Patent application number | Description | Published |
20080265260 | Power Device - A power device having a transistor structure is formed by using a wide band gap semiconductor. A current path | 10-30-2008 |
20090104762 | SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME - Ion implantation is carried out to form a p-well region and a source region in parts of a high resistance SiC layer on a SiC substrate, and a carbon film is deposited over the substrate. With the carbon film deposited over the substrate, annealing for activating the implanted dopant ions is performed, and then the carbon film is removed. Thus, a smooth surface having hardly any surface roughness caused by the annealing is obtained. Furthermore, if a channel layer is epitaxially grown, the surface roughness of the channel layer is smaller than that of the underlying layer. Since the channel layer having a smooth surface is provided, it is possible to obtain a MISFET with a high current drive capability. | 04-23-2009 |
20120018740 | SEMICONDUCTOR ELEMENT AND MANUFACTURING METHOD THEREFOR - A semiconductor device | 01-26-2012 |
20120138951 | SEMICONDUCTOR CHIP AND PROCESS FOR PRODUCTION THEREOF - A semiconductor chip of the present invention is a semiconductor device that includes a hexagonal semiconductor layer having anisotropic mechanical properties. A semiconductor chip ( | 06-07-2012 |
20130140586 | SILICON CARBIDE SEMICONDUCTOR ELEMENT AND METHOD FOR PRODUCING THE SAME - This silicon carbide semiconductor element includes: a body region of a second conductivity type which is located on a drift layer of a first conductivity type; an impurity region of the first conductivity type which is located on the body region; a trench which runs through the body region and the impurity region to reach the drift layer; a gate insulating film which is arranged on surfaces of the trench; and a gate electrode which is arranged on the gate insulating film. The surfaces of the trench include a first side surface and a second side surface which is opposed to the first side surface. The concentration of a dopant of the second conductivity type is higher at least locally in a portion of the body region which is located beside the first side surface than in another portion of the body region which is located beside the second side surface. | 06-06-2013 |
20130168701 | SILICON CARBIDE SEMICONDUCTOR ELEMENT AND METHOD FOR FABRICATING THE SAME - A SiC semiconductor element includes: a SiC substrate which has a principal surface tilted with respect to a (0001) Si plane; a SiC layer arranged on the principal surface of the substrate; a trench arranged in the SiC layer and having a bottom, a sidewall, and an upper corner region located between the sidewall and the upper surface of the SiC layer; a gate insulating film arranged on at least a part of the sidewall and on at least a part of the upper corner region of the trench and on at least a part of the upper surface of the SiC layer; and a gate electrode arranged on the gate insulating film. The upper corner region has a different surface from the upper surface of the SiC layer and from a surface that defines the sidewall. The gate electrode contacts with both of a first portion of the gate insulating film located on the upper corner region and a second portion of the gate insulating film located on the sidewall. The first portion of the gate insulating film is thicker than a third portion of the gate insulating film located on the upper surface of the SiC layer. And an end portion of the gate electrode is located on the upper corner region. | 07-04-2013 |
20140014997 | NITRIDE SEMICONDUCTOR LIGHT-EMITTING ELEMENT AND LIGHT SOURCE INCLUDING THE NITRIDE SEMICONDUCTOR LIGHT-EMITTING ELEMENT - A nitride semiconductor light-emitting element includes: n-side and p-side electrodes; n-type and p-type nitride semiconductor layers; and an active layer arranged between the n- and p-type nitride semiconductor layers. The p-type nitride semiconductor layer has a projection having a height of 30 nm to 50 nm. The projection is formed of a p-type nitride semiconductor including magnesium and silicon. The p-type nitride semiconductor has a silicon concentration of 1.0×10 | 01-16-2014 |
20140048771 | NITRIDE SEMICONDUCTOR LIGHT-EMITTING ELEMENT, AND LIGHT SOURCE - A nitride semiconductor light-emitting element uses a non-polar plane as its growing plane. A GaN/InGaN multi-quantum well active layer includes an Si-doped layer which is arranged in an In | 02-20-2014 |
20140151719 | SILICON CARBIDE SEMICONDUCTOR ELEMENT - This silicon carbide semiconductor element includes: a body region of a second conductivity type which is located on a drift layer of a first conductivity type; an impurity region of the first conductivity type which is located on the body region; a trench which runs through the body region and the impurity region to reach the drift layer; a gate insulating film which is arranged on surfaces of the trench; and a gate electrode which is arranged on the gate insulating film. The surfaces of the trench include a first side surface and a second side surface which is opposed to the first side surface. The concentration of a dopant of the second conductivity type is higher at least locally in a portion of the body region which is located beside the first side surface than in another portion of the body region which is located beside the second side surface. | 06-05-2014 |