Patent application number | Description | Published |
20100330468 | HALFTONE MASK AND MANUFACTURING METHOD THEREOF AND METHOD FOR FORMING FILM USING THE SAME - Embodiments relate to halftone masks that can uniformly form the height of an underlying layer in two regions that are spaced apart from each other, a manufacturing method thereof, and a method for forming a film using the same. The halftone mask includes a first light blocking unit and a second light blocking unit, and a semi-transmitting unit that is disposed adjacent to the side of the second light blocking unit. The first and second light blocking units block light and are spaced apart from each other at a predetermined interval. The semi-transmitting unit is positioned at a side far from the first light blocking unit and reduces intensity of light. Sum of the second length of the second light blocking unit and the third length of the semi-transmitting unit is larger than the first length of the first blocking unit. | 12-30-2010 |
20110049523 | Organic light emitting diode display and method of manufacturing the same - An OLED display including a substrate main body; a first gate electrode and a second semiconductor layer; a gate insulating layer on the first gate electrode and the second semiconductor layer; a first semiconductor layer and a second gate electrode overlying the first gate electrode and the second semiconductor layer, respectively; etching stopper layers contacting portions of the first semiconductor layer; an interlayer insulating layer on the first semiconductor layer and the second gate electrode and including contact holes exposing the plurality of etching stopper layers, respectively; a first source electrode and a first drain electrode on the interlayer insulating layer and the contact holes being indirectly connected to the first semiconductor layer via the etching stopper layers or directly connected to the first semiconductor layer; and a second source electrode and a second drain electrode on the interlayer insulating layer being connected to the second semiconductor layer. | 03-03-2011 |
20110207268 | Thin Film Transistor, Method of Fabricating the Same and Organic Light Emitting Diode Display Device Having the Same - A thin film transistor which has improved characteristics, a method of fabricating the same, and an organic light emitting diode (OLED) display device having the same. The thin film transistor includes a substrate, a semiconductor layer disposed on the substrate and including a channel region, and source and drain regions, the channel region being doped with impurities, a thermal oxide layer disposed on the semiconductor layer, a silicon nitride layer disposed on the thermal oxide layer, a gate electrode disposed on the silicon nitride layer and corresponding to a predetermined region of the semiconductor layer, an interlayer insulating layer disposed on the entire surface of the substrate, and source and drain electrodes electrically connected with the semiconductor layer. | 08-25-2011 |
20120001185 | Organic Light Emitting Diode Display and Manufacturing Method Thereof - An organic light emitting diode display includes: a substrate having first and second regions; a first thin film transistor (TFT) including source and drain electrodes at the first region; a second TFT including source and drain electrodes at the second region; a protective layer on the first and second TFTs; a planarization layer pattern on the protective layer; a first pixel electrode electrically connected to the source electrode or the drain electrode of the first TFT through a first via contact hole through the protective layer; and a second pixel electrode electrically connected to the source electrode or the drain electrode of the second TFT through a second via contact hole formed through the protective layer and the planarization layer pattern, the planarization layer pattern corresponding to a shape of the second pixel electrode and located between the protective layer and the second pixel electrode. | 01-05-2012 |
Patent application number | Description | Published |
20080224143 | THIN FILM TRANSISTOR, ORGANIC LIGHT EMITTING DIODE DISPLAY DEVICE HAVING THE SAME, FLAT PANEL DISPLAY DEVICE, AND SEMICONDUCTOR DEVICE, AND METHODS OF FABRICATING THE SAME - A thin film transistor and a method of fabricating the same include: a semiconductor layer having a grain boundary disposed in a crystal growth direction and having a variation in height of a top surface of 15 nm or less formed by a thin beam directional crystallization method. Also, an organic light emitting diode (OLED) display device comprising the thin film transistor is provided and has excellent characteristics fabricated by a simple process. Also, a flat panel display device and a method of fabricating the same are provided and include: a polycrystalline silicon layer in a pixel region; and a polycrystalline silicon layer in a peripheral region formed by the thin beam directional crystallization method. Also, a semiconductor device and a method of fabricating the same include: an intrinsic region of a semiconductor layer in the photodiode region formed by the thin beam directional crystallization method. | 09-18-2008 |
20080251785 | Display device and method of fabricating the same - A display device includes a thin film transistor (TFT) on a substrate, the TFT including source/drain electrodes, a cover layer on the source/drain electrodes, and a light source including at least one electrode, the electrode being electrically connected to the source/drain electrodes of the TFT through the cover layer, wherein the cover layer includes a same material as the electrode of the light source. | 10-16-2008 |
20080295772 | CHEMICAL VAPOR DEPOSITION APPARATUS AND PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION APPARATUS - A chemical vapor deposition (CVD) apparatus and a plasma enhanced chemical vapor deposition (PECVD) apparatus that reduce the number of fine particles inside a chamber. The CVD and the PECVD apparatuses each include a chamber; a gas injection unit that injects a gas into the chamber; a gas exhaust unit that exhausts the gas to the outside of the chamber, and is positioned facing the gas injection unit; a film formation unit that incorporates a film formation region on which a film is formed from the gas, and is positioned between the gas injection unit and the gas exhaust unit; and a electrostatic induction unit, which is positioned around a region corresponding to the film formation region in order not to overlap with the film formation region, and is connected to a voltage source that is insulated from the chamber. | 12-04-2008 |
20090121231 | THIN FILM TRANSISTORS, METHOD OF FABRICATING THE SAME, AND ORGANIC LIGHT-EMITTING DIODE DEVICE USING THE SAME - Aspects of the invention relate to thin film transistors, a method of fabricating the same, and an organic light-emitting diode device using the same. A thin film transistor according to an aspect of the invention includes a semiconductor layer formed from polysilicon in which a grain size deviation is within a range of substantially ±10%. Accordingly, aspects of the invention can improve non-uniformity of image characteristics due to a non-uniform grain size in polysilicon produced by a sequential lateral solidification (SLS) crystallization process. | 05-14-2009 |
20090184632 | Thin film transistor, method of fabricating the same and organic light emitting diode display device having the same - A thin film transistor which has improved characteristics, a method of fabricating the same, and an organic light emitting diode (OLED) display device having the same. The thin film transistor includes a substrate, a semiconductor layer disposed on the substrate and including a channel region, and source and drain regions, the channel region being doped with impurities, a thermal oxide layer disposed on the semiconductor layer, a silicon nitride layer disposed on the thermal oxide layer, a gate electrode disposed on the silicon nitride layer and corresponding to a predetermined region of the semiconductor layer, an interlayer insulating layer disposed on the entire surface of the substrate, and source and drain electrodes electrically connected with the semiconductor layer. | 07-23-2009 |
20100001639 | ORGANIC LIGHT-EMITTING DISPLAY APPARATUS - An organic light-emitting display apparatus having a touch panel operation. The organic light-emitting display apparatus includes: a substrate; a display unit disposed on the substrate; an encapsulation substrate disposed above the display unit; a reflection layer formed on the substrate; and a photo sensor interposed between the reflection layer and the encapsulation substrate, and to detect light striking an object disposed on the encapsulation substrate. | 01-07-2010 |
20100148163 | ORGANIC LIGHT EMITTING DISPLAY APPARATUS - An organic light emitting display apparatus includes an organic light emitting diode, a photo sensor, and a light blocking portion. The light blocking portion is at at least a side of the photo sensor so that light emitted from the organic light emitting diode is not directly incident on the photo sensor. | 06-17-2010 |
20120064676 | METHOD OF FABRICATING THIN FILM TRANSISTOR - A thin film transistor includes a substrate, a semiconductor layer on the substrate, a thermal oxide layer on the semiconductor layer, a gate electrode on the thermal oxide layer, the gate electrode positioned to correspond to a channel region of the semiconductor layer, an interlayer insulating layer on the substrate, and source and drain electrodes electrically connected to the semiconductor layer. | 03-15-2012 |
20130149819 | THIN FILM TRANSISTORS, METHOD OF FABRICATING THE SAME, AND ORGANIC LIGHT-EMITTING DIODE DEVICE USING THE SAME - Aspects of the invention relate to thin film transistors, a method of fabricating the same, and an organic light-emitting diode device using the same. A thin film transistor according to an aspect of the invention includes a semiconductor layer formed from polysilicon in which a grain size deviation is within a range of substantially ±10%. Accordingly, aspects of the invention can improve non-uniformity of image characteristics due to a non-uniform grain size in polysilicon produced by a sequential lateral solidification (SLS) crystallization process. | 06-13-2013 |
Patent application number | Description | Published |
20130186339 | Dry Coating Apparatus - Provided is a dry coating apparatus for coating a coating material, i.e., deposition vapor (metal vapor) on a substrate (a steel strip). The dry coating apparatus includes a coating part disposed in a vacuum to coat deposition vapor generated through heating and evaporation of a supplied coating material onto a proceeding object to be coated and a heating source disposed in an atmosphere to heat and levitate the coating material in the coating part. | 07-25-2013 |
20130186524 | Al PLATING LAYER/Al-Mg PLATING LAYER MULTI-LAYERED STRUCTURE ALLOY PLATED STEEL SHEET HAVING EXCELLENT PLATING ADHESIVENESS AND CORROSION RESISTANCE, AND METHOD OF MANUFACTURING THE SAME - Provided is an aluminum (Al) plating layer/aluminum (Al)-magnesium (Mg) plating layer multi-layered structure alloy plated steel sheet having excellent plating adhesiveness and corrosion resistance, which is characterized in that the Al—Mg plating layer is formed on the Al plating layer. According to the present invention, corrosion resistance of an Al plated steel sheet is further improved by forming an Al—Mg alloy plating layer, and plating adhesiveness between plating layer and underlying steel sheet may be improved as well as excellent stability and practicality being realized. | 07-25-2013 |
20130199447 | Continuous Coating Apparatus - Provided is a continuous coating apparatus which can supply a liquid coating material (a molten metal) to a levitation-heating space through various paths, and can easily control a supply flow rate of the liquid coating material, and has a simplified structure. The continuous coating apparatus includes: a vacuum chamber unit through which a coating target passes; a levitation-heating unit disposed in the vacuum chamber unit and generating an evaporation vapor by vaporizing a supplied coating material; and a liquid coating material supply unit connected so that a liquid coating material is supplied to at least one of an upper portion and a lower portion of the levitation-heating unit, and communicating with the outside of the vacuum chamber unit. | 08-08-2013 |
20140124028 | SOLAR CELL SUBSTRATE, METHOD FOR MANUFACTURING SAME, AND SOLAR CELL USING SAME - One aspect of the present invention is a solar cell substrate, comprising: a lower substrate; and a lower electrode that is formed on the upper part of said lower substrate, wherein a metal diffusion-preventing film having at least one or two or more metal layers is included between said lower substrate and said lower electrode, and if two or more metal layers are formed, the metal layers adjoining each other can be different metals. Additionally, a solar cell, which is another aspect of the present invention, comprises: a lower substrate; and a lower electrode that is formed on the upper part of said lower substrate, wherein a metal diffusion-preventing film having at least one or two or more metal layers is included between said lower substrate and said lower electrode, and if two or more metal layers are formed, the metal layers adjoining each other comprise solar cell substrates which are of different metals; p-type light absorption layers formed on said solar cell substrates; n-type buffer layers formed on said light absorption layers; transparent windows formed on said buffer layers; and upper electrodes formed on said transparent windows. | 05-08-2014 |
20140130859 | SOLAR CELL SUBSTRATE AND SOLAR CELL USING SAME - The present invention relates to a solar cell substrate, and to a solar cell using same. The solar cell according to one embodiment of the present invention comprises: a lower substrate; and a lower electrode formed on the lower substrate. The lower electrode is formed of a Mo—X—Na three-component-system compound metal layer. Here, X may be one of Nb, Ni, Si, Ti, W, and Cr. The solar cell according to another embodiment of the present invention may comprise: a solar cell substrate including a lower substrate and a Mo—X—Na three-component-system compound metal layer that is a lower electrode formed on the lower substrate; a light-absorption layer formed on the solar cell substrate; a buffer layer formed on the light-absorption layer; a transparent window formed on the buffer layer; and an upper electrode formed on the transparent window. | 05-15-2014 |