Patent application number | Description | Published |
20090321902 | SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF - The semiconductor device of the invention includes a transistor, an insulating layer provided over the transistor, a first conductive layer (corresponding to a source wire or a drain wire) electrically connected to a source region or a drain region of the transistor through an opening portion provided in the insulating layer, a first resin layer provided over the insulating layer and the first conductive layer, a layer containing conductive particles which is electrically connected to the first conductive layer through an opening portion provided in the first resin layer, and a substrate provided with a second resin layer and a second conductive layer serving as an antenna. In the semiconductor device having the above-described structure, the second conductive layer is electrically connected to the first conductive layer with the layer containing conductive particles interposed therebetween. In addition, the second resin layer is provided over the first resin layer. | 12-31-2009 |
20100236053 | APPARATUS AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE - The manufacturing apparatus of a semiconductor device includes a jig having a plurality of holders arranged in a row, a controller for controlling the pitch of the plurality of holders arranged in a row, a support means provided with a plurality of semiconductor integrated circuits, and a support means provided with a substrate having a plurality of elements. By mounting the semiconductor integrated circuits on the respective elements by using the jig having the plurality of holders arranged in a row, semiconductor devices are manufactured. | 09-23-2010 |
20120002349 | POWER STORAGE DEVICE, LITHIUM-ION SECONDARY BATTERY, ELECTRIC DOUBLE LAYER CAPACITOR AND LITHIUM-ION CAPACITOR - One object is to provide a power storage device including an electrolyte using a room-temperature ionic liquid which includes a univalent anion and a cyclic quaternary ammonium cation having excellent reduction resistance. Another object is to provide a high-performance power storage device. A room-temperature ionic liquid which includes a cyclic quaternary ammonium cation represented by a general formula (G1) below is used for an electrolyte of a power storage device. In the general formula (G1), one or two of R | 01-05-2012 |
20120241924 | SEMICONDUCTOR DEVICE HAVING ANTENNA AND METHOD FOR MANUFACTURING THEREOF - The present invention provides an antenna in that the adhesive intensity of a conductive body formed on a base film is increased, and a semiconductor device including the antenna. The invention further provides a semiconductor device with high reliability that is formed by attaching an element formation layer and an antenna, wherein the element formation layer is not damaged due to a structure of the antenna. The semiconductor device includes the element formation layer provided over a substrate and the antenna provided over the element formation layer. The element formation layer and the antenna are electrically connected. The antenna has a base film and a conductive body, wherein at least a part of the conductive body is embedded in the base film. As a method for embedding the conductive body in the base film, a depression is formed in the base film and the conductive body is formed therein. | 09-27-2012 |
20120308882 | IONIC LIQUID AND POWER STORAGE DEVICE INCLUDING THE SAME - An ionic liquid having high electrochemical stability and a low melting point. An ionic liquid represented by the following general formula (G0) is provided. | 12-06-2012 |
20120328960 | NONAQUEOUS SOLVENT AND POWER STORAGE DEVICE - A nonaqueous solvent having excellent reduction resistance, which can be applied to an electrolyte solution, is provided. Further, a nonaqueous solvent which can be used in a wide temperature range and applied to an electrolyte solution is provided. Furthermore, a high-performance power storage device is provided. A nonaqueous solvent containing at least an ionic liquid including an alicyclic quaternary ammonium cation having one or more substituents and a counter anion to the alicyclic quaternary ammonium cation, and a freezing-point depressant is provided. A power storage device including the nonaqueous solvent for an electrolyte solution is also provided. | 12-27-2012 |
20130334611 | SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF - The semiconductor device of the invention includes a transistor, an insulating layer provided over the transistor, a first conductive layer (corresponding to a source wire or a drain wire) electrically connected to a source region or a drain region of the transistor through an opening portion provided in the insulating layer, a first resin layer provided over the insulating layer and the first conductive layer, a layer containing conductive particles which is electrically connected to the first conductive layer through an opening portion provided in the first resin layer, and a substrate provided with a second resin layer and a second conductive layer serving as an antenna. In the semiconductor device having the above-described structure, the second conductive layer is electrically connected to the first conductive layer with the layer containing conductive particles interposed therebetween. In addition, the second resin layer is provided over the first resin layer. | 12-19-2013 |
20140342245 | POWER STORAGE DEVICE, LITHIUM-ION SECONDARY BATTERY, ELECTRIC DOUBLE LAYER CAPACITOR AND LITHIUM-ION CAPACITOR - One object is to provide a power storage device including an electrolyte using a room-temperature ionic liquid which includes a univalent anion and a cyclic quaternary ammonium cation having excellent reduction resistance. Another object is to provide a high-performance power storage device. A room-temperature ionic liquid which includes a cyclic quaternary ammonium cation represented by a general formula (G1) below is used for an electrolyte of a power storage device. In the general formula (G1), one or two of R | 11-20-2014 |