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Kyoung
Chung Hie Kyoung, Gwangsan-Gu KR
| Patent application number | Description | Published |
|---|---|---|
| 20100078546 | OPTICAL MODULE AND OPTICAL SENSOR USING THE SAME AND METHOD FOR MANUFACTURING THEREOF - Provided are an optical module, an optical sensor using the optical module, and a method of manufacturing the optical module. The optical sensor includes: a semiconductor substrate having a plurality of optical paths; an optical glass substrate formed on the semiconductor substrate; a sample stage formed on the optical glass substrate; at least one sensor metal film formed on the sample stage, and sensing light by Surface Plasmon Resonance (SPR) to reflect the light at a pre-determined angle; a light source disposed on a lower surface of the semiconductor substrate, and emitting light having a specific wavelength toward one of the optical paths; a polarizing plate disposed between the semiconductor substrate and the light source, and polarizing the light emitted from the light source into transverse-magnetic light; a diffraction grating plate disposed between the semiconductor substrate and the optical glass substrate, and diffracting the polarized light at a specific angle to be incident on the sensor metal film; and at least one light receiver disposed on the lower surface of the semiconductor substrate, and detecting the light passed through at least one of the optical paths and reflected from the sensor metal film. According to the method, it is possible to manufacture an optical device having various functions. | 04-01-2010 |
Je Hong Kyoung, Seongnam KR
| Patent application number | Description | Published |
|---|---|---|
| 20110156836 | DUPLEXER DEVICE AND METHOD OF MANUFACTURING THE SAME - There is provided a duplexer device and a method of manufacturing the same. The duplexer device includes a substrate including a duplex circuit; first and second acoustic wave filter chips mounted on the substrate in a flip chip bonding manner and constituting an Rx (receiver) filter and a Tx (transmitter) filter, respectively; and a molding portion covering the first and second acoustic wave filter chips. The first and second acoustic wave filter chips are arranged by flip chip bonding, so there is no need for a separate protective structure so as to protect device functional portions of the chips. Accordingly, a compact product is realized and a manufacturing process is simplified. | 06-30-2011 |
Seobong Kyoung, Kyungki-Do KR
| Patent application number | Description | Published |
|---|---|---|
| 20100267117 | Bacteriophage Having Killing Activity Specific to Staphylococcus Aureus - The present invention relates to a novel bacteriophage, more precisely a novel bacteriophage having killing activity specific to | 10-21-2010 |
Yong-Koo Kyoung, Seoul KR
| Patent application number | Description | Published |
|---|---|---|
| 20100123198 | Semiconductor devices and methods of manufacturing the same - Provided are semiconductor devices having low resistance contacts and methods of manufacturing the same. One or more of the semiconductor devices include a substrate having first and second active regions; a P-channel field-effect transistor associated with the first active region and including at least one of the source and drain regions; a N-channel field-effect transistor associated with the second active region and including at least one of the source and drain regions; a first contact pad layer comprising silicon (Si) and SiGe epitaxial layers on the at least one of the source and drain regions of the P-channel field-effect transistor, the SiGe epitaxial layer being sequentially stacked on the Si epitaxial layer; a second contact pad layer comprising silicon (Si) and SiGe epitaxial layers on the at least one of the source and drain regions of the N-channel field-effect transistor, the SiGe epitaxial layer being sequentially stacked on the Si epitaxial layer; an interlayer insulating film formed on the P-channel and the N-channel field-effect transistors and including first and second contact holes, wherein the first contact hole includes a first lower region that exposes the SiGe epitaxial layer of the first contact pad layer and the second contact hole includes a second lower region that penetrates through the SiGe epitaxial layer of the second contact pad layer to expose the Si epitaxial layer of the second contact pad layer; first and second metal silicide films formed respectively in the first and second lower regions of the contact holes; and contact plugs formed on the first and second metal silicide films and filled in the first and second contact holes. | 05-20-2010 |
| 20100177566 | Non-volatile memory device having stacked structure, and memory card and electronic system including the same - Provided are a non-volatile memory devices having a stacked structure, and a memory card and a system including the same. A non-volatile memory device may include a substrate. A stacked NAND cell array may have at least one NAND set and each NAND set may include a plurality of NAND strings vertically stacked on the substrate. At least one signal line may be arranged on the substrate so as to be commonly coupled with the at least one NAND set. | 07-15-2010 |
| 20110001183 | Memory device and method of fabricating the same - A memory device and a method of fabricating the same are provided. The memory device includes a tunneling dielectric layer on a substrate, a charge storage layer on the tunneling dielectric layer, a blocking dielectric layer on the charge storage layer, the blocking dielectric layer including a first dielectric layer having silicon oxide, a second dielectric layer on the first dielectric layer and having aluminum silicate, and a third dielectric layer formed on the second dielectric layer and having aluminum oxide, and an upper electrode on the blocking dielectric layer. | 01-06-2011 |