Patent application number | Description | Published |
20100214811 | CODING TECHNIQUES FOR IMPROVING THE SENSE MARGIN IN CONTENT ADDRESSABLE MEMORIES - A content addressable memory using encoded data words and search words, and techniques for operating such device. In one embodiment, the data word is transformed into a code word guaranteeing a mismatch of at least two code word bits of different binary values during the memory search operation when the data word does not match a search word. In another embodiment, the search word is transformed into a search code such that the Hamming distance between the code word and the search code is greater than a given threshold when there is a mismatch of at least one bit between the data word and the search word. | 08-26-2010 |
20100214830 | MEMORY READING METHOD FOR RESISTANCE DRIFT MITIGATION - Techniques for reading phase change memory that mitigate resistance drift. One contemplated method includes apply a plurality of electrical input signals to the memory cell. The method includes measuring a plurality of electrical output signals from the memory cell resulting from the plurality of electrical input signals. The method includes calculating an invariant component of the plurality of electrical output signals dependent on the configuration of amorphous material in the memory cell. The method also includes determining a memory state of the memory cell based on the invariant component. In one embodiment of the invention, the method further includes mapping the plurality of electrical output signals to a measurements region of a plurality of measurements regions. The measurements regions correspond to memory states of the memory cell. | 08-26-2010 |
20110096594 | MEMORY READING METHOD FOR RESISTANCE DRIFT MITIGATION - Techniques for reading phase change memory that mitigate resistance drift. One contemplated method includes apply a plurality of electrical input signals to the memory cell. The method includes measuring a plurality of electrical output signals from the memory cell resulting from the plurality of electrical input signals. The method includes calculating an invariant component of the plurality of electrical output signals dependent on the configuration of amorphous material in the memory cell. The method also includes determining a memory state of the memory cell based on the invariant component. In one embodiment of the invention, the method further includes mapping the plurality of electrical output signals to a measurements region of a plurality of measurements regions. The measurements regions correspond to memory states of the memory cell. | 04-28-2011 |
20130339570 | VARIABILITY AWARE WEAR LEVELING - Techniques are presented that include determining, for data to be written to a nonvolatile memory, a location in the nonvolatile memory to which the data should be written based at least on one or more wear metrics corresponding to the location. The one or more wear metrics are based on measurements of the location. The measurements estimate physical wear of the location. The techniques further include writing the data to the determined location in the nonvolatile memory. The techniques may be performed by methods, apparatus (e.g., a memory controller), and computer program products. | 12-19-2013 |
20130339574 | VARIABILITY AWARE WEAR LEVELING - Techniques are presented that include determining, for data to be written to a nonvolatile memory, a location in the nonvolatile memory to which the data should be written based at least on one or more wear metrics corresponding to the location. The one or more wear metrics are based on measurements of the location. The measurements estimate physical wear of the location. The techniques further include writing the data to the determined location in the nonvolatile memory. The techniques may be performed by methods, apparatus (e.g., a memory controller), and computer program products. | 12-19-2013 |
20140043927 | METHOD FOR OPTIMIZING REFRESH RATE FOR DRAM - A method for determining an optimized refresh rate involves testing a refresh rate on rows of cells, determining an error rate of the rows, evaluating the error rate of the rows; and repeating these steps for a decreased refresh rate until the error rate is greater than a constraint, at which point a slow refresh rate is set. | 02-13-2014 |
20140063997 | DRAM REFRESH - A refresh of a DRAM having at least a fast and a slow refresh rate includes encoding a pointer on a row or rows with refresh information, reading the refresh information, and incrementing a fast refresh address counter with the refresh information. The refresh may be performed by encoding one or more cells on a row that may require a fast refresh, one or more cells on a group of rows that may require a fast refresh, or one or more cells on a row that may not require a fast refresh. | 03-06-2014 |
20140281725 | DETECTION OF MEMORY CELLS THAT ARE STUCK IN A PHYSICAL STATE - A method for detecting memory cells that are stuck in a physical state. The method includes performing a diagnostic read of a memory cell in a memory system. The memory system is configured to utilize at least one read threshold value to determine a read data value stored in the memory cell when performing a data read operation on the memory cell. Performing the diagnostic read includes: comparing a measurement property of the memory cell to at least one diagnostic threshold value, where at least one of the diagnostic threshold values is different from all of the read threshold values; and identifying the memory cell as being stuck in a physical state based on the comparing. Based on identifying the memory cell as being stuck in a physical state, an indication that memory cell is stuck is output along with a diagnostic data value associated with the physical state. | 09-18-2014 |
20140310570 | STALE DATA DETECTION IN MARKED CHANNEL FOR SCRUB - Embodiments relate to stale data detection in a marked channel for a scrub. An aspect includes bringing the marked channel online, wherein the computer comprises a plurality of memory channels comprising the marked channel and a remaining plurality of unmarked channels. Another aspect includes performing a scrub read of an address in the plurality of memory channels. Another aspect includes determining whether data returned by the scrub read from the marked channel is valid or stale based on data returned from the unmarked channels by the scrub read. Another aspect includes based on determining that the data returned by the scrub read from the marked channel is valid, not performing a scrub writeback to the marked channel. Another aspect includes based on determining that the data returned by the scrub read from the marked channel is stale, performing a scrub writeback of corrected data to the marked channel. | 10-16-2014 |
20150019905 | STALE DATA DETECTION IN MARKED CHANNEL FOR SCRUB - Embodiments relate to stale data detection in a marked channel for a scrub. An aspect includes bringing the marked channel online, wherein the computer comprises a plurality of memory channels comprising the marked channel and a remaining plurality of unmarked channels. Another aspect includes performing a scrub read of an address in the plurality of memory channels. Another aspect includes determining whether data returned by the scrub read from the marked channel is valid or stale based on data returned from the unmarked channels by the scrub read. Another aspect includes based on determining that the data returned by the scrub read from the marked channel is valid, not performing a scrub writeback to the marked channel. Another aspect includes based on determining that the data returned by the scrub read from the marked channel is stale, performing a scrub writeback of corrected data to the marked channel. | 01-15-2015 |