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Kutney
Gerry Kutney, Mississauga CA
| Patent application number | Description | Published |
|---|---|---|
| 20080206126 | Higher than 30% concentration lime slurries, preparation and uses thereof - The present invention relates to a composition comprising water, more than 30% w/w of calcium hydroxide, and >0.2% w/w dispersant. A process for preparing such a composition is also disclosed. The composition which can be in the form of a 45-55% concentration lime slurry is particularly useful for converting concentrated ammonium lignosulfonate into calcium lignosulfonate, for converting ammonium lignosulfonate into low sulfate calcium, potassium, sodium, or magnesium lignosulfonate and mixtures thereof, for removing soluble sulfate from concentrated sodium, potassium, ammonium or magnesium lignosulfonate or for treating a weak liquor obtained from the pulp and paper industry. | 08-28-2008 |
Michael C. Kutney, Santa Clara, CA US
| Patent application number | Description | Published |
|---|---|---|
| 20090250169 | LOWER LINER WITH INTEGRATED FLOW EQUALIZER AND IMPROVED CONDUCTANCE - A plasma processing chamber has a lower liner with an integrated flow equalizer. In an etching process, the processing gases may be unevenly drawn from the processing chamber which may cause an uneven etching of the substrate. The integrated flow equalizer is configured to equalize the flow of the processing gases evacuated from the chamber via the lower liner. | 10-08-2009 |
| 20100065213 | ETCHING CHAMBER HAVING FLOW EQUALIZER AND LOWER LINER - A plasma processing chamber having a lowered flow equalizer and a lower chamber liner. In an etching process, the processing gases may be unevenly drawn from the processing chamber which may cause an uneven etching of the substrate. By equalizing the flow of the processing gases evacuated from the chamber, a more uniform etching may occur. By electrically coupling the flow equalizer to the chamber liners, the RF return path from the flow equalizer may run along the chamber liners and hence, reduce the amount of plasma drawn below the substrate during processing. | 03-18-2010 |
Michael Charles Kutney, Santa Clara, CA US
| Patent application number | Description | Published |
|---|---|---|
| 20090250335 | Method of controlling plasma distribution uniformity by superposition of different constant solenoid fields - A method for processing a workpiece in a plasma reactor having a set of n coils includes constructing, for each one of the n coils, a set of plasma distributions for discrete values of coil current in a predetermined current range. The distributions are grouped, each group having one distribution for each of the n coils, and being a unique set of n distributions. A combined plasma distribution is computed from each group of distributions. The variance of each combined distribution is computed. The method further includes finding an optimum one of the combined distributions having an at least nearly minimum variance, and identifying the n coil currents associated with the optimum distribution. During plasma processing of the workpiece, currents through the coils are maintained at levels corresponding to the n coil currents associated with the one combined distribution. | 10-08-2009 |
| 20090250432 | Method of controlling plasma distribution uniformity by time-weighted superposition of different solenoid fields - A method of processing a workpiece in a chamber of a plasma reactor having a set of plural electromagnet coils includes selecting plural predetermined plasma density distributions relative to a workpiece surface, the predetermined plasma density distributions corresponding to different sets of D.C. currents in the coils, and flowing a process gas into the chamber and generating a plasma in the chamber. The method further includes switching plasma in the chamber between the predetermined plasma density distributions by switching D.C. currents through the coils between the different sets of D.C. currents. | 10-08-2009 |
| 20110006038 | PLASMA PROCESSING CHAMBER WITH ENHANCED GAS DELIVERY - A method and apparatus for providing flow into a processing chamber are provided. In one embodiment, a vacuum processing chamber is provided that includes a substrate support pedestal disposed in an interior volume of a chamber body, a lid enclosing the interior volume, a gas distribution plate positioned below the lid and above the substrate support pedestal, and a vortex inducing gas inlet oriented to induce a vortex of gas circulating in a plenum around a center line of the chamber body prior to the gas passing through the gas distribution plate. | 01-13-2011 |