Patent application number | Description | Published |
20140127597 | METHOD OF OPERATING HYDROGEN GENERATOR AND METHOD OF OPERATING FUEL CELL SYSTEM - A method of operating a hydrogen generator includes: a step (a) of generating a hydrogen-containing gas by a hydrogen generation unit by using a raw material in the hydrogen generation unit; a step (b) of removing a sulfur compound from the raw material by a hydrodesulfurizer which is heated by heat transferred from the hydrogen generation unit; and a step (c) of performing an operation of supplying the raw material to the hydrogen generation unit after stopping the generating of the hydrogen-containing gas by the hydrogen generation unit. The step (c) is not performed unless, at least, a temperature of the hydrodesulfurizer is such a temperature at which carbon deposition from the raw material is suppressed. | 05-08-2014 |
20140212775 | HYDROGEN GENERATOR AND FUEL CELL SYSTEM - A hydrogen generator includes a reformer configured to cause a reforming reaction using a material and steam to generate a hydrogen-containing gas; a shift converter configured to reduce CO in the hydrogen-containing gas by a shift reaction; an evaporator provided adjacent to the shift converter so as to perform heat exchange with an upstream side of the shift converter and configured to evaporate water; and a hydro-desulfurizer provided adjacent to the shift converter so as to perform heat exchange with a downstream side of the shift converter and configured to remove a sulfur compound in the material by a hydrodesulfurization reaction. | 07-31-2014 |
20150044583 | HYDROGEN PURIFIER, HYDROGEN GENERATION APPARATUS, AND FUEL CELL SYSTEM - A hydrogen purifier includes: a CO remover configured to reduce carbon monoxide in a hydrogen-containing gas through an oxidation reaction, the hydrogen-containing gas containing ammonia and carbon monoxide; and an ammonia remover provided upstream from the CO remover, the ammonia remover being configured to cause a reaction between ammonia in the hydrogen-containing gas and oxygen by using a catalyst to decompose the ammonia. | 02-12-2015 |
20150155575 | FUEL CELL SYSTEM AND METHOD OF OPERATING FUEL CELL SYSTEM - A fuel cell system includes: a fuel cell configured to generate electric power by using a hydrogen-containing gas; a catalyst, which reacts with an oxidizing gas by oxidation; an oxidizing gas supply device configured to supply the oxidizing gas to the catalyst; and a controller configured to control, before removal of the catalyst to outside, the oxidizing gas supply device to perform an oxidizing process of oxidizing the catalyst. | 06-04-2015 |
Patent application number | Description | Published |
20100200193 | COOLING DEVICE AND CONSTRUCTION MACHINE OR WORKING MACHINE EQUIPPED WITH THE SAME - A cooling device includes: a cooling fan; a shroud provided at an outer circumferential side of the cooling fan; and a ring having an inner circumferential wall and an outer circumferential wall. The inner circumferential wall is provided on the shroud and adjacent to an outer circumference of the cooling fan. The outer circumferential wall surrounds the inner circumferential wall, and an air-flow-direction downstream side end of the outer circumferential wall is positioned at a further downstream position in an air flow direction than an air-flow-direction downstream side end of the inner circumferential wall. An air-flow-direction downstream side end of an outer circumferential edge of the cooling fan is positioned at a further downstream position in the air flow direction than the air-flow-direction downstream side end of the inner circumferential wall. | 08-12-2010 |
20100200194 | COOLING DEVICE AND CONSTRUCTION MACHINE OR WORKING MACHINE EQUIPPED WITH THE SAME - A cooling device includes: a cooling fan; a shroud provided at an outer circumferential side of the cooling fan; an inner circumferential wall provided on the shroud and adjacent to the outer circumference of the cooling fan; and an outer circumferential wall provided to surround the inner circumferential wall. An air-flow-direction downstream side end of the outer circumferential wall is positioned at a further downstream position in an air flow direction than an air-flow-direction downstream side end of the inner circumferential wall. An air-flow-direction downstream side end of the cooling fan is positioned at a further downstream position than the air-flow-direction downstream side end of the inner circumferential wall. A ratio between a length of the outer circumferential wall and a length of the inner circumferential wall in the air flow direction is 1.07 or more and 1.81 or less, and a width between the outer circumferential wall and the inner circumferential wall is 15 mm or more and 55 mm or less. | 08-12-2010 |
20100206525 | COOLING DEVICE AND CONSTRUCTION MACHINE OR WORKING MACHINE EQUIPPED WITH THE SAME - A cooling device includes: a cooling fan; a shroud provided at an outer circumferential side of the cooling fan; an inner circumferential wall provided on the shroud and adjacent to the outer circumference of the cooling fan so as to surround the cooling fan; an outer circumferential wall provided to surround the inner circumferential wall. An air-flow-direction downstream side end of the outer circumferential wall is positioned at a further downstream position in an air flow direction than an air-flow-direction downstream side end of the inner circumferential wall. The cooling fan is rotatable within a space provided on a radially inner side of the inner circumferential wall. The air-flow-direction downstream side end of the outer circumferential wall is provided at a further upstream position in the air flow direction than an air-flow-direction downstream side end of the cooling fan. | 08-19-2010 |
20100206526 | COOLING DEVICE AND CONSTRUCTION MACHINE OR WORKING MACHINE EQUIPPED WITH THE SAME - A cooling device includes: a cooling fan; a shroud provided at an outer circumferential side of the cooling fan; an inner circumferential wall provided on the shroud and adjacent to the outer circumference of the cooling fan; and an outer circumferential wall provided to surround the inner circumferential wall. An air-flow-direction downstream side end of an outer circumferential edge of the cooling fan is positioned at a further downstream position in an air flow direction than an air-flow-direction downstream side end of the inner circumferential wall. An angle between: an line connecting the air-flow-direction downstream side end of the inner circumferential wall to the air-flow-direction downstream side end of the outer circumferential wall in cross section along the air flow direction of the inner circumferential wall and the outer circumferential wall; and a line orthogonal to the air flow direction, is 9 degrees or more and 45 degrees or less. | 08-19-2010 |
Patent application number | Description | Published |
20090035922 | SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF - There are provided a structure of a semiconductor device in which low power consumption is realized even in a case where a size of a display region is increased to be a large size screen and a manufacturing method thereof. A gate electrode in a pixel portion is formed as a three layered structure of a material film containing mainly W, a material film containing mainly Al, and a material film containing mainly Ti to reduce a wiring resistance. A wiring is etched using an IPC etching apparatus. The gate electrode has a taper shape and the width of a region which becomes the taper shape is set to be 1 μm or more. | 02-05-2009 |
20100155732 | Semiconductor Device and Manufacturing Method Thereof - It is an object of the present invention to provide a manufacturing method of semiconductor device whereby the number of processes is decreased due to simultaneously forming a contact hole in a lamination film of different material and film thickness (inorganic insulating film and organic resin film) by conducting etching once. By setting the selective ratio of dry etching (etching rate of organic resin film 503/etching rate of inorganic insulating film 502 containing nitrogen) from 1.6 to 2.9, preferably 1.9, the shape and the size of the contact holes to be formed even in a film of different material and film thickness can be nearly the same in both of the contact holes. | 06-24-2010 |
20110024757 | Semiconductor Device and Fabrication Method Thereof - For forming a gate electrode, a conductive film with low resistance including Al or a material containing Al as its main component and a conductive film with low contact resistance for preventing diffusion of Al into a semiconductor layer are laminated, and the gate electrode is fabricated by using an apparatus which is capable of performing etching treatment at high speed. | 02-03-2011 |
20110210336 | Semiconductor Device and Fabrication Method Thereof - For forming a gate electrode, a conductive film with low resistance including Al or a material containing Al as its main component and a conductive film with low contact resistance for preventing diffusion of Al into a semiconductor layer are laminated, and the gate electrode is fabricated by using an apparatus which is capable of performing etching treatment at high speed. | 09-01-2011 |
20120043580 | Semiconductor Device and Manufacturing Method Thereof - There are provided a structure of a semiconductor device in which low power consumption is realized even in a case where a size of a display region is increased to be a large size screen and a manufacturing method thereof. A gate electrode in a pixel portion is formed as a three layered structure of a material film containing mainly W, a material film containing mainly Al, and a material film containing mainly Ti to reduce a wiring resistance. A wiring is etched using an IPC etching apparatus. The gate electrode has a taper shape and the width of a region which becomes the taper shape is set to be 1 μm or more. | 02-23-2012 |
20120264245 | SEMICONDUCTOR DEVICE AND FABRICATION METHOD THEREOF - For forming a gate electrode, a conductive film with low resistance including Al or a material containing Al as its main component and a conductive film with low contact resistance for preventing diffusion of Al into a semiconductor layer are laminated, and the gate electrode is fabricated by using an apparatus which is capable of performing etching treatment at high speed. | 10-18-2012 |
20130252385 | SEMICONDUCTOR DEVICE AND FABRICATION METHOD THEREOF - For forming a gate electrode, a conductive film with low resistance including Al or a material containing Al as its main component and a conductive film with low contact resistance for preventing diffusion of Al into a semiconductor layer are laminated, and the gate electrode is fabricated by using an apparatus which is capable of performing etching treatment at high speed. | 09-26-2013 |
20140256116 | Semiconductor Device and Manufacturing Method Thereof - There are provided a structure of a semiconductor device in which low power consumption is realized even in a case where a size of a display region is increased to be a large size screen and a manufacturing method thereof. A gate electrode in a pixel portion is formed as a three layered structure of a material film containing mainly W, a material film containing mainly Al, and a material film containing mainly Ti to reduce a wiring resistance. A wiring is etched using an IPC etching apparatus. The gate electrode has a taper shape and the width of a region which becomes the taper shape is set to be 1 μm or more. | 09-11-2014 |
20150099333 | SEMICONDUCTOR DEVICE AND FABRICATION METHOD THEREOF - For forming a gate electrode, a conductive film with low resistance including Al or a material containing Al as its main component and a conductive film with low contact resistance for preventing diffusion of Al into a semiconductor layer are laminated, and the gate electrode is fabricated by using an apparatus which is capable of performing etching treatment at high speed. | 04-09-2015 |
Patent application number | Description | Published |
20090050888 | Semiconductor device and manufacturing method thereof - The present invention has an object to provide an active-matrix liquid crystal display device that realizes the improvement in productivity as well as in yield. In the present invention, a laminate film comprising the conductive film comprising metallic material and the second amorphous semiconductor film containing an impurity element of one conductivity type and the amorphous semiconductor film is selectively etched with the same etching gas to form a side edge of the first amorphous semiconductor film | 02-26-2009 |
20100200855 | SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF - The present invention has an object to provide an active-matrix liquid crystal display device that realizes the improvement in productivity as well as in yield. In the present invention, a laminate film comprising the conductive film comprising metallic material and the second amorphous semiconductor film containing an impurity element of one conductivity type and the amorphous semiconductor film is selectively etched with the same etching gas to form a side edge of the first amorphous semiconductor film | 08-12-2010 |
20110114959 | SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF - The present invention has an object to provide an active-matrix liquid crystal display device that realizes the improvement in productivity as well as in yield. In the present invention, a laminate film comprising the conductive film comprising metallic material and the second amorphous semiconductor film containing an impurity element of one conductivity type and the amorphous semiconductor film is selectively etched with the same etching gas to form a side edge of the first amorphous semiconductor film | 05-19-2011 |
20120043544 | SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF - The present invention has an object to provide an active-matrix liquid crystal display device that realizes the improvement in productivity as well as in yield. In the present invention, a laminate film comprising the conductive film comprising metallic material and the second amorphous semiconductor film containing an impurity element of one conductivity type and the amorphous semiconductor film is selectively etched with the same etching gas to form a side edge of the first amorphous semiconductor film | 02-23-2012 |
Patent application number | Description | Published |
20080308734 | RADIATION IMAGE CONVERSION PANEL, SCINTILLATOR PANEL, AND RADIATION IMAGE SENSOR - The radiation image conversion panel in accordance with the present invention has an aluminum substrate; an alumite layer formed on a surface of the aluminum substrate; a chromium layer covering the alumite layer; a metal film, provided on the chromium layer, having a radiation transparency and a light reflectivity; an oxide layer covering the metal film and having a radiation transparency and a light transparency; a protective film covering the oxide layer and having a radiation transparency and a light transparency; and a converting part provided on the protective film and adapted to convert a radiation image. | 12-18-2008 |
20080308736 | RADIATION IMAGE CONVERSION PANEL, SCINTILLATOR PANEL, AND RADIATION IMAGE SENSOR - The radiation image conversion panel in accordance with the present invention has an aluminum substrate; an alumite layer formed on a surface of the aluminum substrate; a metal film, provided on the alumite layer, having a radiation transparency and a light reflectivity; a protective film covering the metal film and having a radiation transparency and a light transparency; and a converting part provided on the protective film and adapted to convert a radiation image. | 12-18-2008 |
20080311484 | Radiation image conversion panel, scintillator panel, and radiation image sensor - The radiation image conversion panel in accordance with the present invention has an aluminum substrate, an alumite layer formed on a surface of the aluminum substrate, an intermediate film covering the alumite layer and having a radiation transparency and a light transparency, and a converting part provided on the intermediate film and adapted to convert a radiation image. | 12-18-2008 |
20090072160 | RADIATION IMAGE CONVERSION PANEL, SCINTILLATOR PANEL, AND RADIATION IMAGE SENSOR - The radiation image conversion panel in accordance with the present invention has an aluminum substrate; an alumite layer formed on a surface of the aluminum substrate; a metal film, provided on the alumite layer, having a radiation transparency and a light reflectivity; a protective film covering the metal film and having a radiation transparency and a light transparency; and a converting part provided on the protective film and adapted to convert a radiation image. | 03-19-2009 |
20120312998 | RADIATION IMAGE CONVERSION PANEL - A radiation image conversion panel which can improve its optical output and resolution is provided. A radiation image conversion panel | 12-13-2012 |
20130043397 | SCINTILLATOR PANEL, AND RADIOGRAPHIC IMAGE SENSOR - A scintillator panel | 02-21-2013 |
20130087713 | SCINTILLATOR PANEL AND RADIATION IMAGE SENSOR - A scintillator panel | 04-11-2013 |
20130112882 | RADIATION DETECTOR - Provided is a radiation detector | 05-09-2013 |
20130112884 | RADIATION DETECTOR - Provided is a radiation detector | 05-09-2013 |
20150059151 | RADIATION DETECTOR - Provided is a radiation detector | 03-05-2015 |
20150198529 | SCINTILLATOR PANEL AND RADIATION DETECTOR - In a scintillator panel, a glass substrate with the thickness of not more than 150 μm serves as a support body, thereby achieving excellent radiotransparency and flexibility. Furthermore, in this scintillator panel, an organic resin layer is formed so as to cover the entire surface of the glass substrate. This reinforces the glass substrate, whereby the edge part thereof can be prevented from chipping or cracking. Furthermore, stray light can be prevented from entering a side face of the glass substrate and, since the organic resin layer is formed on the entire surface, it becomes feasible to suppress warping of the glass substrate due to internal stress after formation of a scintillator layer. | 07-16-2015 |
20150204985 | SCINTILLATOR PANEL AND RADIATION DETECTOR - In a scintillator panel, a glass substrate with the thickness of not more than 150 μm serves as a support body, thereby achieving excellent radiotransparency and flexibility and also relieving a problem of thermal expansion coefficient. Furthermore, in this scintillator panel, an organic resin layer is formed so as to cover a one face side and a side face side of the glass substrate and an organic resin layer is formed so as to cover an other face side and the side face side of the glass substrate on which the organic resin layer is formed. This effectively prevents the edge part from chipping or cracking. Furthermore, stray light can be effectively prevented from entering the side face of the glass substrate and, the entire surface thereof is covered by the organic resin layers, so that warping of the glass substrate can be suppressed. | 07-23-2015 |
20150247934 | SCINTILLATOR PANEL AND RADIATION DETECTION DEVICE - A scintillator panel for converting radiation into scintillation light, includes a substrate having a front surface and a back surface, a plurality of scintillator sections formed on the front surface of the substrate so as to be separate from one another, and having upper surfaces and side surfaces extending from the upper surfaces toward the front surface of the substrate, solvent permeation blocking film formed on the upper surfaces and the side surfaces of the scintillator sections so as to cover the upper surfaces and the side surfaces of the scintillator sections, and a light shielding layer formed on the solvent permeation blocking film, that is for shielding the scintillation light, and the scintillator section is composed of a plurality of columnar crystals of a scintillator material, the solvent permeation blocking film is formed so as not to fill gaps between the side surfaces of the scintillator sections adjacent to one another, and the light shielding layer is formed on the solvent permeation blocking films on the side surfaces of the scintillator sections so as to fill the gaps. | 09-03-2015 |
20150247935 | SCINTILLATOR PANEL AND RADIATION DETECTOR - A scintillator panel for converting radiation into scintillation light, the scintillator panel includes a substrate having a front surface and a back surface, and formed with a plurality of convex portions projecting from the front surface in a predetermined direction toward the front surface from the back surface and a concave portion defined by the convex portions, a plurality of first scintillator sections formed on the respective convex portions of the substrate, and a second scintillator section formed on the bottom surface of the concave portion of the substrate, and the first scintillator section has a first portion extending along the predetermined direction from an upper surface of the convex portion and a second portion extending along the predetermined direction from side surfaces of the convex portion so as to contact with the first portion, the first and second portions are composed of a plurality of columnar crystals of a scintillator material, the first scintillator sections are separated from one another, and the second scintillator section is in contact with the second portion. | 09-03-2015 |