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Kuromitsu, JP

Sadao Kuromitsu, Tokyo JP

Patent application numberDescriptionPublished
20080213800Method for Examing Interstitital Cystitis - It has been found that the urine from an IC patient shows a high value in amount and the existence of activity of an azurophilic granular substance, thereby to establish a method for examining IC. The present invention relates to a method for examining interstitial cystitis using the kinetics of an azurophilic granular substance in urine as a marker. Also, the present invention relates to a kit for examining interstitial cystitis for use in the examination method, a use of an azurophilic granular substance as a test marker for examining interstitial cystitis or evaluating pharmacological effects of a drug, and a method for examining therapeutic effects on a patient with interstitial cystitis using an azurophilic granular substance as a marker.09-04-2008
20090099193EML4-ALK FUSION GENE - The present inventors found that a fusion gene present in some cancer patients is an oncogene. The present invention relates to a polypeptide as a novel fusion protein, a polynucleotide encoding the polypeptide, a vector comprising the polynucleotide, a transformed cell comprising the vector, and a therapeutic agent for cancer.04-16-2009
20100099658DI(ARYLAMINO)ARYL COMPOUND - The present invention provides a compound which is useful as an inhibitor against the kinase activity of EML4-ALK fusion proteins and mutant EGFR proteins.04-22-2010
20100240673EML4-ALK Fusion Gene - The present inventors found that a fusion gene present in some cancer patients is an oncogene. The present invention relates to a polypeptide as a novel fusion protein, a polynucleotide encoding the polypeptide, a vector comprising the polynucleotide, a transformed cell comprising the vector, a method for detecting the fusion protein or polynucleotide, a method for screening a therapeutic agent for cancer, and a method for treating cancer that is shown to be positive for the fusion gene. Further, the present invention relates kit, primer set, and probe useful in the detection of cancer that is shown to be positive for the fusion gene.09-23-2010

Patent applications by Sadao Kuromitsu, Tokyo JP

Sadao Kuromitsu, Tsukuba-Shi JP

Patent application numberDescriptionPublished
20090281072Diaminopyrimidinecarboxamide Derivative - A compound which may be used for the prevention or treatment of respiratory diseases in which STAT 6 is concerned, particularly asthma, chronic obstructive pulmonary disease and the like is provided.11-12-2009

Yoshinoru Kuromitsu, Naka-Gun JP

Patent application numberDescriptionPublished
20110017496POWER MODULE SUBSTRATE HAVING HEATSINK, METHOD FOR MANUFACTURING THE SAME, POWER MODULE HAVING HEATSINK, AND POWER MODULE SUBSTRATE - A power module substrate having a heatsink, includes: a power module substrate having an insulating substrate having a first face and a second face, a circuit layer formed on the first face, and a metal layer formed on the second face; and a heatsink directly connected to the metal layer, cooling the power module substrate, wherein a ratio B/A is in the range defined by 1.55≦B/A≦20, where a thickness of the circuit layer is represented as A, and a thickness of the metal layer is represented as B.01-27-2011

Yoshirou Kuromitsu, Saitama-Shi JP

Patent application numberDescriptionPublished
20090145642POWER ELEMENT MOUNTING SUBSTRATE, METHOD OF MANUFACTURING THE SAME, POWER ELEMENT MOUNTING UNIT, METHOD OF MANUFACTURING THE SAME, AND POWER MODULE - A power element mounting substrate including a circuit layer brazed to a surface of a ceramic plate, and a power element soldered to a front surface of the circuit layer, wherein the circuit layer is constituted using an Al alloy with an average purity of more than or equal to 98.0 wt % and less than or equal to 99.9 wt %, Fe concentration of the circuit layer at a side of a surface to be brazed to the ceramic plate is less than 0.1 wt %, and Fe concentration of the circuit layer at a side of the surface opposite to the surface to be brazed is more than or equal to 0.1 wt %.06-11-2009
20090229864INSULATING CIRCUIT BOARD AND INSULATING CIRCUIT BOARD HAVING COOLING SINK - An insulating circuit board includes an insulating plate, a circuit board joined to a first surface of the insulating plate, and a metal plate joined to a second surface of the insulating plate. The circuit board is formed from an Al alloy having a purity of 99.98% or more or pure Al, and the metal plate is formed from an Al alloy having a purity of 98.00% or more and 99.90% or less. The thickness (a) of the circuit board is 0.2 mm or more and 0.8 mm or less, the thickness (b) of the metal plate is 0.6 mm or more and 1.5 mm or less, and the thicknesses satisfy the expression of a/b≦1. An insulating circuit board having a cooling sink includes cooling sink joined via a second solder layer. The second solder layer contains Sn as its main component, and has a Young's modulus, 35 GPa or more, a 0.2% proof stress of, 30 MPa or more, and a tensile strength of, 40 MPa or more. The cooling sink is formed from, pure Al or an Al alloy.09-17-2009
20090267215POWER MODULE SUBSTRATE, METHOD FOR MANUFACTURING POWER MODULE SUBSTRATE, AND POWER MODULE - Disclosed is a power module having improved joint reliability. Specifically disclosed is a power module including a power module substrate wherein a circuit layer is brazed on the front surface of a ceramic substrate, a metal layer is brazed on the rear surface of the ceramic substrate and a semiconductor chip is soldered to the circuit layer. The metal layer is composed of an Al alloy having an average purity of not less than 98.0 wt. % but not more than 99.9 wt. % as a whole. In this metal layer, the Fe concentration in the side of a surface brazed with the ceramic substrate is set at less than 0.1 wt. %, and the Fe concentration in the side of a surface opposite to the brazed surface is set at not less than 0.1 wt. %.10-29-2009
20100258233CERAMIC SUBSTRATE, METHOD OF MANUFACTURING CERAMIC SUBSTRATE, AND METHOD OF MANUFACTURING POWER MODULE SUBSTRATE - Disclosed is a ceramic substrate including silicon in which the concentration of a silicon oxide and a silicon composite oxide in the surface thereof is less than or equal to 2.7 Atom %.10-14-2010
20100285331METHOD FOR MANUFACTURING POWER MODULE SUBSTRATE, POWER MODULE SUBSTRATE, AND POWER MODULE - A method for manufacturing a power module substrate, includes: preparing a ceramics substrate and a metal plate made of pure aluminum; a fusion step in which the ceramics substrate and the metal plate are stacked in layers with a brazing filler metal interposed therebetween, and a fused aluminum layer is formed at an interface between the ceramics substrate and the metal plate by fusing the brazing filler metal which is caused by heating; and a solidifying step in which the fused aluminum layer is solidified by cooling, and a crystal is grown so as to be arranged in a crystal orientation of the metal plate when the fused aluminum layer is solidified.11-11-2010
20110074010POWER MODULE SUBSTRATE, POWER MODULE, AND METHOD FOR MANUFACTURING POWER MODULE SUBSTRATE - A power module substrate includes: a ceramics substrate having a surface; and a metal plate connected to the surface of the ceramics substrate, composed of aluminum, and including Cu at a joint interface between the ceramics substrate and the metal plate, wherein a Cu concentration at the joint interface is in the range of 0.05 to 5 wt %.03-31-2011

Patent applications by Yoshirou Kuromitsu, Saitama-Shi JP

Yoshirou Kuromitsu, Naka-Gun JP

Patent application numberDescriptionPublished
20110067906POWER MODULE SUBSTRATE, POWER MODULE, AND METHOD FOR MANUFACTURING POWER MODULE SUBSTRATE - A power module substrate includes: a ceramics substrate composed of AlN, having a top face; a metal plate composed of pure aluminum and joined to the top face of the ceramics substrate with a brazing filler metal including silicon interposed therebetween; and a high concentration section formed at a joint interface at which the metal plate is joined to the ceramics substrate, having a silicon concentration that is more than five times the silicon concentration in the metal plate.03-24-2011