| Patent application number | Description | Published |
| 20080206486 | METHOD FOR IDENTIFYING ARTICLES AND PROCESS FOR MAINTAINING SECURITY - The invention is directed to a method by exposing at least a portion of a luminescent coating disposed on a surface of an article to ultraviolet light at one or more preselected wavelengths causing said luminescent coating to exhibit a luminescence spectrum, the luminescence spectrum exhibiting a plurality of intensity peaks that have been predetermined to create a standard; determining the intensity of at least two peaks in the luminescence spectrum of the coating; determining a peak intensity ratio of the at least two peaks; comparing the peak intensity ratio determined with the standard; and, classifying the article according to whether or not the peak intensity ratio does or does not match the standard; wherein the luminescent coating is a particulate luminescent composition comprising a rare earth doped fluoride represented by the chemical formula | 08-28-2008 |
| 20080217578 | NOVEL RARE-EARTH DOPED FLUORIDES AND PROCESS FOR PREPARING - The present invention is directed to rare-earth doped solid state solutions of alkaline earth fluorides having novel luminescence properties, and to a process for preparing them. The invention is useful as identifying markers on articles. Other uses include phosphors for plasma displays, optical frequency multipliers, optical amplifiers and the like. | 09-11-2008 |
| 20090101872 | LEAD-FREE CONDUCTIVE COMPOSITIONS AND PROCESSES FOR USE IN THE MANUFACTURE OF SEMICONDUCTOR DEVICES: Mg-CONTAINING ADDITIVE - Described herein are a silicon semiconductor device and a conductive lead-free silver paste for use in the front side of a solar cell device. | 04-23-2009 |
| 20090104461 | CONDUCTIVE COMPOSITIONS AND PROCESSES FOR USE IN THE MANUFACTURE OF SEMICONDUCTOR DEVICES: Mg-CONTAINING ADDITIVE - Described herein are a silicon semiconductor device and a conductive silver paste for use in the front side of a solar cell device. | 04-23-2009 |
| 20100012898 | METHOD FOR CONTROLLING THE SIZE OF RARE-EARTH-DOPED FLUORIDE NANOPARTICLES - A method wherein an aqueous solution of a fluoride, an aqueous solution of a Group 2 or Group 3 metal salt, and an aqueous solution of a rare-earth metal dopant are combined to form a precipitate of a rare-earth doped Group 2 or Group 3 metal fluoride, and wherein increasing the concentration of the rare-earth dopant cation increases the resulting particle size, and wherein decreasing the concentration of the rare-earth dopant cation decreases the particle size. | 01-21-2010 |
| 20100019200 | METHOD FOR PREPARING RARE-EARTH-DOPED FLUORIDE NANOPARTICLES OF CONTROLLED SIZE - A method wherein an aqueous solution of a fluoride, an aqueous solution of a Group 2 or Group 3 metal salt, and an aqueous solution of a rare-earth metal dopant are combined in a plurality of continuous feed streams to form a series of precipitates of a rare-earth doped Group 2 or Group 3 metal fluoride, and wherein the member of the series differ by the concentration of the associated rare-earth dopant cation in the feed stream, and wherein the series so prepared defines the threshold concentration range above which operation of the process results in a minimization of the particle size variability caused by small perturbations in the concentration of the rare-earth dopant. | 01-28-2010 |
| 20100275997 | CONDUCTIVE COMPOSITIONS AND PROCESSES FOR USE IN THE MANUFACTURE OF SEMICONDUCTOR DEVICES: MG-CONTAINING ADDITIVE - Described herein are a silicon semiconductor device and a conductive silver paste for use in the front side of a solar cell device. | 11-04-2010 |
| 20100317143 | PROCESS OF FORMING A SILICON SOLAR CELL - A process for the production of a silicon solar cell comprising application and firing of an aluminum paste which comprises magnesium oxide and/or magnesium compounds capable of forming magnesium oxide on firing on the back-side of a silicon wafer provided with a silicon nitride antireflective coating on its front-side and being contaminated with silicon nitride on its back-side, and firing the aluminum paste after its application. | 12-16-2010 |