Patent application number | Description | Published |
20100021631 | COATING APPARATUS AND COATING METHOD - In a coating apparatus, a distributor plate | 01-28-2010 |
20100248458 | COATING APPARATUS AND COATING METHOD - The present invention provides a coating apparatus capable of efficiently performing a deposition process and also provides an efficient coating method. | 09-30-2010 |
20110064878 | APPARATUS AND METHOD FOR FILM DEPOSITION - A deposition apparatus | 03-17-2011 |
20110064885 | APPARATUS AND METHOD FOR FILM DEPOSITION - The deposition apparatus | 03-17-2011 |
20110114013 | FILM DEPOSITION APPARATUS AND METHOD - A deposition apparatus | 05-19-2011 |
20110200749 | FILM DEPOSITION APPARATUS AND METHOD - A chamber includes at its upper section a gas inlet from which to introduce a deposition gas. The inner walls of the chamber are covered by a cylindrical liner, and the chamber houses a susceptor assembly on which to place a semiconductor substrate. The liner includes a barrel section inside which the susceptor assembly is placed; a head section that is located right below the gas inlet and smaller in horizontal cross-sectional area than the barrel section; and a stepped section that connects the barrel section and the head section. The susceptor assembly is formed by fixing a ring plate to a susceptor via support posts. The ring plate covers the periphery of the stepped section of the liner. By the deposition gas flowing in a downward direction from the gas inlet into the chamber, a crystalline film is formed on the substrate positioned on the susceptor assembly. | 08-18-2011 |
20110206866 | DEPOSITION APPARATUS AND METHOD - A deposition apparatus | 08-25-2011 |
20110265710 | FILM FORMING APPARATUS AND METHOD - A film-forming apparatus includes a chamber in which a substrate is to be placed, a reaction gas supply portion that supplies a reaction gas into the chamber, a heater that heats the substrate, a radiation thermometer that is provided outside the chamber to measure the temperature of the substrate by receiving radiant light from the substrate, and a tubular member that protects an optical path of radiant light between the substrate and the radiation thermometer. An inert gas is supplied from an inert gas supply portion to the tubular member. The tubular member preferably has an inner peripheral surface and an outer peripheral surface made of a material having a lower emissivity than the inner peripheral surface. | 11-03-2011 |
20120028445 | SUSCEPTOR TREATMENT METHOD AND A METHOD FOR TREATING A SEMICONDUCTOR MANUFACTURING APPARATUS - A susceptor treatment method including placing a first substrate on a susceptor and forming a Si film on the first substrate by epitaxial growth, placing a second substrate on the susceptor in place of the first substrate and forming a SiC film on the second substrate by epitaxial growth, and allowing HCl gas to flow downward from above the susceptor while the susceptor, from which the second substrate has been removed, is heated to a temperature and rotated to remove the remaining crystalline grains derived from the epitaxial growth of Si film and the SiC film on the susceptor. | 02-02-2012 |
20120031330 | SEMICONDUCTOR SUBSTRATE MANUFACTURING APPARATUS - According to this embodiment, a semiconductor substrate manufacturing apparatus for epitaxial growth in which gases are supplied to a wafer placed on a susceptor and in which a heater is provided on the back surface of the susceptor. As a result of this epitaxial growth, SiC film is deposited onto the susceptor in the film-forming chamber. The susceptor is then moved into a separate chamber and the SiC film deposited on the susceptor during the epitaxial process is removed. After removal of SiC film, regeneration of the SiC film of the susceptor occurs. This semiconductor substrate manufacturing apparatus makes it possible to remove film deposited on a susceptor during epitaxial growth that would otherwise limit manufacturing yield. | 02-09-2012 |
20120070577 | FILM-FORMING APPARATUS AND FILM-FORMING METHOD - A film-forming apparatus and film-forming method is provided that includes a reflector system capable of adjusting the temperature distribution of a substrate. The essential role of a reflector is to reduce the output of a heater by reflecting radiation heat from the heater and to protect members provided below the heater from heat. When a silicon wafer is heated by a first heater and a second heater, the temperature of the silicon wafer becomes higher in the inner circumferential part of the wafer rather than in the outer circumferential part of the silicon wafer. When a ring-shaped reflector is used, radiation heat is reflected by the ring-shaped portion, but is not reflected by the inner circumferential part of the reflector. Therefore, the use of a ring-shaped reflector makes it possible to allow a wafer to have an even heating distribution. | 03-22-2012 |
20120244684 | FILM-FORMING APPARATUS AND METHOD - A film-forming apparatus and method is provided that includes a reflector and insulator capable of suppressing the thermal degradation of components in close proximity to the heater in a film-forming apparatus. In a film-forming apparatus the reflector is used in combination with insulator. Specifically, in a film-forming apparatus a reflector is disposed below a heater with the insulator placed below the reflector. The insulator absorbs the radiant heat from the heater thus suppressing an excessive rise in temperature around the heater, it is therefore possible to prevent thermal degradation of components in close proximity of the heater. For example, when the temperature of a semiconductor substrate is 1650° C., the temperature of the quartz heater base maybe about 1000° C. This is lower than the softening point temperature of the quartz heater base, preventing deformation of the heater base. | 09-27-2012 |
20120325138 | FILM-FORMING APPARATUS AND FILM-FORMING METHOD - A film-forming apparatus and method comprising a film-forming chamber for supplying a reaction gas into, a cylindrical shaped liner provided between an inner wall of the film-forming chamber and a space for performing a film-forming process, a main-heater for heating a substrate placed inside the liner, from the bottom side, a sub-heater cluster provided between the liner and the inner wall, for heating the substrate from the top side, wherein the main-heater and the sub-heater cluster are resistive heaters, wherein the sub-heater cluster has a first sub-heater provided at the closest position to the substrate, and a second sub-heater provided above the first sub-heater, wherein the first sub-heater heats the substrate in combination with the main-heater, the second sub-heater heats the liner at a lower output than the first sub-heater, wherein each temperature of the main-heater, the first sub-heater, and the second sub-heater is individually controlled. | 12-27-2012 |
20130036968 | FILM-FORMING APPARATUS AND METHOD - A film-forming apparatus and method comprising a film-forming chamber for supplying a reaction gas, a cylindrical shaped liner provided in the film-forming chamber, a straightening vane provided above the liner for the reaction gas to pass through, wherein the outside of the film-forming chamber connects the inside of the liner via a substrate transfer portion provided at the wall of the film-forming chamber by moving the straightening vane from the position that the straightening vane closes the upper opening of the liner. A substrate supporting portion provided in the liner, for supporting the substrate before the film-forming to move the substrate in a vertical direction, a substrate transfer unit capable of moving inside the film-forming chamber through the substrate transfer portion, wherein the substrate is transferred between the substrate supporting portion and the substrate transfer unit. | 02-14-2013 |
20130068164 | HEATING UNIT AND FILM-FORMING APPARATUS - A heating unit and a film-forming apparatus comprising of a film-forming chamber, a heating unit for heating a substrate placed in the film-forming chamber, wherein the heating unit comprises of a heat source with a plane surfaced top, an electrode contacting electrically with the heat source, wherein the heat source has a ring-shape or a disk-shape that is formed by an individual, or plurality of heat source members. Wherein the heat source is comprised of a material selected from a group consisting of a carbon (C) material, a carbon material or a silicon carbide (SiC) material coated with silicon carbide (SiC), and a silicon carbide (SiC) material, and wherein the heat source has a ratio of the width (a) of the top portion direction to the thickness (X) of the side part (a/X) is 3 to 10. | 03-21-2013 |
20130084390 | FILM-FORMING APPARATUS AND FILM-FORMING METHOD - A film-forming apparatus and film-forming method comprising a film-forming chamber for being supplied a reaction gas, a substrate placed on a susceptor in the film-forming chamber, a heater for heating the substrate, a transfer chamber adjacent to the film-forming chamber, transferring the substrate to the film-forming chamber, measuring the temperature of the substrate, rotating the substrate via the susceptor, a detecting unit for detecting rotating direction and angle of the rotating unit, generating data of the substrate using temperature data of the substrate measured by the temperature-measuring unit while the substrate is rotating, and positional data of coordinates at which temperature is measured, generated based on the rotating direction and angle, acquiring data of the movement direction and amount of positional error of the substrate based on the data, a control unit for adjusting position of the transfer unit based on the amount of position error of the substrate. | 04-04-2013 |
20130104800 | FILM-FORMING METHOD AND FILM-FORMING APPARATUS | 05-02-2013 |
20130247816 | FILM-FORMING APPARATUS FOR THE FORMATION OF SILICON CARBIDE AND FILM-FORMING METHOD FOR THE FORMATION OF SILICON CARBIDE - A film-forming apparatus and method for the formation of silicon carbide comprising, a film-forming chamber to which a reaction gas is supplied, a temperature-measuring unit which measures a temperature within the chamber, a plurality of heating units arranged inside the chamber, an output control unit which independently controls outputs of the plurality of heating units, a substrate-transferring unit which transfers a substrate into, and out of the chamber, wherein the output control unit turns off or lowers at least one output of the plurality of heating units when the film forming process is completed, when the temperature measured by the temperature-measuring unit reaches a temperature at which the substrate-transferring unit is operable within the chamber, then at least one output of the plurality of heating units turned off or lowered, is turned on or raised, and the substrate is transferred out of the film-forming chamber by the substrate-transferring unit. | 09-26-2013 |