| Patent application number | Description | Published |
|---|
| 20080241559 | Dendrimer having metallocene core, organic memory device using the same and manufacturing method thereof - Disclosed herein is a dendrimer, in which metallocene, which is an oxidation-reduction material, is located at a core, and a conjugated dendron is connected to the metallocene core by a linker compound, an organic active layer having the dendrimer, an organic memory device having the organic active layer and a method of manufacturing the organic active layer and the organic memory device. The organic memory device manufactured using a dendrimer having a metallocene core of example embodiments may have a shorter switching time, decreased operation voltage, decreased manufacturing cost and increased reliability, thereby realizing a highly-integrated large-capacity memory device. | 10-02-2008 |
| 20080248330 | Dendrimer with triphenylamine core, organic memory device having the same, and manufacturing method thereof - A dendrimer according to example embodiments may include a triphenylamine core, wherein a conjugated dendron having no heteroatoms is coupled to the triphenylamine core. An organic memory device according to example embodiments may include an organic active layer between a first electrode and a second electrode, wherein the organic active layer includes the dendrimer according to example embodiments. A barrier layer may be provided between the first and second electrodes. A method of manufacturing the organic memory device according to example embodiments may include forming an organic active layer between a first electrode and a second electrode, the organic active layer including the dendrimer according to example embodiments. | 10-09-2008 |
| 20080284971 | FLEXIBLE SUBSTRATE FOR DISPLAY DEVICE AND DISPLAY DEVICE USING THE SAME - The present disclosure relates to a flexible substrate for a display device including a plastic layer containing a woven glass fiber, a metal film coated on either both side surfaces or one surface of the plastic layer, and an overcoating layer formed on one surface of the metal film wherein the overcoating layer is on the side of the metal film opposite from the plastic layer, and to a display device using the flexible substrate. The flexible substrate is thin, and has small thermal expansion coefficient, excellent flexibility, heat resistance, gas permeability resistance and moisture blocking property. The flexible substrate can be used in various display devices such as a TV, a notebook computer, a cellular phone, or an electronic paper. | 11-20-2008 |
| 20090252975 | PROTECTIVE FILM AND ENCAPSULATION MATERIAL COMPRISING THE SAME - Disclosed herein is a protective film. The protective film is produced by alternate coating of a polysilazane-based polymer and a flexible polysiloxane-based polymer. The polysilazane-based polymer is cured at low temperature to form silica, thereby achieving high hardness and high light transmittance. The protective film has improved interfacial adhesion between the respective coating films, which prevents permeation of moisture and oxygen. In addition, the protective film can be easily produced by low-temperature wet processes. Also disclosed herein is an encapsulation material comprising the protective film. | 10-08-2009 |
| 20090258237 | GRADED COMPOSITION ENCAPSULATION THIN FILM COMPRISING ANCHORING LAYER AND METHOD OF FABRICATING THE SAME - Disclosed herein is a graded composition encapsulation thin film and a fabrication method thereof. The encapsulation thin film comprises a substrate, a graded composition layer and an anchoring layer interposed therebetween. The anchoring layer serves to improve the adhesion between the graded composition layer and the substrate and creates advantageous conditions for the formation of the graded composition layer. Due to the presence of the anchoring layer, the encapsulation thin film has excellent barrier properties against the permeation of moisture and oxygen and is highly resistant to diffusion of other chemical species. | 10-15-2009 |
| 20090305062 | METHOD FOR FABRICATING MULTILAYERED ENCAPSULATION THIN FILM HAVING OPTICAL FUNCTIONALITY AND MUTILAYERED ENCAPSULATION THIN FILM FABRICATED BY THE SAME - A method for fabrication of a multilayered encapsulation thin film having optical functionality and a multilayered encapsulation thin film fabricated thereof includes a reactive or a non-reactive PVD process using a physical vapor deposition device containing multiple targets in a vacuum chamber is conducted or the above processes are alternately conducted such that the multilayered encapsulation thin film consisting of multiple layers with different densities and refractive indexes may be easily fabricated. In addition, the multilayered encapsulation thin film fabricated by the same has superior ability for inhibiting moisture and/or oxygen penetration sufficient to be used as an encapsulation material, controls a refractive index distribution for multiple layers in fabrication of a multilayered thin film so as to function as an anti-reflection film, and improves light output of a device. | 12-10-2009 |
| 20100021691 | THIN LAYER HAVING COMPOSITION GRADIENT AND PRODUCTION METHOD THEREOF - Disclosed herein are a thin layer having a composition gradient and a method for the production of the thin layer. According to the method, the thin layer is produced by subjecting a mixture of one or more organic materials and one or more inorganic materials to a sol-gel process. The composition gradient and the surface energy of the thin layer are controlled during production, leaving no interfacial failure defects. | 01-28-2010 |
| 20100112270 | MULTILAYER FILM, METHOD FOR MANUFACTURE THEREOF AND ARTICLES INCLUDING THE SAME - A multilayer film is provided. The multilayer film includes a barrier layer and an adhesive layer underlying the barrier layer. The adhesive layer contains a block copolymer that can phase separate into two or more different domains. The multilayer film has good gas and moisture barrier properties and is highly flexible. Therefore, the multilayer film can be effectively used in manufacturing encapsulation structures for electronic devices. In addition, the multilayer film is suitable for use as a substrate for a device. Further provided are a method for producing the multilayer film and an encapsulation structure including the multilayer film. | 05-06-2010 |
| 20100117110 | Photosensitive Quantum Dot, Composition Comprising the Same and Method of Forming Quantum Dot-Containing Pattern Using the Composition - A photosensitive quantum dot including a quantum dot, and a plurality of photosensitive moieties that are bound to a surface of the quantum dot, wherein each of the photosensitive moieties includes silicon (Si) and a photosensitive functional group. Also disclosed are a composition for forming a quantum dot-containing pattern, where the composition includes the photosensitive quantum dot, and a method of forming a quantum dot-containing pattern using the composition. | 05-13-2010 |
| 20100117522 | ORGANIC MATERIAL, FILM COMPRISING THE SAME AND ELECTRIC DEVICE COMPRISING THE FILM - An organic material including a hydrophilic polymer and an organic moiety having a hydroxyl substituted C | 05-13-2010 |
| 20100119976 | COMPOSITION FOR RADICAL POLYMERIZATION AND METHOD OF FORMING PATTERN USING THE COMPOSITION - A composition for radical polymerization includes a photosensitive material, a photoinitiator, a solvent, and a material for adjusting a size of a pattern. A method of forming a pattern using the composition is also disclosed. | 05-13-2010 |
| 20100261821 | DISPERSIBLE CARBON NANOTUBE, CARBON NANOTUBE-POLYMER COMPOSITE AND METHOD OF MANUFACTURING THE CARBON NANOTUBE-POLYMER COMPOSITE - A dispersible carbon nanotube (“CNT”) comprising a CNT backbone and an organic moiety attached to the carbon nanotube backbone and comprising a hydroxyl substituted C | 10-14-2010 |
| 20100276683 | Oxide semiconductor and thin film transistor including the same - Provided are an oxide semiconductor and an oxide thin film transistor including the oxide semiconductor. The oxide semiconductor may be formed of an indium (In)-zinc (Zn) oxide in which hafnium (Hf) is contained, wherein In, Zn, and Hf are contained in predetermined or given composition ratios. | 11-04-2010 |
| 20100321279 | Transistor, electronic device including a transistor and methods of manufacturing the same - Disclosed are a transistor, an electronic device and methods of manufacturing the same, the transistor including a photo relaxation layer between a channel layer and a gate insulating layer in order to suppress characteristic variations of the transistor due to light. The photo relaxation layer may be a layer of a material capable of suppressing variations in a threshold voltage of the transistor due to light. The photo relaxation layer may contain a metal oxide such as aluminum (Al) oxide. The channel layer may contain an oxide semiconductor. | 12-23-2010 |
| 20110127518 | Transistor, method of manufacturing the transistor and electronic device including the transistor - Provided are a transistor, a method of manufacturing the transistor, and an electronic device including the transistor. The transistor may include a passivation layer on a channel layer, a source, a drain, and a gate, wherein the component of the passivation layer is varied in a height direction. The passivation layer may have a multi-layer structure including a silicon oxide layer, a silicon oxynitride layer, and a silicon nitride layer sequentially stacked. The channel layer may include an oxide semiconductor. | 06-02-2011 |
