertebral fissure also can be treated by placing a catheter with a lumen adjacent to the fissure and injecting sealant into the fissure via the catheter, thereby sealing the fissure. An intervertebral fissure additionally can be treated by providing a catheter having a distal end, a proximal end, a longitudinal axis, and an intradiscal section at the catheter's distal end on which there is at least one functional element. The next step is applying a force longitudinally to the proximal of the catheter which is sufficient to advance the intradiscal section through the nucleus pulposus and around an inner wall of an annulus fibrosus, but which force is insufficient to puncture the annulus fibrosus. Next the functional element is positioned at a selected location of the disc by advancing or retracting the catheter and optionally twisting the proximal end of the catheter. Then the functional unit treats the annular fissure. Optionally, there is an additional step of adding a substance to seal the fissure. An externally guidable intervertebral disc apparatus also is disclosed. | 10-23-2008 |
Loc T. Le, San Jose, CA US
Patent application number | Description | Published |
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20090281862 | JOB EDITOR INTERFACE BASED ON DYNAMIC DEVICE CAPABILITIES - A graphical job editor for creating jobs in a multi-layer workflow architecture for a print shop is disclosed. The graphical job editor presents to a user a graphical representation of every device and activity available in the print shop as provided by the service bus layer of the workflow architecture. Further, the present information regarding the capabilities of each such device and activity so presented may then be defined by the user through simple, graphical user interface objects and techniques. The graphical job editor uses the present information in the device capabilities presented by the service bus. The present device capability information of each device and activity in a job may be updated as each activity is added to the job being defined to thus assure creation of a valid job that may be processed in a particular workflow architecture. | 11-12-2009 |
20090282412 | MULTI-LAYER WORKFLOW ARCHITECTURE - A multi-layer workflow architecture for a print shop is disclosed. The workflow architecture includes a workflow front end, service bus, and service providers. The workflow front end provides an interface to print shop operators. The service providers are each associated with a device in the print shop. The service bus represents the layer between the workflow front end and the service providers. In operation, the service providers report device capabilities for devices to the service bus. The workflow front end receives the device capabilities from the service bus, and provides the device capabilities to a user to allow the user to define a job ticket based on the device capabilities. The service bus identifies the processes defined in the job ticket, and identifies the service providers operable to provide the processes. The service bus then routes process messages to the identified service providers to execute the processes on the devices. | 11-12-2009 |
20100060909 | EXTENSIBLE CONTROL OF DOCUMENT PROCESSING - In an embodiment, a method comprises, in a print application management computer program that enables a user to generate a printed application using one or more document processing devices: identifying a plug-in that extends one or more capabilities of the print application management computer program; extending the print application management computer program to include the identified plug-in, including reconfiguring a graphical user interface of the print application management computer program to include one or more GUI widgets associated with the identified plug-in. | 03-11-2010 |
20100135687 | AUTOMATIC INITIATION OF PRINT JOB PREPROCESSING BEFORE RELEASE OF PRINT JOB - Print job management information, including management actions performed by a press operator, is collected from a print job manager. An evaluator evaluates the collected print job management information using an evaluation algorithm to generate a predicted press-operator job release sequence of one or more of the print jobs. The evaluation algorithm may be adapted to predict print job release behavior of the press operator. A print job is selected in accordance with the predicted press-operator job release sequence. Print job preprocessing of the selected print job is initiated in the printing system, prior to actual release of the print job by the press operator. Actual print-job release information may be compared with a predicted job release sequence to revise the evaluation algorithm. | 06-03-2010 |
20100138697 | REGRESSION TESTING OF A PRINTING SYSTEM - A standard input for a regression test is processed in a printing system in a first (standard) configuration to generate a standard output. The standard output may include a standard PDL output and a standard bitmap. The standard input is processed in the printing system in a second configuration to be tested to generate regression test output. The regression test output may include a test PDL output and test bitmap. The regression test output and the standard output are compared to determine if changes included in the second configuration of the printing system produce an undesirable effect. Each standard input and corresponding standard output is identified by a unique test identifier and is stored. | 06-03-2010 |
20120257535 | Measuring Instantaneous Bit Rate In a Network Connection - Methods and apparatuses described herein are configured to calculate the instantaneous bit rate of a network connection. According to certain aspects, conventional solutions measure average bit rate of a network, whereas the techniques described herein are configured to measure the instantaneous bit rate. According to further aspects, structurally, conventional solutions require external devices (hosts or servers) and a plurality of data packets for measurement, whereas the present invention is self-referenced and requires, in principle, only two network packets, of any type, for measuring the instantaneous bit rate. The instantaneous bit rate can then be used to adjust the transmission bit rate of network packets to optimize the network connection such that the bandwidth of the network connection is fully utilized and packet loss is avoided. | 10-11-2012 |
Lynn B. Le, San Jose, CA US
Patent application number | Description | Published |
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20080273263 | LUBRICATED LIMITER FOR FLUID DYNAMIC BEARING MOTOR - In one example, a FDB motor having a top-cover attached, EM biased bearing system is provided. The motor includes a shaft and rotor disposed for relative rotation, and an axial limiter for restricting axial movement of the rotor with respect to the shaft, wherein the axial limiter is wet or lubricated during contact. The limiter is spatially fixed with respect to one of the shaft or the rotor and disposed with an axial end surface opposing a surface portion spatially fixed with respect to the other of the shaft or the rotor to form a gap therebetween. The gap may be filled with a fluid such as bearing lubricant, thereby providing a lubricated or wet contact surface to restrict axial movement of the shaft and rotor. Additionally, one or both surfaces may include a groove or slot to provide circulation of fluid through the gap. | 11-06-2008 |
20090279818 | FOLDED FLUID CHANNEL FOR A FLUID DYNAMIC BEARING MOTOR - A system and method are provided for sealing a fluid dynamic bearing motor. A first and a second folded fluid channel are shaped for maximizing bearing axial span and establishing angular stiffness, to resist gyroscopic rocking of the facing bearing surfaces. The first folded fluid channel is limited to occupying at least a portion of the same axial space as the bearing. A first and a second fluid sealing system are connected to opposite axial ends of the bearing. The first fluid sealing system forms an active pumping seal to pump fluid during motor rotation. In an aspect, a top cover attached shaft, and a single thrust surface are employed, allowing for a rigid motor structure and power reduction in applications including high rotational speed disc drives. Also, by employing a rigid shaft design, significantly lower amplitude radial vibration responses are exhibited at higher frequencies than prior art motor designs. | 11-12-2009 |
20100053807 | LUBRICATED LIMITER FOR FLUID DYNAMIC BEARING MOTOR - A component for restricting relative movement of a rotor and a shaft is disclosed. A motor may include a shaft and a rotor, where the rotor is disposed for relative rotation with respect to said shaft. A component is operable to restrict relative movement of the rotor and the shaft, where the component includes a first surface operable to receive a fluid. | 03-04-2010 |
20100142869 | Fluid Pumping Capillary Seal For A Fluid Dynamic Bearing - An apparatus and method are provided for a robust and shock resistant fluid dynamic bearing. A fluid sealing system with fluid pumping and capillary features provides increased reliability and performance for small form factor disc drive memory systems. Concerns of motor jog are addressed, jog being the rapid and repeated opening and closing of spaces between relatively rotatable components that can dispel oil from, or draw air into, these spaces. The fluid pumping capillary sealing system includes a fluid pumping groove with a rib portion and a slot portion for pumping fluid. The fluid pumping capillary sealing system also includes a capillary seal. In an aspect, a sweeping rib sweeps fluid toward the bearing. A truncated rib is situated adjacent to the sweeping rib, the truncated rib extending a shorter radial distance as compared to the sweeping rib and forming a plenum region. | 06-10-2010 |
20130241323 | STATOR ASSEMBLY SUPPORT - Provided herein is an apparatus, having a cylindrical structure extending from a base; a stator assembly having a stator ring and a plurality of stator teeth extending from an outer diameter of the stator ring; and a stator assembly support having a supporting means for supporting at least one of the stator ring or the plurality of stator teeth, wherein the stator assembly support is configured to dampen mechanical vibrations in the base. | 09-19-2013 |
20140133789 | FOLDED FLUID CHANNEL FOR A FLUID DYNAMIC BEARING MOTOR - An apparatus includes a stationary shaft and a sleeve rotatable with respect to the shaft. A fluid dynamic bearing is defined by the stationary shaft and the sleeve. A fluid channel includes a first axially extending portion in the fluid dynamic bearing, and a radially extending portion extending radially outward from the first axially extending portion. In addition the fluid channel includes a second axially extending portion extending axially downward from the radially extending portion. The apparatus further includes a pump seal including grooves formed in the second axially extending portion. | 05-15-2014 |
Lynn Bich-Quy Le, San Jose, CA US
Patent application number | Description | Published |
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20080273822 | Method And System For Withstanding A Shock Event For A Fluid Dynamic Bearing Motor - A system, method and means is provided for withstanding mechanical shock for use with fluid dynamic bearings. A sealing system is provided that withstands 1000 G shock events. In an aspect, a grooved pumping seal employed between a thrust plate and a shield, a thrust plate having spiral grooves, a fluid recirculation passageway, and a reservoir creates an asymmetric pressure gradient. In an aspect, fluid is retained and air is purged utilizing an enlarged fluid reservoir, axial channels and an angled fill hole. In an aspect, a shaft is attached to a top cover supplying radial stiffness, and an enlarged single-sided thrust plate improves dynamic parallelism. | 11-06-2008 |
20110285232 | SHOCK RESISTANT FLUID DYNAMIC BEARING MOTOR - A system, method and means is provided for withstanding mechanical shock for use with fluid dynamic bearings. A sealing system is provided that withstands | 11-24-2011 |
20120087607 | RESTRAINING MOTOR SHAFT PLAY - An apparatus and associated method characterized by an enclosure having a side member that defines a substantially orthogonally directed cavity penetrating the side member. A motor shaft in the enclosure has a distal end that is operably aligned with the cavity. A shear transfer member in the enclosure is operably affixed to the motor shaft. One of the shaft and the shear transfer member is sized for a close mating engagement with the side member in the cavity, and the shear transfer member is further sized for being simultaneously shear coupled to the side member. | 04-12-2012 |
20130064485 | Apparatus for fluid recirculation - A system, method and means is provided for withstanding mechanical shock for use with fluid dynamic bearings. A sealing system is provided that withstands 1000 G shock events. In an aspect, a grooved pumping seal employed between a thrust plate and a shield, a thrust plate having spiral grooves, a fluid recirculation passageway, and a reservoir creates an asymmetric pressure gradient. In an aspect, fluid is retained and air is purged utilizing an enlarged fluid reservoir, axial channels and an angled fill hole. In an aspect, a shaft is attached to a top cover supplying radial stiffness, and an enlarged single-sided thrust plate improves dynamic parallelism. | 03-14-2013 |
20130259413 | MOTOR INCLUDING RESERVOIR AND HUB CAP - Provided herein is an apparatus, including a stationary component; a rotatable component; a fluid dynamic bearing defined by the stationary component and the rotatable component; a first channel substantially parallel to the fluid dynamic bearing; a second channel substantially perpendicular to the first channel; and a fluid reservoir substantially parallel to the first channel, wherein the second channel fluidly connects the fluid reservoir to the first channel. | 10-03-2013 |
20140023300 | FLUID PUMPING CAPILLARY SEAL FOR A FLUID DYNAMIC BEARING - An apparatus and method are provided for a robust and shock resistant fluid dynamic bearing. A fluid sealing system with fluid pumping and capillary features provides increased reliability and performance for small form factor disc drive memory systems. Concerns of motor jog are addressed, jog being the rapid and repeated opening and closing of spaces between relatively rotatable components that can dispel oil from, or draw air into, these spaces. The fluid pumping capillary sealing system includes a fluid pumping groove with a rib portion and a slot portion for pumping fluid. The fluid pumping capillary sealing system also includes a capillary seal. In an aspect, a sweeping rib sweeps fluid toward the bearing. A truncated rib is situated adjacent to the sweeping rib, the truncated rib extending a shorter radial distance as compared to the sweeping rib and forming a plenum region. | 01-23-2014 |
20140140644 | FLUID BEARING WITH NON-UNIFORM GROOVES - Provided herein is an apparatus, including a fluid dynamic bearing, wherein the fluid dynamic bearing includes a set of pressure-generating grooves, and wherein the set of pressure-generating grooves includes a plurality of chevron-shaped grooves, each chevron-shaped groove including at least two selected from a non-uniform depth, non-uniform angle, a non-uniform width, or a non-uniform length, selected to provide a predetermined spindle-motor stiffness to the journal bearing during steady-state operation and during a shock event. | 05-22-2014 |
20140293479 | LOCKING DISK CLAMP - Provided herein is an apparatus, including a plurality of teeth extending from an outer perimeter of an annular disk clamp to an inner perimeter of the annular disk clamp and an annular groove in an outer perimeter of a hub, wherein the plurality of teeth do not engage the annular groove of the hub when the disk clamp is unlocked into an unlocked form, and wherein the plurality of teeth engage the annular groove of the hub when the annular disk clamp is locked into a locked form, clamping at least one disk onto the hub at a mounting point for the at least one disk. | 10-02-2014 |
20140293480 | NOTCHED DISK CLAMP - Provided herein is an apparatus, including a plurality of disk clamp notches spaced about an outer lip of an annular disk clamp; an annular groove in an outer perimeter of a hub; and a mounting point on the hub for at least one disk, wherein the annular disk clamp occupies the annular groove of the hub, clamping the at least one disk onto the hub at the mounting point for the at least one disk. | 10-02-2014 |
20140293483 | DISK CLAMP AND LOCK - Provided herein is an apparatus, including a clamping means for clamping at least one disk onto a hub at a mounting point on the hub for the at least one disk, wherein the clamping means is configured to sit wholly above the at least one disk; a seat in an outer perimeter of the hub configured to receive the clamping means; and a locking means for locking the clamping means onto the hub. | 10-02-2014 |
20140293484 | DISK CLAMP WITH FLANGES - Provided herein is an apparatus, including a plurality of flanges extending to form an inner perimeter of an inner opening of an annular disk clamp; and an annular groove in an outer perimeter of a hub configured to receive the plurality of flanges of the annular disk clamp, wherein the disk clamp is seated above at least one disk when clamping the at least one disk onto the hub at a mounting point for the at least one disk. | 10-02-2014 |
Minh Huong Le, San Jose, CA US
Patent application number | Description | Published |
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20140113064 | METHOD AND SYSTEM FOR OPTICAL CALIBRATION - A system and method of calibrating optical measuring equipment includes optically measuring discrete objects of a first known predictable pattern from a calibration apparatus, wherein the first known predictable pattern is a bit pattern. A recording surface optical reader is calibrated based on the optically measuring. Using the first known predictable pattern, contamination is filtered from the results of the optically measuring. | 04-24-2014 |
Minh-Huu Le, San Jose, CA US
Patent application number | Description | Published |
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20130122643 | Nitrogen Reactive Sputtering of Cu-In-Ga-N for Solar Cells - Methods for forming Cu—In—Ga—N (CIGN) layers for use in TFPV solar panels are described using reactive PVD deposition in a nitrogen containing atmosphere. In some embodiments, the CIGN layers can be used as an absorber layer and eliminate the need of a selenization step. In some embodiments, the CIGN layers can be used as a protective layer to decrease the sensitivity of the CIG layer to oxygen or moisture before the selenization step. In some embodiments, the CIGN layers can be used as an adhesion layer to improve the adhesion between the back contact layer and the absorber layer. | 05-16-2013 |
20130189526 | Heat Stable SnAl and SnMg Based Dielectrics - A transparent dielectric composition comprising tin, oxygen and one of aluminum or magnesium with preferably higher than 15% by weight of aluminum or magnesium offers improved thermal stability over tin oxide with respect to appearance and optical properties under high temperature processes. For example, upon a heat treatment at temperatures higher than 500 C, changes in color and index of refraction of the present transparent dielectric composition are noticeably less than those of tin oxide films of comparable thickness. The transparent dielectric composition can be used in high transmittance, low emissivity coated panels, providing thermal stability so that there are no significant changes in the coating optical and structural properties, such as visible transmission, IR reflectance, microscopic morphological properties, color appearance, and haze characteristics, of the as-coated and heated treated products. | 07-25-2013 |
20130194668 | METHOD OF MAKING COATED ARTICLE INCLUDING ANTI-REFLECTION COATING WITH DOUBLE COATING LAYERS INCLUDING MESOPOROUS MATERIALS, AND PRODUCTS CONTAINING THE SAME - Certain examples relate to a method of making an antireflective (AR) coating supported by a glass substrate. The anti-reflection coating may include porous metal oxide(s) and/or silica, and may be produced using a sol-gel process. The pores may be formed and/or tuned in each layer respectively in such a manner that the coating ultimately may comprise a porous matrix, graded with respect to porosity. The gradient in porosity may be achieved by forming first and second layers using one or more of (a) nanoparticles of different shapes and/or sizes, (b) porous nanoparticles having varying pore sizes, and/or (c) compounds/materials of various types, sizes, and shapes that may ultimately be removed from the coating post-deposition (e.g., carbon structures, micelles, etc., removed through combustion, calcination, ozonolysis, solvent-extraction, etc.), leaving spaces where the removed materials were previously located. | 08-01-2013 |
20140034957 | Index-Matched Insulators - Devices are described including a first component and a second component, wherein the first component comprises a Group III-N semiconductor and the second component comprises a bimetallic oxide containing tin, having an index of refraction within 15% of the index of refraction of the Group III-N semiconductor, and having negligible extinction coefficient at wavelengths of light emitted or absorbed by the Group III-N semiconductor. The first component is in optical contact with the second component. Exemplary bimetallic oxides include Sn | 02-06-2014 |
20140092462 | Electrochromic Device with Improved Transparent Conductor and Method for Forming the Same - Embodiments provided herein describe electrochromic devices and methods for forming electrochromic devices. The electrochromic devices include a transparent substrate, a transparent conducting oxide layer coupled to the transparent substrate, and a layer of electrochromic material coupled to the transparent conducting oxide layer. The transparent conducting oxide layer includes indium and zinc. | 04-03-2014 |
20140124725 | Resistive Random Access Memory Cells Having Doped Current Limiting layers - Provided are semiconductor devices, such as resistive random access memory (ReRAM) cells, that include current limiting layers formed from doped metal oxides and/or nitrides. These current limiting layers may have resistivities of at least about 1 Ohm-cm. This resistivity level is maintained even when the layers are subjected to strong electrical fields and/or high temperature annealing. In some embodiments, the breakdown voltage of a current limiting layer may be at least about 8V. Some examples of such current limiting layers include titanium oxide doped with niobium, tin oxide doped with antimony, and zinc oxide doped with aluminum. Dopants and base materials may be deposited as separate sub-layers and then redistributed by annealing or may be co-deposited using reactive sputtering or co-sputtering. The high resistivity of the layers allows scaling down the size of the semiconductor devices including these layer while maintaining their performance. | 05-08-2014 |
20140161989 | Anti-Glare Using a Two-Step Texturing Process - Methods for forming anti-glare coatings including forming a layer using a sol-gel process are described. The layer further includes at least one of porogens, nanoparticles, or photosensitive macromolecules. The porogens, nanoparticles, or photosensitive macromolecules are removed using a thermal treatment or UV treatment to impart porosity and surface roughness to the layer. Alternatively, the layer may be roughened using a mechanical process. The layer can optionally be subjected to a curing step. The curing step may be a thermal curing process or a chemical curing process. | 06-12-2014 |
20140161990 | Anti-Glare Glass/Substrate Via Novel Specific Combinations of Dry and Wet Processes - Methods for depositing layers by PVD, wherein the PVD process parameters are selected to impart porosity in the layer are described. The porous layers are then exposed to a vapor or liquid binder material to fill the pores and increase the mechanical strength of the layer and the adhesion of the layer. Optionally, a curing step may be applied to the layer. Methods for depositing polycrystalline metal oxide layers using PVD or CVD are described. Optionally, the layers are exposed to an anneal step. The polycrystalline metal oxide layers are then exposed to a vapor or liquid texturing reagent to texture the surface of the layer. | 06-12-2014 |
20140166472 | Method and apparatus for temperature control to improve low emissivity coatings - A method for making low emissivity panels, comprising cooling the article before or during sputter depositing a coating layer, such as a seed layer or an infrared reflective layer. The cooling process can improve the quality of the infrared reflective layer, which can lead to better transmittance in visible regime, block more heat transfer from the low emissivity panels, and potentially can reduce the requirements for other layers, so that the overall performance, such as durability, could be improved. | 06-19-2014 |
20140168759 | Methods and apparatuses for patterned low emissivity panels - A method for making low emissivity panels, comprising forming a patterned layer on a transparent substrate. The patterned layers can offer different color schemes or different decorative appearance styles for the coated panels, or can offer gradable thermal efficiency through the patterned layers. | 06-19-2014 |
20140170049 | Low Refractive Index Material By Sputtering Deposition Method - A method for forming boron oxide films formed using reactive sputtering. The boron oxide films are candidates as an anti-reflection coating. Boron oxide films with a refractive index of about 1.38 can be formed. The boron oxide films can be formed using power densities between 2 W/cm | 06-19-2014 |
20140170308 | ANTIREFLECTIVE COATINGS WITH GRADATION AND METHODS FOR FORMING THE SAME - Embodiments provided herein describe antireflective coatings and methods for forming antireflective coatings. A substrate is provided. A first antireflective layer is formed over the substrate. The first antireflective layer has a first refractive index. A second antireflective layer is formed on the first antireflective layer. The second antireflective layer has a second refractive index. The first antireflective layer and the second antireflective layer jointly form an antireflective coating. The antireflective coating is graded such that the antireflective coating comprises at least three sub-layers, each of the at least three sub-layers having a unique refractive index. | 06-19-2014 |
20140170338 | pvd chamber and process for over-coating layer to improve emissivity for low emissivity coating - A method for making low emissivity panels, including control the ion characteristics, such as ion energy, ion density and ion to neutral ratio, in a sputter deposition process of a layer deposited on a thin conductive silver layer. The ion control can prevent or minimize degrading the quality of the conductive silver layer, which can lead to better transmittance in visible regime, block more heat transfer from the low emissivity panels, and potentially can reduce the requirements for other layers, so that the overall performance, such as durability, could be improved. | 06-19-2014 |
20140170413 | Silver Based Conductive Layer For Flexible Electronics - Methods for making conducting stacks includes forming a doped or alloyed silver layer sandwiched between two layers of transparent conductive oxide such as indium tin oxide (ITO). The doped silver or silver alloy layer can be thin, such as between 1.5 to 20 nm and thus can be transparent. The doped silver or silver alloy can provide improved ductility property, allowing the conductive stack to be bendable. The transparent conductive oxide layers can also be thin, allowing the conductive stack can have improved ductility property. | 06-19-2014 |
20140170421 | Low-E Panel with Improved Barrier Layer and Method for Forming the Same - Embodiments provided herein describe low-e panels and methods for forming low-e panels. A transparent substrate is provided. A reflective layer is formed above the transparent substrate. A titanium-yttrium oxide layer is deposited above the transparent substrate, or above the transparent substrate and the reflective layer, which may enhance optical performance. | 06-19-2014 |
20140170422 | Low emissivity coating with optimal base layer material and layer stack - A method for making low emissivity panels, including forming a base layer to promote a seed layer for a conductive silver layer. The base layer can be an amorphous layer or a nanocrystalline layer, which can facilitate zinc oxide seed layer growth, together with smoother surface and improved thermal stability. The base layer can include doped tin oxide, for example, tin oxide doped with Al, Ga, In, Mg, Ca, Sr, Sb, Bi, Ti, V, Y, Zr, Nb, Hf, Ta, or any combination thereof. The doped tin oxide base layer can influence the growth of (002) crystallographic orientation in zinc oxide, which in turn serves as a seed layer template for silver (111). | 06-19-2014 |
20140170434 | Two Layer Ag Process For Low Emissivity Coatings - Two layer silver process comprising a silver layer deposited on a doped silver layer can improve the adhesion of the silver layer on a substrate, minimizing agglomeration to provide a high quality silver layer. The doped silver layer can comprise silver and a doping element that has lower enthalpy of formation with oxide than that of silver, leading to better bonding with oxygen in the substrate. | 06-19-2014 |
20140170806 | TCOs for High-Efficiency Crystalline Si Heterojunction Solar Cells - Methods are used to develop and evaluate new processes for cleaning and texturing substrates and layers used in HJCS solar cells. In some embodiments, methods are used to develop and evaluate new processes for the deposition of resistive metal oxide interface layers that are formed between the TCO layers and the a-Si:H layers. The resistive metal oxide interface layers form good ohmic contact to the a-Si:H layers. In some embodiments, methods are used to develop and evaluate new processes for the deposition of amorphous TCO layers. The amorphous TCO layers allow improved control over the layer thickness and morphology. In some embodiments, methods are used to develop and evaluate new processes for the deposition of anti-reflection coating materials. The anti-reflection coating materials are selected to decrease the reflectivity of the solar cell and maintain the high conductivity of the TCO materials. | 06-19-2014 |
20140177042 | Novel silver barrier materials for low-emissivity applications - A method for making low emissivity panels, including control the composition of a barrier layer formed on a thin conductive silver layer. The barrier structure can include an alloy of a first element having high oxygen affinity with a second element having low oxygen affinity. The first element can include Ta, Nb, Zr, Hf, Mn, Y, Si, and Ti, and the second element can include Ru, Ni, Co, Mo, and W, which can have low oxygen affinity property. The alloy barrier layer can reduce optical absorption in the visible range, can provide color-neutral product, and can improve adhesion to the silver layer. | 06-26-2014 |
20140178578 | Barrier Layers for Silver Reflective Coatings and HPC Workflows for Rapid Screening of Materials for Such Barrier Layers - Provided is High Productivity Combinatorial (HPC) testing methodology of semiconductor substrates, each including multiple site isolated regions. The site isolated regions are used for testing different compositions and/or structures of barrier layers disposed over silver reflectors. The tested barrier layers may include all or at least two of nickel, chromium, titanium, and aluminum. In some embodiments, the barrier layers include oxygen. This combination allows using relative thin barrier layers (e.g., 5-30 Angstroms thick) that have high transparency yet provide sufficient protection to the silver reflector. The amount of nickel in a barrier layer may be 5-10% by weight, chromium −25-30%, titanium and aluminum −30%-35% each. The barrier layer may be co-sputtered in a reactive or inert-environment using one or more targets that include all four metals. An article may include multiple silver reflectors, each having its own barrier layer. | 06-26-2014 |
20140185034 | Method to Extend Single Wavelength Ellipsometer to Obtain Spectra of Refractive Index - Methods are provided to use data obtained from a single wavelength ellipsometer to determine the refractive index of materials as a function of wavelength for thin conductive films. The methods may be used to calculate the refractive index spectrum as a function of wavelength for thin films of metals, and conductive materials such as conductive metal nitrides or conductive metal oxides. | 07-03-2014 |
20140186598 | Base-layer consisting of two materials layer with extreme high/low index in low-e coating to improve the neutral color and transmittance performance - Low emissivity coated panels can be fabricated using a base layer having a low refractive index layer on a high refractive index layer. The low refractive index layer can have refractive index less than 1.5, and can include Mg F | 07-03-2014 |
20140261660 | TCOs for Heterojunction Solar Cells - Methods are used to develop and evaluate new materials and deposition processes for use as TCO materials in HJCS solar cells. The TCO layers allow improved control over the uniformity of the TCO conductivity and interface properties, and reduce the sensitivity to the texture of the wafer. In Some embodiments, the TCO materials include indium, zinc, tin, and aluminum. | 09-18-2014 |
20140264321 | Method of Fabricating IGZO by Sputtering in Oxidizing Gas - In some embodiments, oxidants such as ozone (O | 09-18-2014 |
20140268301 | LOW-EMISSIVITY PANELS INCLUDING MAGNETIC LAYERS - Disclosed herein are systems, methods, and apparatus for forming low emissivity panels that may include a first substrate. The first substrate may have a first side and a second side. The low emissivity panels may also include a magnetic fluid layer deposited over the first side of the first substrate and a reflective layer deposited over the second side of the first substrate. The magnetic fluid layer may include magnetic particles. The reflective layer may include a conductive material configured to conduct an electrical current and generate a magnetic field. The magnetic field may be configured to change an orientation of the magnetic particles in the magnetic fluid layer and a transmissivity of the magnetic fluid layer within a visible spectrum. The low emissivity panels may also include a first bus and a second bus deposited along opposite edges of the reflective layer and electrically connected to the reflective layer. | 09-18-2014 |
20140268316 | SYSTEMS, METHODS, AND APPARATUS FOR PRODUCTION COATINGS OF LOW-EMISSIVITY GLASS INCLUDING A TERNARY ALLOY - Disclosed herein are systems, methods, and apparatus for forming low emissivity panels that may include a substrate and a reflective layer formed over the substrate. The low emissivity panels may further include a top dielectric layer formed over the reflective layer such that the reflective layer is formed between the top dielectric layer and the substrate. The top dielectric layer may include a ternary metal oxide, such as zinc tin aluminum oxide. The top dielectric layer may also include aluminum. The concentration of aluminum may be between about 1 atomic % and 15 atomic % or between about 2 atomic % and 10 atomic %. An atomic ratio of zinc to tin in the top dielectric layer may be between about 0.67 and about 1.5 or between about 0.9 and about 1.1. | 09-18-2014 |
20140268317 | High Solar Gain Low-E Panel and Method for Forming the Same - Embodiments provided herein describe low-e panels and methods for forming low-e panels. A transparent substrate is provided. A reflective layer is formed above the transparent substrate. An over-coating layer is formed above the reflective layer. The over-coating layer includes first, second, and third sub-layers. The second sub-layer is between the first and third sub-layers, and the first and third sub-layers include the same material | 09-18-2014 |
20140272112 | Combinatorial Methods and Systems for Developing Electrochromic Materials and Devices - Embodiments provided herein describe methods and systems for evaluating electrochromic material processing conditions. A substrate having a plurality of site-isolated regions defined thereon is provided. A first electrochromic material, or a first electrochromic device stack, is formed above a first of the plurality of site-isolated regions using a first set of processing conditions. A second electrochromic material, or a second electrochromic device stack, is formed above a second of the plurality of site-isolated regions using a second set of processing conditions. The second set of processing conditions is different than the first set of processing conditions. | 09-18-2014 |
20140272290 | Polymer Anti-glare Coatings and Methods for Forming the Same - Embodiments provided herein describe anti-glare coatings and panels and methods for forming anti-glare coatings and panels. A transparent substrate is provided. A polymer is sputtered onto the transparent substrate to form an anti-glare coating on the transparent substrate. | 09-18-2014 |
20140272335 | Low-E Glazing Performance by Seed Structure Optimization - A bi-layer seed layer can exhibit good seed property for an infrared reflective layer, together with improved thermal stability. The bi-layer seed layer can include a thin zinc oxide layer having a desired crystallographic orientation for a silver infrared reflective layer disposed on a bottom layer having a desired thermal stability. The thermal stable layer can include aluminum, magnesium, or bismuth doped tin oxide (AlSnO, MgSnO, or BiSnO), which can have better thermal stability than zinc oxide but poorer lattice matching for serving as a seed layer template for silver (111). | 09-18-2014 |
20140272353 | Color shift of high LSG low emissivity coating after heat treatment - Low emissivity panels can include a protection layer of silicon nitride on a layer of ZnO on a layer of Zn | 09-18-2014 |
20140272354 | Method to generate high LSG low-emissivity coating with same color after heat treatment - Low emissivity panels can include a separation layer of Zn | 09-18-2014 |
20140272390 | Low-E Panel with Improved Barrier Layer Process Window and Method for Forming the Same - Embodiments provided herein describe low-e panels and methods for forming low-e panels. A transparent substrate is provided. A reflective layer is formed above the transparent substrate. A barrier layer is formed above the reflective layer. A nitride-containing layer is formed above the barrier layer. The nitride-containing layer has a thickness that is 1 nm or less. A over-coating layer is formed above the nitride-containing layer. The over-coating layer includes a different material than that of the nitride-containing layer. | 09-18-2014 |
20140272395 | LOW-EMISSIVITY GLASS INCLUDING SPACER LAYERS COMPATIBLE WITH HEAT TREATMENT - Disclosed herein are systems, methods, and apparatus for forming low emissivity panels that may include a first reflective layer, a second reflective layer, and a spacer layer disposed between the first reflective layer and the second reflective layer. In some embodiments, the spacer layer may have a thickness of between about 20 nm and 90 nm. The spacer layer may include a bi-metal oxide that may include tin, and may further include one of zinc, aluminum, or magnesium. The spacer layer may have a substantially amorphous structure. Moreover, the spacer layer may have a substantially uniform composition throughout the thickness of the spacer layer. The low emissivity panel may be configured to have a color change as determined by Rg ΔE (i.e. as determined on the glass side) that is less than about 1.7 in response to an application of a heat treatment to the low emissivity panel. | 09-18-2014 |
20140272454 | Barrier Layers for Silver Reflective Coatings and HPC Workflows for Rapid Screening of Materials for Such Barrier Layers - Provided is High Productivity Combinatorial (HPC) testing methodology of semiconductor substrates, each including multiple site isolated regions. The site isolated regions are used for testing different compositions and/or structures of barrier layers disposed over silver reflectors. The tested barrier layers may include all or at least two of nickel, chromium, titanium, and aluminum. In some embodiments, the barrier layers include oxygen. This combination allows using relative thin barrier layers (e.g., 5-30 Angstroms thick) that have high transparency yet provide sufficient protection to the silver reflector. The amount of nickel in a barrier layer may be 5-10% by weight, chromium—25-30%, titanium and aluminum—30%-35% each. The barrier layer may be co-sputtered in a reactive or inert-environment using one or more targets that include all four metals. An article may include multiple silver reflectors, each having its own barrier layer. | 09-18-2014 |
20140272455 | Titanium nickel niobium alloy barrier for low-emissivity coatings - A method for making low emissivity panels, including control the composition of a barrier layer formed on a thin conductive silver layer. The barrier structure can include a ternary alloy of titanium, nickel and niobium, which showed improvements in overall performance than those from binary barrier results. The percentage of titanium can be between 5 and 15 wt %. The percentage of nickel can be between 30 and 50 wt %. The percentage of niobium can be between 40 and 60 wt %. | 09-18-2014 |
20140273311 | Optical Absorbers - Optical absorbers and methods are disclosed. The methods comprise depositing a plurality of precursor layers comprising one or more of Cu, Ga, and In on a substrate, and heating the layers in a chalcogenizing atmosphere. The plurality of precursor layers can be one or more sets of layers comprising at least two layers, wherein each layer in each set of layers comprises one or more of Cu, Ga, and In exhibiting a single phase. The layers can be deposited using two or three targets selected from Ag and In containing less than 21% In by weight, Cu and Ga where the Cu and Ga target comprises less than 45% Ga by weight, Cu(In,Ga), wherein the Cu(In,Ga) target has an atomic ratio of Cu to (In+Ga) greater than 2 and an atomic ratio of Ga to (Ga+In) greater than 0.5, elemental In, elemental Cu, and In | 09-18-2014 |
20140273340 | High Productivity Combinatorial Screening for Stable Metal Oxide TFTs - Methods for HPC techniques are applied to the processing of site-isolated regions (SIR) on a substrate to form at least a portion of a TFT device used in display applications. The processing may be applied to at least one of gate electrode deposition, gate electrode patterning, gate dielectric deposition, gate dielectric patterning, metal-based semiconductor material (e.g. IGZO) deposition, metal-based semiconductor material (e.g. IGZO) patterning, etch stop deposition, etch stop patterning, source/drain deposition, source/drain patterning, passivation deposition, or passivation patterning. The SIRs may be defined during the deposition process with uniform deposition within each SIR or the SIRs may be defined subsequent to the deposition of layers wherein the layers are deposited with a gradient in one or more properties across the substrate. | 09-18-2014 |
20140273404 | Advanced Targeted Microwave Degas System - In some embodiments, methods are described that allow the processing of a substrate using microwave-based degas systems. The methods allow process variables such as power, dwell time, frequency, backside cooling gas usage, backside cooling gas flow rate, and the like to be investigated. In some embodiments, apparatus are described that allow the investigation of process variables used in microwave-based degas systems to remove adsorbed species from the surface of a substrate. The apparatus allow process variables such as power, dwell time, frequency, backside cooling gas usage, backside cooling gas flow rate, and the like to be investigated. | 09-18-2014 |
20140273407 | Formulations And Methods For Surface Cleaning And Passivation of CdTe Substrates - Methods and compositions for the surface cleaning and passivation of CdTe substrates usable in solar cells are disclosed. In some embodiments amine-containing chelators are used and in other embodiments phosphorus-containing chelators are used. | 09-18-2014 |
20140287254 | Heat Stable SnAl and SnMg Based Dielectrics - A transparent dielectric composition comprising tin, oxygen and one of aluminum or magnesium with preferably higher than 15% by weight of aluminum or magnesium offers improved thermal stability over tin oxide with respect to appearance and optical properties under high temperature processes. For example, upon a heat treatment at temperatures higher than 500 C, changes in color and index of refraction of the present transparent dielectric composition are noticeably less than those of tin oxide films of comparable thickness. The transparent dielectric composition can be used in high transmittance, low emissivity coated panels, providing thermal stability so that there are no significant changes in the coating optical and structural properties, such as visible transmission, IR reflectance, microscopic morphological properties, color appearance, and haze characteristics, of the as-coated and heated treated products. | 09-25-2014 |
20140308528 | SYSTEMS, METHODS, AND APPARATUS FOR PRODUCTION COATINGS OF LOW-EMISSIVITY GLASS - Disclosed herein are systems, methods, and apparatus for forming a low emissivity panel. In various embodiments, a partially fabricated panel may be provided. The partially fabricated panel may include a substrate, a reflective layer formed over the substrate, and a top dielectric layer formed over the reflective layer such that the reflective layer is formed between the substrate and the top dielectric layer. The top dielectric layer may include tin having an oxidation state of +4. An interface layer may be formed over the top dielectric layer. A top diffusion layer may be formed over the interface layer. The top diffusion layer may be formed in a nitrogen plasma environment. The interface layer may substantially prevent nitrogen from the nitrogen plasma environment from reaching the top dielectric layer and changing the oxidation state of tin included in the top dielectric layer. | 10-16-2014 |
20140322507 | SYSTEMS, METHODS, AND APPARATUS FOR PRODUCTION COATINGS OF LOW-EMISSIVITY GLASS - Disclosed herein are systems, methods, and apparatus for forming low emissivity panels. In some embodiments, a partially fabricated panel may be provided that includes a substrate, a reflective layer formed over the substrate, and a barrier layer formed over the reflective layer such that the reflective layer is formed between the substrate and the barrier layer. The barrier layer may include a partially oxidized alloy of three or more metals. A first interface layer may be formed over the barrier layer. A top dielectric layer may be formed over the first interface layer. The top dielectric layer may be formed using reactive sputtering in an oxygen containing environment. The first interface layer may prevent further oxidation of the partially oxidized alloy of the three or more metals when forming the top dielectric layer. A second interface layer may be formed over the top dielectric layer. | 10-30-2014 |
20150060910 | Conductive Transparent Reflector - Methods to improve the reflection of light emitting devices are disclosed. A method consistent with the present disclosure includes forming a light generating layer over a site-isolated region of a substrate. Next, forming a first transparent conductive layer over the light generating layer. Forming a low refractive index material over the first transparent conductive layer, and in time, forming a second transparent conductive layer over the low refractive index material. Subsequently, forming a reflective material layer thereon. Accordingly, methods consistent with the present disclosure may form a plurality of light emitting devices in various site-isolated regions on a substrate. | 03-05-2015 |
Phong Le, San Jose, CA US
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20130121795 | TWO SPEED CRANK ELEVATOR HAND TRUCK WITH RETRACTABLE SKATEBOARD - A hand truck with manual multiple speed elevator and attachable retractable skateboard. | 05-16-2013 |
Sang Q. Le, San Jose, CA US
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20080202425 | TEMPERATURE CONTROLLED LID ASSEMBLY FOR TUNGSTEN NITRIDE DEPOSITION - Embodiments of the invention provide apparatuses for vapor depositing tungsten-containing materials, such as metallic tungsten and tungsten nitride. In one embodiment, a processing chamber is provided which includes a lid assembly containing a lid plate, a showerhead, a mixing cavity, a distribution cavity, and a resistive heating element contained within the lid plate. In one example, the resistive heating element is configured to provide the lid plate at a temperature within a range from about 120° C. to about 180° C., preferably, from about 140° C. to about 160° C., more preferably, from about 145° C. to about 155° C. The mixing cavity may be in fluid communication with a tungsten precursor source containing tungsten hexafluoride and a nitrogen precursor source containing ammonia. In some embodiments, a single processing chamber may be used to deposit metallic tungsten and tungsten nitride materials by CVD processes. | 08-28-2008 |
20080206987 | PROCESS FOR TUNGSTEN NITRIDE DEPOSITION BY A TEMPERATURE CONTROLLED LID ASSEMBLY - Embodiments of the invention provide processes for vapor depositing tungsten-containing materials, such as metallic tungsten and tungsten nitride. In one embodiment, a method for forming a tungsten-containing material is provided which includes positioning a substrate within a processing chamber containing a lid plate, heating the lid plate to a temperature within a range from about 120° C. to about 180° C., exposing the substrate to a reducing gas during a pre-nucleation soak process, and depositing a first tungsten nucleation layer on the substrate during a first atomic layer deposition process within the processing chamber. The method further provides depositing a tungsten nitride layer on the first tungsten nucleation layer during a vapor deposition process, depositing a second tungsten nucleation layer on the tungsten nitride layer during a second atomic layer deposition process within the processing chamber, and exposing the substrate to another reducing gas during a post-nucleation soak process. | 08-28-2008 |
Sang Van Le, San Jose, CA US
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20090327855 | ANNOTATING WEBPAGE CONTENT - Among other things, a computer-implemented method for annotating webpage content includes accessing a webpage in a browser, the webpage under control of a third party. A collection of annotations stored at a storage location is retrieved, the annotations collection associated with the webpage and an annotations author. The webpage is displayed with the retrieved annotations collection overlaid on the accessed webpage. | 12-31-2009 |
Thien Le, San Jose, CA US
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20080265855 | Power regulator circuitry for programmable logic device memory elements - Power regulator circuitry for programmable memory elements on programmable logic device integrated circuits is provided. The programmable memory elements may each include a storage element formed from cross-coupled inverters and an address transistor. Address drivers may be used to supply address signals to the address transistors. The power regulator circuitry may include an address power supply circuit that produces a time-varying address power supply voltage to the address drivers and storage element power supply circuits that provide time-varying storage element power supply voltages to the cross-coupled inverters in the storage elements. Unity gain buffers may be used to distribute a reference voltage from a bandgap voltage reference to the power supply circuits. The power supply circuits may use voltage dividers and p-channel metal-oxide-semiconductor control transistors. | 10-30-2008 |
20100201332 | VOLTAGE REGULATOR CIRCUITRY WITH ADAPTIVE COMPENSATION - Voltage regulator circuitry is provided. The voltage regulator circuitry may contain a drive transistor that is controlled by the output of an operational amplifier. The drive transistor may supply a regulated voltage to a load. The operational amplifier may compare a reference voltage and a feedback signal at its inputs. The operational amplifier may include first and second stages. An adjustable resistor may be provided between the first and second stages. Control circuitry may control the resistance of the adjustable resistor based on the amount of current flowing through the load to ensure stable operation of the voltage regulator circuitry. Overshoot and undershoot detection and compensation circuitry may compensate for overshoot and undershoot in the regulated voltage. Voltage ramp control circuitry may be used to control the ramp rate of the regulated voltage. | 08-12-2010 |
20110062988 | POWER REGULATOR CIRCUITRY FOR PROGRAMMABLE LOGIC DEVICE MEMORY ELEMENTS - Power regulator circuitry for programmable memory elements on programmable logic device integrated circuits is provided. The programmable memory elements may each include a storage element formed from cross-coupled inverters and an address transistor. Address drivers may be used to supply address signals to the address transistors. The power regulator circuitry may include an address power supply circuit that produces a time-varying address power supply voltage to the address drivers and storage element power supply circuits that provide time-varying storage element power supply voltages to the cross-coupled inverters in the storage elements. Unity gain buffers may be used to distribute a reference voltage from a bandgap voltage reference to the power supply circuits. The power supply circuits may use voltage dividers and p-channel metal-oxide-semiconductor control transistors. | 03-17-2011 |
Tony Le, San Jose, CA US
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20130144166 | MOTION DETECTION USING PING-BASED AND MULTIPLE APERTURE DOPPLER ULTRASOUND - A method of full-field or “ping-based” Doppler ultrasound imaging allows for detection of Doppler signals indicating moving reflectors at any point in an imaging field without the need to pre-define range gates. In various embodiments, such whole-field Doppler imaging methods may include transmitting a Doppler ping from a transmit aperture, receiving echoes of the Doppler ping with one or more separate receive apertures, detecting Doppler signals and determining the speed of moving reflectors. In some embodiments, the system also provides the ability to determine the direction of motion by solving a set of simultaneous equations based on echo data received by multiple receive apertures. | 06-06-2013 |
Tri Le, San Jose, CA US
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20120194087 | Systems and Methods for Driving Light Emitting Diodes - System and methods are provided for driving one or more light emitting diodes (LEDs) to reduce audible noise. An example system includes a switching component, a system controller, and a current generator. The switching component is configured to receive a dimming signal with a predetermined dimming frequency and configured to switch on or off the one or more LEDs in response to the dimming signal, the predetermined dimming frequency being outside a frequency band of the audible noise. The system controller is configured to receive a feedback signal related to a LED current that flows through the one or more LEDs and configured to generate a drive signal. Additionally, the current generator is configured to receive the drive signal, to generate a charging current to store energy during a charging period and to generate the LED current during a discharging period. | 08-02-2012 |
Viet Nam Le, San Jose, CA US
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20140058266 | Ultrasound Imaging System Memory Architecture - A multiple aperture ultrasound imaging system may be configured to store raw, un-beamformed echo data. Stored echo data may be retrieved and re-beamformed using modified parameters in order to enhance the image or to reveal information that was not visible or not discernible in an original image. Raw echo data may also be transmitted over a network and beamformed by a remote device that is not physically proximate to the probe performing imaging. Such systems may allow physicians or other practitioners to manipulate echo data as though they were imaging the patient directly, even without the patient being present. Many unique diagnostic opportunities are made possible by such systems and methods. | 02-27-2014 |
Yen Le, San Jose, CA US
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20100098812 | PRODUCT AND PROCESS FOR CREATING INSTANT FLAVORED ICED BEVERAGES - The present invention is a product and method for making an instant iced coffee beverage but may be used to create any type of flavored beverage product. The method of producing an instant iced coffee beverage product comprising of providing a mixture of crushed ice, uncrushed ice, and liquid coffee in a container; a freezing step to freeze the mixture allowing the mixture to freeze into solid phase before the crushed ice substantially melts into the coffee; a sealing step to seal an opening of the container and a storing step to store the container in the freezer at or below freezing point. The product is then thawed in a microwave within a selected time frame which results in a freshly made instant iced coffee beverage. | 04-22-2010 |
Zisheng Le, San Jose, CA US
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20090195486 | SYSTEMS AND METHODS FOR COLOR CONTROL OF DISPLAY DEVICES - Various methods, systems, and apparatus for implementing aspects of color control in display devices are disclosed. One such method includes measuring an input/output profile of a display, then applying a mathematical model to the display's measured profile to generate color control tables. One such method may include tracking a first color temperature below a high-luminosity transition point and gradually transitioning to tracking a second color temperature above the high-luminosity transition point. One such method may also include gradually transitioning from tracking a darklight color temperature below a low-luminosity transition point to tracking the first color temperature above the low-luminosity transition point. Another such method may include tracking a response curve for a specified chromaticity above a low-luminosity transition point. One apparatus according to aspects of the present invention includes means for measuring an input/output profile of a display, and means for applying a mathematical model to the display's measured profile to generate color control tables. One such apparatus may include means for tracking a first color temperature below a high-luminosity transition point and for gradually transitioning to tracking a second color temperature above the high-luminosity transition point. One such apparatus may also include means for gradually transitioning from tracking a darklight color temperature below a low-luminosity transition point to tracking the first color temperature above the low-luminosity transition point. Another such apparatus may include means for tracking a response curve for a specified chromaticity above a low-luminosity transition point. | 08-06-2009 |
20100289812 | DEVICE, SYSTEM, AND METHOD FOR WIDE GAMUT COLOR SPACE SUPPORT - Methods, chips, systems, computer program products and data structures are described for conducting modification of color video signals from a first color format associated with an originating format to a second format compatible with a display media of a display device. | 11-18-2010 |
20100302439 | SYSTEM AND METHOD FOR COLOR GAMUT MAPPING - Methods and systems are described for conducting gamut mapping of color video signals from a first color gamut associated with video source to a second color gamut associated with a receiving display device. | 12-02-2010 |