Patent application number | Description | Published |
20130341658 | LIGHT-EMITTING DEVICE HAVING DIELECTRIC REFLECTOR AND METHOD OF MANUFACTURING THE SAME - A light-emitting device includes a first conductive semiconductor layer formed on a substrate, a mask layer formed on the first conductive semiconductor layer and having a plurality of holes, a plurality of vertical light-emitting structures vertically grown on the first conductive semiconductor layer through the plurality of holes, a current diffusion layer surrounding the plurality of vertical light-emitting structures on the first conductive semiconductor layer, and a dielectric reflector filling a space between the plurality of vertical light-emitting structures on the current diffusion layer. | 12-26-2013 |
20140183546 | NITRIDE-BASED SEMICONDUCTOR LIGHT-EMITTING DEVICE - A nitride-based semiconductor light-emitting device includes an n-type nitride-based semiconductor layer, an active layer, a p-type nitride-based semiconductor layer, an ohmic contact layer covering a portion of the p-type nitride-based semiconductor layer upper surface, and a p electrode including a first portion contacting the p-type nitride-based semiconductor layer and a second portion contacting the ohmic contact layer. | 07-03-2014 |
20140203240 | SEMICONDUCTOR LIGHT EMITTING DEVICE AND MANUFACTURING METHOD OF THE SAME - A semiconductor light emitting device includes a substrate; a base layer made of a first conductivity-type semiconductor and disposed on the substrate; a plurality of nanoscale light emitting units disposed in a region of an upper surface of the base layer and including a first conductivity-type nano-semiconductor layer protruding from the upper surface of the base layer, a nano-active layer disposed on the first conductivity-type nano-semiconductor layer, and a second conductivity-type nano-semiconductor layer disposed on the nano-active layer; and a light emitting laminate disposed in a different region of the upper surface of the base layer and having a laminated active layer. | 07-24-2014 |
20140203292 | SEMICONDUCTOR LIGHT EMITTING DEVICE - A semiconductor light emitting device includes a light-transmissive substrate, a light-transmissive buffer layer disposed on the light-transmissive substrate, and a light emitting structure. The light-transmissive buffer layer includes a first layer and a second layer having different refractive indices and disposed alternately at least once. The light emitting structure includes a first conductivity-type semiconductor layer, an active layer, and a second conductivity-type semiconductor layer sequentially disposed on the buffer layer. | 07-24-2014 |
20140203293 | NITRIDE SEMICONDUCTOR LIGHT EMITTING DEVICE - A nitride semiconductor light emitting device includes a substrate, a multi-layer structure, a light-transmitting concave-convex structure and a light emitting structure. The multi-layer structure has layers of a first layer and a second layer such that the first and second layers have different refractive indexes and are alternately stacked. The concave-convex structure is disposed in an upper surface of the multi-layer structure and includes a light-transmitting material. The light emitting structure is disposed on the multi-layer structure and includes a first conductive semiconductor layer, an active layer, and a second conductive semiconductor layer. | 07-24-2014 |
20140206116 | SEMICONDUCTOR LIGHT EMITTING DEVICE AND METHOD OF MANUFACTURING THE SAME - There are provided a semiconductor light emitting device and a method of manufacturing the same. A method of manufacturing a plurality of light emitting nanostructures of a semiconductor light emitting device includes: forming a plurality of first conductivity type semiconductor cores on a first type semiconductor seed layer, each first conductivity type semiconductor core formed through an opening in an insulating film; forming an active layer on each first conductivity type semiconductor core; forming, using a mask pattern, a second conductivity type semiconductor layer on each active layer to cover the active layer, to form a plurality of light emitting nanostructures; and forming an electrode on the plurality of light emitting nanostructures. | 07-24-2014 |
20140264254 | SEMICONDUCTOR LIGHT EMITTING DEVICE AND ILLUMINATION APPARATUS INCLUDING THE SAME - There is provided a light emitting device including a plurality of nanoscale light emitting structures spaced apart from one another on a first conductivity-type semiconductor base layer, the plurality of nanoscale light emitting structures each including a first conductivity-type semiconductor core, an active layer and a second conductivity-type semiconductor layer, and an electrode connected to the second conductivity-type semiconductor layer. The electrode is disposed between a first nanoscale light emitting structure and a second nanoscale light emitting structure among the plurality of nanoscale light emitting structures, and the electrode has a height lower than a height of the plurality of nanoscale light emitting structures. | 09-18-2014 |
20140367727 | LIGHT-EMITTING DEVICE HAVING DIELECTRIC REFLECTOR AND METHOD OF MANUFACTURING THE SAME - A light-emitting device includes a first conductive semiconductor layer formed on a substrate, a mask layer formed on the first conductive semiconductor layer and having a plurality of holes, a plurality of vertical light-emitting structures vertically grown on the first conductive semiconductor layer through the plurality of holes, a current diffusion layer surrounding the plurality of vertical light-emitting structures on the first conductive semiconductor layer, and a dielectric reflector filling a space between the plurality of vertical light-emitting structures on the current diffusion layer. | 12-18-2014 |
20150041822 | SEMICONDUCTOR LIGHT EMITTING DEVICE - A semiconductor light emitting device includes a substrate, a reflective layer and a light emitting structure. The reflective layer includes at least two porous layers alternately disposed on the substrate and having different porosities. The light emitting structure is disposed on the reflective layer and includes a first conductivity-type semiconductor layer, an active layer and a second conductivity-type semiconductor layer. | 02-12-2015 |