Patent application number | Description | Published |
20080274301 | Method for producing patterns in a polymer layer - Polymer sites are formed on a support. These sites are subjected to a plasma deposition of dielectric material and preferably react with this plasma so as to form openings at the level of said sites. A pattern structure is then formed in the dielectric material and/or in the polymer. | 11-06-2008 |
20090087961 | Process for fabricating semiconductor structures useful for the production of semiconductor-on-insulator substrates, and its applications - The invention relates to a process for fabricating a semiconductor structure, which comprises:
| 04-02-2009 |
20090243048 | METALLIC NANOCRYSTAL ENCAPSULATION - A method of forming a device includes forming protective shells about metallic nanocrystals supported by a substrate. The metallic nanocrystals having protective shells are encapsulated with a layer formed with process parameters that are not compatible with the integrity of unprotected metallic nanocrystals. | 10-01-2009 |
20090246510 | METALLIC NANOCRYSTAL PATTERNING - A device and method include forming a mask on a substrate supporting a plurality of metallic nanocrystals such that a portion of the metallic nanocrystals is exposed. Protective shells are formed about the exposed metallic nanocrystals. Unprotected metallic nanocrystals are removed. | 10-01-2009 |
20100258524 | METHOD OF DEPOSITING LOCALIZED COATINGS - A method of depositing a non-continuous coating of a first material on a substrate, comprising: a) the formation of a mask on this substrate, by forming at least two mask layers, and etching of at least one cavity in these layers, this cavity having an outline such that a coating, deposited on the substrate, through the cavities of the mask, has at least one discontinuity over said outline of the cavity; b) the deposition of the first material on the substrate, through the cavities of the mask, the coating thus deposited having at least one discontinuity over the outline of said cavity; and c) the mask is removed. | 10-14-2010 |
20100310839 | OBJECT PROVIDED WITH A GRAPHIC ELEMENT TRANSFERRED ON A SUPPORT AND METHOD FOR MAKING SUCH AN OBJECT - An object including at least one graphic element, including at least one at least partly transparent substrate, at least one face of which includes recesses forming a pattern of the graphic element filled with the at least one material, the face of the substrate being fixed to at least one face of at least one support by wafer bonding, the substrate and the support forming a monolithic structure. | 12-09-2010 |
20110018132 | OBJECT INCLUDING A GRAPHIC ELEMENT TRANSFERRED ON A SUPPORT AND METHOD FOR MAKING SUCH AN OBJECT - An object including at least one graphic element, including at least one layer including at least one metal and etched according to a pattern of the graphic element, a first face of the layer being positioned opposite a face of at least one at least partly transparent substrate, a second face, opposite to the first face, of the layer being covered with at least one passivation layer fixed to at least one face of at least one support by wafer bonding and forming with the support a monolithic structure, and the layer including at least at the second face, at least one area including the metal and at least one semiconductor. | 01-27-2011 |
20110033976 | SELF-ASSEMBLY OF CHIPS ON A SUBSTRATE - A method of forming, on a surface of a substrate, at least one hydrophilic attachment area for the purpose of self-assembling a component or a chip, in which a hydrophobic area, which delimits the hydrophilic attachment area, is produced. | 02-10-2011 |
20130153093 | TREATMENT, BEFORE THE BONDING OF A MIXED CU-OXIDE SURFACE, BY A PLASMA CONTAINING NITROGEN AND HYDROGEN - A method for bonding a first surface provided with at least one copper area surrounded by a silicon oxide area to a second surface includes an operation of treatment of the first surface by a plasma, before placing the first surface in contact with the second surface. The plasma is formed from a gas source containing a silicon oxide nitriding agent and a copper oxide reducing agent containing hydrogen. The gas source may include an N | 06-20-2013 |
20130217207 | METHOD FOR DIRECTLY ADHERING TWO PLATES TOGETHER, INCLUDING A STEP OF FORMING A TEMPORARY PROTECTIVE NITROGEN LAYER - To avoid problems of hydrolysis of the silicon oxide formed by PECVD at the surface of at least one wafer, it is proposed to cover, in the vacuum deposition chamber used to deposit the silicon oxide, said oxide with a temporary protective layer containing nitrogen. The protective layer thus protects the silicon oxide against the outer environment and especially against humidity when the wafer provided with the silicon oxide is stored outside of the vacuum deposition chamber. Afterwards, the protective layer is removed, for example, by chemical-mechanical. polishing, just before the two wafers are placed into contact. The protective layer may be formed by a PECVD silicon nitride deposition, by plasma nitriding or nitrogen doping of a superficial portion of the silicon oxide. | 08-22-2013 |
20130243942 | PROCESS FOR MAKING A STRUCTURE WITH HERMETICALLY CLOSED CAVITY UNDER CONTROLLED ATMOSPHERE - A process for making an encapsulation structure comprising the following steps:
| 09-19-2013 |
20140179089 | Process for Producing at Least One Silicon-Based Nanoelement in a Silicon Oxide Section and Process for the Manufacture of a Device Employing the Production Process - The process for the production of at least one silicon-based nanoelement ( | 06-26-2014 |
20140342528 | METHOD FOR THE DIRECT BONDING OF A SILICON OXIDE LAYER - A direct bonding method between at least a first layer ( | 11-20-2014 |