Patent application number | Description | Published |
20120108040 | VAPORIZING POLYMER SPRAY DEPOSITION SYSTEM - A vaporizing spray deposition device for forming a thin film includes a processing chamber, a fluid line, and a spray head coupled to the fluid line proximate the processing chamber. The fluid line is configured to transfer a polymer fluid and solvent mixture to the spray head. The spray head is configured to receive the polymer fluid and solvent mixture and to atomize the polymer fluid and solvent mixture to emit it in a substantially vaporized form to be deposited on a surface and thereby forming a thin film of the polymer on the surface after evaporation of the solvent. In an embodiment, the vaporizing spray deposition device may include a heating device to perform a hard bake process on the polymer. In an embodiment, the vaporizing spray deposition device may be configured to provide a post deposition solvent spray trim process to the thin film polymer. | 05-03-2012 |
20130187237 | STRUCTURE AND METHOD FOR TRANSISTOR WITH LINE END EXTENSION - The present disclosure provides a semiconductor structure. The semiconductor structure includes a semiconductor substrate; an isolation feature formed in the semiconductor substrate; a first active region and a second active region formed in the semiconductor substrate, wherein the first and second active regions extend in a first direction and are separated from each other by the isolation feature; and a dummy gate disposed on the isolation feature, wherein the dummy gate extends in the first direction to the first active region from one side and to the second active region from another side. | 07-25-2013 |
20130210232 | CUT-MASK PATTERNING PROCESS FOR FIN-LIKE FIELD EFFECT TRANSISTOR (FINFET) DEVICE - A method for patterning a plurality of features in a non-rectangular pattern, such as on an integrated circuit device, includes providing a substrate including a surface with a plurality of elongated protrusions, the elongated protrusions extending in a first direction. A first layer is formed above the surface and above the plurality of elongated protrusions, and patterned with an end cutting mask. The end cutting mask includes two nearly-adjacent patterns with a sub-resolution feature positioned and configured such that when the resulting pattern on the first layer includes the two nearly adjacent patterns and a connection there between. The method further includes cutting ends of the elongated protrusions using the pattern on the first layer. | 08-15-2013 |
20130244434 | METHOD OF FABRICATING A SEMICONDUCTOR DEVICE - The present disclosure provides a method of fabricating a semiconductor device. The method includes forming a plurality of circuit devices over a substrate. The method includes forming an organic layer over the substrate. The organic layer is formed over the plurality of circuit devices. The method includes polishing the organic layer to planarize a surface of the organic layer. The organic layer is free of being thermally treated prior to the polishing. The organic material is un-cross-linked during the polishing. The method includes depositing a LT-film over the planarized surface of the organic layer. The depositing is performed at a temperature less than about 150 degrees Celsius. The depositing is also performed without using a spin coating process. The method includes forming a patterned photoresist layer over the LT-film. | 09-19-2013 |
20140264760 | Layout Optimization of a Main Pattern and a Cut Pattern - A method for feature pattern modification includes extracting both a main pattern and a cut pattern from a design pattern, the main pattern being laid out under a set of process guidelines that improve the process window during formation of the main pattern, and modifying at least one of: the main pattern and the cut pattern if either feature pattern is in violation of a layout rule. | 09-18-2014 |
20150072527 | METHOD FOR PATTERNING A PLURALITY OF FEATURES FOR FIN-LIKE FIELD-EFFECT TRANSISTOR (FINFET) DEVICES - Methods for patterning fins for fin-like field-effect transistor (FinFET) devices are disclosed. An exemplary method includes providing a semiconductor substrate, forming a plurality of elongated protrusions on the semiconductor substrate, the elongated protrusions extending in a first direction, and forming a mask covering a first portion of the elongated protrusions, the mask being formed of a first material having a first etch rate. The method also includes forming a spacer surrounding the mask, the spacer being formed of a second material with an etch rate lower than the etch rate of the first material, the mask and the spacer together covering a second portion of the elongated protrusions larger than the first portion of the elongated protrusions. Further, the method includes removing a remaining portion of the plurality of elongated protrusions not covered by the mask and spacer. | 03-12-2015 |
20150161321 | POLYGON-BASED OPTICAL PROXIMITY CORRECTION - Methods and systems for design of integrated circuits including performing OPC are discussed. In one embodiment, design data having a geometric feature is provided. A base feature is formed from the geometric feature, which has a substantially linear edge. A pseudo dissection point is determined on the base feature. Add or trim a polygon from the base feature to form a modified feature. An OPC process is performed on the modified feature to generate an output design. The output design is used to fabricate a semiconductor device on a semiconductor substrate. | 06-11-2015 |
20150187564 | METHOD OF USING A VAPORIZING SPRAY SYSTEM TO PERFORM A TRIMMING PROCESS - A method of semiconductor device fabrication including placing a substrate having a first and second features disposed thereon in a vaporizing spray deposition system. An atomizing spray head of the vaporizing spray deposition system is used to deposit a conformal polymer layer on the first and second features. The first feature having the layer of the polymer disposed thereon and having a first width. A spray trim process is performed on the first and second features having the polymer layer disposed thereon using the atomizing spray head. | 07-02-2015 |