Patent application number | Description | Published |
20100230677 | THIN FILM TRANSISTOR AND MANUFACTURING METHOD THEREOF - A thin film transistor in which deterioration at initial operation is not likely to be caused and a manufacturing method thereof. A transistor which includes a gate insulating layer at least whose uppermost surface is a silicon nitride layer, a semiconductor layer over the gate insulating layer, and a buffer layer over the semiconductor layer and in which the concentration of nitrogen in the vicinity of an interface between the semiconductor layer and the gate insulating layer, which is in the semiconductor layer is lower than that of the buffer layer and other parts of the semiconductor layer. Such a thin film transistor can be manufactured by exposing the gate insulating layer to an air atmosphere and performing plasma treatment on the gate insulating layer before the semiconductor layer is formed. | 09-16-2010 |
20110089416 | SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME - An object is to provide a semiconductor device with stable electric characteristics in which an oxide semiconductor is used. An impurity such as hydrogen or moisture (e.g., a hydrogen atom or a compound containing a hydrogen atom such as H | 04-21-2011 |
20110215325 | METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE - A highly purified oxide semiconductor layer is formed in such a manner that a substance that firmly bonds during film formation to an impurity containing a hydrogen atom is introduced into a film formation chamber, the substance is reacted with the impurity containing a hydrogen atom remaining in the film formation chamber, and the substance is changed to a stable substance containing the hydrogen atom. The stable substance containing the hydrogen atom is exhausted without providing a metal atom of an oxide semiconductor layer with the hydrogen atom; therefore, a phenomenon in which a hydrogen atom or the like is taken into the oxide semiconductor layer can be prevented. As the substance that firmly bonds to the impurity containing a hydrogen atom, a substance containing a halogen element is preferable, for example. | 09-08-2011 |
20140138683 | SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME - An object is to provide a semiconductor device with stable electric characteristics in which an oxide semiconductor is used. An impurity such as hydrogen or moisture (e.g., a hydrogen atom or a compound containing a hydrogen atom such as H | 05-22-2014 |
20150079731 | SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME - An object is to provide a semiconductor device with stable electric characteristics in which an oxide semiconductor is used. An impurity such as hydrogen or moisture (e.g., a hydrogen atom or a compound containing a hydrogen atom such as H | 03-19-2015 |
20150194508 | SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME - An object is to provide a high reliability thin film transistor using an oxide semiconductor layer which has stable electric characteristics. In the thin film transistor in which an oxide semiconductor layer is used, the amount of change in threshold voltage of the thin film transistor before and after a BT test is made to be 2 V or less, preferably 1.5 V or less, more preferably 1 V or less, whereby the semiconductor device which has high reliability and stable electric characteristics can be manufactured. In particular, in a display device which is one embodiment of the semiconductor device, a malfunction such as display unevenness due to change in threshold voltage can be reduced. | 07-09-2015 |
Patent application number | Description | Published |
20090142933 | MANUFACTURING APPARATUS FOR SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD FOR SEMICONDUCTOR DEVICE - A manufacturing apparatus for a semiconductor device, includes: a reaction chamber to which a wafer w is loaded; a gas supply port for supplying first process gas including source gas from an upper portion of the reaction chamber; a first rectifying plate for supplying the first process gas onto the wafer in a rectifying state; a first gas exhaust port for exhausting gas from a lower portion of the reaction chamber; a second gas exhaust port for exhausting gas from the upper portion of the reaction chamber; a heater for heating the wafer w; a susceptor for retaining the wafer w; and a rotation drive unit for rotating the wafer w. | 06-04-2009 |
20100055925 | HEATER, MANUFACTURING APPARATUS FOR SEMICONDUCTOR DEVICE, AND MANUFACTURING METHOD FOR SEMICONDUCTOR DEVICE - A heater for heating a wafer includes elements that are arranged at a distance from one another in a rotationally symmetrical fashion with respect to a shaft extending through a center of the wafer, an electrode being provided to each of the elements to heat the wafer uniformly. | 03-04-2010 |
20100163524 | METHOD FOR MANUFACTURING SUSCEPTOR - A method for manufacturing a susceptor includes: forming a concave pattern in a surface of a substrate to be processed; applying a SiC paste containing a SiC powder and a sintering agent to the surface of the substrate to be processed to fill the concave pattern to form a SiC coating layer; laminating a SiC substrate on the SiC coating layer; and firing the SiC coating layer to form a SiC layer having at least one convex section on the surface of the SiC substrate. | 07-01-2010 |
20110014789 | MANUFACTURING APPARATUS AND METHOD FOR SEMICONDUCTOR DEVICE - There is provided an apparatus for manufacturing a semiconductor device including a chamber in which a wafer is loaded; a gas supply mechanism for supplying process gas into the chamber; a gas discharge mechanism for discharging gas from the chamber; a heater having a slit and for heating the wafer to a predetermined temperature; a push-up base on which the wafer is mounted in an lifted state and housed in the slit in a lower state; a vertical rotation drive control mechanism for moving the push-up base up/down and rotating the push-up base in an lifted state; and a rotating member for rotating the wafer in a predetermined position and a rotation drive control mechanism connected to the rotating member. | 01-20-2011 |
20110039399 | MANUFACTURING APPARATUS AND METHOD FOR SEMICONDUCTOR DEVICE - A manufacturing apparatus for a semiconductor device includes: a chamber configured to load a wafer into the chamber; a gas supplying mechanism configured to supply processed gas into the chamber; a gas discharging mechanism configured to discharge the gas from the chamber; a wafer supporting member configured to mount the wafer; a heater including a heater element configured to heat the wafer up to a predetermined temperature and a heater electrode molded integrally with the heater element; an electrode part connected to the heater electrode and configured to applied a voltage to the heater element via the heater electrode; a base configured to fix the electrode part; and a rotational drive control mechanism configured to rotate the wafer; wherein at least a part of a connection portion of the heater electrode and the electrode part is positioned under the upper surface of the base. | 02-17-2011 |
20110092075 | MANUFACTURING APPARATUS AND METHOD FOR SEMICONDUCTOR DEVICE - A semiconductor device manufacturing apparatus includes a chamber in which a wafer is loaded; a first gas supply unit for supplying a process gas into the chamber; a gas exhaust unit for exhausting a gas from the chamber; a wafer support member on which the wafer is placed; a ring on which the wafer support member is placed; a rotation drive control unit connected to the ring to rotate the wafer; a heater disposed in the ring and comprising a heater element for heating the wafer to a predetermined temperature and including an SiC layer on at least a surface, and a heater electrode portion molded integrally with a heater element and including an SiC layer on at least a surface; and a second gas supply unit for supplying an SiC source gas into the ring. | 04-21-2011 |
20110312187 | MANUFACTURING APPARATUS AND METHOD FOR SEMICONDUCTOR DEVICE AND CLEANING METHOD OF MANUFACTURING APPARATUS FOR SEMICONDUCTOR - A manufacturing apparatus for a semiconductor device, including: a reaction chamber configured to perform film formation on a wafer; a process gas supplying mechanism provided in an upper part of the reaction chamber and configured to introduce process gas to an interior of the reaction chamber; a gas discharging mechanism provided in a lower part of the reaction chamber and configured to discharge gas from the reaction chamber; a supporting member configured to hold the wafer; a cleaning gas supplying mechanism provided in an outer periphery of the supporting member and configured to emit cleaning gas in an outer periphery direction below an upper end of the supporting member; a heater configured to heat the wafer; and a rotary driving mechanism configured to rotate the wafer. | 12-22-2011 |
20120184054 | MANUFACTURING APPARATUS AND METHOD FOR SEMICONDUCTOR DEVICE - Provided is a semiconductor manufacturing apparatus including: a reaction chamber including a gas supply inlet and a gas exhaust outlet, and into which a wafer is to be introduced; a process gas supply mechanism that supplies process gas into the reaction chamber from the gas supply inlet of the reaction chamber; a wafer retaining member that is arranged in the reaction chamber and that retains the wafer; a heater that heats the wafer retained by the wafer retaining member to a predetermined temperature; a rotation drive control mechanism that rotates the wafer retaining member together with the wafer; a gas exhaustion mechanism that exhausts gas in the reaction chamber from the gas exhaust outlet of the reaction chamber; and a drain that is disposed at a bottom portion near a wall surface in the reaction chamber and that collects and discharges oily silane that drips from the wall surface. | 07-19-2012 |
20120244685 | Manufacturing Apparatus and Method for Semiconductor Device - A semiconductor manufacturing apparatus includes: a plurality of reaction chambers into which wafers are introduced and deposition process is performed; a material gas supply mechanism that includes a plurality of material gas supply lines that respectively supply a material gas to the plurality of reaction chambers and a flow rate control mechanism that controls a flow rate of the marital gas in the material gas supply lines; a carrier gas supply mechanism that includes a plurality of carrier gas supply lines that respectively supplies a carrier gas into the plurality of reaction chambers; and a material gas switching mechanism that intermittently opens and closes the plurality of material gas supply lines respectively so that at least one of the plurality of material gas supply lines comes to be in an opened state at a same time, and sequentially switches the reaction chamber to which the material gas is supplied. | 09-27-2012 |
20120291697 | MANUFACTURING APPARATUS AND METHOD FOR SEMICONDUCTOR DEVICE - An apparatus for manufacturing a semiconductor device includes an out-heater including a heater element formed in an annular shape with a disconnected portion at one place, a first electrode component connected to a first heater electrode part of the heater element, a second electrode component connected to a second heater electrode part of the heater element, and a base including a first groove in which the first electrode component is fixedly disposed, and a second groove in which the second electrode component is movably disposed and a groove width in a circumferential direction of the heater element is formed such that a width of a second gap formed between a side of the second electrode component and an inner wall of the groove is wider than a width of a first gap formed between a side of the first electrode component and an inner wall of the first groove. | 11-22-2012 |
20130084690 | MANUFACTURING APPARATUS AND METHOD FOR SEMICONDUCTOR DEVICE - A semiconductor device manufacturing apparatus includes a chamber in which a wafer is loaded; a first gas supply unit for supplying a process gas into the chamber; a gas exhaust unit for exhausting a gas from the chamber; a wafer support member on which the wafer is placed; a ring on which the wafer support member is placed; a rotation drive control unit connected to the ring to rotate the wafer; a heater disposed in the ring and comprising a heater element for heating the wafer to a predetermined temperature and including an SiC layer on at least a surface, and a heater electrode portion molded integrally with a heater element and including an SiC layer on at least a surface; and a second gas supply unit for supplying an SiC source gas into the ring. | 04-04-2013 |
20150090693 | FILM FORMATION APPARATUS AND FILM FORMATION METHOD - A film formation apparatus according to an embodiment includes: a film formation chamber performing film formation on a substrate; a cylindrical liner provided inside of a sidewall of the film formation chamber; a process-gas supply unit provided at a top of the film formation chamber and having a first gas ejection hole supplying a process gas to inside of the liner; a first heater provided outside the liner in the film formation chamber and heating the substrate from above; a second heater heating the substrate from below; and a shielding gas supply unit having a plurality of second gas ejection holes supplying a shielding gas to a position closer to a sidewall of the film formation chamber than a position of the first gas ejection hole. | 04-02-2015 |
Patent application number | Description | Published |
20100021631 | COATING APPARATUS AND COATING METHOD - In a coating apparatus, a distributor plate | 01-28-2010 |
20100248458 | COATING APPARATUS AND COATING METHOD - The present invention provides a coating apparatus capable of efficiently performing a deposition process and also provides an efficient coating method. | 09-30-2010 |
20110064878 | APPARATUS AND METHOD FOR FILM DEPOSITION - A deposition apparatus | 03-17-2011 |
20110064885 | APPARATUS AND METHOD FOR FILM DEPOSITION - The deposition apparatus | 03-17-2011 |
20110114013 | FILM DEPOSITION APPARATUS AND METHOD - A deposition apparatus | 05-19-2011 |
20110200749 | FILM DEPOSITION APPARATUS AND METHOD - A chamber includes at its upper section a gas inlet from which to introduce a deposition gas. The inner walls of the chamber are covered by a cylindrical liner, and the chamber houses a susceptor assembly on which to place a semiconductor substrate. The liner includes a barrel section inside which the susceptor assembly is placed; a head section that is located right below the gas inlet and smaller in horizontal cross-sectional area than the barrel section; and a stepped section that connects the barrel section and the head section. The susceptor assembly is formed by fixing a ring plate to a susceptor via support posts. The ring plate covers the periphery of the stepped section of the liner. By the deposition gas flowing in a downward direction from the gas inlet into the chamber, a crystalline film is formed on the substrate positioned on the susceptor assembly. | 08-18-2011 |
20110206866 | DEPOSITION APPARATUS AND METHOD - A deposition apparatus | 08-25-2011 |
20110265710 | FILM FORMING APPARATUS AND METHOD - A film-forming apparatus includes a chamber in which a substrate is to be placed, a reaction gas supply portion that supplies a reaction gas into the chamber, a heater that heats the substrate, a radiation thermometer that is provided outside the chamber to measure the temperature of the substrate by receiving radiant light from the substrate, and a tubular member that protects an optical path of radiant light between the substrate and the radiation thermometer. An inert gas is supplied from an inert gas supply portion to the tubular member. The tubular member preferably has an inner peripheral surface and an outer peripheral surface made of a material having a lower emissivity than the inner peripheral surface. | 11-03-2011 |
20120028445 | SUSCEPTOR TREATMENT METHOD AND A METHOD FOR TREATING A SEMICONDUCTOR MANUFACTURING APPARATUS - A susceptor treatment method including placing a first substrate on a susceptor and forming a Si film on the first substrate by epitaxial growth, placing a second substrate on the susceptor in place of the first substrate and forming a SiC film on the second substrate by epitaxial growth, and allowing HCl gas to flow downward from above the susceptor while the susceptor, from which the second substrate has been removed, is heated to a temperature and rotated to remove the remaining crystalline grains derived from the epitaxial growth of Si film and the SiC film on the susceptor. | 02-02-2012 |
20120031330 | SEMICONDUCTOR SUBSTRATE MANUFACTURING APPARATUS - According to this embodiment, a semiconductor substrate manufacturing apparatus for epitaxial growth in which gases are supplied to a wafer placed on a susceptor and in which a heater is provided on the back surface of the susceptor. As a result of this epitaxial growth, SiC film is deposited onto the susceptor in the film-forming chamber. The susceptor is then moved into a separate chamber and the SiC film deposited on the susceptor during the epitaxial process is removed. After removal of SiC film, regeneration of the SiC film of the susceptor occurs. This semiconductor substrate manufacturing apparatus makes it possible to remove film deposited on a susceptor during epitaxial growth that would otherwise limit manufacturing yield. | 02-09-2012 |
20120070577 | FILM-FORMING APPARATUS AND FILM-FORMING METHOD - A film-forming apparatus and film-forming method is provided that includes a reflector system capable of adjusting the temperature distribution of a substrate. The essential role of a reflector is to reduce the output of a heater by reflecting radiation heat from the heater and to protect members provided below the heater from heat. When a silicon wafer is heated by a first heater and a second heater, the temperature of the silicon wafer becomes higher in the inner circumferential part of the wafer rather than in the outer circumferential part of the silicon wafer. When a ring-shaped reflector is used, radiation heat is reflected by the ring-shaped portion, but is not reflected by the inner circumferential part of the reflector. Therefore, the use of a ring-shaped reflector makes it possible to allow a wafer to have an even heating distribution. | 03-22-2012 |
20120244684 | FILM-FORMING APPARATUS AND METHOD - A film-forming apparatus and method is provided that includes a reflector and insulator capable of suppressing the thermal degradation of components in close proximity to the heater in a film-forming apparatus. In a film-forming apparatus the reflector is used in combination with insulator. Specifically, in a film-forming apparatus a reflector is disposed below a heater with the insulator placed below the reflector. The insulator absorbs the radiant heat from the heater thus suppressing an excessive rise in temperature around the heater, it is therefore possible to prevent thermal degradation of components in close proximity of the heater. For example, when the temperature of a semiconductor substrate is 1650° C., the temperature of the quartz heater base maybe about 1000° C. This is lower than the softening point temperature of the quartz heater base, preventing deformation of the heater base. | 09-27-2012 |
20120325138 | FILM-FORMING APPARATUS AND FILM-FORMING METHOD - A film-forming apparatus and method comprising a film-forming chamber for supplying a reaction gas into, a cylindrical shaped liner provided between an inner wall of the film-forming chamber and a space for performing a film-forming process, a main-heater for heating a substrate placed inside the liner, from the bottom side, a sub-heater cluster provided between the liner and the inner wall, for heating the substrate from the top side, wherein the main-heater and the sub-heater cluster are resistive heaters, wherein the sub-heater cluster has a first sub-heater provided at the closest position to the substrate, and a second sub-heater provided above the first sub-heater, wherein the first sub-heater heats the substrate in combination with the main-heater, the second sub-heater heats the liner at a lower output than the first sub-heater, wherein each temperature of the main-heater, the first sub-heater, and the second sub-heater is individually controlled. | 12-27-2012 |
20130036968 | FILM-FORMING APPARATUS AND METHOD - A film-forming apparatus and method comprising a film-forming chamber for supplying a reaction gas, a cylindrical shaped liner provided in the film-forming chamber, a straightening vane provided above the liner for the reaction gas to pass through, wherein the outside of the film-forming chamber connects the inside of the liner via a substrate transfer portion provided at the wall of the film-forming chamber by moving the straightening vane from the position that the straightening vane closes the upper opening of the liner. A substrate supporting portion provided in the liner, for supporting the substrate before the film-forming to move the substrate in a vertical direction, a substrate transfer unit capable of moving inside the film-forming chamber through the substrate transfer portion, wherein the substrate is transferred between the substrate supporting portion and the substrate transfer unit. | 02-14-2013 |
20130068164 | HEATING UNIT AND FILM-FORMING APPARATUS - A heating unit and a film-forming apparatus comprising of a film-forming chamber, a heating unit for heating a substrate placed in the film-forming chamber, wherein the heating unit comprises of a heat source with a plane surfaced top, an electrode contacting electrically with the heat source, wherein the heat source has a ring-shape or a disk-shape that is formed by an individual, or plurality of heat source members. Wherein the heat source is comprised of a material selected from a group consisting of a carbon (C) material, a carbon material or a silicon carbide (SiC) material coated with silicon carbide (SiC), and a silicon carbide (SiC) material, and wherein the heat source has a ratio of the width (a) of the top portion direction to the thickness (X) of the side part (a/X) is 3 to 10. | 03-21-2013 |
20130084390 | FILM-FORMING APPARATUS AND FILM-FORMING METHOD - A film-forming apparatus and film-forming method comprising a film-forming chamber for being supplied a reaction gas, a substrate placed on a susceptor in the film-forming chamber, a heater for heating the substrate, a transfer chamber adjacent to the film-forming chamber, transferring the substrate to the film-forming chamber, measuring the temperature of the substrate, rotating the substrate via the susceptor, a detecting unit for detecting rotating direction and angle of the rotating unit, generating data of the substrate using temperature data of the substrate measured by the temperature-measuring unit while the substrate is rotating, and positional data of coordinates at which temperature is measured, generated based on the rotating direction and angle, acquiring data of the movement direction and amount of positional error of the substrate based on the data, a control unit for adjusting position of the transfer unit based on the amount of position error of the substrate. | 04-04-2013 |
20130104800 | FILM-FORMING METHOD AND FILM-FORMING APPARATUS | 05-02-2013 |
20130247816 | FILM-FORMING APPARATUS FOR THE FORMATION OF SILICON CARBIDE AND FILM-FORMING METHOD FOR THE FORMATION OF SILICON CARBIDE - A film-forming apparatus and method for the formation of silicon carbide comprising, a film-forming chamber to which a reaction gas is supplied, a temperature-measuring unit which measures a temperature within the chamber, a plurality of heating units arranged inside the chamber, an output control unit which independently controls outputs of the plurality of heating units, a substrate-transferring unit which transfers a substrate into, and out of the chamber, wherein the output control unit turns off or lowers at least one output of the plurality of heating units when the film forming process is completed, when the temperature measured by the temperature-measuring unit reaches a temperature at which the substrate-transferring unit is operable within the chamber, then at least one output of the plurality of heating units turned off or lowered, is turned on or raised, and the substrate is transferred out of the film-forming chamber by the substrate-transferring unit. | 09-26-2013 |
Patent application number | Description | Published |
20080208437 | Fuel-Injector For Internal-Combustion Engine, Methods of Controlling Fuel-Injector, Electronic Control Unit for Fuel-Injector, and Fuel Injection System for Direct Fuel-Injection Engine - There was a problem that various fuel spray shapes cannot be obtained according to operating conditions of a direct injection engine. There is provided a giant magnetostrictive element type injector which controls the change rate (rising slope) or peak value of a supply current applied to a solenoid for magnetic field generation which displaces a giant magnetostrictive element according to requests of an engine. The steeper the rising slope of the supply current to the solenoid, the higher becomes a lifting speed of a plunger, the higher becomes the initial speed of a fuel spray, and the longer the penetration can be. The gentler the rising slope thereof, the lower becomes the lifting speed of the plunger, the lower becomes the initial speed of the fuel spray, and the shorter the penetration can be. Further, the larger the peak value of the supply current, the larger the lift amount of the plunger can be and the larger becomes the fuel flow rate, allowing an increase in fuel spray density (resulting in a fuel spray that is not easily crushed). The smaller the peak value of the supply current, the smaller becomes the fuel flow rate, allowing a decrease in fuel spray density (resulting in a fuel spray that is easily crushed). | 08-28-2008 |
20090007564 | Method and Apparatus for Controlling an Internal Combustion Engine - A control device for an internal combustion engine, which comprise a turbocharger, of which turbo flow rate is made variable, and an intake valve provided with a variable valve mechanism and in which mirror cycle is performed, the control device comprising: device, which calculates an intake air quantity per unit time and an intake air quantity per cycle on the basis of torque required to the internal combustion engine; device, which controls the turbocharger so that with the intake air quantity per unit time, supercharging pressure is further increased in that range, in which a ratio of supercharging pressure and exhaust pressure is equal to or less than a predetermined value; and device, which controls the variable valve mechanism on the basis of the supercharging pressure and the intake air quantity per cycle. | 01-08-2009 |
20090017987 | Control Method and Control Device for Engine - In a control method and control device for an engine, in order to prevent torque control precision from deteriorating while performing an ignition retard control in a variable valve engine, when a torque down control is carried out by using the ignition retard, combustion duration is calculated in consideration of valve timing or an engine rpm for each driving state, and a characteristic of a reference ignition timing efficiency curve is corrected on the basis of a difference between the combustion duration and a combustion duration reference value which is set in advance. | 01-15-2009 |
20100305832 | Engine Control Device - There is provided an engine control device which can accurately calculate a compensation coefficient used for transient compensation of an ignition timing without involving a complicated and large-scale calculation model in order to prevent a combustion deterioration and the like caused by a mechanical response delay and the like of the variable valve timing mechanism at a transition time such as an acceleration/deceleration time. The angular difference between each current real phase of the intake/exhaust valves | 12-02-2010 |
20110231081 | Control Method of Internal Combustion Engine - The invention provides a method for preferably controlling an internal combustion engine by precisely estimating a current value of a temperature of an exhaust device of an internal combustion engine provided with a variable valve, an exhaust turbo supercharger and the like, and controlling an affector of a temperature of an exhaust gas on the basis of a difference between a reference value of the exhaust device temperature and the current value of the exhaust device temperature. The method computes a temperature of an exhaust gas on the basis of a rotating speed, a charging efficiency, an ignition timing, an equivalent ratio, an external EGR rate, an exhaust valve opening timing, and a supercharging pressure, estimates a temperature of an exhaust device on the basis of the exhaust gas temperature, an amount of an intake air, a temperature of a fluid around the exhaust device and a flow rate around the exhaust device, and transiently corrects at least one of the ignition timing, the equivalent ratio, the external EGR rate, and the exhaust valve opening timing, on the basis of the estimation value and the reference value. | 09-22-2011 |
20120290193 | Internal Combustion Engine Control Device - An internal combustion engine control device is provided which can accurately estimate intake pipe temperature behavior during transient time even in an internal combustion engine embedded with a variable valve or a turbocharger. The internal combustion engine control device estimates transient behavior of the intake pipe temperature, on the basis of a flow rate (dGafs/dt) of gas flowing into the intake pipe, a flow rate (dGcyl/dt) of gas flowing from the intake pipe, an intake pipe pressure Pin, and a temporal changing rate (dPin/dt) of the intake pipe pressure. The device performs knocking control during transient time, on the basis of the estimated transient behavior of the intake pipe temperature. | 11-15-2012 |
Patent application number | Description | Published |
20110309355 | SEMICONDUCTOR DEVICE - An object is to provide a semiconductor device having good electrical characteristics. A gate insulating layer having a hydrogen concentration less than 6×10 | 12-22-2011 |
20120001168 | SEMICONDUCTOR DEVICE - In a transistor including an oxide semiconductor, hydrogen in the oxide semiconductor leads to degradation of electric characteristics of the transistor. Thus, an object is to provide a semiconductor device having good electrical characteristics. An insulating layer in contact with an oxide semiconductor layer where a channel region is formed is formed by a plasma CVD method using a silicon halide. The insulating layer thus formed has a hydrogen concentration less than 6×10 | 01-05-2012 |
20120061676 | THIN FILM TRANSISTOR - A highly reliable transistor in which change in electrical characteristics is suppressed is provided. A highly reliable transistor in which change in electrical characteristics is suppressed is manufactured with high productivity. A display device with less image deterioration over time is provided. An inverted staggered thin film transistor which includes, between a gate insulating film and impurity semiconductor films functioning as source and drain regions, a semiconductor stacked body including a microcrystalline semiconductor region and a pair of amorphous semiconductor regions. In the microcrystalline semiconductor region, the nitrogen concentration on the gate insulating film side is low and the nitrogen concentration in a region in contact with the amorphous semiconductor is high. Further, an interface with the amorphous semiconductor has unevenness. | 03-15-2012 |
20120126212 | Light-Emitting Element, Light-Emitting Device, Lighting Device, and Electronic Devices - A light-emitting element which at least includes a monomolecular layer including a luminescent center material with a fluorescent light-emitting property, and a monomolecular layer including a host material with a carrier (electron or hole)-transport property and a band gap larger than a band gap (note that a band gap refers to the energy difference between a HOMO level and a LUMO level) of the luminescent center material, between a pair of electrodes, in which the monomolecular layer including the host material and the monomolecular layer including the luminescent center material share the same interface, is provided. | 05-24-2012 |
20120205632 | LIGHT-EMITTING ELEMENT - A light-emitting element having high external quantum efficiency is provided. A light-emitting element having a long lifetime is provided. A light-emitting element is provided which includes a light-emitting layer containing a phosphorescent compound, a first organic compound, and a second organic compound between a pair of electrodes, in which a combination of the first organic compound and the second organic compound forms an exciplex (excited complex). The light-emitting element transfers energy by utilizing an overlap between the emission spectrum of the exciplex and the absorption spectrum of the phosphorescent compound and thus has high energy transfer efficiency. Therefore, a light-emitting element having high external quantum efficiency can be obtained. | 08-16-2012 |
20120205687 | LIGHT-EMITTING BODY, LIGHT-EMITTING LAYER, AND LIGHT-EMITTING DEVICE - An organic light-emitting element having high efficiency and long lifetime is provided. An organic light-emitting body is provided which includes a host having a high electron-transport property (n-type host), a host having a high hole-transport property (p-type host), and a guest such as an iridium complex and in which the n-type host and the p-type host are located so as to be adjacent to each other. When an electron and a hole are injected to such a light-emitting body, the electron is trapped by the n-type host and the hole is trapped by the p-type host. Then, both the electron and the hole are injected to the guest, and thus the guest is brought into an excited state. In this process, less thermal deactivation occurs and the working rate of the guest is high; thus, highly efficient light emission can be obtained. | 08-16-2012 |
20120206035 | LIGHT-EMITTING ELEMENT - Provided is a light-emitting element with high external quantum efficiency, or a light-emitting element with a long lifetime. The light-emitting element includes, between a pair of electrodes, a light-emitting layer including a guest material and a host material, in which an emission spectrum of the host material overlaps with an absorption spectrum of the guest material, and phosphorescence is emitted by conversion of an excitation energy of the host material into an excitation energy of the guest material. By using the overlap between the emission spectrum of the host material and the absorption spectrum of the guest material, the energy smoothly transfers from the host material to the guest material, so that the energy transfer efficiency of the light-emitting element is high. Accordingly, a light-emitting element with high external quantum efficiency can be achieved. | 08-16-2012 |
20120217487 | Light-Emitting Device - A light-emitting element includes a light-emitting layer including a guest, an n-type host and a p-type host between a pair of electrodes, where the difference between the energy difference between a triplet excited state and a ground state of the n-type host (or p-type host) and the energy difference between a triplet excited state and a ground state of the guest is 0.15 eV or more. Alternatively, in such a light-emitting element, the LUMO level of the n-type host is higher than the LUMO level of the guest by 0.1 eV or more, or the HOMO level of the p-type host is lower than the HOMO level of the guest by 0.1 eV or more. | 08-30-2012 |
20120242219 | LIGHT-EMITTING ELEMENT - A light-emitting element having high external quantum efficiency is provided. A light-emitting element having low drive voltage is provided. Provided is a light-emitting element which includes a light-emitting layer containing a phosphorescent compound, a first organic compound, and a second organic compound between a pair of electrodes. A combination of the first organic compound and the second organic compound forms an exciplex (excited complex). An emission spectrum of the exciplex overlaps with an absorption band located on the longest wavelength side of an absorption spectrum of the phosphorescent compound. A peak wavelength of the emission spectrum of the exciplex is longer than or equal to a peak wavelength of the absorption band located on the longest wavelength side of the absorption spectrum of the phosphorescent compound. | 09-27-2012 |
20130165653 | Organometallic Complex, Light-Emitting Element, Light-Emitting Device, Electronic Device, and Lighting Device - As a novel substance having a novel skeleton, an organometallic complex with high emission efficiency which achieves improved color purity by a reduction of half width of an emission spectrum is provided. One embodiment of the present invention is an organometallic complex in which a β-diketone and a six-membered heteroaromatic ring including two or more nitrogen atoms inclusive of a nitrogen atom that is a coordinating atom are ligands. In General Formula (G1), X represents a substituted or unsubstituted six-membered heteroaromatic ring including two or more nitrogen atoms inclusive of a nitrogen atom that is a coordinating atom. Further, R | 06-27-2013 |
20140001470 | SEMICONDUCTOR DEVICE | 01-02-2014 |
20140151662 | Light-Emitting Element, Light-Emitting Device, Electronic Appliance, and Lighting Device - A light-emitting element in which a light-emitting layer contains an organic compound capable of emitting phosphorescence is provided. A light-emitting element which can have low driving voltage, high current efficiency, or a long lifetime is provided. In a light-emitting element in which a light-emitting layer is interposed between a pair of electrodes, the light-emitting layer contains an organic compound. The organic compound has a 1,2,4-triazole skeleton, a phenyl skeleton, an arylene skeleton, and a Group 9 metal or a Group 10 metal. The nitrogen atom at the 4-position of the 1,2,4-triazole skeleton coordinates to the Group 9 metal or the Group 10 metal. The nitrogen atom at the 1-position of the 1,2,4-triazole skeleton is bonded to a phenyl skeleton. The arylene skeleton is bonded to the 3-position of the 1,2,4-triazole skeleton and the Group 9 metal or the Group 10 metal. | 06-05-2014 |
20140234664 | PEELING METHOD, SEMICONDUCTOR DEVICE, AND PEELING APPARATUS - To improve peelability, yield in a peeling step, and yield in manufacturing a flexible device. A peeling method is employed which includes a first step of forming a peeling layer containing tungsten over a support substrate; a second step of forming, over the peeling layer, a layer to be peeled formed of a stack including a first layer containing silicon oxynitride and a second layer containing silicon nitride in this order and forming an oxide layer containing tungsten oxide between the peeling layer and the layer to be peeled; a third step of forming a compound containing tungsten and nitrogen in the oxide layer by heat treatment; and a fourth step of peeling the peeling layer from the layer to be peeled at the oxide layer. | 08-21-2014 |
20140353654 | Light-Emitting Element, Light-Emitting Device, Lighting Device, and Electronic Devices - A light-emitting element which at least includes a monomolecular layer including a luminescent center material with a fluorescent light-emitting property, and a monomolecular layer including a host material with a carrier (electron or hole)-transport property and a band gap larger than a band gap (note that a band gap refers to the energy difference between a HOMO level and a LUMO level) of the luminescent center material, between a pair of electrodes, in which the monomolecular layer including the host material and the monomolecular layer including the luminescent center material share the same interface, is provided. | 12-04-2014 |
20150187855 | SEMICONDUCTOR DEVICE - A display device that includes a first flexible substrate, a first bonding layer over the first flexible substrate, a first insulating film over the first bonding layer, a first element layer over the first insulating film, a second element layer over the first element layer, a second insulating film over the second element layer, a second bonding layer over the second insulating film, and a second flexible substrate over the second bonding layer is provided. The first element layer includes a pixel portion and a circuit portion. The pixel portion includes a display element and a first transistor, and the circuit portion includes a second transistor. The second element layer includes a coloring layer and a light-blocking layer. | 07-02-2015 |
20150295061 | SEMICONDUCTOR DEVICE - An object is to provide a semiconductor device having good electrical characteristics. A gate insulating layer having a hydrogen concentration less than 6×10 | 10-15-2015 |
20150340638 | LIGHT-EMITTING ELEMENT - Provided is a light-emitting element with high external quantum efficiency, or a light-emitting element with a long lifetime. The light-emitting element includes, between a pair of electrodes, a light-emitting layer including a guest material and a host material, in which an emission spectrum of the host material overlaps with an absorption spectrum of the guest material, and phosphorescence is emitted by conversion of an excitation energy of the host material into an excitation energy of the guest material. By using the overlap between the emission spectrum of the host material and the absorption spectrum of the guest material, the energy smoothly transfers from the host material to the guest material, so that the energy transfer efficiency of the light-emitting element is high. Accordingly, a light-emitting element with high external quantum efficiency can be achieved. | 11-26-2015 |
Patent application number | Description | Published |
20120329596 | SPEED REDUCTION MECHANISM AND MOTOR TORQUE TRANSMISSION DEVICE INCLUDING THE SPEED REDUCTION MECHANISM - A speed reduction mechanism includes: a speed reduction unit that includes an input member formed of an external gear that makes circular motion about a rotation axis with an eccentric amount, and a rotation force applying member formed of an internal gear that is in mesh with the input member; and a lubricating oil supply unit that supplies lubricating oil to a bearing of the speed reduction unit. The lubricating oil supply unit includes an oil tank arranged outside of the rotation force applying member, an oil delivery passage that delivers the lubricating oil to the oil tank, and a first oil introduction passage that introduces the lubricating oil from the oil tank to the bearing. The lubricating oil is delivered to the oil delivery passage through pumping action of the input member based on the circular motion. | 12-27-2012 |
20120329597 | SPEED REDUCTION MECHANISM AND MOTOR TORQUE TRANSMISSION DEVICE INCLUDING THE SPEED REDUCTION MECHANISM - A reduction-transmission mechanism includes: an input member formed of an external gear that makes circular motion with an eccentric amount; a rotation force applying member formed of an internal gear that is in mesh with the input member; and output members that receive and output rotation force applied to the input member by the rotation force applying member, and that are passed through the respective pin insertion holes. Each of the output members is provided with a needle roller bearing at a portion that is able to contact an inner periphery, which defines a corresponding one of the through-holes, and the input member has third oil supply passages that extend from the center hole to the pin insertion holes, and lubricating oil is supplied to the needle roller bearings through the third oil supply passages by centrifugal force generated in accordance with rotation of the motor shaft. | 12-27-2012 |
20130056321 | DRIVING FORCE TRANSMISSION APPARATUS - A driving force transmission apparatus includes: a first cam mechanism that converts rotational force from a housing into first cam thrust force used as clutch force of a main clutch when the first cam mechanism is actuated through clutch action of a pilot clutch; and a second cam mechanism that is actuated prior to conversion of the rotational force into the first cam thrust force by the first cam mechanism, and that generates second cam thrust force for reducing an interval between clutch plates of the main clutch. The second cam mechanism includes an input cam member that rotates upon receiving rotational force used as actuating force of the input cam member from a cam actuating driving source, and an output cam member that generates the second cam thrust force between the output cam member and the input cam member and outputs the second cam thrust force. | 03-07-2013 |
20130143707 | SPEED REDUCTION MECHANISM, AND MOTOR TORQUE TRANSMISSION DEVICE INCLUDING THE SAME - In a reduction-transmission mechanism, a plurality of output members are arranged at such positions that a size that is the sum of a fitting clearance formed between an outer periphery of each output member and a corresponding one of needle roller bearings, a fitting clearance formed between the needle roller bearing and an inner periphery of an input member, which defines a corresponding one of a plurality of pin insertion holes, and a radial internal clearance in the needle roller bearing is smaller than a size that is the sum of a fitting clearance formed between a ball bearing and an outer periphery of an eccentric portion, a fitting clearance formed between the ball bearing and an inner periphery of the input member, which defines a center hole, and a radial internal clearance in the ball bearing. | 06-06-2013 |
20130178319 | SPEED REDUCTION MECHANISM, AND MOTOR TORQUE TRANSMISSION DEVICE INCLUDING THE SAME - When a bearing includes outer and inner rings and the outer ring is fitted to the inner periphery of an input member, which defines a center hole, with a clearance and the inner ring is fitted to an eccentric portion with a clearance, a size between a second axis and a third axis is set to a size that is smaller than or equal to half of a size obtained by adding a diameter difference between an outside diameter of the bearing and an inside diameter of the input member, which defines the center hole, a diameter difference between an inside diameter of the bearing and an outside diameter of the eccentric portion and an operating clearance of the bearing in a state where the input member has been moved to contact the housing on a line perpendicular to the second axis and a fourth axis. | 07-11-2013 |
20130178322 | SPEED REDUCTION MECHANISM, AND MOTOR TORQUE TRANSMISSION DEVICE INCLUDING THE SAME - When an outer ring is fitted to an inner periphery of an input member, which defines a center hole, and an inner ring is fitted to an eccentric portion with clearances in a reduction-transmission mechanism, in a state where tooth tips of the input member contact bottomlands of a rotation force applying member on a line perpendicular to a second axis and a fourth axis, a size between the second axis and a third axis is set to a size that is smaller than or equal to half of a size obtained by adding a diameter difference between an outside diameter of a ball bearing and an inside diameter of the input member, which defines the center hole, a diameter difference between an inside diameter of the ball bearing and an outside diameter of the eccentric portion and an operating clearance of the ball bearing. | 07-11-2013 |
20130186727 | CLUTCH PLATE AND METHOD OF PRODUCING SAME - A clutch plate in an annular shape, the clutch plate includes: a plurality of lubricating grooves on one end face and the other end face of the clutch plate in an axial direction; and a plurality of windows passing through the clutch plate in the axial direction. The lubricating grooves are formed with plastic deformation, in a same phase on both the end faces, and extended up to outer peripheral edges and inner peripheral edges of both the end faces. A plurality of intersection points where the lubricating grooves intersect with each other are positioned in other areas than at least one of the outer peripheral edges, radially outer edges of the windows, radially inner edges of the windows, and the inner peripheral edges, of both the end faces. | 07-25-2013 |
20130256083 | DRIVING FORCE TRANSMISSION APPARATUS, AND FOUR-WHEEL-DRIVE VEHICLE INCLUDING THE DRIVING FORCE TRANSMISSION APPARATUS - A driving force transmission apparatus includes a cam mechanism that converts motor torque from an electric motor into first cam thrust force and second cam thrust force. The cam mechanism includes: a cam member that rotates upon reception of the motor torque from an electric motor; a rolling member that rolls on the cam member; and a retainer that outputs the first cam thrust force and the second cam thrust force toward a multiple disk clutch as the rolling member rolls. The rotation of the retainer around a rotation axis is restricted, and the retainer moves in a direction of the rotation axis while retaining the rolling member such that the rolling member is rollable. | 10-03-2013 |
20130257202 | SPEED REDUCTION MECHANISM, AND MOTOR TORQUE TRANSMISSION DEVICE INCLUDING THE SPEED REDUCTION MECHANISM - In a reduction-transmission mechanism, an input member is arranged at such a position that a size obtained by adding a fitting clearance formed between a ball bearing and an outer periphery of an eccentric portion, a fitting clearance formed between the ball bearing and an inner periphery of the input member, which defines a center hole, and a radial internal clearance of the ball bearing is smaller than a size obtained by adding a fitting clearance formed between an outer periphery of each of a plurality of output members and a corresponding one of needle roller bearings, a fitting clearance formed between each of the needle roller bearings and an inner periphery of the input member, which defines a corresponding one of a plurality of pin insertion holes, and a radial internal clearance of each of the needle roller bearings. | 10-03-2013 |
20130260941 | MOTOR DEVICE FORCE TRANSMISSION APPARATUS - In a motor driving force transmission apparatus, a cam mechanism includes an input cam member that rotates upon reception of motor torque from a cam actuating electric motor and an output cam member that outputs cam thrust force through movement due to rotation of the input cam member, and rotation of the output cam member around an axis of a housing is restricted by a restricting member fixed to the housing. | 10-03-2013 |
20130277167 | DRIVING FORCE TRANSMISSION APPARATUS - In a driving force transmission apparatus, an oil inlet portion for introducing hydraulic fluid from one of spaces to the other one of the spaces is formed, and an apparatus case has an oil outlet portion for delivering the hydraulic fluid from the other one of the spaces to an outside of the other one of the spaces with an oil delivery capacity lower than an oil introducing capacity of the oil inlet portion. A pressure regulation valve for bringing the oil inlet portion into an open state upon reception of hydraulic pressure higher than or equal to a predetermined pressure from hydraulic fluid is arranged at the oil inlet portion. | 10-24-2013 |
20130324342 | MOTOR DRIVING FORCE TRANSMISSION DEVICE - A motor driving force transmission device includes electric motors which produce motor driving force with which a rear differential is operated and a speed reduction and transmission mechanism which reduces the speed of the motor driving force of the electric motors and transmits it to the rear differential. The speed reduction and transmission mechanism has eccentric cams which rotate as the electric motors are driven, transmission members which rotate as the eccentric cams rotate, and is disposed on an outer circumference of the rear differential. | 12-05-2013 |
20130331217 | MOTOR DRIVING FORCE TRANSMISSION DEVICE - A motor driving force transmission device including a speed reduction and transmission mechanism which transmits a motor driving force to a rear differential, a first electric motor that is connected to the rear differential via the speed reduction and transmission mechanism and which produces a first motor driving force, a second electric motor that is connected to the first electric motor and the speed reduction and transmission mechanism and which produces a second motor driving force, and an ECU. The ECU outputs a control signal to drive both the first electric motor and the second electric motor when a driving torque required for the rear differential is equal to or larger than a predetermined torque, and outputs a control signal to drive alternately the first electric motor and the second electric motor when the driving torque required for the rear differential is smaller than the predetermined torque. | 12-12-2013 |
20140018202 | SPEED REDUCTION MECHANISM AND MOTOR TORQUE TRANSMISSION APPARATUS INCLUDING THE SAME - A speed reduction mechanism includes a bearing mechanism arranged on an axis of an output mechanism and including ball bearings that are arranged in parallel with each other in an axial direction of a differential case. The differential case is rotatably supported by the ball bearings of the bearing mechanism such that the entirety of an outer periphery of one of the ball bearings faces an inner periphery of a first housing element that accommodates the differential case and that is made of a material having a stiffness lower than a stiffness of a material of a rotation force applying member, and the entirety of an outer periphery of the other one of the ball bearings faces an inner periphery of the rotation force applying member. | 01-16-2014 |
20140066252 | VEHICLE DRIVE APPARATUS - A driving force transmission apparatus includes a linkage mechanism that is able to carry out switchover between a connected state where first and second intermediate shafts are connected to each other so as to be non-rotatable relative to each other to transmit torque output from an electric motor to a rear wheel, and a disconnected state where the first and second intermediate shafts are disconnected from each other. When switching the driving force transmission apparatus from the connected state to the disconnected state, a control unit reduces the torque that is generated by the motor during a drive state where the torque output from the motor is transmitted from the first intermediate shaft to the second intermediate shaft, and switches the driving force transmission apparatus from the connected state to the disconnected state by controlling the linkage mechanism while the torque that is generated by the motor has been reduced. | 03-06-2014 |
20140066253 | VEHICLE DRIVE APPARATUS - A driving force transmission apparatus includes a linkage mechanism that is able to carry out switchover between a connected state where a first intermediate shaft and a second intermediate shaft are connected to each other so as to be non-rotatable relative to each other to transmit torque output from an electric motor to a rear wheel, and a disconnected state where the first intermediate shaft and the second intermediate shaft are disconnected from each other. A control unit reduces the torque that is generated by the electric motor, after making a rotational speed of the first intermediate shaft higher than or equal to a rotational speed of the second intermediate shaft, and then switches the driving force transmission apparatus from the disconnected state to the connected state by controlling the linkage mechanism with the torque that is generated by the motor maintained at a reduced level. | 03-06-2014 |
20140128192 | MOTOR DRIVING FORCE TRANSMISSION SYSTEM - A motor driving force transmission system includes an electric motor that generates motor torque for actuating a differential mechanism portion and outputs the motor torque, and that has a motor shaft with eccentric portions, and a bearing mechanism including a ball bearing interposed between one-side axial end portion of a housing and one-side axial end portion of a differential case, a ball bearing interposed between the other-side axial end portion of the differential case and one-side axial end portion of the motor shaft, and a ball bearing interposed between the other-side axial end portion of the housing and the other-side axial end portion of the motor shaft. An axial load is applied to the ball bearings of the bearing mechanism by a spring. | 05-08-2014 |
20140182995 | CLUTCH PLATE - In a clutch plate of an annular shape and a wet type, a plurality of lubrication grooves each taking a U-shape in cross-section are formed on a friction engaging surface on at least one end side. The groove is provided with a groove forming portion crossing the circumferential direction and blunt portions extending along both sides of the groove forming portion and connecting the friction engaging surface with the groove forming portion. Where a straight line passing across one side end of the groove and extending in a radial direction is assumed as a virtual straight line, in a section of the groove taken along a plane that is orthogonal to the virtual straight line and that includes the one side end, the width of the blunt portion on one side is in a range of 0.12 to 0.35 mm, and the depth of the blunt portion is in a range of 25 to 50 μm. | 07-03-2014 |
20140251083 | DRIVING FORCE TRANSMISSION APPARATUS - A driving force transmission apparatus including a tank which reserves lubricating oil in an accommodating space which is interposed between a housing and an inner shaft and an apparatus case which has a cylindrical accommodating portion which accommodates the housing, and in the case, the accommodating portion has an inner circumferential surface which faces an outer circumferential surface of the housing, and the tank has an oil inlet port which is opened to the inner circumferential surface of the accommodating portion and through which the lubricating oil in the accommodating space is let in based on a centrifugal force generated in association with the rotation of the housing when a four-wheel drive vehicle travels forwards in a two-wheel drive mode. | 09-11-2014 |
20140274543 | ELECTROMAGNETIC CLUTCH UNIT, FOUR-WHEEL-DRIVE VEHICLE, CONTROL METHOD FOR THE ELECTROMAGNETIC CLUTCH UNIT, AND CONTROL METHOD FOR THE FOUR-WHEEL-DRIVE VEHICLE - An electromagnetic clutch unit includes: a friction mechanism including a first friction member and a second friction member; a lock sleeve connected to an input shaft member so as to be non-rotatable relative to the input shaft member, and movable in an axial direction of the electromagnetic clutch unit between a first position at which the lock sleeve is engaged with only the input shaft member and a second position at which the lock sleeve is engaged with both an output shaft member and the input shaft member; and a pressing member that constitutes a magnetic path extending over the pressing member and the second friction member, and that presses the lock sleeve with the electromagnetic force to move the lock sleeve from the first position to the second position. | 09-18-2014 |
20140284163 | DRIVING FORCE TRANSMISSION APPARATUS AND CONTROLLER FOR DRIVING FORCE TRANSMISSON APPARATUS - A driving force transmission apparatus includes: an electric motor; a multi-disc clutch including outer clutch plates and inner clutch plates that are disposed coaxially with each other so as to be rotatable relative to each other and that are frictionally engaged with each other by being pressed in an axial direction; an input rotary member that rotates together with the outer clutch plates; an output rotary member that rotates together with the inner clutch plates; a cam mechanism that generates cam thrust force for pressing the multi-disc clutch in the axial direction upon reception of torque generated by the electric motor; a strain sensor that detects reaction force against the cam thrust force; and a spring member that is disposed between the cam mechanism and the strain sensor and that buffers an impact transmitted from the cam mechanism to the strain sensor. | 09-25-2014 |
20150025763 | DRIVING FORCE TRANSMISSION CONTROL SYSTEM - A driving force transmission control system includes: an electric motor; a multi-disc clutch; a cam mechanism that converts rotation output from the electric motor into cam thrust force that is axial force in the axial direction of the multi-disc clutch; a pressure-conversion mechanism that converts reaction force against the cam thrust force into pressure of a fluid; a pressure sensor that detects the pressure; and a control unit that computes a command value of a current supplied to the electric motor. The control unit stores the pressure of the fluid during disengagement of the multi-disc clutch, and computes the current command value based on the pressure of the fluid to which the reaction force against the cam thrust force has been applied, and the stored pressure of the fluid. | 01-22-2015 |
20150068862 | ELECTROMAGNETIC CLUTCH DEVICE - An electromagnetic clutch device includes: a meshing member; an electromagnetic coil; an armature; a cylindrical cam member; and a locking portion. The cam member is provided with a plurality of locked portions to be locked by the locking portion at different axial positions, such that the plurality of locked portions is formed adjacent to each other in a circumferential direction; the cam member rotates only by a first predetermined angle due to an axial movement of the armature from a first position to a second position, and the cam member further rotates only by a second predetermined angle due to a movement of the armature from the second position to the first position; and when locking of the locking portion is shifted from one of the plurality of locked portions to another locked portion circumferentially adjacent thereto so that the locking portion locks the another locked portion at a different axial position, the second meshing portion is meshed with the first meshing portion. | 03-12-2015 |
20150192198 | VEHICLE DRIVING FORCE DISTRIBUTION DEVICE - A vehicle driving force distribution device includes: a differential gear; a driving force transmission device; and a case member having a first accommodating chamber accommodating the differential gear and a second accommodating chamber accommodating the driving force transmission device. The case member has a first flow passage that allows lubricating oil to flow from the first accommodating chamber into the second accommodating chamber, and a second flow passage that allows lubricating oil to flow from the second accommodating chamber into the first accommodating chamber. In a two-wheel drive mode, lubricating oil flows from the second accommodating chamber into the first accommodating chamber through the second flow passage. In a four-wheel drive mode, lubricating oil flows from the first accommodating chamber into the second accommodating chamber through the first flow passage. | 07-09-2015 |
20150345566 | DRIVING FORCE TRANSMISSION DEVICE - A driving force transmission device includes: a switch member that switches a first rotary member and a second rotary member between a coupled state and a decoupled state; a second friction member that generates a frictional force between the rotary members; a piston member that has first to sixth engaged portions formed in the shape of a staircase and that presses the switch member and the second friction member in an axial direction; a biasing mechanism that presses the switch member and the second friction member toward the piston member; and an engaging member that engages with one of the plurality of engaged portions. The engaging member rotates the piston member by sliding on a plurality of tilted surfaces of the plurality of engaged portions, and the piston member is always pressed toward the engaging member by a biasing force of the biasing mechanism. | 12-03-2015 |