Patent application number | Description | Published |
20080290918 | DLL CIRCUIT OF SEMICONDUCTOR MEMORY APPARATUS AND METHOD OF DELAYING AND LOCKING CLOCK IN SEMICONDUCTOR MEMORY APPARATUS - A DLL circuit of a semiconductor memory apparatus includes a frequency sensing unit that generates and outputs a high frequency signal and a low frequency signal on the basis of a CAS latency signal. A clock dividing unit divides the frequency of an internal clock by a predetermined value and generates a divided clock in response with whether the high frequency signal is enabled or the low frequency signal is enabled. A phase sensing unit that switches a reference clock and a comparison clock, compares the phases thereof in accordance with whether the high frequency signal is enabled or the low frequency signal is enabled, selectively switches first and second phase control signals generated on the basis of the comparison result, and outputs the switched signals. | 11-27-2008 |
20090168565 | SEMICONDUCTOR MEMORY DEVICE AND METHOD FOR OPERATING THE SAME - Semiconductor memory device and method for operating the same comprise an auxiliary driver configured to output an internal strobe signals generated corresponding to a read command as a plurality of auxiliary strobe signal in response to a control signal, wherein the auxiliary driver bypass a first output auxiliary strobe signal, and delay to output the rest of the auxiliary strobe signal among the outputted auxiliary strobe signal and a strobe signal generator for driving the auxiliary strobe signal to output the delayed auxiliary strobe signal as a data strobe signals. | 07-02-2009 |
20090257291 | SEMICONDUCTOR MEMORY DEVICE AND METHOD FOR GENERATING PIPE-IN SIGNAL THEREOF - A semiconductor memory device includes a preliminary signal generator configured to output a preliminary pipe-in signal enabled when a read command is applied. A delay unit is configured to delay the preliminary pipe-in signal and output the delayed preliminary pipe-in signal to match the timing of output data. A pipe-in signal generator generates a pipe-in signals that are enabled between a predetermined enable point and a next enable point of the delayed preliminary pipe-in signal output. | 10-15-2009 |
20100157712 | REFRESH CIRCUIT OF SEMICONDUCTOR MEMORY APPARATUS - A refresh circuit of a semiconductor memory apparatus includes a bank active signal generator configured to selectively enable a plurality of bank active signals in response to a piled signal and disable the plurality of bank active signals in response to a plurality of precharge pulses when a refresh signal is enabled; a precharge pulse generator configured to generate a plurality of preliminary precharge pulses in response to the plurality of bank active signals; a delaying unit configured to generate a plurality of preliminary delay precharge pulses by delaying the plurality of preliminary precharge pulses; and a selecting unit configured to selectively output the plurality of preliminary precharge pulses or the plurality of preliminary delay precharge pulses as the plurality of precharge pulses in response to the piled signal. | 06-24-2010 |
20100287337 | NONVOLATILE MEMORY DEVICE AND METHOD OF OPERATING THE SAME - A nonvolatile memory device has a memory cell array including a memory cell group for storing option information, and a controller configured to wait for a preset period of time after a command for loading the option information has been received before performing an operation of loading the option information. | 11-11-2010 |
20100302827 | CODE ADDRESS MEMORY (CAM) CELL READ CONTROL CIRCUIT OF SEMICONDUCTOR MEMORY DEVICE AND METHOD OF READING DATA OF CAM CELL - A Code Address Memory (CAM) cell read control circuit of a semiconductor memory device includes a CAM cell read circuit configured to read data stored in a CAM cell and to output the read data, an internal delay circuit configured to delay an externally input reset signal and to generate a number of internal command signals, and a signal generation unit configured to generate an internal ready/busy signal in response to the internal command signals. The internal ready/busy signal is generated after the externally input reset signal has reset the CAM cell read circuit. | 12-02-2010 |
20110234281 | DLL CIRCUIT AND METHOD OF CONTROLLING THE SAME - A delayed lock loop (DLL) circuit includes: a phase conversion control unit configured to latch and drive a phase comparison signal in response to the input of a delay enable signal, and output the driven signal as a phase conversion control signal. A phase converting unit configured to control the phase of a delay clock on the basis of the phase conversion control signal, and transmit the controlled delay clock to a delay compensating unit. | 09-29-2011 |
20120032706 | MULTI-CHIP PACKAGE - A multi-chip package includes a plurality of chips coupled in parallel to an I/O pad and an output driver circuit included in each of the chips and configured to transmit output data to the I/O pad. The driving force of the output driver circuit is controlled on the basis of stack information indicative of the number of chips being activated. | 02-09-2012 |
20120140577 | MULTI-CHIP PACKAGE AND METHOD OF OPERATING THE SAME - A semiconductor memory device includes a memory cell array including first memory cells for storing data and second memory cells for storing chip identification (ID) information, a data comparison circuit configured to compare input data and the stored data of the first memory cells and to output comparison data, and output circuits configured to output the comparison data received in parallel from the data comparison circuit. The comparison data is outputted through a selected one of the output circuits according to an enable signal generated based on the chip ID information. | 06-07-2012 |