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| 20100244087 | NITRIDE SEMICONDUCTOR, NITRIDE SEMICONDUCTOR CRYSTAL GROWTH METHOD, AND NITRIDE SEMICONDUCTOR LIGHT EMITTING ELEMENT - During the growth of a nitride semiconductor crystal on a nonpolar face nitride substrate, such as an m-face, the gas that constitutes the main flow in the process of heating up to a relatively high temperature range, before growth of the nitride semiconductor layer, (the atmosphere to which the main nitride face of the substrate is exposed) and the gas that constitutes the main flow until growth of first and second nitride semiconductor layers is completed (the atmosphere to which the main nitride face of the substrate is exposed) are primarily those that will not have an etching effect on the nitride, while no Si source is supplied at the beginning of growth of the nitride semiconductor layer. Therefore, nitrogen atoms are not desorbed from near the nitride surface of the epitaxial substrate, thus suppressing the introduction of defects into the epitaxial film. This also makes epitaxial growth possible with a surface morphology of excellent flatness. | 09-30-2010 |
| 20100252835 | NITRIDE SEMICONDUCTOR AND NITRIDE SEMICONDUCTOR CRYSTAL GROWTH METHOD - A base at least one principal plane of which is a nitride is prepared for use in epitaxial growth. The base is placed on a susceptor in an epitaxial growth reactor and heated to a predetermined temperature (step A). The heating is started with inactive, nitrogen gas being supplied into the reactor. Then, active, NH | 10-07-2010 |
| 20110253974 | NITRIDE SEMICONDUCTOR - To provide a high-quality nitride semiconductor ensuring high emission efficiency of a light-emitting element fabricated. In the present invention, when obtaining a nitride semiconductor by sequentially stacking a one conductivity type nitride semiconductor part, a quantum well active layer structure part, and a another conductivity type nitride semiconductor part opposite the one conductivity type, the crystal is grown on a base having a nonpolar principal nitride surface, the one conductivity type nitride semiconductor part is formed by sequentially stacking a first nitride semiconductor layer and a second nitride semiconductor layer, and the second nitride semiconductor layer has a thickness of 400 nm to 20 mm and has a nonpolar outermost surface. By virtue of selecting the above-described base for crystal growth, an electron and a hole, which are contributing to light emission, can be prevented from spatial separation based on the QCSE effect and efficient radiation is realized. Also, by setting the thickness of the second nitride semiconductor layer to an appropriate range, the nitride semiconductor surface can avoid having extremely severe unevenness. | 10-20-2011 |
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| 20090105396 | THERMOPLASTIC ELASTOMER COMPOSITION AND COMPOSITE MOLDED ARTICLE MANUFACTURED FROM THE SAME - [Problems] To provide a thermoplastic elastomer composition which can tightly adhere to a resin having a polar group without the need of using any adhesive and is excellent in water resistance, rubber properties and moldability, or to provide a composite molded article manufactured from the composition. | 04-23-2009 |
| 20090152383 | THERMOPLASTIC POLYMER POWDER - A thermoplastic polymer powder which (i) consists mainly of an acrylic block copolymer comprising one or more acrylic ester polymer blocks (A) and bonded thereto at least one polymer block selected among methacrylic ester polymer blocks (B) and acrylic ester polymer blocks (C) differing in structure from the blocks (A); (ii) has a complex dynamic viscosity η*(5) of 5.0×10 | 06-18-2009 |
| 20090202818 | ADHESIVE PRODUCT AND TRANSFER DEVICE - In order to provide an adhesive product capable of effectively maintaining security, the present invention is a pressure sensitive transfer tape ( | 08-13-2009 |
| 20090239433 | POLYLACTIC ACID COMPOSITION - A polylactic acid composition comprising (A) a polylactic acid-series resin and (B) an acrylic triblock copolymer is prepared. The composition fulfills the following requirements: (1) the acrylic triblock copolymer (B) is a triblock polymer comprising (B1) a polymer block having a glass-transition temperature of not higher than 25° C., (B2a) a polymer block which has a glass-transition temperature of not lower than 60° C. and is bound to a terminal of the polymer block (B1), and (B2b) a polymer block which has a glass-transition temperature of not lower than 60° C. and is bound to another terminal thereof; (2) the polymer block (B1) comprises a main structural unit derived from an acrylate, and the polymer block (B2a) and the polymer block (B2b) independently comprise a main structural unit derived from a methacrylate; and (3) both of the weight-average molecular weights of the polymer block (B2a) and polymer block (B2b) are smaller than the weight-average molecular weight of the polymer block (B1). The polylactic acid-series resin (A) and the acrylic triblock copolymer (B) may form a phase separation structure. | 09-24-2009 |
| 20100119797 | POLYMER COMPOSITION AND MOLDED ARTICLE THEREOF - [Problems] To provide a polymer composition that simultaneously has excellent paintability and high oil resistance and is also excellent in thin-wall moldability and flexibility; and a molded article produced by injection-molding of the composition and being suitable for composite-molded grips, automotive interior and exterior trims, and so on. | 05-13-2010 |
| 20110218303 | THERMOPLASTIC POLYMER COMPOSITION AND SHEET-LIKE MOLDED ARTICLE THEREFROM - [Object] Provided are a sheet-like molded article having excellent surface smoothness, moldability, flexibility, and a high transmittance of short-wavelength light, and a thermoplastic polymer composition used to produce the sheet-like molded article. | 09-08-2011 |
