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Kyouda, JP
Hideharu Kyouda, Koshi-Shi JP
| Patent application number | Description | Published |
|---|---|---|
| 20100330508 | DEVELOPING APPARATUS AND DEVELOPING METHOD - A developer nozzle is moved from a periphery of a wafer toward the central portion while an exposed substrate held at a spin chuck is being rotated about a vertical axis and while a developing solution is being discharged from the developer nozzle, and this way the developing solution is supplied to the surface of the wafer, the developer nozzle having a slit-like ejection port whose longitudinal direction is oriented to the direction perpendicular to the radial direction of the wafer. The movement speed of the nozzle is higher than a case where a nozzle with a small-diameter circular nozzle is used, and this enables a development time to be reduced. Further, the thickness of a developing solution on a substrate can be reduced, so that the developing solution can be saved. | 12-30-2010 |
| 20110127236 | DEVELOPING DEVICE AND DEVELOPING METHOD - The temperature of a developing solution is varied depending on the type of resist or the resist pattern. The developing solution is applied while scanning a developer nozzle having a slit-shaped ejection port that has a length matching the width of the effective area of the substrate. After leaving the substrate with the developing solution being coated thereon for a predetermined period of time, a diluent is supplied while scanning a diluent nozzle, thereby substantially stopping the development reaction and causing the dissolved resist components to diffuse. A desired amount of resist can be quickly dissolved through the control of the developing solution temperature, while the development can be stopped before the dissolved resist components exhibit adverse effect through the supply of the diluent a predetermined timing, whereby achieving a pattern having a uniform line width and improved throughput. | 06-02-2011 |
| 20110155693 | SUBSTRATE TREATMENT METHOD, COATING TREATMENT APPARATUS, AND SUBSTRATE TREATMENT SYSTEM - In the coating treatment apparatus, in a first treatment chamber, the front and rear surfaces of the substrate held by a transfer arm are inverted by a turning mechanism, and a coating solution is applied from a coating nozzle to the rear surface of the substrate. The substrate is transferred into a second treatment chamber, in which the coating solution on the rear surface is heated by a heating unit to cure, thereby forming a coating film on the rear surface of the substrate. The formation of the coating film by the coating treatment apparatus is performed before exposure processing, whereby the rear surface of the substrate can be flat for the exposure processing. | 06-30-2011 |
Hideharu Kyouda, Koshi City JP
| Patent application number | Description | Published |
|---|---|---|
| 20100232781 | Coating and developing apparatus, coating and developing method, and storage medium - A coating and developing apparatus has: a treatment block-including a water repellent module performing water repellent treatment on a substrate, a coating module, and a developing module; a substrate side-surface portion water repellent module for performing water repellent treatment on a side surface of a substrate; and a control unit controlling operations of the modules to execute steps of performing water repellent treatment at least on a side surface portion of a substrate and performing a first resist coating on an entire surface of the substrate; performing a first development after a first liquid-immersion exposure is performed; performing a second resist coating on the entire surface, and performing a second development after a second liquid-immersion exposure is performed, and further to execute a step of performing water repellent treatment on the side surface portion of the substrate after the first development and before the second exposure is performed. | 09-16-2010 |
Hideharu Kyouda, Kumamoto JP
| Patent application number | Description | Published |
|---|---|---|
| 20090004607 | Substrate Processing Method - A resist film is formed on a surface of a wafer. Then, a liquid layer used for irradiating the resist film with exposure light rays is formed from a liquid between an optical component facing the resist film and the surface of the wafer. The liquid is capable of transmitting the exposure light rays and has a function of cleaning a surface of the wafer and a surface of the optical component. Then, the resist film is irradiated with the exposure light rays projected from the optical component and transmitted through the liquid layer, to perform light exposure with a predetermined pattern on the resist film. Then, development is performed on the wafer after the light exposure, to form a predetermined pattern on the wafer. | 01-01-2009 |
| 20100073647 | COATING FILM FORMING APPARATUS AND COATING FILM FORMING METHOD FOR IMMERSION LIGHT EXPOSURE - A coating film forming apparatus for immersion light exposure, for forming a coating film including a resist film or a resist film and an additional film on a substrate to be fed to an immersion light exposure apparatus configured to perform a light exposure process through a liquid, includes: one or more coating units configured to apply the resist film or the resist film and the additional film onto the substrate; one or more thermally processing units configured to perform a thermal process necessary for forming the coating film on the substrate; a checking unit configured to check a state of the coating film at an edge portion of the substrate before the immersion light exposure; and a control section configured to use a check result obtained by the checking unit to make a judgment of whether or not the state of the coating film at the edge portion of the substrate is within an acceptable range, and to permit transfer of the substrate to the light exposure apparatus when the state of the coating film is within the acceptable range. | 03-25-2010 |
Hideharu Kyouda, Kumamoto-Ken JP
| Patent application number | Description | Published |
|---|---|---|
| 20090130614 | Development device and development method - A developer nozzle is moved from a periphery of a wafer toward the central portion while an exposed substrate held at a spin chuck is being rotated about a vertical axis and while a developing solution is being discharged from the developer nozzle, and this way the developing solution is supplied to the surface of the wafer, the developer nozzle having a slit-like ejection port whose longitudinal direction is oriented to the direction perpendicular to the radial direction of the wafer. The movement speed of the nozzle is higher than a case where a nozzle with a small-diameter circular nozzle is used, and this enables a development time to be reduced. Further, the thickness of a developing solution on a substrate can be reduced, so that the developing solution can be saved. | 05-21-2009 |
Takeshi Kyouda, Shiga JP
| Patent application number | Description | Published |
|---|---|---|
| 20090293934 | Photoelectric Conversion Device - A photoelectric conversion device in which a plurality of crystal semiconductor particles | 12-03-2009 |
Takuya Kyouda, Toyama JP
| Patent application number | Description | Published |
|---|---|---|
| 20100202095 | CASE MOLD TYPE CAPACITOR AND METHOD FOR MANUFACTURING THE SAME - The case mold type capacitor has a capacitor element, a pair of terminals, and molding resin. Each terminal of the pair is connected to a first electrode and a second electrode of the capacitor element, respectively. The capacitor element is embedded in the molding resin in a manner that a terminal section disposed at an end of each of terminals are partially exposed to outside. The molding resin has epoxy resin containing inorganic filler and a moisture absorbent mixed in the epoxy resin. | 08-12-2010 |
| 20100226065 | METALLIZATION FILM CAPACITOR - A metallization film capacitor that achieves both high heat resistance and high withstand voltage at the same time. A metal-deposited electrode is formed on a PEN film in each of a pair of metalized films. These metalized films are wound such that the metal-deposited electrodes face each other via the dielectric film in between. A metalized contact electrode is formed on both end faces of these wound metalized films to configure the metallization film capacitor. A divisional electrode is provided on the metal-deposited electrode. In addition, a fuse is coupled to this divisional electrode for providing a self-maintaining function. Pass rate a/b of a deposition pattern is set to 4.0 or smaller, where ‘a’ is the fuse width, and ‘b’ is the length of the divisional electrode in a lengthwise direction of the metalized films. | 09-09-2010 |