Patent application number | Description | Published |
20120217605 | SEMICONDUCTOR DEVICE - A semiconductor device having a solid-state image sensor which can prevent inter-pixel crosstalk more reliably. The device includes: a semiconductor substrate having a main surface; a first conductivity type impurity layer located over the main surface of the substrate; a photoelectric transducer including a first conductivity type impurity region and a second conductivity type impurity region which are joined to each other over the first conductivity type impurity layer; and transistors which configure a unit pixel including the photoelectric transducer and are electrically coupled to the photoelectric transducer. At least part of the area around the photoelectric transducer in a plan view contains an air gap and also has an isolation insulating layer for electrically insulating the photoelectric transducer and a photoelectric transducer adjacent to it from each other. The isolation insulating layer abuts on the top surface of the first conductivity type impurity layer. | 08-30-2012 |
20140213030 | MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE - To provide a manufacturing method of a semiconductor device including a memory cell having a higher reliability. | 07-31-2014 |
20150028404 | SEMICONDUCTOR DEVICE WITH ISOLATION INSULATING LAYER CONTAINING AIR GAP - A semiconductor device having a solid-state image sensor which can prevent inter-pixel crosstalk more reliably. The device includes: a semiconductor substrate having a main surface; a first conductivity type impurity layer located over the main surface of the substrate; a photoelectric transducer including a first conductivity type impurity region and a second conductivity type impurity region which are joined to each other over the first conductivity type impurity layer; and transistors which configure a unit pixel including the photoelectric transducer and are electrically coupled to the photoelectric transducer. At least part of the area around the photoelectric transducer in a plan view contains an air gap and also has an isolation insulating layer for electrically insulating the photoelectric transducer and a photoelectric transducer adjacent to it from each other. The isolation insulating layer abuts on the top surface of the first conductivity type impurity layer. | 01-29-2015 |
20150243702 | SEMICONDUCTOR DEVICE, METHOD OF MANUFACTURING SAME, AND METHOD OF CONTROLLING SEMICONDUCTOR DEVICE - Provided are a semiconductor device capable of detecting a light of each color with high accuracy without using a color filter, particularly enhancing detection accuracy of charges obtained by photoelectric conversion of a long-wavelength light, and manufacturing and control methods thereof. The semiconductor device has a p type semiconductor substrate, and first, second and third pixel regions. These regions each include a p type well region in the p type semiconductor substrate and an n type region configuring a pn junction therewith. The p type well region of the first pixel region is thinner, from the main surface to the lowermost portion, than that of the second and third pixel regions. On the side opposite to the main surface of the p type well region of the first and second pixel regions, a buried p type well region contiguous to the p type well region is further placed. | 08-27-2015 |
Patent application number | Description | Published |
20080315186 | Organic Semiconductor Device and Organic Semiconductor Thin Film - An organic semiconductor device includes a channel forming region including an organic semiconductor thin film which is composed of an organic semiconductor material having an oxidation or reduction mechanism in units of two-π-electrons and a two- or three-dimensional conduction path. It is thus possible to provide an organic semiconductor device including an organic semiconductor thin film based on an organic semiconductor thin film composed of an organic semiconductor material which can be dissolved in an organic solvent at a low temperature (e.g., room temperature) and is suitable for use in a coating process. | 12-25-2008 |
20090072227 | ORGANIC COMPOUND CRYSTAL AND FIELD-EFFECT TRANSISTOR - A field-effect transistor includes a channel-forming region composed of an organic compound crystal including π-electron conjugated molecules each containing chalcogen atoms as a constituent, wherein the distance between chalcogen atoms of adjacent π-electron conjugated molecules is short, and the organic compound crystal has a periodic structure in which π-electron conjugated molecules are two-dimensionally or three-dimensionally linked together. | 03-19-2009 |
20120061638 | MEMORY ELEMENT AND MEMORY DEVICE - There are provided a memory element and a memory device in which the state of erasing remains stable by deactivation of a localized site(s) formed inside of a resistance change layer. The memory element includes a first electrode, a memory layer, and a second electrode in this order. The memory layer includes a resistance change layer including an n-type dopant or a p-type dopant, and disposed on the first electrode side, and an ion source layer disposed between the resistance change layer and the second electrode. | 03-15-2012 |
20120068146 | MEMORY ELEMENT AND MEMORY DEVICE - There are provided a memory element and a memory device with a smaller range of element-to-element variation of electrical characteristics. The memory element includes a first electrode, a memory layer, and a second layer in this order. The memory layer includes a resistance change layer including a plurality of layers varying in diffusion coefficient of mobile atoms, and an ion source layer disposed between the resistance change layer and the second electrode. | 03-22-2012 |