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Kyoung-Kook Kim
Kyoung-Kook Kim, Gyeonggi-Do KR
| Patent application number | Description | Published |
|---|---|---|
| 20110018027 | Top-emitting light emitting diodes and methods of manufacturing thereof - Provided are a top-emitting nitride based light emitting device having an n-type clad layer, an active layer and a p-type clad layer sequentially stacked thereon, comprising an interface modification layer formed on the p-type clad layer and a transparent conductive thin film layer made up of a transparent conductive material formed on the interface modification layer; and a process for preparing the same. In accordance with the top-emitting nitride-based light emitting device of the present invention and a process for preparing the same, there are provided advantages such as improved ohmic contact with the p-type clad layer, leading to increased wire bonding efficiency and yield upon packaging the light emitting device, capability to improve luminous efficiency and life span of the device due to low specific contact resistance and excellent current-voltage properties. | 01-27-2011 |
| 20110086448 | Flip-chip light emitting diodes and method of manufacturing thereof - Provided are a flip-chip nitride-based light emitting device having an n-type clad layer, an active layer and a p-type clad layer sequentially stacked thereon, comprising a reflective layer formed on the p-type clad layer and at least one transparent conductive thin film layer made up of transparent conductive materials capable of inhibiting diffusion of materials constituting the reflective layer, interposed between the p-type clad layer and reflective layer; and a process for preparing the same. In accordance with the flip-chip nitride-based light emitting device of the present invention and a process for preparing the same, there are provided advantages such as improved ohmic contact properties with the p-type clad layer, leading to increased wire bonding efficiency and yield upon packaging the light emitting device, capability to improve luminous efficiency and life span of the device due to low specific contact resistance and excellent current-voltage properties. | 04-14-2011 |
Kyoung-Kook Kim, Yongin-Si KR
| Patent application number | Description | Published |
|---|---|---|
| 20100279448 | Method of manufacturing vertical light emitting device - Provided is a method of manufacturing a vertical light emitting device. The method of manufacturing the vertical light emitting device may include forming an emissive layer including a n-type semiconductor layer, an active layer, and a p-type semiconductor layer on a substrate, forming a first trench dividing the emissive layer into light emitting device units in which the emissive layer remains on the lower part of the first trench to a desired, or alternatively, a predetermined thickness, forming a passivation layer on the emissive layer, forming a p-type electrode on the p-type semiconductor layer of the emissive layer, forming a metal supporting layer on the passivation layer and the p-type electrode, removing the substrate, removing a remaining portion of the emissive layer when the surface of the emissive layer is exposed by removing the substrate, forming a n-type electrode on the n-type semiconductor layer of the emissive layer, and cutting the metal supporting layer to divide the emissive layer into the light emitting device units. | 11-04-2010 |
Kyoung-Kook Kim, Suwon-Si KR
| Patent application number | Description | Published |
|---|---|---|
| 20090146142 | Light-emitting device including nanorod and method of manufacturing the same - Provided are a light-emitting device including a plurality of nanorods each of which comprises an active layer formed between an n-type region and a p-type region, and a method of manufacturing the same. The light-emitting device comprises: a substrate; a first electrode layer formed on the substrate; a basal layer formed on the first electrode layer; a plurality of nanorods formed vertically on the basal layer, each of which comprises a bottom part doped with first type, a top part doped with second type opposite to the first type, and an active layer between the bottom part and the top part, an insulating region formed between the nanorods, and a second electrode layer formed on the nanorods and the insulating region. | 06-11-2009 |
| 20090252939 | Wafer structures and wafer bonding methods - Wafer structures and wafer bonding methods are provided. In some embodiments, a wafer bonding method includes providing a conductive wafer and a plurality of insulating wafers, the conductive wafer being larger than the insulating wafers; performing a pre-treatment operation on the conductive wafer, the insulating wafers, or both; and directly bonding the insulating wafers to the conductive wafer. | 10-08-2009 |
| 20090269869 | Multiple reflection layer electrode, compound semiconductor light emitting device having the same and methods of fabricating the same - Provided are a multiple reflection layer electrode, a compound semiconductor light emitting device having the same and methods of fabricating the same. The multiple reflection layer electrode may include a reflection layer on a p-type semiconductor layer, an APL (agglomeration protecting layer) on the reflection layer so as to prevent or retard agglomeration of the reflection layer, and a diffusion barrier between the reflection layer and the APL so as to retard diffusion of the APL. | 10-29-2009 |
| 20100123158 | Light emitting device and method of manufacturing the same - Provided is a light emitting diode (LED) manufactured by using a wafer bonding method and a method of manufacturing a LED by using a wafer bonding method. The wafer bonding method may include interposing a stress relaxation layer formed of a metal between a semiconductor layer and a bonding substrate. When the stress relaxation layer is used, stress between the bonding substrate and a growth substrate may be offset due to the flexibility of metal, and accordingly, bending or warpage of the bonding substrate may be reduced or prevented. | 05-20-2010 |
| 20100124798 | Method of manufacturing light emitting device - Provided is a method of manufacturing a light emitting device from a large-area bonding wafer by using a wafer bonding method using. The method may include forming a plurality of semiconductor layers, each having an active region for emitting light, on a plurality of growth substrates. The method may also include arranging the plurality of growth substrates on which the semiconductor layers are formed on one bonding substrate and simultaneously processing each of the semiconductor layers formed on each of the growth substrates through subsequent processes. The bonding wafer may be formed of a material that reduces or prevents bending or warping due to a difference of thermal expansion coefficients between a wafer material, such as sapphire, and a bonding wafer. According to the above method, because a plurality of wafers may be processed by one process, mass production of LEDs may be possible which may reduce manufacturing costs. | 05-20-2010 |
| 20100127238 | Light emitting diode - Example embodiments provide a light emitting diode (LED) having improved polarization characteristics. The LED may include wire grid polarizers on and below a light emitting unit. The wire grid polarizers may be arranged at an angle to each other. Thus, because the LED may emit a light beam in a given polarization direction, an expensive component, e.g., a dual brightness enhanced film (DBEF), is not required. Thus, manufacturing costs of a backlight unit including the LED and a display apparatus including the backlight unit may be reduced. | 05-27-2010 |
| 20100148825 | Semiconductor devices and methods of fabricating the same - Provided are a semiconductor device and a method of fabricating the semiconductor device. The semiconductor device may be a complementary device including a p-type oxide TFT and an n-type oxide TFT. The semiconductor device may be a logic device such as an inverter, a NAND device, or a NOR device. | 06-17-2010 |
Kyoung-Kook Kim, Siheung-Si KR
| Patent application number | Description | Published |
|---|---|---|
| 20090124030 | Nitride-Based Light-Emitting Device and Method of Manufacturing the Same - A nitride-based light-emitting device and a method of manufacturing the same. The light-emitting device includes a substrate, and an n-cladding layer, an active layer, a p-cladding layer, a grid cell layer and an ohmic contact layer sequentially formed on the substrate. The grid cell layer has separated, conducting particle type cells with a size of less than 30 micrometers buried in the ohmic contact layer. The nitride-based light-emitting device and the method of manufacturing the same improve the characteristics of ohmic contact on the p-cladding layer, thereby increasing luminous efficiency and life span of the device while simplifying a manufacturing process by omitting an activation process after wafer growth. | 05-14-2009 |
Kyoung-Kook Kim, Swangju KR
| Patent application number | Description | Published |
|---|---|---|
| 20080224165 | Top-Emitting Light Emitting Diodes and Methods of Manufacturing Thereof - Provided are a top-emitting nitride-based light emitting device having an n-type clad layer, an active layer and a p-type clad layer sequentially stacked thereon, comprising an interface modification layer formed on the p-type clad layer and a transparent conductive thin film layer made up of a transparent conductive material formed on the interface modification layer; and a process for preparing the same. In accordance with the top-emitting nitride-based light emitting device of the present invention and a process for preparing the same, there are provided advantages such as improved ohmic contact with the p-type clad layer, leading to increased wire bonding efficiency and yield upon packaging the light emitting device, capability to improve luminous efficiency and life span of the device due to low specific contact resistance and excellent current-voltage properties. | 09-18-2008 |