| Patent application number | Description | Published |
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| 20080277805 | Semiconductor Device - Disclosed is a semiconductor device having a wafer level package structure which is characterized by containing a resin layer composed of a resin composition which is curable at 250° C. or less. Such a semiconductor device having a wafer level package structure is excellent in low stress properties, solvent resistance, low water absorbency, electrical insulation properties, adhesiveness and the like. | 11-13-2008 |
| 20090008682 | Light-Receiving Device - Disclosed is a light-receiving device comprising a substrate provided with at least one light-receiving element and a transparent cover ( | 01-08-2009 |
| 20090189277 | PHOTOSENSITIVE COMPOSITIONS BASED ON POLYCYCLIC POLYMERS FOR LOW STRESS, HIGH TEMPERATURE FILMS - Vinyl addition polymer compositions, methods for forming such compositions, methods for using such compositions to form microelectronic and optoelectronic devices are provided. The vinyl addition polymer encompassed by such compositions has a polymer backbone having two or more distinct types of repeat units derived from norbornene-type monomers independently selected from monomers of Formula I: | 07-30-2009 |
| 20100120937 | SEMICONDUCTOR DEVICE - Disclosed is a semiconductor device having a wafer level package structure which is characterized by containing a resin layer composed of a resin composition which is curable at 250° C. or less. Such a semiconductor device having a wafer level package structure is excellent in low stress properties, solvent resistance, low water absorbency, electrical insulation properties, adhesiveness and the like. | 05-13-2010 |
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| 20090170225 | METHOD FOR MANUFACTURING SEMICONDUCTOR LIGHT EMITTING DEVICE - A method for manufacturing a semiconductor light emitting device includes forming an insulating film on a semiconductor substrate, the insulating film having an opening therein, forming a Pd electrode in the opening and on the insulating film, and removing the portion of the Pd electrode on the insulating film by the application of a physical force to the portion, while leaving the Pd electrode in the opening. | 07-02-2009 |
| 20090185595 | SEMICONDUCTOR LASER - A GaN laser, includes a coating film on a front end surface through which laser light is emitted. The coating film includes a first insulating film in contact with the front end surface and a second insulating film on the first insulating film. The optical film thickness of the second insulating film is an odd multiple of λ/4 with respect to the wavelength λ of laser light produced by the semiconductor laser. The adhesion of the first insulating film to GaN is stronger than the adhesion of the second insulating film; to GaN. The refractive index of the second insulating film is 2 to 2.3 thick. The first insulating film is 10 nm or less. The first insulating film is an oxide film having a stoichiometric composition. | 07-23-2009 |
| 20100219438 | SEMICONDUCTOR LIGHT-EMITTING ELEMENT AND METHOD FOR MANUFACTURING THE SAME - A semiconductor light-emitting device comprises: a semiconductor substrate; a semiconductor layer structure on the semiconductor substrate, including an active layer and a waveguide ridge; an electrode in contact with all of a top surface of the waveguide ridge; and an insulating film coating side faces of the waveguide ridge, side faces of the electrode, and ends, but not a center portion, of an upper face of the electrode. | 09-02-2010 |
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| 20090068815 | SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF - A semiconductor device in which a main current flows in a direction of the thickness of a semiconductor substrate, to attain desirable electric characteristics. P type semiconductor regions and N type semiconductor regions are alternately provided with an interval therebetween, both regions in a surface of a second main surface of a semiconductor substrate. Between the P type semiconductor regions and the N type semiconductor regions, trenches formed in the surface of the semiconductor substrate are filled with insulators, thereby forming trench isolation structures. Moreover, a second main electrode is formed in contact with both the P type semiconductor regions and the N type semiconductor regions. | 03-12-2009 |
| 20100038707 | SEMICONDUCTOR DEVICE - A semiconductor device including: a semiconductor substrate; a first main electrode provided on a first main surface of said semiconductor substrate; a second main electrode provided on a second main surface of said semiconductor substrate, wherein a main current flows in a thickness direction of said semiconductor substrate; a trench that extends from the first main surface of said semiconductor substrate towards the second main surface; a gate insulating film covering an inner surface of said trench; and a gate electrode buried in said trench and surrounded by said gate insulating film. | 02-18-2010 |
| 20100118455 | SEMICONDUCTOR DEVICE - A semiconductor device includes a semiconductor substrate including a semiconductor layer, a power device formed in the semiconductor substrate, a plurality of concentric guard rings formed in the semiconductor substrate and surrounding the power device, and voltage applying means for applying successively higher voltages respectively to the plurality of concentric guard rings, with the outermost concentric guard ring having the highest voltage applied thereto. | 05-13-2010 |
| 20100193836 | SEMICONDUCTOR DEVICE - A semiconductor device includes a substrate of a first conductivity type, a base region of a second conductivity type, a source region of the first conductivity type, a collector region of the second conductivity type, a trench gate, which is formed in a trench via a gate insulation film, an electrically conductive layer, which is formed within a contact trench that is formed through the source region, a source electrode, which is in contact with the electrically conductive layer and the source region, and a latch-up suppression region of the second conductivity type, which is formed within the base region, in contact with the electrically conductive layer, and higher in impurity concentration than the base region. The distance between the gate insulation film and the latch-up suppression region is not less than the maximum width of a depletion layer that is formed in the base layer by the trench gate. | 08-05-2010 |
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| 20090034937 | VIDEO RECORDING APPARATUS, SCENE CHANGE EXTRACTION METHOD, AND VIDEO AUDIO RECORDING APPARATUS - There are provided with a video recording apparatus and a scene change extraction method, by which a scene change can be extracted from a video while recording the video. The video recording apparatus | 02-05-2009 |
| 20100046925 | VIDEO/AUDIO PLAYBACK APPARATUS - A video/audio playback apparatus that can continue playback even if the external storage means are disconnected during playback, includes a virtual file system section | 02-25-2010 |
| 20100049834 | FILE TRANSFER METHOD AND FILE TRANSFER SYSTEM - A file transfer method and a file transfer system are provided for making it possible to minimize aggregate waiting time of the whole users for data transfer using a multicast protocol. In the file transfer method of transferring a plurality of program files from a recorder storing a plurality of program files via a network to a plurality of mobile terminals using a multicast protocol, the recorder determines order of transfers of the plurality of program files for the purpose of transferring the plurality of program files in order of digital data files, which is the ascending order of file size of the plurality of program files (step S | 02-25-2010 |
| 20100071005 | PROGRAM RECOMMENDATION APPARATUS - A program recommendation apparatus includes a scene attribute extraction unit ( | 03-18-2010 |
| 20100119210 | IMAGE DIFFERENCE DETECTION METHOD AND APPARATUS, SCENE CHANGE DETECTION METHOD AND APPARATUS, AND IMAGE DIFFERENCE VALUE DETECTION METHOD AND APPARATUS - There are provided steps of extracting parts of two image data as areas for analysis (S | 05-13-2010 |
| 20110013882 | VIDEO AUDIO RECORDING/PLAYBACK APPARATUS AND METHOD - During video audio recording, key frames are temporarily stored from the video audio stream to be recorded, and metadata is later generated from the temporarily stored key frames. Even if a CPU or system configuration of a relatively low performance is used, metadata generation can be carried out in parallel with the video recording operation. | 01-20-2011 |
