| Patent application number | Description | Published |
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| 20090090907 | Electrochemical device - An electrochemical device is provided, comprising a source contact connected to a first antenna pad, a drain contact connected to a second antenna pad, at least one gate electrode, an electrochemically active element arranged between, and in direct electrical contact with, the source and drain contacts, which electrochemically active element comprises a transistor channel and is of a material comprising an organic material having the ability of electrochemically altering its conductivity through change of redox state thereof, and a solidified electrolyte in direct electrical contact with the electrochemically active element and the at least one gate electrode and interposed between them in such a way that electron flow between the electrochemically active element and the gate electrode(s) is prevented. In the device, flow of electrons between source contact and drain contact is controllable by means of a voltage applied to the gate electrode(s). | 04-09-2009 |
| 20100230731 | Circuitry and method - An electrochemical transistor device is provided, comprising a source contact, a drain contact, at least one gate electrode, an electrochemically active element arranged between, and in direct electrical contact with, the source and drain contacts, which electrochemically active element comprises a transistor channel and is of a material comprising an organic material having the ability of electrochemically altering its conductivity through change of redox state thereof, and a solidified electrolyte in direct electrical contact with the electrochemically active element and said at least one gate electrode and interposed between them in such a way that electron flow between the electrochemically active element and said gate electrode(s) is prevented. In the device, flow of electrons between source contact and drain contact is controllable by means of a voltage applied to said gate electrode(s). | 09-16-2010 |
| Patent application number | Description | Published |
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| 20090039343 | Transistor - An electrolyte-gated field effect transistor is disclosed, the transistor comprising an electrolyte including a polymeric ionic liquid analogue. In a preferred embodiment, the transistor further comprises a source electrode, a drain electrode disposed so as to be separated from the source electrode, forming a gap between the source and drain electrodes, a semiconductor layer bridging the gap between the source and drain electrodes and thus forming a transistor channel, and a gate electrode positioned so as to be separated from the source electrode, the drain electrode and the semiconductor layer. In this embodiment, the electrolyte is disposed so as to contact at least a part of both the gate electrode and the semiconductor layer. | 02-12-2009 |
| 20090040587 | Electrochemical thin-film transistor - An electrochemical transistor comprising an electrolyte is disclosed. The electrolyte includes an ionic liquid. In a preferred embodiment, the transistor further comprises a source electrode, a drain electrode separated from the source electrode so as to form a gap between the source and drain electrodes, a semiconductor layer bridging the gap between the source and drain electrodes to form a transistor channel, and a gate electrode separated from the source electrode, the drain electrode and the semiconductor layer. In this embodiment, the electrolyte is disposed so as to contact at least a part of both the semiconductor layer and the gate electrode. | 02-12-2009 |
| 20090042346 | Electrolyte pattern and method for manufacturing an electrolyte pattern - A method for manufacturing a gel electrolyte pattern is disclosed, the method comprising depositing an electrolyte precursor by inkjet printing onto a gelling agent layer. A gel electrolyte pattern is also disclosed, the gel electrolyte pattern comprising either a mixture of a gelling agent and an electrolyte precursor or the products of a chemical reaction between a gelling agent and an electrolyte precursor. | 02-12-2009 |
