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Kyoung-Mi

Kyoung-Mi Jin, Seongnam-Si KR

Patent application number	Description	Published
20100141777	DISPLAY APPARATUS AND METHOD OF DISPLAYING POWER COMSUMPTION THEREOF - A display apparatus which displays its power consumption and a method of displaying power consumption thereof, are provided. The method of displaying power consumption of a display apparatus which includes a display, the method including: measuring power consumption of the display apparatus; displaying power consumption information about a measured power consumption and a settings menu to adjust a setting value involved in controlling the display apparatus on the display; and displaying power consumption information which is changed in accordance with an adjusted setting value on the display. The display apparatus and the method provide displaying power consumption on a screen, the power consumption being changed by adjusting setting values involved in controlling the display apparatus.	06-10-2010

Kyoung-Mi Juhn, Seoul KR

Patent application number	Description	Published
20100292166	PHARMACEUTICAL COMPOSITION FOR TREATING MALIGNANT TUMORS CONTAINING HUMAN p31 GENES - A pharmaceutical composition for the treatment of malignant tumors comprising a human p31	11-18-2010

Kyoung-Mi Kim, Anyang-Si KR

Patent application number	Description	Published
20080214422	THINNER COMPOSITION AND METHOD OF REMOVING PHOTORESIST USING THE SAME - A thinner composition includes propylene glycol ether acetate, methyl 2-hydroxy-2-methyl propionate, and an ester compound such as ethyl lactate, ethyl 3-ethoxy propionate or a mixture thereof.	09-04-2008
20090017592	Siloxane polymer composition, method of forming a pattern using the same, and method of manufacturing a semiconductor using the same - A siloxane polymer composition includes an organic solvent in an amount of about 93 percent by weight to about 98 percent by weight, based on a total weight of the siloxane polymer composition, and a siloxane complex in an amount of about 2 percent by weight to about 7 percent by weight, based on the total weight of the siloxane polymer composition, the siloxane complex including a siloxane polymer with an introduced carboxylic acid and being represented by Formula 1 below,	01-15-2009
20100248134	Methods of forming a pattern using negative-type photoresist compositions - A method of forming a pattern and a negative-type photoresist composition, the method including forming a photoresist film on a substrate by coating a photoresist composition thereon, the photoresist composition including a polymer, a photoacid generator, and a solvent, wherein the polymer includes an alkoxysilyl group as a side chain and is cross-linkable by an acid to be insoluble in a developer; curing a first portion of the photoresist film by exposing the first portion to light, the exposed first portion being cured by a cross-linking reaction of the alkoxysilyl groups therein; and providing a developer to the photoresist film to remove a second portion of the photoresist film that is not exposed to light, thereby forming a photoresist pattern on the substrate.	09-30-2010
20100305266	SILOXANE POLYMER COMPOSITION - A siloxane polymer composition includes an organic solvent in an amount of about 93 percent by weight to about 98 percent by weight, based on a total weight of the siloxane polymer composition, and a siloxane complex in an amount of about 2 percent by weight to about 7 percent by weight, based on the total weight of the siloxane polymer composition, the siloxane complex including a siloxane polymer with an introduced carboxylic acid and being represented by Formula 1 below,	12-02-2010
20110129781	Methods of forming a pattern using photoresist compositions - In a photoresist composition, methods of forming a pattern using the same, and methods of manufacturing a semiconductor device using the same A photoresist film may be formed on a substrate by coating a photoresist composition including a polymer and a solvent. The polymer includes a first repeating unit and a second repeating unit. The first repeating unit has a diazoketo group and a second repeating unit has a group containing silicon. A photoresist pattern is formed by partially exposing the photoresist film and developing the photoresist film. A pattern having an improved etching resistance and uniformity of critical dimension is formed.	06-02-2011

Kyoung-Mi Kim, Gyeonggi-Do KR

Patent application number	Description	Published
20080305636	METHOD OF FORMING FINE PATTERN EMPLOYING SELF-ALIGNED DOUBLE PATTERNING - There are provided a method of forming a fine pattern employing self-aligned double patterning. The method includes providing a substrate. First mask patterns are formed on the substrate. A reactive layer is formed on the substrate having the first mask patterns. The reactive layer adjacent to the first mask patterns is reacted using a chemical attachment process, thereby forming sacrificial layers along outer walls of the first mask patterns. The reactive layer that is not reacted is removed to expose the sacrificial layers. Second mask patterns are formed between the sacrificial layers adjacent to sidewalls of the first mask patterns facing each other. The sacrificial layers are removed to expose the first and second mask patterns and the substrate exposed between the first and second mask patterns. The substrate is etched using the first and second mask patterns as an etching mask.	12-11-2008

Kyoung-Mi Moon, Daiseong-Gun KR

Patent application number	Description	Published
20090101994	SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME - A semiconductor device and a method for fabricating the same are disclosed. The semiconductor device includes a semiconductor substrate having an active region and a device isolation region defining the active region, and a resistor string formed over the active region.	04-23-2009