Patent application number | Description | Published |
20090075197 | PHOTORESIST COMPOSITION, METHOD OF FORMING PATTERN USING THE PHOTORESIST COMPOSITION AND INKJET PRINT HEAD - A photoresist composition including an oxetane-containing compound represented by Formula 1 or 2, an oxirane-containing compound represented by Formula 3 or 4, a photoinitiator, and a solvent, a method of forming a pattern using the photoresist composition, and an inkjet print head including a polymerization product of the photoresist composition. | 03-19-2009 |
20090090903 | CMOS IMAGE SENSOR HAVING THIOPHENE DERIVATIVES - Provided is a CMOS image sensor that uses thiophene derivatives. The CMOS image sensor includes first through third photoelectric conversion units vertically and sequentially stacked on a semiconductor substrate. The first photoelectric conversion unit detects blue light and comprises a first electrode, a second electrode, and a p-type thiophene derivative layer between the first electrode and the second electrode. | 04-09-2009 |
20090294761 | ORGANIC PHOTOELECTRIC CONVERSION FILM, AND PHOTOELECTRIC CONVERSION DEVICE AND IMAGE SENSOR EACH HAVING THE ORGANIC PHOTOELECTRIC CONVERSION FILM - Provided are an organic photoelectric conversion film, and a photoelectric conversion device and an image sensor each having the organic photoelectric conversion film. The organic photoelectric conversion film includes a p-type material layer formed of an organic material; and a n-type material layer formed on the p-type material layer, the n-type material being formed from naphthalene-1,4,5,8-tetracarboxylic dianhydride (NTCDA). | 12-03-2009 |
20100109116 | PHOTOELECTRIC CONVERSION FILM, PHOTOELECTRIC CONVERSION DEVICE AND COLOR IMAGE SENSOR HAVING THE PHOTOELECTRIC CONVERSION DEVICE - A blue color photoelectric conversion film includes: a p-type layer formed by depositing tetracene; a p,n-type layer formed by co-depositing tetracene and naphthalene-tetracarboxylic-dianhydride (“NTCDA”) on the p-type layer; and an n-type layer formed by depositing NTCDA on the p,n-type layer. | 05-06-2010 |
20110001128 | COLOR UNIT AND IMAGING DEVICE HAVING THE SAME - A color unit is disclosed in which is included in an imaging device. The color unit includes; a first p-type electrode layer disposed on a light receiving side of the color unit, and including a light-absorptive organic material which selectively absorbs a wavelength other than a desired wavelength in a visible light band of the electromagnetic spectrum, a second p-type electrode layer disposed under the first p-type electrode layer and including a light-absorptive organic material which absorbs a desired wavelength and an n-type electrode layer disposed under the second p-type electrode layer and including an organic material, wherein photoelectric conversion is performed through a p-n junction between the second p-type electrode layer and the n-type electrode layer and light of the desired wavelength is converted into electrical current. | 01-06-2011 |
20110043460 | TOUCH PANEL - A touch panel includes an infrared (“IR”) sensor and an IR source that supplies IR light to the infrared sensor. The IR sensor includes an absorbing layer and a PN junction layer disposed on the absorbing layer. The absorbing layer includes a material that selectively absorbs light having a wavelength in an infrared range. The PN junction layer includes a P-type organic material layer and an N-type organic material layer. | 02-24-2011 |
20120056192 | COMPOUND SEMICONDUCTOR IMAGE SENSOR - A stack-type image sensor using a compound semiconductor. The stack-type image sensor includes a stack of photoelectric conversion units which are sequentially arranged in a light incident direction and which absorb light in ascending order of a wavelength from shortest to longest. | 03-08-2012 |
20130082250 | PHOTOELECTRIC CONVERSION FILM, PHOTOELECTRIC CONVERSION DEVICE AND COLOR IMAGE SENSOR HAVING THE PHOTOELECTRIC CONVERSION DEVICE - A blue color photoelectric conversion film includes: a p-type layer formed by depositing tetracene; a p,n-type layer formed by co-depositing tetracene and naphthalene- tetracarboxylic-dianhydride (“NTCDA”) on the p-type layer; and an n-type layer formed by depositing NTCDA on the p,n-type layer. | 04-04-2013 |
20140070183 | ORGANIC PHOTOELECTRIC DEVICE AND IMAGE SENSOR - An organic photoelectric device includes a first electrode, a metal nanolayer contacting one side of the first electrode, an active layer on one side of the metal nanolayer, and a second electrode on one side of the active layer. An image sensor includes the organic photoelectric device. | 03-13-2014 |
20140070189 | LIGHT TRANSMISSIVE ELECTRODE, ORGANIC PHOTOELECTRIC DEVICE, AND IMAGE SENSOR - According to example embodiments, a transmissive electrode may include a light transmission layer. The light transmission layer may include a metal and a metal oxide that is included in a smaller amount than the metal. According to example embodiments, an organic photoelectric device, as well as an image sensor, may include the transmissive electrode. | 03-13-2014 |
20140097416 | ORGANIC PHOTOELECTRIC DEVICE AND IMAGE SENSOR - An organic photoelectric device may include a first electrode and a second electrode facing each other and an active layer between the first electrode and the second electrode, the active layer including a compound represented by Chemical Formula 1 and a compound represented by Chemical Formula 2. An image sensor may include the organic photoelectric device. | 04-10-2014 |
20140239271 | PHOTOELECTRONIC DEVICE AND IMAGE SENSOR - A photoelectronic device includes a first electrode, a second electrode facing the first electrode, an active layer between the first electrode and the second electrode, and an auxiliary layer between the first electrode and the active layer, the auxiliary layer including a first auxiliary layer including a metal oxide and a metal and a second auxiliary layer including a first organic material having a HOMO energy level of greater than or equal to about 6.0 eV. | 08-28-2014 |
20140239278 | PHOTOELECTRONIC DEVICE AND IMAGE SENSOR - Disclosed are a photoelectronic device including a first electrode including a first metal; an active layer disposed between the first electrode and a second electrode; and a diffusion barrier layer disposed between the first electrode and the active layer; the diffusion barrier layer including a second metal, wherein the second metal has a thermal diffusivity that is lower than a thermal diffusivity of the first metal, and wherein the first electrode and the diffusion barrier layer are configured to transmit light, and an image sensor including the photoelectronic device. | 08-28-2014 |
20140346466 | ORGANIC PHOTOELECTRONIC DEVICE AND IMAGE SENSOR - An organic photoelectronic device includes a first electrode and a second electrode facing each other, and an active layer between the first electrode and the second electrode, the active layer including a compound represented by Chemical Formula 1 or Chemical Formula 2, and a compound represented by Chemical Formula 3. | 11-27-2014 |
20150041940 | IMAGE SENSOR AND ELECTRONIC DEVICE INCLUDING THE SAME - An image sensor includes a semiconductor substrate integrated with at least one first photo-sensing device sensing light in a first wavelength region and at least one second photo-sensing device sensing light in a second wavelength region shorter than the first wavelength region, a photoelectric device including a pair of electrodes facing each other and a light absorption layer between the electrodes, the photoelectric device selectively absorbing light in a third wavelength region between the first wavelength region and the second wavelength region, and a nanostructural body between the semiconductor substrate and the photoelectric device, the nanostructural body including at least two parts having different optical paths. | 02-12-2015 |