Patent application number | Description | Published |
20130233482 | UV Mask with Anti-Reflection Coating and UV Absorption Material - One embodiment may take the form of a UV mask for use while curing sealant on LCD displays. The UV mask includes a mother glass and a UV mask layer on the mother glass. A UV absorption film is located adjacent the UV mask layer and an anti-reflection (AR) film is located adjacent the UV absorption film. | 09-12-2013 |
20130235003 | GATE LINE DRIVER CIRCUIT FOR DISPLAY ELEMENT ARRAY - Gate line driver circuitry applies an output pulse to each of several gate lines for a display element array. The circuitry has a number of gate drivers each being coupled to drive a respective one of the gate lines. Each of the gate drivers has an output stage in which a high side transistor and a low side transistor are coupled to drive the respective gate line, responsive to at least one clock signal. A pull down transistor is coupled to discharge a control electrode of the output stage. A control circuit having a cascode amplifier is coupled to drive the pull down transistor as a function of a) at least one clock signal and b) feedback from the control electrode. Other embodiments are also described and claimed. | 09-12-2013 |
20130235020 | PIXEL INVERSION ARTIFACT REDUCTION - A system and device for driving high resolution monitors while reducing artifacts thereon. Utilization of Z-inversion polarity driving techniques to drive pixels in a display reduces power consumption of the display but tends to generate visible horizontal line artifacts caused by capacitances present between the pixels and data lines of the display. By introducing a physical shield between the pixel and data line elements, capacitance therebetween can be reduced, thus eliminating the cause of the horizontal line artifacts. The shield may be a common voltage line (Vcom) of the display. | 09-12-2013 |
20130329150 | COLUMN SPACER DESIGN FOR A DISPLAY INCORPORATING A THIRD METAL LAYER - A display that contains a column spacer arrangement which takes advantage of a protrusion on a TFT substrate is provided. One set of column spacers is disposed on top of the protrusion, while a second set of column spacers of substantially the same height as the first set of column spacers are disposed throughout the display. In this way, the display is adequately protected against deformation from external forces while at the same maintaining enough room to allow for a liquid crystal to spread out during the manufacturing process. | 12-12-2013 |
20130335658 | Pixel Architecture for Electronic Displays - An electronic display for providing a visual or video output for an electronic device. The electronic device includes a transistor layer configured to activate a first pixel row and a second pixel row. For each pixel in the first pixel row and the second pixel row, the transistor layer includes a switch transistor, a pixel electrode, and a common electrode. The electronic device further includes a pixel controller for selectively activating each pixel. The pixel controller includes a first gate line, a first drive line, and a second drive line. During operation, the first gate line provides a charge to the pixel electrode for a first pixel in the first pixel row and for a second pixel in the second pixel row, and the first drive line activates the switch transistor for the first pixel, and the second drive line activates the switch transistor for the second pixel. | 12-19-2013 |
20140042427 | Gate Insulator Loss Free Etch-Stop Oxide Thin Film Transistor - A method is provided for fabricating a thin-film transistor (TFT). The method includes forming a semiconductor layer over a gate insulator that covers a gate electrode, and depositing an insulator layer over the semiconductor layer, as well as etching the insulator layer to form a patterned etch-stop without losing the gate insulator. The method also includes forming a source electrode and a drain electrode over the semiconductor layer and the patterned etch-stop. The method further includes removing a portion of the semiconductor layer beyond the source electrode and the drain electrode such that a remaining portion of the semiconductor layer covers the gate insulator in a first overlapping area of the source electrode and the gate electrode and a second overlapping area of the drain electrode and gate electrode. | 02-13-2014 |
20140091390 | Protection Layer for Halftone Process of Third Metal - A thin-film transistor having a protection layer for a planarization layer. The protection layer prevents reduction of the planarization layer during an ashing process, thereby preventing the formation of a steeply tapered via hole through the planarization layer. In this manner, the via hole may be coated with a conductive element that may serve as a conductive path between a common electrode and the drain of the transistor. | 04-03-2014 |
20140098332 | Displays With Logos and Alignment Marks - An electronic device may be provided with a display mounted in a housing. The display may include a color filter layer, a liquid crystal layer, and a thin-film transistor layer. The color filter layer may form the outermost layer of the display. A color filter layer substrate in the color filter layer may have opposing inner and outer surfaces. A layer of patterned metal on the inner surface may form metal alignment marks. The metal alignment marks may include alignment marks for color filter elements, alignment marks for a black matrix layer that is formed on top of the color filter elements, and post spacer alignment marks. The layer of patterned metal may also form structures such as logo structures that are visible on the outer surface in an inactive border region of the display. | 04-10-2014 |
20140111496 | Displays with Circuitry for Compensating Parasitic Coupling Effects - An electronic device may have a display such as a liquid crystal display. The display may have a color filter layer and a thin-film transistor (TFT) layer. An active portion of the display may contain an array of display pixels that are controlled by control signals that are provided over intersecting gate lines and data lines. In an inactive portion of the display, display driver circuitry may be used to provide data signals for the data lines. Each display pixel may be coupled to a corresponding gate line, data line, and may share a common electrode. Changes in the data signals may be coupled onto the common electrode to cause voltage rippling. Compensation circuitry may be coupled to the common electrode via an AC or a DC coupling connection to help reduce the voltage rippling. | 04-24-2014 |
20140118666 | Display with Column Spacer Structures Resistant to Lateral Movement - A display may have a color filter layer and a thin-film transistor layer. A layer of liquid crystal material may be located between the color filter layer and the thin-film transistor layer. Column spacers may be formed on the color filter layer to maintain a desired gap between the color filter and thin-film transistor layers. Support pads may be used to support the column spacers. Different column spacers may be located at different portions of the support pads to allow the support pad size to be reduced while ensuring adequate support. Lateral movement blocking structures such as circular rings may be used to prevent column spacer lateral movement. Subspacers located over pads may be used to create friction that retards lateral movement. Lateral movement may also be retarded by receiving column spacers in trenches or other recesses formed on a thin-film transistor layer. | 05-01-2014 |
20140120657 | Back Channel Etching Oxide Thin Film Transistor Process Architecture - A method is provided for fabricating a back channel etching (BCE) oxide thin film transistor (TFT) for a liquid crystal display. The method includes forming a first metal layer having a first portion and a second portion over a substrate, depositing a gate insulator over the first metal layer, and disposing a semiconductor layer over the gate insulator. The method also includes depositing a half-tone photoresist to cover a first portion of the semiconductor layer and the first portion of the first metal layer. The half-tone photoresist has a first portion and a second portion thicker than the first portion. The first portion has a via hole above the second portion of the first metal layer. The second portion of the half-tone photoresist covers the first portion of the first metal layer. The method further includes etching a portion of the gate insulator through the via hole such that the second portion of the first metal layer is exposed, removing the first portion of the half-tone photoresist while remaining the second portion of the half-tone photoresist, and etching to remove a second portion of the semiconductor layer that is not covered by the half-tone photoresist. | 05-01-2014 |
20140211120 | Third Metal Layer for Thin Film Transistor witih Reduced Defects in Liquid Crystal Display - A liquid crystal display (LCD) includes an array of pixels over a thin film transistor (TFT) substrate. The TFT substrate includes a TFT that has a first metal layer to form a gate electrode and a second metal layer to form a source electrode and a drain electrode for each pixel. The LCD also includes an organic insulation layer disposed over the TFT substrate, where the organic insulator layer has trenches on a top surface. The LCD further includes a third metal layer disposed over the organic insulation layer in the trenches, the trenches having a trench depth at least equal to the thickness of the third metal layer. The LCD also includes a passivation layer over the third metal layer, and a pixel electrode for each pixel over the passivation layer. The LCD further includes a polymer layer over the pixel electrode, and liquid molecules on the polymer layer. | 07-31-2014 |
20140240985 | Electronic Device With Reduced-Stress Flexible Display - An electronic device may have a flexible display. The display may have portions that are bent along a bend axis. The display may have display circuitry such as an array of display pixels in an active area and signal lines, thin-film transistor support circuitry and other display circuitry in an inactive area of the display surrounding the active area. The display circuitry may be formed on a substrate such as a flexible polymer substrate. The flexible polymer substrate may be formed by depositing polymer on a support structure that has raised portions. | 08-28-2014 |
20140370655 | Gate Insulator Loss Free Etch-Stop Oxide Thin Film Transistor - A method is provided for fabricating a thin-film transistor (TFT). The method includes forming a semiconductor layer over a gate insulator that covers a gate electrode, and depositing an insulator layer over the semiconductor layer, as well as etching the insulator layer to form a patterned etch-stop without losing the gate insulator. The method also includes forming a source electrode and a drain electrode over the semiconductor layer and the patterned etch-stop. The method further includes removing a portion of the semiconductor layer beyond the source electrode and the drain electrode such that a remaining portion of the semiconductor layer covers the gate insulator in a first overlapping area of the source electrode and the gate electrode and a second overlapping area of the drain electrode and gate electrode. | 12-18-2014 |
20150054799 | Display Driver Circuitry For Liquid Crystal Displays With Semiconducting-Oxide Thin-Film Transistors - An electronic device may include a display having an array of display pixels on a substrate. The display pixels may be organic light-emitting diode display pixels or display pixels in a liquid crystal display. In an organic light-emitting diode display, hybrid thin-film transistor structures may be formed that include semiconducting oxide thin-film transistors, silicon thin-film transistors, and capacitor structures. The capacitor structures may overlap the semiconducting oxide thin-film transistors. Organic light-emitting diode display pixels may have combinations of oxide and silicon transistors. In a liquid crystal display, display driver circuitry may include silicon thin-film transistor circuitry and display pixels may be based on oxide thin-film transistors. A single layer or two different layers of gate metal may be used in forming silicon transistor gates and oxide transistor gates. A silicon transistor may have a gate that overlaps a floating gate structure. | 02-26-2015 |
20150055047 | Liquid Crystal Displays with Oxide-Based Thin-Film Transistors - An electronic device may include a display having an array of display pixels on a substrate. The display pixels may be organic light-emitting diode display pixels or display pixels in a liquid crystal display. In an organic light-emitting diode display, hybrid thin-film transistor structures may be formed that include semiconducting oxide thin-film transistors, silicon thin-film transistors, and capacitor structures. The capacitor structures may overlap the semiconducting oxide thin-film transistors. Organic light-emitting diode display pixels may have combinations of oxide and silicon transistors. In a liquid crystal display, display driver circuitry may include silicon thin-film transistor circuitry and display pixels may be based on oxide thin-film transistors. A single layer or two different layers of gate metal may be used in forming silicon transistor gates and oxide transistor gates. A silicon transistor may have a gate that overlaps a floating gate structure. | 02-26-2015 |
20150055051 | Displays With Silicon and Semiconducting Oxide Thin-Film Transistors - An electronic device may include a display having an array of display pixels on a substrate. The display pixels may be organic light-emitting diode display pixels or display pixels in a liquid crystal display. In an organic light-emitting diode display, hybrid thin-film transistor structures may be formed that include semiconducting oxide thin-film transistors, silicon thin-film transistors, and capacitor structures. The capacitor structures may overlap the semiconducting oxide thin-film transistors. Organic light-emitting diode display pixels may have combinations of oxide and silicon transistors. In a liquid crystal display, display driver circuitry may include silicon thin-film transistor circuitry and display pixels may be based on oxide thin-film transistors. A single layer or two different layers of gate metal may be used in forming silicon transistor gates and oxide transistor gates. A silicon transistor may have a gate that overlaps a floating gate structure. | 02-26-2015 |