Patent application number | Description | Published |
20100109111 | MAGNETIC TUNNEL JUNCTION STRUCTURE HAVING FREE LAYER WITH OBLIQUE MAGNETIZATION - The present invention provides a magnetic tunnel junction structure, including a first magnetic layer having a fixed magnetization direction; a second magnetic layer having a reversible magnetization direction; a non-magnetic layer formed between the first magnetic layer and the second magnetic layer; a third magnetic layer allowing the magnetization direction of the second magnetic layer to be inclined with respect to a plane of the second magnetic layer by a magnetic coupling to the second magnetic layer, and having a perpendicular magnetic anisotropic energy thereof larger than an in-plane magnetic anisotropic energy thereof; and a crystal-structure separation layer formed between the second magnetic layer and the third magnetic layer for separating a crystallographic structure between the second and the third magnetic layers. | 05-06-2010 |
20100308378 | InSb-BASED SWITCHING DEVICE - The present invention provides an InSb-based switching device operating at room temperature by using a magnetic field controlled avalanche process for applying to magneto-logic elements. A switching device of one embodiment includes a p-type semiconductor layer; an n-type semiconductor layer; and contact layers disposed on one of the p-type and n-type semiconductor layers, the p-type semiconductor layer being in contact with the n-type semiconductor layer such that a current can be applied through the contact layers to the p-type and n-type semiconductor layers to cause a current flow from one of the contact layers to the p-type and n-type semiconductor layers and from the p-type and n-type semiconductor layers to the other of the contact layers, whereby the current flow can be controlled by an intensity of a magnetic field applied to the p-type and n-type semiconductor layers substantially perpendicularly thereto. | 12-09-2010 |
20110045320 | Magnetic tunnel junction device and method for manufacturing the same - The present invention relates to a magnetic tunnel junction device and a manufacturing method thereof. The magnetic tunnel junction device includes: i) a first magnetic layer including a compound having a chemical formula of (A | 02-24-2011 |
20110084347 | MAGNETIC TUNNEL JUNCTION DEVICE AND METHOD FOR MANUFACTURING THE SAME - The present invention relates to a magnetic tunnel junction device and a manufacturing method thereof. The magnetic tunnel junction device includes i) a first magnetic layer having an switchable magnetization direction, ii) a nonmagnetic layer provided on the first magnetic layer, iii) a second magnetic layer provided on the nonmagnetic layer and having a fixed magnetization direction, iv) an oxidation-preventing layer provided on the second magnetic layer, v) a third magnetic layer provided on the oxidation-preventing layer and fixing the magnetization direction of the second magnetic layer through magnetic coupling with the second magnetic layer, and vi) an antiferromagnetic layer provided on the third magnetic layer and fixing a magnetization direction of the third magnetic layer. | 04-14-2011 |
20110089508 | MAGNETIC TUNNEL JUNCTION STRUCTURE WITH PERPENDICULAR MAGNETIZATION LAYERS - Disclosed is a magnetic tunnel junction structure having perpendicular anisotropic free layers, and it could be accomplished to reduce a critical current value required for switching and maintain thermal stability even if a device is fabricated small in size, by maintaining the magnetization directions of the free magnetic layer and the fixed magnetic layer constituting the magnetic tunnel junction structure perpendicular to each other. | 04-21-2011 |
20120296615 | METHOD FOR SIMULATING FLUID FLOW AND RECORDING MEDIUM FOR PERFORMING THE METHOD - A method for simulating fluid flow includes: discretizing a space in which a fluid flows into a regular lattice; assuming that fluid particles repetitively move and collide in the lattice; deriving a univariate polynomial equation by comparing the n-th (n is a non-negative integer) order momentum of velocity between the Maxwell-Boltzmann distribution and the discretized Maxwell-Boltzmann distribution; calculating the weight coefficients corresponding to the discrete velocities of the fluid particles based on the univariate polynomial equation; and deriving a lattice Boltzmann model using the weight coefficients. A lattice Boltzmann model with superior stability and accuracy may be derived easily. | 11-22-2012 |
20130051062 | LIGHT EMITTING MODULE AND BACKLIGHT UNIT HAVING THE SAME - Provided are a light emitting module and a backlight unit. The light emitting module comprises a module board comprising a plurality of first and second pads and a plurality of protrusion holes, a heatsink plate corresponding to a second surface opposite to a first surface of the module board, the heatsink plate comprising a plurality of protrusions respectively inserted into the protrusion holes of the module board, and a plurality of light emitting devices, each comprising a heatsink frame connected to the protrusions of the heatsink plate which comprises a first frame part on which the plurality of protrusions are disposed and a second frame part folded from the first frame part and disposed under the module board. | 02-28-2013 |
20130130063 | PERPENDICULARLY MAGNETIZED THIN FILM STRUCTURE AND METHOD FOR MANUFACTURING THE SAME - A perpendicularly magnetized thin film structure and a method of manufacturing the perpendicularly magnetized thin film structure are provided. The perpendicularly magnetized thin film structure includes i) a base layer, ii) a magnetic layer located on the base layer and having an L1 | 05-23-2013 |
20130314166 | OSCILLATOR USING SPIN TRANSFER TORQUE - An oscillator using spin transfer torque includes i) a pinned magnetic layer having a fixed magnetization direction, ii) a non-magnetic layer located on the pinned magnetic layer, and iii) a free magnetic layer located on the non-magnetic layer. The pinned magnetic layer includes i) a first part of the fixed magnetic layer and ii) a second part of the fixed magnetic layer located thereon. The first part of the fixed magnetic layer includes i) a first interface in contact with the second part of the fixed magnetic layer and ii) a second surface exposed to an outside while surrounding the first interface. | 11-28-2013 |
20140349416 | METHOD FOR MANUFACTURING A MAGNETIC TUNNEL JUNCTION - The present invention relates to a magnetic tunnel junction device and a manufacturing method thereof. The magnetic tunnel junction device includes: i) a first magnetic layer including a compound having a chemical formula of (A | 11-27-2014 |