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| 20090068518 | PASSIVE FUEL CELL SYSTEM - A passive fuel cell system including at least one cell unit, an anode fuel supplying unit, a cathode fuel supplying unit, and a heat-conductive material layer is provided. The cell unit includes a cathode current collector, an anode current collector, and a membrane electrode assembly disposed between them. The anode fuel supplying unit is disposed on a side of the anode current collector, and the cathode fuel supplying unit is disposed on a side of the cathode current collector. The heat-conductive material layer is disposed between the cathode current collector and the cathode fuel supplying unit and/or between the anode current collector and the anode fuel supplying unit. And, a portion of the heat-conductive material layer extends to the outside of a cell system reaction area defined by the cell unit, the anode fuel supplying unit, and the cathode fuel supplying unit along a direction parallel to the cell unit. | 03-12-2009 |
| 20090134879 | METHOD OF MEASURING CONCENTRATION OF FUEL - A method of measuring concentration of a fuel is provided. First, a fuel cell unit having at least an anode, a cathode, and a membrane electrode assembly (MEA) is provided. Next, a fuel is supplied to the anode, while a reactive gas is supplied to the cathode. Then, the amount of the reactive gas supplied to the cathode is adjusted and the concentration of the fuel is estimated in accordance with the consumption rate of the reactive gas in the fuel cell unit. | 05-28-2009 |
| 20090136792 | METHOD OF MEASURING CONCENTRATION OF FUEL - A method of measuring concentration of a fuel is provided. First, a fuel cell unit having at least an anode, a cathode, and a membrane electrode assembly (MEA) is provided. Next, a fuel is supplied to the anode, while a reactive gas is supplied to the cathode. Then, the amount of the reactive gas supplied to the cathode is adjusted and the concentration of the fuel is estimated in accordance with the consumption rate of the reactive gas in the fuel cell unit, wherein a method of estimating the concentration of the fuel in accordance with a consumption rate of the reactive gas in the cathode includes measuring a concentration of the reactive gas supplied to the cathode and estimating the concentration of the fuel in accordance with a relationship between the concentration of the reactive gas supplied to the cathode and time. | 05-28-2009 |
| 20100055515 | FUEL SUPPLY CONTROL METHOD AND SYSTEM FOR FUEL CELLS - An embodiment of the invention provides a fuel supply control system to control a fuel cell system to work in a predetermined temperature range by controlling a fuel supply rate. The fuel supply control system includes a fuel supply controller and a fuel supply device. The fuel supply controller calculates a temperature variation slope to generate a first fuel supply rate by increasing or decreasing the predetermined fuel supply rate according to the relationship of system temperature and predetermined working temperature, and controls a fuel delivering rate of the fuel supply device according to the first fuel supply rate. | 03-04-2010 |
| 20100068584 | FLAT FUEL CELL ASSEMBLY - A flat fuel cell assembly including a MEA, a cathode porous current collector, an anode porous current collector, a gas barrier material layer, a case, and at least one air baffle is provided. The cathode porous current collector and the anode porous current collector are disposed at two opposite sides of the MEA. The gas barrier material layer is disposed at a side of the cathode porous current collector and has at least one opening for exposing a surface of the cathode porous current collector. The case is disposed at a side of the MEA, the gas barrier material layer is disposed between the case and the MEA, and an air channel is located between the gas barrier material layer and the case. Additionally, the air baffle disposed within the air channel. | 03-18-2010 |
| 20100136697 | APPARATUS AND METHOD OF MEASURING CONCENTRATION OF FUEL - An apparatus of measuring concentration of fuel including a catalyst layer, a diffusion layer, a fuel chamber, a reactive gas chamber, and a sensor is provided. The diffusion layer is connected to the catalyst layer. The fuel chamber is suitable for containing a fuel. The diffusion layer is between the fuel chamber and the catalyst layer. The reactive gas chamber is suitable for containing a reactive gas. The catalyst layer is between the reactive gas chamber and the diffusion layer. The fuel diffuses to the catalyst layer via the diffusion layer such that a combustion reaction of the fuel and the reactive gas is conducted in the catalyst layer to consume the reactive gas and generate a gaseous product. The sensor is disposed on the reactive gas chamber for measuring the concentration of the reactive gas or the concentration of the gaseous product in the reactive gas chamber. | 06-03-2010 |
| 20100159299 | PASSIVE FUEL CELL ASSEMBLY - A passive fuel cell assembly including a membrane electrode assembly, an anode current collector, a cathode current collector, a hydrophilic and gas-impermeable layer, and a gas-liquid separation layer is provided. The anode current collector and the cathode current collector are disposed at two opposite sides of the membrane electrode assembly. The hydrophilic and gas-impermeable layer is disposed on the anode current collector. The gas-liquid separation layer is disposed on the hydrophilic and gas-impermeable layer, such that the hydrophilic and gas-impermeable layer is disposed between the gas-liquid separation layer and the anode current collector. | 06-24-2010 |
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| 20110206052 | DATA TRANSFER SYSTEM ENABLING ACCESS TO MULTIPLE SUBNETS AND METHOD THEREOF - A data transfer system enabling access to multiple subnets and method thereof is disclosed. The data transfer method includes the following steps: executing a virtual private network (VPN) client installed on an electronic system; connecting the VPN client to a VPN router; the VPN client assigning a virtual IP address to a virtual interface; and the VPN client accessing a subnet corresponding to the virtual IP address through the virtual IP address. | 08-25-2011 |
| 20120020215 | WIRELESS NETWORK SYSTEM AND WIRELESS ACCESS POINT DEVICE THEREOF - A wireless network system and a wireless access point (AP) device thereof are provided. The wireless network system includes at least a wireless AP device and a plurality of wireless terminal devices. Each wireless AP device maintains a load list including load states of all wireless AP devices in the same area, and ranks load states of all wireless AP devices in the load list at least according to central processing unit utilization rates of the wireless AP devices. When a wireless terminal device transmits a connection request to one wireless AP device, the wireless AP determines whether it being in a low load state, and decides, depending upon whether it being in the low load state, to accept the connection request or to notify one or a plurality of wireless AP devices being in the low load states in the same area to accept the connection request. | 01-26-2012 |
| 20120020339 | WIRELESS NETWORK SYSTEM AND WIRELESS ACCESS POINT DEVICE AND WIRELESS TERMINAL DEVICE THEREOF - A wireless network system and a wireless access point (AP) device and a wireless terminal device thereof are provided. The wireless network system includes at least a wireless AP device and at least a wireless terminal device. Each wireless AP device broadcasts a beacon including a load state content of the wireless AP device. Each wireless terminal device receives beacons of all wireless AP devices, and ranks load states of all wireless AP devices in a load list according to at least CPU utilization rates in the load state contents of all wireless AP devices respectively. When a wireless terminal device intends to establish a connection with one of the wireless AP devices, the wireless terminal devices searches through the load list to select a wireless AP device being in a low load state, and transmits a connection request message to the selected wireless AP device. | 01-26-2012 |
| 20120023325 | VIRTUAL PRIVATE NETWORK SYSTEM AND NETWORK DEVICE THEREOF - A virtual private network (VPN) system and a network device thereof are provided. The VPN system includes a first network device, a second network device, and an authentication server. The first network device provides an encrypted connection setup request message containing an authentication information to the second network device. The second network device receives the encrypted connection setup request message and forwards the authentication information to the authentication server to perform a first authentication process, so as to determine whether the first network device is authorized. If the first network device is authorized, the first network device and the second network device directly exchange a set of VPN arguments and perform a second authentication process through the exchange of the VPN arguments, so as to establish an IPSec VPN connection between the first network device and the second network device. | 01-26-2012 |
| 20120092186 | WIRELESS COMMUNICATION DEVICE - A wireless communication device adapted for transmitting and receiving information in a wireless access in vehicular environment (WAVE) is proposed. The wireless communication device includes a WAVE module. The WAVE module broadcasts a WAVE announcement frame as a beacon, where the beacon includes a WAVE service information element (WSIE), and the WSIE includes at least record information such as a vehicle number of a vehicle, in which the wireless communication device is located. Another wireless communication device is proposed, which exchanges respective record information with the neighboring vehicle(s) via a connection established between the wireless communication device and the neighboring vehicle(s) after at least a WAVE announcement frame of the neighboring vehicle(s) is received. | 04-19-2012 |
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| 20110258495 | METHODS OF CALCULATING COMPENSATION VOLTAGE AND ADJUSTING THRESHOLD VOLTAGE AND MEMORY APPARATUS AND CONTROLLER - Methods of calculating a compensation voltage and adjusting a threshold voltage, a memory apparatus, and a controller are provided. In the present invention, data is written into a rewritable non-volatility memory, and the data is then read from the rewritable non-volatility memory and compared with the previously written data to obtain error bit information. The compensation voltage of the threshold voltage is calculated according to the error bit information, and the threshold voltage is adjusted according to the compensation voltage. | 10-20-2011 |
| 20110258496 | DATA READING METHOD, MEMORY STORAGE APPARATUS AND MEMORY CONTROLLER THEREOF - A data reading method for a writable non-volatile memory module having physical pages is provided. The method includes grouping the physical pages into a plurality of physical page groups. The method also includes reading first data from a physical page of a first physical page group by applying a first threshold voltage set. The method still includes, when the first data can be corrected by an error checking and correcting circuit and an error bit number corresponding to the first data is not smaller than an error bit number threshold, calculating compensation voltages for the first threshold voltage set. The method further includes adjusting the first threshold voltage set by the compensation voltages and applying the adjusted first threshold voltage set to read data from the physical pages of the first physical page group. Accordingly, data stored in the rewritable non-volatile memory module can be correctly read. | 10-20-2011 |
| 20110317488 | DATA READING METHOD AND CONTROL CIRCUIT AND MEMORY CONTROLLER USING THE SAME - A data reading method for a flash memory module is provided. The method includes applying a bit-data-read voltage to get read data from memory cells of the flash memory module. The method also includes setting a minus-adjustment-bit-data-read voltage and a plus-adjustment-bit-data-read voltage corresponding to the bit-data-read voltage based on an error-distribution estimated value and applying the minus-adjustment-bit-data-read voltage and the plus-adjustment-bit-data-read voltage to obtain soft values corresponding to the read data from the memory cells. The method further includes calculating a soft-information estimated value corresponding to each bit of the read data according to the soft-values. Accordingly, the method can effectively obtain soft information. | 12-29-2011 |
| 20120072805 | MEMORY STORAGE DEVICE, MEMORY CONTROLLER THEREOF, AND METHOD THEREOF FOR GENERATING LOG LIKELIHOOD RATIO - A memory storage device, a memory controller, and a log likelihood ratio (LLR) generation method are provided. A read data corresponding to a first storage state is obtained from memory cells of a flash memory chip in the memory storage device by using bit data read voltages. An error checking and correcting procedure is performed on the read data to obtain a second storage state corresponding to the read data when the read data is written. An amount of storage error is obtained in storage states satisfying a statistic number, and a storage error means that data is in the second storage state when being written and is in the first storage state when being read. A logarithmic operation is executed according to the statistic number, an amount of the storage states, and the amount of storage error to generate a first LLR of the read data. | 03-22-2012 |
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| 20080296701 | ONE-TIME PROGRAMMABLE READ-ONLY MEMORY - A one-time programmable read-only memory (OTP-ROM) including a substrate, a first doped region, a second doped region, a gate dielectric layer, a first gate and a second gate. The substrate is of a first conductive type. The first doped region and the second doped region are of a second conductive type and are separately disposed in the substrate. The gate dielectric layer is disposed on the substrate between the first doped region and the second doped region. The first gate and the second gate are disposed on the gate dielectric layer, respectively. The first gate is adjacent to the first doped region, while the second gate is adjacent to the second doped region. Here, the first gate is electrically coupled grounded, and the OTP-ROM is programmed through a breakdown effect. | 12-04-2008 |
| 20100002344 | HIGH VOLTAGE TOLERANCE CIRCUIT - A high voltage tolerance circuit includes a first transistor, a second transistor, a third transistor, and a latch-up device. The first transistor and the second transistor are controlled by a control signal. The gate of the third transistor is coupled to a ground through the first transistor. The gate of the third transistor is coupled to an I/O pad through the second transistor. The third transistor is coupled between a power supply and a node. The latch-up device is coupled between the node and the I/O pad. | 01-07-2010 |
| 20100006924 | ONE-TIME PROGRAMMABLE READ-ONLY MEMORY - A one-time programmable read-only memory (OTP-ROM) including a substrate, a first doped region, a second doped region, a third doped region, a first dielectric layer, a select gate, a second dielectric layer, a first channel, a second channel and a silicide layer is provided. The first doped region, the second doped region and the third doped region are disposed apart in a substrate. The first dielectric layer is disposed on the substrate between the first doped region and the second doped region. The select gate is disposed on the first dielectric layer. The second dielectric layer is disposed on the substrate between the second doped region and the third doped region. The silicide layer is disposed on the first doped region, the second doped region and the third doped region. The OTP-ROM stores data by a punch-through effect occurring between the second doped region and the third doped region. | 01-14-2010 |
| 20100073985 | METHOD FOR OPERATING ONE-TIME PROGRAMMABLE READ-ONLY MEMORY - A method for operating a one-time programmable read-only memory (OTP-ROM) is provided. The OTP-ROM comprises a first gate and a second gate respectively disposed on a gate dielectric layer between a first doped region and a second doped region on a substrate, wherein the first gate is adjacent to the first doped region and coupled to the first doped region, the second gate is adjacent to the second doped region, the first gate is electrically coupled grounded, and the OTP-ROM is programmed through a breakdown effect. The method comprises a step of programming the OTP-ROM under the conditions that a voltage of the second doped region is higher than a voltage of the first doped region, the voltage of the second gate is higher than a threshold voltage to pass the voltage of the second doped region, and the first doped region and the substrate are at a reference voltage. | 03-25-2010 |
| 20100265755 | ONE TIME PROGRAMMABLE READ ONLY MEMORY AND PROGRAMMING METHOD THEREOF - A one time programmable read only memory disposed on a substrate of a first conductive type is provided. A gate structure is disposed on the substrate. A first doped region and a second doped region are disposed in the substrate at respective sides of the gate structure, and the first doped region and the second doped region are of a second conductive type which is different from the first conductive type. A third doped region of the first conductive type is disposed in the substrate and is adjacent to the second doped region, and a junction is formed between the third doped region and the second doped region. A metal silicide layer is disposed on the substrate. An clearance is formed in the metal silicide layer, and the clearance at least exposes the junction. | 10-21-2010 |
