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Kumashiro, JP

Hiroshi Kumashiro, Shizuoka-Shi JP

Patent application numberDescriptionPublished
20090162085Device for measuring electrostatic charge amount of toner and method for measuring distribution of electrostatic charge amount of toner - A device for measuring electrostatic charge amount of toner is provided. The device comprises a hollow toner suction port for sucking the toner from a toner substrate and a means for measuring electrostatic charge amount of the sucked toner. The toner suction port forms a hermetically sealed space with the toner substrate.06-25-2009
20090280424Toner for developing electrostatically charged image and process for producing the same - Provided as toners for developing electrostatically charged images capable of preventing a sticking and curling phenomenon even with an increase in number of printed sheets and processes for producing the same, with the use of a cyclic polyolefinic resin, are a toner for developing electrostatically charged images contains a cyclic polyolefinic resin and a polar resin wherein 10 to 50 parts by weight of the polar resin is present in relation to 100 parts by weight of the cyclic polyolefinic resin, and a process for producing a toner for developing electrostatically charged images comprises a step of melt-kneading at least a cyclic polyolefinic resin and a coloring agent to obtain a kneaded product, a step of grinding the kneaded product to obtain colored particles, and a step of melt-kneading, grinding and classifying the colored particles and a polar resin to obtain the toner.11-12-2009

Kenichi Kumashiro, Osaka JP

Patent application numberDescriptionPublished
20100272551POWDER/GRANULAR MATERIAL FEEDER - A powder/granular material feeder is provided which can prevent bridges and rat holes, which makes a hopper less likely to vibrate, and which can be easily cleaned.10-28-2010

Masahiko Kumashiro, Osaka JP

Patent application numberDescriptionPublished
20080250382SEMICONDUCTOR DEVICE MANUFACTURING METHOD - A yielding percentage is calculated based on a first relationship, a probability distribution and a second relationship. The first relationship is a relationship between measurement values of a transfer pattern formed on a semiconductor substrate provided in the semiconductor device in the semiconductor lithographic process and number of sections on the semiconductor substrate where the measurement values are set. The probability distribution is a probability distribution showing variation of manufacturing parameters in the semiconductor lithographic process. The second relationship is a relationship between the manufacturing parameters and the measurement values.10-09-2008

Masayuki Kumashiro, Kanagawa JP

Patent application numberDescriptionPublished
20120322169METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE - A focus through a projection lens is corrected to prevent the occurrence of a dimensional error in a pattern due to defocusing. At least one automatic focus correction mark is formed over each of chip patterns formed in a reticle used for exposure. Using one of the automatic focus correction marks located in the center portion of an actual device region, automatic correction of the focus of exposure light is performed. In this manner, a variation in the focus of the exposure light through the center portion of the projection lens, which is more likely to reach a high temperature than an end portion of the projection lens, is detected and corrected.12-20-2012

Sumio Kumashiro, Kyoto JP

Patent application numberDescriptionPublished
20130026359METHOD AND APPARATUS FOR GENERATING AND ANALYZING IONS - The current invention involves a method and a device for generating and analyzing ions in order to analyze samples directly without sample preparation. The gaseous neutral molecules are desorbed under atmospheric pressure by a desorption method. The desorbed neutral molecules are then transferred into a low pressure region where they are post-ionized by a mist from an electrospray probe tip or by photons from a vacuum UV source. The generated ions are then focused in a time varying electric field in the low pressure chamber before they are transferred into a mass spectrometer or ion mobility spectrometer for further analysis.01-31-2013

Sumio Kumashiro, Kyoto-Shi JP

Patent application numberDescriptionPublished
20100193682MULTI-REFLECTING ION OPTICAL DEVICE - A multi-reflecting ion optical device includes electrostatic field generating means configured to generate electrostatic field defined by a superposition of first and second distributions of electrostatic potential φ08-05-2010

Yasushi Kumashiro, Tsukuba-Shi JP

Patent application numberDescriptionPublished
20120125659COPPER CONDUCTOR FILM AND MANUFACTURING METHOD THEREOF, CONDUCTIVE SUBSTRATE AND MANUFACTURING METHOD THEREOF, COPPER CONDUCTOR WIRING AND MANUFACTURING METHOD THEREOF, AND TREATMENT SOLUTION - Provided are a copper conductor film and manufacturing method thereof, and patterned copper conductor wiring, which have superior conductivity and wiring pattern formation, and with which there is no decrease in insulation between circuits, even at narrow wiring widths and narrow inter-wiring spacing. Disclosed are a copper conductor film and manufacturing method thereof in which a copper-based particle-containing layer, which contains both a metal having catalytic activity toward a reducing agent and copper oxide, is treated using a treatment solution that contains a reagent that ionizes or complexes copper oxide and a reducing agent that reduces copper ions or copper complex to form metallic copper in a single solution, and patterned copper conductor wiring that is obtained by patterning a copper-based particle-containing layer using printing and by said patterned particle-containing layer being treated by a treatment method using a solution that contains both a reagent that ionizes or complexes copper oxide and a reducing agent that reduces copper ions or copper complexes to form metallic copper in a single solution.05-24-2012

Yasushi Kumashiro, Chikusei JP

Patent application numberDescriptionPublished
20090134386Organic Field Effect Transistor - An organic field-effect transistor has a gate insulating layer comprising a cured epoxy resin. The epoxy resin has a lower concentration of trapping centres compared with a conventional epoxy resin in which trapping centres are provided by hydroxyl (OH) groups. The lower concentration of trapping centres can be achieved by reducing the number of hydroxyl groups throughout the layer and/or by reducing the number of hydroxyl groups in a surface region.05-28-2009

Yasushi Kumashiro, Ibaraki JP

Patent application numberDescriptionPublished
20100233011METHOD FOR FORMING A COPPER WIRING PATTERN, AND COPPER OXIDE PARTICLE DISPERSED SLURRY USED THEREIN - There are provided are a method wherein a surface treating agent, which is essential for making copper particles antioxidative and dispersing the copper particles in the prior art, is hardly used but copper particles, which cause little electromigration and are small in the price rate of material itself, are used to form a low-resistance copper wiring pattern while the generation of cracks therein is restrained; and a copper oxide particle dispersed slurry used therein.09-16-2010
20100328599Ink for Forming Liquid Crystal Spacer and Liquid Crystal Display Device Using Such Ink - The object of the invention is to provide a liquid crystal spacer-forming ink that can sufficiently reduce the dot diameter of liquid crystal spacers formed by ink jet printing, and specifically it provides a liquid crystal spacer-forming ink with a surface tension of at least 28 mN/m at 25° C. and a viscosity of no greater than 50 mPa·s at 25° C.12-30-2010
20110141428PROCESS FOR PRODUCING SPACER FOR LIQUID CRYSTAL DISPLAY APPARATUS, INK FOR SPACER FORMATION, LIQUID CRYSTAL DISPLAY APPARTUS AND PROCESS FOR MANUFACTURING THE SAME - A process for producing a spacer for a liquid crystal display apparatus whereby an ink-jet method is used to print droplets composed of an ink that contains a resin and a solvent that dissolves it but that contains essentially no solid particles on a substrate 06-16-2011

Yasushi Kumashiro, Chikusei-Shi JP

Patent application numberDescriptionPublished
20120170241PRINTING INK, METAL NANOPARTICLES USED IN THE SAME, WIRING, CIRCUIT BOARD, AND SEMICONDUCTOR PACKAGE - Disclosed is a printing ink comprising Cu- and/or CuO-containing metal nanoparticles, which obtains excellent dispersion properties and successive dispersion stability without using additives such as dispersing agents. Specifically disclosed is a printing ink that comprises Cu- and/or CuO-containing metal nanoparticles and has no more than 2,600 ppm of ionic impurities in the total solid content. The printing ink is obtained by dispersing the Cu- and/or CuO-containing metal nanoparticles, which have no more than 2,600 ppm of ionic impurities in the total solid content, in a dispersion medium.07-05-2012
20120175147COPPER METAL FILM, METHOD FOR PRODUCING SAME, COPPER METAL PATTERN, CONDUCTIVE WIRING LINE USING THE COPPER METAL PATTERN, COPPER METAL BUMP, HEAT CONDUCTION PATH, BONDING MATERIAL, AND LIQUID COMPOSITION - Disclosed are: a copper metal film which has good adhesion to a substrate, low volume resistivity, and good deep-part metal properties; and a method for producing a copper metal film, wherein the copper metal film can be produced by reducing a substrate to a deep part thereof without damaging the substrate. Specifically disclosed is a copper metal film obtained by treating a copper-based particle deposition layer containing both copper oxides and a metallic transition metal or alloy, or a transition metal complex containing a metal element, with gaseous formic acid and/or formaldehyde heated to 120° C. or higher. The copper oxide is preferably copper (I) oxide and/or copper (II) oxide. The transition metal, alloy or metal complex are preferably a metal selected from the group consisting of Cu, Pd, Pt, Ni, Ag, Au and Rh, an alloy containing the metal, or a complex containing the metal element, respectively.07-12-2012

Yoshiaki Kumashiro, Kasama JP

Patent application numberDescriptionPublished
20110033754NONAQUEOUS LITHIUM SECONDARY BATTERY - A nonaqueous lithium secondary battery includes a positive electrode and a negative electrode capable of intercalating and releasing lithium ions and a separator. The negative electrode includes a collector and a negative electrode mixture layer formed on the collector. The negative electrode mixture layer includes at least a negative electrode active material and a binder. Nonconductive particles are buried in a top layer of the negative electrode mixture layer. The nonconductive particles and the negative electrode active material exist as a mixture in the top layer with a depth ranging from 1 to 20 μm. A volume ratio of nonconductive particles having a diameter equal to or less than 20 μm to a total volume of all the nonconductive particles and the negative electrode active material existing in the top layer of the negative electrode mixture layer ranges from 20 to 80%.02-10-2011

Yoshiaki Kumashiro, Mito JP

Patent application numberDescriptionPublished
20090263721LITHIUM SECONDARY BATTERY AND PRODUCTION METHOD OF THE SAME - To provide a lithium secondary battery which suppresses a decrease in the charge and discharge efficiency during a battery storage test and which is excellent in maintaining the battery capacity after the storage test. There are disclosed a nonaqueous lithium battery, comprising: a positive electrode active material comprising a lithium-containing oxide capable of inserting and detaching lithium ions; a negative electrode active material comprising a carbon material capable of inserting and detaching lithium ions; and an electrolytic solution containing a lithium ion, wherein the surface of the negative electrode active material after initializing charging is coated with a compound derived from vinylene carbonate, and wherein a weight power density of the lithium battery is no less than 100 Wh/kg, and a method of producing a nonaqueous lithium battery comprising a step of sealing a positive electrode active material, a negative electrode active material, and a nonaqueous electrolytic solution using a sealed container, wherein a predetermined amount of vinylene carbonate is added into the nonaqueous electrolytic solution, and the initializing charging is carried out to form a coating on the surface of the negative electrode active material, the coating being derived from the vinylene carbonate.10-22-2009
20100072949Charging/Discharging Control Unit for Lithium Secondary Battery - In a charging/discharging unit provided with: a lithium secondary battery, a voltage detecting sensor for detecting a voltage and a current detecting sensor; the charging/discharging control unit is further provided with a controller, and a discharging element for performing a constant voltage discharging operation of 3 V. A voltage, V03-25-2010

Patent applications by Yoshiaki Kumashiro, Mito JP

Yoshiaki Kumashiro, Kasama-Shi JP

Patent application numberDescriptionPublished
20120226455Anomalously Charged State Detection Device and Test Method for Lithium Secondary Cell - A lithium secondary cell has a positive electrode, a negative electrode, and an electrolyte including lithium ions. An anomalously charged state detection device includes: a voltage detection unit; a current detection unit; a calculation unit that calculates the electricity amount Q charged into or discharged from the lithium secondary cell and a differential value dV/dQ for each predetermined time period t, and that obtains a Q-dV/dQ curve; a measured data storage unit that stores the Q-dV/dQ curve; a cell data storage unit that stores a Q-dV/dQ curve during normal conditions; and a control unit that decides that the lithium secondary cell is in an anomalously charged state if, in the Q-dV/dQ curve stored by the measured data storage unit, a peak is present that is different from a peak that appears in the Q-dV/dQ curve during normal conditions.09-06-2012

Yoshifumi Kumashiro, Osaka JP

Patent application numberDescriptionPublished
20120287541SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE - An electrode pad is provided above a circuit block of a semiconductor integrated circuit device. A junction point A and a junction point B are provided on connection lines connecting electrode pads to an internal circuit and an electrostatic discharge (ESD) protection circuit. The junction point A and the junction point B are positioned at locations closer to the ESD protection circuit than to the electrode pads.11-15-2012