Patent application number | Description | Published |
20130034966 | CHEMICAL DISPERSION METHOD AND DEVICE - A method of semiconductor fabrication including providing a semiconductor wafer and dispensing a first chemical spray onto the wafer using a first nozzle and dispensing a second chemical spray using a second nozzle onto the wafer. These dispensing may be performed simultaneously. The method may further include moving the first and second nozzle. The first and second nozzle may provide the first and second chemical spray having at least one different property. For example, different chemical compositions, concentrations, temperatures, angles of dispensing, or flow rate. A chemical dispersion apparatus providing two nozzles which are operable to be separately controlled is also provided. | 02-07-2013 |
20130045606 | SEMICONDUCTOR DEVICE CLEANING METHOD AND APPARATUS - A method includes providing a wafer and providing a first spray bar spaced a distance from the wafer. A first spray is dispensed from the first spray bar onto a first portion (e.g., half) of the wafer. Thereafter, the wafer is rotated. A second spray is dispensed from the first spray bar onto a second portion (e.g., half) of the rotated wafer. In embodiments, a plurality of spray bars are positioned above the wafer. One or more of the spray bars may be tunable in separation distance and/or angle of dispensing. | 02-21-2013 |
20130068248 | SEMICONDUCTOR DEVICE CLEANING METHOD - The present disclosure provides a method including providing a chamber having a first inlet and a second inlet. A solution of a de-ionized (DI) water and an acid (e.g., a dilute acid) is provided to the chamber via the first inlet. A carrier gas (e.g., N | 03-21-2013 |
20130074872 | IN-SITU BACKSIDE CLEANING OF SEMICONDUCTOR SUBSTRATE - The present disclosure provides a method and apparatus for cleaning a semiconductor wafer. In an embodiment of the method, a single wafer cleaning apparatus is provided and a wafer is positioned in the apparatus. A first chemical spray is dispensed onto a front surface of the wafer. A back surface of the wafer is cleaned while dispensing the first chemical spray. The cleaning of the back surface may include a brush and spray of cleaning fluids. An apparatus operable to clean the front surface and the back surface of a single semiconductor wafer is also described. | 03-28-2013 |
20130171336 | WAFER PROCESSING METHOD AND SYSTEM USING MULTI-ZONE CHUCK - In a wafer processing method and a wafer processing system, a first property on a back side of a wafer is measured. The back side of the wafer is supported on a multi-zone chuck having a plurality of zones with controllable clamping forces. The wafer is secured to the multi-zone chuck by controlling the clamping forces in the corresponding zones in accordance with measured values of the first property in the zones. | 07-04-2013 |
20140158172 | SYSTEM AND METHOD OF CLEANING FOUP - A system for cleaning a container such as semiconductor wafer carrier includes a housing, a cleaning unit in the housing, an analyzing unit within the housing, and a vacuum unit within the housing. The cleaning unit comprises a cleaning chamber, and is configured to spray a cleaning medium into the container in the cleaning chamber and dry the container. The analyzing unit is configured to analyze air inside the container coming out of the cleaning chamber, and provide a testing result for each ingredient of possible airborne molecular contamination (AMC) and humidity. The vacuum unit comprises a vacuum chamber configured to apply vacuum onto a container when the testing result for an ingredient is higher than a respective threshold. | 06-12-2014 |
20140202383 | WAFER PROCESSING SYSTEM USING MULTI-ZONE CHUCK - A wafer processing system includes at least one metrology chamber, a process chamber, and a controller. The at least one metrology chamber is configured to measure a thickness of a first layer on a back side of a wafer. The process chamber is configured to perform a treatment on a front side of the wafer. The front side is opposite the back side. The process chamber includes therein a multi-zone chuck. The multi-zone chuck is configured to support the back side of the wafer. The multi-zone chuck has a plurality of zones with controllable clamping forces for securing the wafer to the multi-zone chuck. The controller is coupled to the metrology chamber and the multi-zone chuck. The controller is configured to control the clamping forces in the corresponding zones in accordance with measured values of the thickness of the first layer in the corresponding zones. | 07-24-2014 |
20150068559 | Device Manufacturing Cleaning Process Using Vaporized Solvent - A cleaning method using vaporized solvent is provided. A solvent-containing vapor is generated, wherein the solvent-containing vapor comprises a solvent. The solvent-containing vapor is conducted to a substrate having debris or contaminants to clean the substrate, wherein the solvent-containing vapor condenses to form a liquid on a surface of the substrate. The liquid phase of the solvent-containing vapor is changed to a solid phase. The solid phase of the solvent-containing vapor is changed back to a liquid phase. The substrate is spun dried to remove the solvent-containing vapor in liquid phase and any debris or contaminants. | 03-12-2015 |