Patent application number | Description | Published |
20130250689 | SELECTED WORD LINE DEPENDENT SELECT GATE DIFFUSION REGION VOLTAGE DURING PROGRAMMING - Methods and devices for operating non-volatile storage are disclosed. One or more programming conditions depend on the location of the word line that is selected for programming. Applying a selected word line dependent program condition may reduce or eliminate program disturb. The voltage applied to a common source line may depend on the location of the word line that is selected for programming. This may prevent or reduce punch-through conduction, which may prevent or reduce program disturb. The voltage applied to bit lines of unselected NAND strings may depend on the location of the word line that is selected for programming. This may prevent or reduce punch-through conduction. | 09-26-2013 |
20130250690 | SELECTED WORD LINE DEPENDENT SELECT GATE VOLTAGE DURING PROGRAM - Methods and devices for operating non-volatile storage are disclosed. One or more programming conditions depend on the location of the word line that is selected for programming, which may reduce or eliminate program disturb. The voltage applied to the gate of a select transistor of a NAND string may depend on the location of the selected word line. This could be either a source side or drain side select transistor. This may prevent or reduce program disturb that could result due to DIBL. This may also prevent or reduce program disturb that could result due to GIDL. A negative bias may be applied to the gate of a source side select transistor when programming at least some of the word lines. In one embodiment, progressively lower voltages are used for the gate of the drain side select transistor when programming progressively higher word lines. | 09-26-2013 |
20140160848 | SELECT GATE BIAS DURING PROGRAM OF NON-VOLATILE STORAGE - Techniques disclosed herein may prevent program disturb by preventing a select transistor of an unselected NAND string from unintentionally turning on. The Vgs of a select transistor of a NAND string may be lowered from one programming pulse to the next programming pulse multiple times. The select transistor may be a drain side select transistor or a source side select transistor. Progressively lowering the Vgs of the select transistor of an unselected NAND string as programming progresses may prevent the select transistor from unintentionally turning on. Therefore, program disturb is prevented or reduced. Vgs may be lowered by applying a lower voltage to a select line associated with the select transistor. Vgs may be lowered by applying a higher voltage to bit lines associated with the unselected NAND strings as programming progresses. Vgs may be lowered by applying a higher voltage to a common source line as programming progresses. | 06-12-2014 |
20140247666 | DYNAMIC ERASE DEPTH FOR IMPROVED ENDURANCE OF NON-VOLATILE MEMORY - Improving endurance for non-volatile memory by dynamic erase depth is disclosed. A group of memory cells are erased. Then, at least some of the erased memory cells are programmed. Programming the memory cells typically impacts the erase threshold distribution of those memory cells that were intended to stay erased. The erase depth of the next erase can be adjusted based on how the program operation affects the erase threshold distribution. As one example, the upper tail of the erase distribution is measured after programming. The higher the upper tail, the shallower the next erase, in one embodiment. This helps to improve endurance. In one embodiment, the erase depth is adjusted by determining a suitable erase verify level. Rather than (or in addition to) adjusting the erase verify level, the number of erase pulses that are performed after erase verify passes can be adjusted to adjust the erase depth. | 09-04-2014 |
20140247667 | PARTITIONED ERASE AND ERASE VERIFICATION IN NON-VOLATILE MEMORY - A set of memory cells can be erased by individually erasing portions of the set in order to normalize the erase behavior of each memory cell and provide more consistent erase rates. An erase voltage pulse can be applied to the set of memory cells with a first group of cells biased for erase and a second group biased to inhibit erase. The erase depth is made shallower as the device is cycled more. | 09-04-2014 |
Patent application number | Description | Published |
20080302411 | Paste Composition and Solar Cell Element Using the Same - Provided are a paste composition making it possible to improve the adhesive property of a backside electrode and restrain an aluminum electrode layer from exfoliating, and a solar cell element having an electrode formed by use of this composition. The paste composition is a paste composition for forming an electrode ( | 12-11-2008 |
20100180948 | PASTE COMPOSITION AND SOLAR CELL ELEMENT - Provided are a paste composition which is capable of sufficiently achieving at least a BSF effect equivalent to or greater than a conventionally achieved BSF effect even when the paste composition is used in either case where a thick back surface electrode layer is formed on a thick silicon semiconductor substrate or where a thin back surface electrode layer is formed on a thin silicon semiconductor substrate and which is capable of not only achieving the BSF effect equivalent to or greater than the conventionally achieved BSF effect but also suppressing a deformation of the silicon semiconductor substrate after being fired when the paste composition is used in the case where the thin back surface electrode layer is formed on the thin silicon semiconductor substrate; and a solar cell element comprising an electrode formed by using the above-mentioned paste composition. The paste composition comprises aluminum powder as electrically conductive powder, and a total content of iron and titanium contained therein as inevitable impurity elements is less than or equal to 0.07% by mass. The solar cell element comprises a back surface electrode ( | 07-22-2010 |
20110195244 | RESIN-COATED METALLIC PIGMENT, WATER BASE PAINT CONTAINING THE SAME, COATED PRODUCT TO WHICH WATER BASE PAINT HAS BEEN APPLIED, AND METHOD OF MANUFACTURING RESIN-COATED METALLIC PIGMENT - The present invention relates to a resin-coated metallic pigment in which a coating layer constituted of a single layer or a plurality of layers is formed on a surface of a base particle, an outermost layer of the coating layer being composed of a resin which is a polymer containing one or more compound selected from a monomer and an oligomer having two or more polymeric double bonds as constituent unit, and a surface portion of the outermost layer being treated with a surface modifier which is a compound having one polymeric double bond. | 08-11-2011 |
20120009416 | INFRARED REFLECTION METHOD - An infrared reflection method includes the steps of: preparing an object to be coated; and applying a coloring composition containing an infrared reflective pigment to the object to obtain a black coated object, the infrared reflective pigment having a structure including a metallic substrate, a metal oxide interference layer covering a surface of the metallic substrate, and metallic particles partially covering a surface of the metal oxide interference layer. | 01-12-2012 |
20120064291 | ELECTRICALLY CONDUCTIVE PASTE COMPOSITION AND ELECTRICALLY CONDUCTIVE FILM FORMED BY USING THE SAME - Provided are an electrically conductive paste composition capable of easily and inexpensively forming, on a variety of substrates or in electronic devices, an electrically conductive film such as electrodes and wires excellent in electrical conductivity, surface smoothness properties, and properties of adhesion with a base material; and an electrically conductive film formed by using the above-mentioned electrically conductive paste composition. The electrically conductive paste composition includes flaky aluminum particles as an electrically conductive powder, an average thickness of the flaky aluminum particles is less than or equal to 0.8 μm, and a ratio of an oxygen content to a unit surface area of the flaky aluminum particles is less than or equal to 15 mg/m | 03-15-2012 |
20120129998 | METAL PIGMENT, METHOD FOR PRODUCING THE SAME, AND WATER BASE METALLIC RESIN COMPOSITION INCLUDING THE SAME - The metal pigment of the present invention has a structure in which an organic carboxylic acid metal salt is adhered onto metal particles, and may also have a structure in which a first compound is adhered onto the metal particles, and the organic carboxylic acid metal salt is adhered onto the first compound. | 05-24-2012 |