Landis
Christian Landis, Hombrechtikon CH
Patent application number | Description | Published |
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20130305822 | SENSING DEVICE - The present sensing device comprises a sensor ( | 11-21-2013 |
Klaus Landis, Heroldsberg DE
Patent application number | Description | Published |
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20100217320 | VERTEBRAL IMPLANT MADE FROM BONE MATERIAL FOR RELIEF OF A NARROWED VERTEBRAL CHANNEL - The invention relates to an implant for relief of a narrowed vertebral channel in a spinal column, with a spacer for application between the spinous processes of two adjacent vertebral bodies and two fixing elements arranged to the left and right of the spinous processes in the implanted state. The implant is made from bony material and is formed from at least two pieces, one piece having a sleeve section formed in one piece with one fixing element the other piece having a plug section formed in one piece with the other fixing element, both sections being able to be connected to each other in the form of a plug connection, the sleeve section and/or the plug section being part of the spacer or a part thereof. | 08-26-2010 |
Shay Landis, Ramat Gan IL
Patent application number | Description | Published |
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20130205075 | NONVOLATILE MEMORY DEVICE AND MEMORY CARD INCLUDING THE SAME - There is provided a nonvolatile memory device including a memory cell array including nonvolatile memory cells, a battery not supplied with external power and configured to store a charged voltage, a sensing unit configured to sense a degradation state of the nonvolatile memory cells of the memory cell array, and a trigger circuit configured to transmit a refresh trigger signal based on the sensing result, wherein the nonvolatile memory cells of the memory cell array are refreshed using the charged voltage provided by the battery in response to the trigger signal transmitted from the trigger circuit. | 08-08-2013 |
20130322175 | METHOD OF REPROGRAMMING NONVOLATILE MEMORY COMPRISING MARKING SOME CELLS AS BLANKS - A method of operating a memory device comprises programming a first data signal to a first memory cell, attempting to program a second data signal to the first memory cell in a state where the first memory cell is not erased, and marking the first memory cell as blank upon failing to program the second data signal to the first memory cell. | 12-05-2013 |