Langdon
Alan George Langdon, Hamilton NZ
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20140027307 | ELECTROLYTIC CELL - The present invention relates to an electrolytic cell, including: at least two electrodes, each electrode including: a first and a second surface; and a number of perforations arranged in a substantially uniform pattern; wherein the electrodes are positioned relative to each other such that: at least one surface of each electrode is opposed to a surface of the other electrode, and a gap is formed between the opposed surfaces of the electrodes; wherein the cell includes at least one electrically insulating layer positioned on the opposing surface of at least one electrode, the insulating layer including a number of perforations aligning with the perforations of the electrode on which it is positioned. | 01-30-2014 |
Peter David Langdon, Cranbourne South AU
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20140013686 | PANEL MEMBER - A panel member ( | 01-16-2014 |
Rebecca Langdon, Brighouse GB
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20120156723 | PROTEIN GLYCOSYLATION - The disclosure relates to an oligosaccharyltransferase polypeptide and the production of glycosylated recombinant protein in a microbial host cell; and including vaccines comprising glycosylated recombinant antigens. | 06-21-2012 |
Roger Martin Langdon, Essex GB
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20090284826 | Acousto-Optic Devices - An acousto-optic module is provided, including a number of partially coupled optical resonators distributed within a dielectric medium and at least one acoustic transducer mounted on a surface of the dielectric medium for injecting an acoustic wave into the optical resonators so as to diffract light passing therethrough by means of Bragg diffraction. This acousto-optic module has been applied in particular to an improved tuneable optical filter in which an acoustic shear wave is generated and which travels through the acousto-optic module in a direction substantially parallel with a polarised light signal passing therethrough. The acousto-optic module is also applied to an improved optical frequency shifter. | 11-19-2009 |
20100171944 | Gas Velocity Sensor - A method and apparatus for determining gas velocity, which includes generating transmitted radiation having an expected transmission frequency, detecting backscattered radiation, and determining gas velocity in dependence upon any Doppler shift of the frequency of the backscattered radiation, determining a transmission frequency of the transmitted radiation; detecting any difference between the measured transmission frequency and the expected transmission frequency and generating a feedback signal therefrom, and determining gas velocity using said feedback signal. | 07-08-2010 |
Simon Langdon, Victoria AU
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20110102580 | SPATIAL PREDICTIVE APPROXIMATION AND RADIAL CONVOLUTION - The present invention provides a method for approximating the location of a point of interest relative to a three dimensional coordinate system, the method including the steps of: orientating a camera toward the point of interest such that the point of interest can be seen within a camera view; retrieving camera data including a location relative to the three dimensional coordinate system, and a camera position including a camera heading and a camera tilt; querying an associated topographic map database to identify one or more coordinates located on the topographic map along the camera heading to form a first dataset; computing one or more coordinates located on a radial plane between the camera and the point of interest based on the camera heading and camera tilt to form a second dataset; and comparing the first dataset with the second dataset to identify a pair of matching coordinates; wherein the matching coordinates represent the three dimensional coordinate location of the point of interest. A system and software for performing the method is also provided. | 05-05-2011 |
Steve Langdon, Dresden DE
Steven Langdon, Dresden DE
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20120153399 | Low-Diffusion Drain and Source Regions in CMOS Transistors for Low Power/High Performance Applications - The drain and source regions may at least be partially formed by in situ doped epitaxially grown semiconductor materials for complementary transistors in sophisticated semiconductor devices designed for low power and high performance applications. To this end, cavities may be refilled with in situ doped semiconductor material, which in some illustrative embodiments also provides a desired strain in the channel regions of the complementary transistors. | 06-21-2012 |
20120193708 | Drive Current Increase in Field Effect Transistors by Asymmetric Concentration Profile of Alloy Species of a Channel Semiconductor Alloy - When forming sophisticated transistors, the channel region may be provided such that the gradient of the band gap energy of the channel material may result in superior charge carrier velocity. For example, a gradient in concentration of germanium, carbon and the like may be implemented along the channel length direction, thereby obtaining higher transistor performance. | 08-02-2012 |
20130029464 | METHODS FOR FABRICATING INTEGRATED CIRCUITS USING NON-OXIDIZING RESIST REMOVAL - Methods are provided for fabricating integrated circuits using non-oxidizing resist removal. In accordance with one embodiment the method includes forming a gate electrode structure overlying a semiconductor substrate and applying and patterning a layer of resist to expose a portion of the semiconductor substrate adjacent the gate electrode structure. Conductivity determining ions are implanted into the semiconductor substrate using the gate electrode structure and the layer of resist as an implant mask. The layer of resist is removed in a non-oxidizing ambient and the implanted conductivity determining ions are activated by thermal annealing. | 01-31-2013 |