Patent application number | Description | Published |
20120187444 | TEMPLATE, METHOD FOR MANUFACTURING THE TEMPLATE AND METHOD FOR MANUFACTURING VERTICAL TYPE NITRIDE-BASED SEMICONDUCTOR LIGHT EMITTING DEVICE USING THE TEMPLATE - Disclosed herein is a method for manufacturing a template. The method includes growing a first nitride layer on a substrate; etching a top surface of the first nitride layer by supplying a chloride-based etching gas thereto; forming a plurality of first voids by growing a second nitride layer on the top surface of the first nitride layer; etching a top surface of the second nitride layer by supplying the etching gas thereto; and forming a plurality of second voids by growing a third nitride layer on the top surface of the second nitride layer. A method for manufacturing a nitride-based semiconductor light emitting device using the template is also disclosed. As a result, stress between lattices and dislocation defects are reduced by a plurality of voids formed in a nitride buffer layer, thereby improving quality of nitride layers grown in a template. In the case where a light emitting device is manufactured using the template, it is possible to improve workability of the manufacturing process and to enhance luminous efficacy of the light emitting device. | 07-26-2012 |
20120187445 | TEMPLATE, METHOD FOR MANUFACTURING THE TEMPLATE, AND METHOD FOR MANUFACTURING VERTICAL TYPE NITRIDE-BASED SEMICONDUCTOR LIGHT EMITTING DEVICE USING THE TEMPLATE - Disclosed is a method for manufacturing a template. The method includes growing a first nitride layer containing a Group-III material on a substrate; forming a plurality of etch barriers having different etching characteristics from the first nitride layer on the first nitride layer; forming a pillar-shaped nano structure by etching the first nitride layer in a pattern of the etch barriers using a chloride-based gas; and forming the nitride buffer layer having a plurality of voids formed therein by growing a second nitride layer on top of the nano structure. A method for manufacturing a nitride-based semiconductor light emitting device using the template is also disclosed. | 07-26-2012 |
20120217470 | NITRIDE BASED LIGHT EMITTING DEVICE WITH EXCELLENT CRYSTALLINITY AND BRIGHTNESS AND METHOD OF MANUFACTURING THE SAME - Disclosed is a nitride-based light emitting device having an inverse p-n structure in which a p-type nitride layer is first formed on a growth substrate. The light emitting device includes a growth substrate, a powder type seed layer for nitride growth formed on the growth substrate, a p-type nitride layer formed on the seed layer for nitride growth, a light emitting active layer formed on the p-type nitride layer, and an n-type ZnO layer formed on the light emitting active layer. The p-type nitride layer is first formed on the growth layer and the n-type ZnO layer having a relatively low growth temperature is then formed thereon instead of an n-type nitride layer, thereby providing excellent crystallinity and high brightness. A method of manufacturing the same is also disclosed. | 08-30-2012 |
20120217503 | METHOD OF MANUFACTURING GaN POWDER AND NITRIDE-BASED LIGHT EMITTING DEVICE USING GaN POWDER MANUFACTURED BY THE METHOD - Disclosed herein is a method of manufacturing GaN powders using a GaN etching product produced during manufacture of a GaN-based light emitting device. The method includes collecting a GaN etching product produced during etching of the GaN-based light emitting device, cleaning the collected GaN etching product; heating the cleaned GaN etching product to remove indium (In) components from the GaN etching product, and pulverizing the GaN etching product having the indium components removed therefrom into powders. A nitride-based light emitting device using the GaN powders is also disclosed. | 08-30-2012 |
20120217504 | NITRIDE BASED LIGHT EMITTING DEVICE USING SILICON SUBSTRATE AND METHOD OF MANUFACTURING THE SAME - Disclosed is a nitride-based light emitting device using a silicon substrate. The nitride-based light emitting device includes a silicon (Si) substrate, a seed layer for nitride growth formed on the silicon substrate, and a light emitting structure formed on the seed layer and having a plurality of nitride layers stacked therein. The seed layer for nitride growth is comprised of GaN powders, thereby minimizing occurrence of dislocations caused by a difference in lattice constant between a nitride layer and the silicon substrate. A method of manufacturing the same is also disclosed. | 08-30-2012 |
20120217536 | NITRIDE BASED LIGHT EMITTING DEVICE WITH EXCELLENT CRYSTALLINITY AND BRIGHTNESS AND METHOD OF MANUFACTURING THE SAME - Disclosed is a nitride-based light emitting device capable of improving crystallinity and brightness. The nitride-based light emitting device includes a growth substrate, a lattice buffer layer formed on the growth substrate, a p-type nitride layer formed on the lattice buffer layer, a light emitting active layer formed on the p-type nitride layer, and an n-type ZnO layer formed on the light emitting active layer. The lattice buffer layer is formed of powders of a material having a Wurtzite lattice structure. The lattice buffer layer is formed of ZnO powders, thereby minimizing generation of dislocations during nitride growth. A method of manufacturing the same is also disclosed. | 08-30-2012 |
20120217537 | NITRIDE BASED LIGHT EMITTING DEVICE USING PATTERNED LATTICE BUFFER LAYER AND METHOD OF MANUFACTURING THE SAME - Disclosed is a method of manufacturing a nitride-based light emitting device, in which a patterned lattice buffer layer is formed to minimize dislocation density upon growth of a nitride layer and an air gap is formed to enhance brightness of the light emitting device. The method includes depositing a material having a Wurtzite lattice structure on a substrate to form a deposition layer, forming an etching pattern on a surface of the deposition layer to form a patterned lattice buffer layer, and growing a nitride layer on the patterned lattice buffer layer. During the growth of the nitride layer, the patterned lattice buffer layer is removed to form an air gap at a portion of the nitride layer from which the patterned lattice buffer layer is removed. A nitride-based light emitting device manufactured thereby is also disclosed. | 08-30-2012 |
20120217538 | NITRIDE BASED LIGHT EMITTING DEVICE USING WURTZITE POWDER AND METHOD OF MANUFACTURING THE SAME - Disclosed is a nitride-based light emitting device using powders of a material having a Wurtzite lattice structure, such as ZnO powders. The nitride-based light emitting device includes a growth substrate, a lattice buffer layer formed on the growth substrate, and a light emitting structure formed on the lattice buffer layer and having a plurality of nitride layers stacked therein, wherein the lattice buffer layer is formed of powders of a material having a Wurtzite lattice structure. The lattice buffer layer is formed of ZnO powders, thereby minimizing occurrence of dislocations caused by a difference in lattice constant between a nitride layer and the growth substrate during growth of the nitride layer. A method of manufacturing the same is also disclosed. | 08-30-2012 |