| Patent application number | Description | Published |
|---|
| 20090040883 | Magnetic track using magnetic domain wall movement and information storage device including the same - Provided are a magnetic track using magnetic domain wall movement and an information storage device including the same. A magnetic track may comprise a zigzag shaped storage track including a plurality of first magnetic layers in parallel with each other, and stacked separate from each other, and a plurality of second magnetic layers for connecting the plurality of first magnetic layers. The information storage device may include the magnetic track having a plurality of magnetic domains, current applying device connected to the magnetic track, and a read/write device on a middle portion of the magnetic track. | 02-12-2009 |
| 20090097365 | Magnetic layer, method of forming the magnetic layer, information storage device including the magnetic layer, and method of manufacturing the information storage device - Provided are a magnetic layer, a method of forming the magnetic layer, an information storage device, and a method of manufacturing the information storage device. The information storage device may include a magnetic track having a plurality of magnetic domains, a current supply element connected to the magnetic layer and a reading/writing element. The magnetic track includes a hard magnetic track, and the hard magnetic track has a magnetization easy-axis extending in a direction parallel to a width of the hard magnetic track. | 04-16-2009 |
| 20090109740 | Semiconductor device using magnetic domain wall movement - Provided may be a semiconductor device using magnetic domain wall movement. The semiconductor device may include a magnetic track having a plurality of magnetic domains and a thermal conductive insulating layer configured to contact the magnetic track. The thermal conductive insulating layer may prevent or reduce the magnetic track from being heated due to a current supplied to the magnetic track. | 04-30-2009 |
| 20090122596 | Semconductor memory device and method of programming the same - Provided are a semiconductor memory device and a method of programming the same. The semiconductor memory device includes a mode input value generating unit and a logic operating unit. The mode input value generating unit changes a connection state between input values of a current driving circuit so as to correspond to each of at least two operating modes, and defines a logic function of a magnetic memory cell connected to the current driving circuit in response to each operating mode. The logic operating unit performs a logic operation on the logic functions of at least two magnetic memory cells defined according to each of the operating modes and generates a result of logic operation. | 05-14-2009 |
| 20090180218 | Information storage devices using magnetic domain wall movement and methods of operating the same - An information storage device includes a magnetic layer configured to store information, a first and second conductive layer. The first conductive layer contacts a first end of the magnetic layer. The second conductive layer contacts a second end of the magnetic layer. The magnetic layer includes first and second pinning regions at which magnetic domain walls are pinned. The widths of the magnetic layer at the first and second pinning regions are different. | 07-16-2009 |
| 20100008130 | Method of operating magnetic random access memory device - Provided is a method of operating a magnetic random access memory device comprising a switch structure and a magnetoresistance structure. According to the method, current variation depending on the direction of the current can be reduced by controlling a gate voltage of the switch structure when supplying current to write data to the magnetoresistance structure. | 01-14-2010 |
| 20110080221 | Oscillators and methods of operating the same - An oscillator includes: a plurality of free layers and a non-magnetic layer disposed between the plurality of free layers. Each of the plurality of free layers has perpendicular magnetic anisotropy or in-plane magnetic anisotropy. Magnetization directions of the free layers are periodically switched such that a signal within a given frequency band oscillates. | 04-07-2011 |
| 20110122709 | Nonvolatile logic circuit, integrated circuit including the nonvolatile logic circuit, and method of operating the integrated circuit - A nonvolatile logic circuit includes a latch unit including a pair of first and second latch nodes; and a pair of first and second nonvolatile memory cells electrically connected to the first and second of latch nodes, respectively. A write operation is performed on the first and second nonvolatile memory cells according to a direction of a current flowing through the first and second nonvolatile memory cells when a write enable signal is activated. The direction of flow of current determined based on data on the respective first and second latch nodes, and a logic value written on the first nonvolatile memory cells is different from a logic value written on the second nonvolatile memory cell. | 05-26-2011 |
| 20110141803 | Magnetic tunnel junction devices, electronic devices including a magnetic tunneling junction device and methods of fabricating the same - Perpendicular magnetic tunnel junction (MTJ) devices, methods of fabricating a perpendicular MTJ device, electronic devices including a perpendicular MTJ device and methods of fabricating the electronic device are provided, the perpendicular MTJ devices include a pinned layer, a tunneling layer and a free layer. At least one of the pinned layer and the free layer includes a multi-layered structure including an amorphous perpendicular magnetic anisotropy (PMA) material. | 06-16-2011 |
| 20110149647 | Perpendicular magnetic tunnel junctions, magnetic devices including the same and method of manufacturing a perpendicular magnetic tunnel junction - Provided are a perpendicular magnetic tunnel junction (MTJ), a magnetic device including the same, and a method of manufacturing the MTJ, the perpendicular MTJ includes a lower magnetic layer; a tunnelling layer on the lower magnetic layer; and an upper magnetic layer on the tunnelling layer. One of the upper and lower magnetic layers includes a free magnetic layer that exhibits perpendicular magnetic anisotropy, wherein the magnetizing direction of the free magnetic layer is changed by a spin polarization current. A polarization enhancing layer (PEL) and an exchange blocking layer (EBL) are stacked between the tunnelling layer and the free magnetic layer. | 06-23-2011 |
| 20110157971 | Magnetic random access memories and methods of operating the same - A spin transfer torque magnetic random access memory (STT-MRAM) and includes: a memory cell and a reference cell configured to operate as a reference when data stored in the memory cell is read. The memory cell includes: a first magnetic tunneling junction (MTJ) element and a first transistor connected to the first MTJ element. The reference cell includes: second and third MTJ elements connected in parallel; and second and third transistors that are connected to the second and third MTJ elements, respectively. The STT-MRAM further includes a control circuit having a write circuit configured to supply write currents having opposite directions to the second and third MTJ elements. | 06-30-2011 |
