Patent application number | Description | Published |
20130134493 | VERTICAL CHANNEL MEMORY DEVICES WITH NONUNIFORM GATE ELECTRODES - A mold stack including alternating insulation layers and sacrificial layers is formed on a substrate. Vertical channel regions extending through the insulation layers and sacrificial layers of the mold stack are formed. Gate electrodes are formed between adjacent ones of the insulation layers and surrounding the vertical channel regions. The gate electrodes have a greater thickness at a first location near sidewalls of the insulation layers than at a second location further away from the sidewalls of the insulation layers. | 05-30-2013 |
20130145640 | APPARATUS AND METHODS FOR TREATING A SUBSTRATE - A substrate treatment apparatus is provided. The apparatus may include a process chamber configured to have an internal space, a substrate supporting member disposed in the process chamber to support a substrate, a first supplying port configured to supply a supercritical fluid to a region of the internal space located below the substrate, a second supplying port configured to supply a supercritical fluid to other region of the internal space located over the substrate, and an exhaust port configured to exhaust the supercritical fluid from the process chamber to an exterior region. | 06-13-2013 |
20140004676 | VERTICAL CHANNEL MEMORY DEVICES WITH NONUNIFORM GATE ELECTRODES AND METHODS OF FABRICATING THE SAME | 01-02-2014 |
20140262024 | SUBSTRATE TREATMENT SYSTEMS USING SUPERCRITICAL FLUID - Substrate treatment systems are provided. The substrate treatment systems may include a treating device configured to treat a substrate with a supercritical fluid, and a supplying device configured to supply the supercritical fluid to the treating device. The treating device may include a supercritical process zone in which the substrate is treated with the supercritical fluid, and a pre-supercritical process zone in which the supercritical fluid is expanded and then provided into the supercritical process zone to create a supercritical state in the supercritical process zone. | 09-18-2014 |