Kun-Lung
Kun-Lung Chen, Taipei TW
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20080235635 | SYSTEM ON CHIP DEVELOPMENT WITH RECONFIGURABLE MULTI-PROJECT WAFER TECHNOLOGY - A method is disclosed for designing a semiconductor circuit on a multi-project wafer (MPW). One or more standard modules designed by one or more vendors with verified functions are first identified. Some of the standard modules are charged based on usage. At least one reconfigurable module of the MPW is programmed by making one or more connections through one or more connection layers. The standard modules are further connected with the programmed reconfigurable module according to the predetermined design of the circuit. The completed circuit is then verified for final uses. | 09-25-2008 |
20120139022 | 1T MIM MEMORY FOR EMBEDDED RAM APPLICATION IN SOC - Embedded memories. The devices include a substrate, a first dielectric layer, a second dielectric layer, a third dielectric layer, and a plurality of capacitors. The substrate comprises transistors. The first dielectric layer, embedding first and second conductive plugs electrically connecting the transistors therein, overlies the substrate. The second dielectric layer, comprising a plurality of capacitor openings exposing the first conductive plugs, overlies the first dielectric layer. The capacitors comprise a plurality of bottom plates, respectively disposed in the capacitor openings, electrically connecting the first conductive plugs, a plurality of capacitor dielectric layers respectively overlying the bottom plates, and a top plate, comprising a top plate opening, overlying the capacitor dielectric layers. The top plate opening exposes the second dielectric layer, and the top plate is shared by the capacitors. | 06-07-2012 |
Kun-Lung Chen, Hsinchu TW
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20130161702 | INTEGRATED MEMS DEVICE - An integrated MEMS device is provided, including, from bottom up, a bonding wafer layer, a bonding layer, an aluminum layer, a CMOS substrate layer defining a large back chamber area (LBCA), a small back chamber area (SBCA) and a sound damping path (SDP), a set of CMOS wells, a field oxide (FOX) layer, a set of CMOS transistor sources/drains, a first polysilicon layer forming CMOS transistor gates, a second polysilicon layer, said CMOS wells, said CMOS transistor sources/drains and said CMOS gates forming CMOS transistors, an oxide layer embedded with a plurality of metal layers interleaved with a plurality of via hole layers, and a gap control layer, an oxide layer, a first Nitride deposition layer, a metal deposition layer, a second Nitride deposition layer, an under bump metal (UBM) layer made of preferably Al/NiV/Cu and a plurality of solder spheres. | 06-27-2013 |
20130168740 | INTEGRATED COMPACT MEMS DEVICE WITH DEEP TRENCH CONTACTS - A compact MEMS motion sensor device is provided, including a CMOS substrate layer, with plural anchor posts having an isolation oxide layer surrounding a conductive layer. On one side of CMOS substrate layer, the device further includes a field oxide (FOX) layer, a first set and a second set of implant doped silicon areas, a first polysilicon layer, an oxide layer embedded with plural metal layers interleaved with via hole layers, a Nitride deposition layer, an under bump metal (UBM) layer and a plurality of solder spheres. On the other side of CMOS substrate layer, the present invention further includes a backside interconnect isolation oxide layer, a first MEMS bonding layer, a first metal compound layer, a second MEMS bonding layer, a MEMS layer, a first MEMS eutectic bonding layer, a second metal compound layer, a second MEMS eutectic bonding layer, and a MEMS cap layer. | 07-04-2013 |
Kun-Lung Chen, Hsinchu City TW
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20150060955 | INTEGRATED MEMS MICROPHONE WITH MECHANICAL ELECTRICAL ISOLATION - An integrated MEMS microphone is provided, including, a bonding wafer layer, a bonding layer, an aluminum layer, CMOS substrate layer, an N+ implant doped silicon layer, a field oxide (FOX) layer, a plurality of implant doped silicon areas forming CMOS wells, a two-tier polysilicon layer with selective ion implantation forming a diaphragm, a plurality of implant doped silicon areas forming CMOS source/drain, a gate poly layer forming CMOS transistor gates, said CMOS wells, said CMOS transistor sources/drains and said CMOS gates forming CMOS transistors, an oxide layer embedded with an interconnect contact layer, a plurality of metal layers interleaved with a plurality of via hole layers, a Nitride deposition layer, an under bump metal (UBM) layer and a plurality of solder spheres. Diaphragm is sandwiched between a small top chamber and a small back chamber, and substrate layer includes a large back chamber. | 03-05-2015 |
20150060956 | INTEGRATED MEMS PRESSURE SENSOR WITH MECHANICAL ELECTRICAL ISOLATION - An integrated MEMS pressure sensor is provided, including, a CMOS substrate layer, an N+ implant doped silicon layer, a field oxide (FOX) layer, a plurality of implant doped silicon areas forming CMOS wells, a two-tier polysilicon layer with selective ion implantation forming a membrane, including an implant doped polysilicon layer and a non-doped polysilicon layer, a second non-doped polysilicon layer, a plurality of implant doped silicon areas forming CMOS source/drain, a gate poly layer made of polysilicon forming CMOS transistor gates, said CMOS wells, CMOS transistor sources/drains and CMOS gates forming CMOS transistors, an oxide layer embedded with an interconnect contact layer, a plurality of metal layers interleaved with a plurality of via hole layers, a Nitride deposition layer, an under bump metal (UBM) layer and a plurality of solder spheres. N+ implant doped silicon layer and implant doped/un-doped composition polysilicon layer forming a sealed vacuum chamber. | 03-05-2015 |
Kun-Lung Huang, Taichung City TW
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20160086978 | DISPLAY - A display is disclosed. The display includes a display panel including pixel units in an image-displaying region. Each of the pixel units includes an AND gate and a pixel electrode electrically connected to an output terminal of the AND gate. | 03-24-2016 |
Kun-Lung Hung, New Taipei City TW
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20130021430 | METHOD APPLIED TO ENDPOINT OF VIDEO CONFERENCE SYSTEM AND ASSOCIATED ENDPOINT - Method applied to endpoint of video conference system and associated endpoint; in a receiving endpoint which receives video conference packets, while obtaining pictures from contents of video and data within the video conference packets, capturing the pictures as images on a user capture command or a result of automatic scene change detection. | 01-24-2013 |
Kun-Lung Tseng, Wu-Jih Hsiang TW
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20090272741 | PAINT CAN WITH AN INTERNAL MOLDED LABEL - The present invention provides an improved structure of a paint can with internal molded label. The paint can includes a plastic can body in a circular shape; a plastic bottom wall, integrally formed on the bottom of the plastic can body; and a plastic bottom frame, integrally formed on the bottom of the plastic can body and plastic bottom wall. There is a cover, covering the top of the plastic can body, and an internal molded label, integrated on the outside of the plastic can body through internal molding. The bottom edge of the internal molded label extends to the plastic bottom frame. In this way, an advancement of practicability is achieved in that the internal molded label of the paint can becomes smoother, and the quality of finished products is further improved. | 11-05-2009 |