| Patent application number | Description | Published |
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| 20090213423 | Printing device and printing system - A printing device includes a processor, an attribute managing part configured to be activated by the processor to communicate with a host device and to control an authentication printing job received from the host device, a memory configured to store authentication printing job data and user information extracted from the authentication printing job data, and a deleting part configured to delete the authentication printing job data and the user information stored in the memory based on predetermined results of communication between the attribute managing part and the host device. As a result, the user is not required to consider whether the time for which the authentication printing data is stored should be extended. | 08-27-2009 |
| 20100054609 | IMAGE PROCESSING APPARATUS - An image processing apparatus includes a character data extraction unit, a contour data extraction unit, and an image density changing unit. The character data extraction unit extracts character data, forming a character image serving as a target to be read by an image reading apparatus, from image data. The contour data extraction unit extracts contour data forming a contour image of the character image from the image data. The image density changing unit changes an image density of the contour image base on the contour data extracted from the contour data extraction unit. | 03-04-2010 |
| 20110044708 | IMAGE FORMING APPARATUS - An image forming apparatus includes a first image forming unit for forming a first developer image; a second image forming unit for forming a second developer image; a transfer unit for transferring at least one of the first developer image and the second developer image; a separation contacting unit for moving at least one of the first image forming unit and the second image forming unit to a first position and a second position; a density measurement unit for measuring a first image density and a second image density of the first developer image; and a control unit including a density calculation unit for calculating a difference between the first image density and the second image density and a density correction unit for correcting a density of the first developer image according to the difference. | 02-24-2011 |
| Patent application number | Description | Published |
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| 20080273396 | Nonvolatile semiconductor memory device - A sub-decoder element provided corresponding to each word line is constructed by the same conductive type MOS transistors. The sub-decoder elements are arranged in a plurality of columns such that the layout of active regions for forming the sub-decoder elements is inverted in a Y direction and displaced by one sub-decoder element in an X direction. The arrangement of the sub-decoder elements is adjusted such that high voltage is not applied to both of gate electrodes adjacent in the Y direction. A well voltage of a well region for forming the sub-decoder element group is set to a voltage level such that a source to substrate of the transistor of the sub-decoder element is set into a deep reversed-bias state. In a nonvolatile semiconductor memory device, the leakage by a parasitic MOS in a sub-decoder circuit or word line driving circuit to which a positive or negative high voltage is supplied, can be suppressed. | 11-06-2008 |
| 20090127627 | SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD OF THE SAME - A semiconductor device capable of improving the driving power and a manufacturing method therefor are provided. In a semiconductor device, a gate structure formed by successively stacking a gate oxide film and a silicon layer is arranged over a semiconductor substrate. An oxide film is arranged long the lateral side of the gate structure and another oxide film is arranged along the lateral side of the oxide film and the upper surface of the substrate. In the side wall oxide film comprising these oxide films, the minimum value of the thickness of the first layer along the lateral side of the gate structure is less than the thickness of the second layer along the upper surface of the substrate. | 05-21-2009 |
| 20090310410 | NONVOLATILE SEMICONDUCTOR MEMORY DEVICE - A sub-decoder element provided corresponding to each word line is constructed by the same conductive type MOS transistors. The sub-decoder elements are arranged in a plurality of columns such that the layout of active regions for forming the sub-decoder elements is inverted in a Y direction and displaced by one sub-decoder element in an X direction. The arrangement of the sub-decoder elements is adjusted such that high voltage is not applied to both of gate electrodes adjacent in the Y direction. A well voltage of a well region for forming the sub-decoder element group is set to a voltage level such that a source to substrate of the transistor of the sub-decoder element is set into a deep reversed-bias state. In a nonvolatile semiconductor memory device, the leakage by a parasitic MOS in a sub-decoder circuit or word line driving circuit to which a positive or negative high voltage is supplied, can be suppressed. | 12-17-2009 |
| 20110058426 | NONVOLATILE SEMICONDUCTOR MEMORY DEVICE - A sub-decoder element provided corresponding to each word line is constructed by the same conductive type MOS transistors. The sub-decoder elements are arranged in a plurality of columns such that the layout of active regions for forming the sub-decoder elements is inverted in a Y direction and displaced by one sub-decoder element in an X direction. The arrangement of the sub-decoder elements is adjusted such that high voltage is not applied to both of gate electrodes adjacent in the Y direction. A well voltage of a well region for forming the sub-decoder element group is set to a voltage level such that a source to substrate of the transistor of the sub-decoder element is set into a deep reversed-bias state. In a nonvolatile semiconductor memory device, the leakage by a parasitic MOS in a sub-decoder circuit or word line driving circuit to which a positive or negative high voltage is supplied, can be suppressed. | 03-10-2011 |
| 20110233626 | SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD OF THE SAME - A semiconductor device capable of improving the driving power and a manufacturing method therefor are provided. In a semiconductor device, a gate structure formed by successively stacking a gate oxide film and a silicon layer is arranged over a semiconductor substrate. An oxide film is arranged long the lateral side of the gate structure and another oxide film is arranged along the lateral side of the oxide film and the upper surface of the substrate. In the side wall oxide film comprising these oxide films, the minimum value of the thickness of the first layer along the lateral side of the gate structure is less than the thickness of the second layer along the upper surface of the substrate. | 09-29-2011 |
