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Kwang-Ok Kim

Kwang-Ok Kim, Jeonju-Si KR

Patent application numberDescriptionPublished
20100135666CLOCK PHASE ALIGNING APPARATUS FOR BURST-MODE DATA - Disclosed is a clock phase aligning apparatus capable of synchronizing a clock signal in the middle of an upstream burst mode data bit in an optical line terminal of a passive optical network. The clock phase aligning apparatus effectively aligns a phase of a clock signal with a phase of data during an overhead period of burst mode packet data through an over-sampling scheme and a digital scheme. Burst mode data signals are subject to an over-sampling through a high speed continuous mode analog circuit and then converted into low speed parallel signals through a parallel conversion unit. Such low speed parallel signals are processed with respect to sampling patterns through a digital look-up scheme in a logic circuit device such that the phase of data is arranged with the phase of a clock signal during a limited bit stream specified in a burst mode preamble timing.06-03-2010
20110020002OPTICAL LINE TERMINAL, METHOD FOR OPERATING OPTICAL RECEPTION INTERFACE, AND METHOD FOR PROCESSING CONTINUOUS MODE SIGNAL OF OPTICAL LINE TERMINAL - An Optical Line Terminal (OLT) configuring a Passive Optical Network (PON) is provided. The OLT includes an optical transmitter that transmits an optical signal to Optical Network Units (ONUs) in a downstream direction, an optical receiver that includes general Continuous Mode (CM) signal processing elements to recover clocks and data from optical signals transmitted by ONUs in an upstream direction, and a controller that controls the ONUs such that the optical receiver continuously receives an optical signal. An OLT interface for receiving an optical signal can be implemented using the general CM signal processing elements.01-27-2011

Kwang-Ok Kim, Ichon-Shi KR

Patent application numberDescriptionPublished
20090263973FIN MASK AND METHOD FOR FABRICATING SADDLE TYPE FIN USING THE SAME - A fin mask for forming saddle type fins in each of active regions formed in an island shape having a certain size with a major axis and a minor axis includes a first fin mask of a line type, and a second fin mask of an island type, wherein the first fin mask and the second fin mask in combination expose saddle type fin regions and cover ends of the neighboring active regions along the major axis.10-22-2009
20100003802METHOD FOR FABRICATING FIN TRANSISTOR - A method for fabricating a fin transistor includes patterning a first pad layer provided over a substrate using an isolation mask, etching the substrate using the isolation mask and the first pad layer to form trenches, filling the trenches with an insulating material to form isolation structures, etching the isolation structures within the trenches using a gas having a high selectivity ratio of the insulating material to the first pad layer to form fin structures, forming a gate insulating layer over the fin structures, and forming a conductive layer over the gate insulating layer.01-07-2010
20110014792FIN MASK AND METHOD FOR FABRICATING SADDLE TYPE FIN USING THE SAME - A fin mask for forming saddle type fins in each of active regions formed in an island shape having a certain size with a major axis and a minor axis includes a first fin mask of a line type, and a second fin mask of an island type, wherein the first fin mask and the second fin mask in combination expose saddle type fin regions and cover ends of the neighboring active regions along the major axis.01-20-2011

Patent applications by Kwang-Ok Kim, Ichon-Shi KR

Kwang-Ok Kim, Jeollabuk-Do KR

Patent application numberDescriptionPublished
20100008379DYNAMIC BANDWIDTH ALLOCATION DEVICE FOR AN OPTICAL NETWORK AND METHOD THEREOF - A dynamic bandwidth allocation (DBA) device and a method thereof are provided. In the DBA method, the band allocation periods according to class queues and allocable bands with respect to each class queue are calculated on the basis of the service level agreement information and stored according to the service types in separate tables. The bandwidth allocation amount is calculated with respect to class queues which have the allocation periods by concurrently checking all the tables at each frame. The upward bandwidth usage efficiency is improved by calculating the final bandwidth allocation information from the service with a high priority order on the basis of the total allocable bandwidth of the corresponding frame. The upward bandwidth allocation amount can be calculated at each frame by reducing the processing speed in calculating the bandwidth allocation amount of each class queue. Accordingly, it is possible to effectively use the network.01-14-2010
20100221006APPARATUS AND METHOD FOR EFFICIENT BANDWIDTH ALLOCATION ON TIME DIVISION MULTIPLE ACCESS-BASED PASSIVE OPTICAL NETWORK (TDMA-PON) - Provided are an apparatus and method for efficiently and dynamically allocating a bandwidth on a Time Division Multiple Access-based Passive Optical Network (TDMA PON). The dynamic bandwidth allocation apparatus for uplink data transmission of a plurality of Optical Network Units (ONUs) including a plurality of class queues corresponding to Transmission Container (T-CONT) types, the plurality of ONUs connected to an Optical Line Terminal (OLT) on a Passive Optical Network (PON), includes: a class queue information storage unit storing information regarding a bandwidth allocation period and an allocatable bandwidth amount for each T-CONT type; an allocation check table unit checking the bandwidth allocation period for the T-CONT type received from the class queue information storage unit, and determining an allocatable bandwidth amount for the T-CONT type; and a bandwidth allocation unit allocating an uplink bandwidth to the T-CONT type with reference to the bandwidth allocation period and the allocatable bandwidth amount for the T-CONT type, and re-allocating to each ONU an uplink bandwidth remaining after allocating a total uplink bandwidths to all T-CONT types.09-02-2010
20100260498OPTICAL NETWORK TERMINAL OF THE GIGABIT PASSIVE OPTICAL NETWORK AND FRAME TREATMENT METHOD OF THE ONT - A gigabit passive optical network (GPON) system for fiber to the home (FTTH) service must provide a down-stream data rate of an optical band to provide IPTV service with hundreds of channels to subscribers, and must be able to provide an upstream data rate of an optical band using a currently available BM-IC chip. A currently available BM-IC chip for a GPON has 1.244 Gbps and 2.488 Gbps modes. Accordingly, an optical network terminal (ONT) for a GPON that is capable of providing a downstream transmission band of 10-Gbps and an upstream transmission band of 1.244 Gbps or 2.488 Gbps, and a method for processing an upstream frame in the terminal, are provided. The GPON ONT can provide 20 Mbps, high-definition IPTV service with 500 channels and can provide both upstream data rates of 1.244 Gbps and 2.488 Gbps according to a user's selection without using an additional device.10-14-2010
20100272259METHOD FOR FILTERING OF ABNORMAL ONT WITH SAME SERIAL NUMBER IN A GPON SYSTEM - Disclosed is a method of registering only an authorized optical network terminal among a plurality of optical network terminals with the same serial number, in an optical line terminal, using a public key encryption algorithm, in a Gigabit Passive Optical Network (GPON). According to an exemplary aspect, a GPON system encrypts a physical layer OAM message transmitted/received for serial number registration of an optical network terminal, using a key distributed according to a public key encryption algorithm, and authenticates registration of the optical network terminal using the encrypted physical layer OAM message. Accordingly, it is possible to securely authenticate registration of an authorized optical network terminal and block registration of unauthorized optical network terminals.10-28-2010
20110135306APPARATUS AND METHOD FOR RELAYING IN GIGABIT PASSIVE OPTICAL NETWORK - A relaying method of an optical signal of a hybrid relaying apparatus in a gigabit passive optical element includes: selecting and receiving any one of a first serial electrical signal corresponding to a downlink wavelength division multiplexing-passive optical line terminal (WDM-PON OLT) optical signal and a second serial electrical signal corresponding to a downlink gigabit passive optical network optical line terminal (GPON OLT) optical signal; modulating the downlink serial electrical signal to a downlink GPON transmission convergence (GTC) frame; extracting control information for uplink transmission from the downlink GTC frame; converting the downlink GTC frame into the downlink serial electrical signal; and converting the converted serial electrical signal into an optical signal and transmitting the converted optical signal in a GPON OLT optical transceiver.06-09-2011

Patent applications by Kwang-Ok Kim, Jeollabuk-Do KR

Kwang-Ok Kim, Kyoungki-Do KR

Patent application numberDescriptionPublished
20100055616METHOD FOR FABRICATING SADDLE TYPE FIN TRANSISTOR - A method for fabricating a saddle type fin transistor includes: preparing a substrate where a device isolation structure is already formed; forming a hard mask pattern over the substrate, the hard mask pattern including a coating layer obtained through a coating method; and performing an etching process using the hard mask pattern as an etch mask to form a saddle type fin. The hard mask pattern may be formed in a stack structure including an amorphous carbon layer and the coating layer.03-04-2010

Kwang-Ok Kim, Icheon-Si KR

Patent application numberDescriptionPublished
20090242974SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME - A semiconductor device includes a plurality of trench patterns formed over a substrate; gate insulation layers formed over sidewalls of the trench patterns; gate electrodes formed over the trench patterns; line patterns coupling the gate electrodes; and source and drain regions formed in upper and lower portions of the substrate adjacent to the sidewalls of the trench patterns.10-01-2009
20090289297CHARGE TRAP-TYPE NON-VOLATILE MEMORY DEVICE AND METHOD OF FABRICATING THE SAME - A charge trap-type non-volatile memory device, and related method, includes forming over a substrate a tunnel insulating layer, a charge trapping layer, a dielectric layer, and a conductive layer for a gate electrode; forming a gate electrode by selectively etching the conductive layer for the gate electrode; forming a spacer including a first spacer and a second spacer on a sidewall of the gate electrode, the second spacer being formed of material different from that of the first spacer; and etching the dielectric layer and the charge trapping layer by using the spacer as an etching barrier, thereby preventing an attack to the gate electrode when etching the charge trapping layer and thus enhancing reliability and stability of transistors. In addition, in one or more embodiments, a sidewall of the charge trapping layer pattern is formed vertically, thereby preventing formation of a tail and an attack to the substrate.11-26-2009