Patent application number | Description | Published |
20100075154 | POLYMERIZABLE COMPOSITION FOR OPTICAL MATERIAL, OPTICAL MATERIAL, AND METHOD FOR PREPARING THE OPTICAL MATERIAL - The polymerizable composition for an optical material of the present invention comprises a phenylene diisocyanate, at least one polythiol compound selected from the group consisting of 4-mercaptomethyl-1,8-dimercapto-3,6-dithiaoctane, 4,8-, 4,7- or 5,7-dimercaptomethyl-1,11-dimercapto-3,6,9-trithiaundecane, 2,5-bis(mercaptomethyl)-1,4-dithiane, bis(mercaptoethyl)sulfide, 1,1,3,3-tetrakis(mercaptomethylthio)propane, 4,6-bis(mercaptomethylthio)-1,3-dithiane, 2-(2,2-bis(mercaptomethylthio)ethyl)-1,3-dithietane, 1,1,2,2-tetrakis(mercaptomethylthio)ethane 3-mercaptomethyl-1,5-dimercapto-2,4-dithiapentane and tris(mercaptomethylthio)methane. | 03-25-2010 |
20120309909 | METHODS FOR PRODUCING POLYASPARTIC ACID PRECURSOR POLYMER AND POLYASPARTIC ACID SALT - Disclosed are a method for producing a polyaspartic acid precursor polymer by polymerization using at least one kind selected from a product obtained from maleic anhydride and ammonia and, maleamic acid as a monomer, wherein at least part of carboxyl groups in the monomers are a tertiary amine salt; and an industrially inexpensive and simple method for producing a polyaspartic acid salt by treating the polyaspartic acid precursor polymer obtained by this method with a basic aqueous solution. | 12-06-2012 |
20130018169 | Metal Thietane Compound, Polymerizable Composition Containing the Compound, Resin and Use of the Resin - Polymerizable compositions containing at least one metal thietane compound represented by general formulas (110), (201) or (120), respectively, wherein said formulas are as follows: | 01-17-2013 |
Patent application number | Description | Published |
20080211938 | Red eye image correction device, electronic camera and red eye image correction program product - A red eye image correction device includes: a data size conversion unit that executes reduction processing on an image so as to retain color component information contained in the image and generates a sub image with a smaller data size than the image; a red eye detection unit that detects data corresponding to red eye portions in data constituting the sub image; a position information calculation unit that obtains through calculation second position information indicating positions of data corresponding to the red eye portions in data constituting the image by using first position information indicating positions of the detected data in the sub image data; and a red eye correction unit that executes red eye correction processing on the data of the image indicated by the second position information. | 09-04-2008 |
20110128389 | ELECTRONIC CAMERA AND SERVER DEVICE - An electronic camera, which captures an image and transmits the image via wireless network to a server, comprises a transmitting person information registration means that registers transmitting person information entered by a user, and a transmission inhibit means that inhibits image transmission to the server if transmitting person information is not registered by the transmitting person information registration means. | 06-02-2011 |
20130234826 | ELECTRONIC DEVICE AND ELECTRONIC DEVICE CONTROL PROGRAM - There has been a desire for proactively adding more detailed embodiments relating to the acquisition and use of biometric information. Therefore, according to a first aspect of the present invention, for example, provided is an electronic device including an input section that inputs biometric information, which is information relating to a living body of a user; and an output section that outputs a limit signal limiting contact with the user to a bidirectional communication device, based on the biometric information. | 09-12-2013 |
20140325004 | ELECTRONIC CAMERA AND SERVER DEVICE - A server device that includes a receiving unit, a browse page creation unit, a mail creation unit, and a mail transmission unit. The receiving unit receives an image transmitted from an electronic camera via a wireless network. The browse page creation unit creates a browse page for browsing the transmitted image from the electronic camera, the image having been received by the receiving unit. The mail creation unit creates a notification mail for introducing the browse page that has been created by the browse page creation unit to a person other than a user of the electronic camera. Furthermore, the mail transmission unit transmits the notification mail that has been created by the mail creation unit to a specified mail address. | 10-30-2014 |
Patent application number | Description | Published |
20120154816 | Imaging apparatus, electronic apparatus, photovoltaic cell, and method of manufacturing imaging apparatus - An imaging apparatus includes: an imaging unit in which a plurality of pixels receiving incidence light on a light receiving face are disposed in an imaging region of a substrate, wherein the pixel includes a thermocouple device group in which a plurality of thermocouples are aligned along the light receiving face, wherein, in the thermocouple device group, the plurality of thermocouples are arranged so as to be separated from each other such that the light receiving face has a grating structure, and wherein the thermocouple device group is disposed such that the incidence light is incident to the grating structure so as to cause plasmon resonance to occur on the light receiving face, and an electromotive force is generated due to a change in the temperature of a portion of the thermocouple device group, at which the plasmon resonance occurs, in each of the plurality of thermocouples. | 06-21-2012 |
20120158379 | SIMULATOR, PROCESSING SYSTEM, DAMAGE EVALUATION METHOD AND DAMAGE EVALUATION PROGRAM - Disclosed herein is a simulator including: an input section adapted to acquire processing conditions for a given process performed on a workpiece; and a damage calculation section adapted to acquire the damage of the workpiece, based on the processing conditions, by calculating, using a Flux method, the relationship between the amount of a first substance externally injected onto a given evaluation point on the workpiece during the given process and the amount of a second substance released from the given evaluation point on the workpiece as a result of the injection of the first substance. | 06-21-2012 |
20120211850 | IMAGING ELEMENT, METHOD FOR MANUFACTURING IMAGING ELEMENT, PIXEL DESIGN METHOD, AND ELECTRONIC APPARATUS - An imaging element includes a plurality of pixels that are two-dimensionally arranged and each have a light receiving part including a photoelectric conversion element and a light collecting part that collects incident light toward the light receiving part. Each of the light collecting parts in the plurality of pixels includes an optical functional layer having, in a surface, a specific projection and depression structure depending on the pixel position. | 08-23-2012 |
20130017672 | PLASMA TREATMENT METHOD, PLASMA TREATMENT APPARATUS, AND SEMICONDUCTOR DEVICE MANUFACTURING METHODAANM Kuboi; NobuyukiAACI KanagawaAACO JPAAGP Kuboi; Nobuyuki Kanagawa JPAANM Fukusawa; MasanagaAACI TokyoAACO JPAAGP Fukusawa; Masanaga Tokyo JP - A plasma treatment method includes: creating a plasma from a mixed gas containing carbon and nitrogen to generate CN active species, and treating a surface of a semiconductor substrate with the CN active species. | 01-17-2013 |
20130133832 | SIMULATION METHOD, SIMULATION PROGRAM, AND SEMICONDUCTOR MANUFACTURING APPARATUS - The simulation method is for predicting a damage amount due to ultraviolet rays in manufacturing a semiconductor device. The method includes: calculating particle density by performing simulation based on a differential equation for the particle density; calculating emission intensity at each wavelength in a visible wavelength region based on the calculated particle density; obtaining an electron energy distribution function by comparing the calculated emission intensity at each wavelength in the visible wavelength region with an actually detected emission spectrum in the visible wavelength region with reference to information on emission species and an emission wavelength in a target manufacturing process; predicting an emission spectrum in an ultraviolet wavelength region by using the electron energy distribution function and a reaction cross-sectional area relating to the emission species; and predicting a damage amount due to the ultraviolet rays based on the predicted emission spectrum in the ultraviolet wavelength region. | 05-30-2013 |
20130342722 | SOLID-STATE IMAGING DEVICE, MANUFACTURING METHOD THEREOF, AND ELECTRONIC APPARATUS - A solid-state imaging device includes: pixels each including a hybrid photoelectric conversion portion and pixel transistors, wherein the hybrid photoelectric conversion portion includes a semiconductor layer having a p-n junction, a plurality of columnar or cylindrical hollow-shaped organic material layers disposed in the semiconductor layer, and a pair of electrodes disposed above and below the semiconductor layer and the organic material layers, wherein charges generated in the organic material layers through photoelectric conversion move inside the semiconductor layer so as to be guided to a charge accumulation region, and wherein the solid-state imaging device is configured as a back-illuminated type in which light is incident from a surface opposite to the surface on which the pixel transistors are formed. | 12-26-2013 |
20140005990 | SIMULATION METHOD, SIMULATION PROGRAM, PROCESSING UNIT, AND SIMULATOR | 01-02-2014 |
20140129203 | SIMULATION METHOD, SIMULATION PROGRAM, SIMULATOR PROCESSING EQUIPMENT, AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE - A simulation method to cause an information processing device to calculate, including: reversely tracing a first flux incident on any position on a surface of a workpiece subject to processing treatment from the position; when the first flux strikes another position on the workpiece surface as a result of the reverse tracing of the first flux, calculating a second flux to be the first flux by scattering at the another position and reversely tracing the second flux from the another position; and, by repeating calculation and reverse tracing of flux, when the reversely traced flux no longer strikes the workpiece surface, carrying out comparison of the flux with an angular distribution of a flux incident on the workpiece, and when the current flux is within the angular distribution, obtaining an amount of flux having contributed to the scattering for a flux group from the first flux to the current flux. | 05-08-2014 |
20140285627 | SOLID-STATE IMAGE PICKUP DEVICE, METHOD OF DRIVING SOLID-STATE IMAGE PICKUP DEVICE, AND ELECTRONIC APPARATUS - Provided is a solid-state image pickup device that includes: a plurality of pixels each including a photoelectric conversion element; and a transmittance control element provided on a light incident side of the photoelectric conversion element of at least a part of the plurality of pixels, and configured to change a transmittance of incident light by an external input. | 09-25-2014 |
20140367554 | IMAGING ELEMENT, METHOD FOR MANUFACTURING IMAGING ELEMENT, PIXEL DESIGN METHOD, AND ELECTRONIC APPARATUS - An imaging element includes a plurality of pixels that are two-dimensionally arranged and each have a light receiving part including a photoelectric conversion element and a light collecting part that collects incident light toward the light receiving part. Each of the light collecting parts in the plurality of pixels includes an optical functional layer having, in a surface, a specific projection and depression structure depending on the pixel position. | 12-18-2014 |
20150149131 | SIMULATION METHOD, SIMULATION PROGRAM, PROCESSING APPARATUS, SIMULATOR, AND DESIGN METHOD - A simulation method includes acquiring a processing condition for performing predetermined processing on a processing target with use of plasma, calculating a solid angle corresponding to a field-of-view region through which plasma space is viewable from a predetermined evaluation point in the predetermined evaluation point on a surface of the processing target based on the processing condition, and calculating an incident radical amount entering the evaluation point by a flux method with use of a function which takes a reaction probability between the solid angle and the evaluation point of a radical entering the evaluation point as an argument. | 05-28-2015 |
20150149970 | SIMULATION METHOD, SIMULATION PROGRAM, PROCESS CONTROL SYSTEM, SIMULATOR, PROCESS DESIGN METHOD, AND MASK DESIGN METHOD - A simulation method includes acquiring processing conditions for performing an etching process using plasma on a surface of a wafer covered by a mask having a predetermined mask thickness and aperture ratio, calculating, based on the conditions, a flux amount of a reaction product that enters the surface, calculating, based on mask information including the thickness and the aperture ratio and the flux amount, an etching rate of the wafer, calculating, based on the conditions and the etching rate, a dissociation fraction of the product, calculating, based on the information and the etching rate, a solid angle at a predetermined evaluation point set on the surface, the solid angle corresponding to a view area in which plasma space can be seen from the evaluation point, and calculating, based on the etching rate, the dissociation fraction, the solid angle, and the aperture ratio, a control index for evaluating a surface shape. | 05-28-2015 |
20150155327 | SOLID-STATE IMAGING ELEMENT, MANUFACTURING METHOD, AND ELECTRONIC DEVICE - A solid-state imaging element includes a semiconductor substrate where a plurality of photodiodes are arranged in a plane, and a separation section which separates the photodiodes, in which the separation section has a photoelectric conversion section formed by filling a material which has a high light absorption coefficient and a high quantum efficiency in trenches which are formed in the semiconductor substrate. | 06-04-2015 |
Patent application number | Description | Published |
20090162950 | DRY ETCHING EQUIPMENT AND METHOD FOR PRODUCING SEMICONDUCTOR DEVICE - A dry etching equipment includes a topography simulator and a control section. The topography simulator controls an amount of deposition species incident upon a sidewall to be processed in accordance with a wafer opening ratio and a solid angle of a local pattern, the deposition amount being represented by a product of a reaction product flux and the solid angle. The control section compares a database obtained by the topography simulator with an actual measured value detected from an etching condition during dry etching to calculate a correction value for etching process, and indicates the correction value to an etching chamber in the dry etching equipment. The dry etching equipment corrects in real time a parameter for the etching process conducted in the etching chamber. | 06-25-2009 |
20100243431 | Ion radiation damage prediction method, ion radiation damage simulator, ion radiation apparatus and ion radiation method - An ion radiation damage prediction method includes a parameter computation step of computing the collision position and the incidence angle of an incident ion hitting a fabricated object by considering a transport path of the ion and by adopting the Monte Carlo method which takes distributions of flux quantities, incidence energies and angles of incident ions as input parameters; and a defect-distribution computation step of searching for data by referring to information found at the parameter computation step and databases created in advance, the databases storing distributions of quantities of crystalline defects having an effect on the fabricated object, ion reflection probabilities and ion penetration depths, finding the penetration depth and location of the incident ion based on the data found in the search operation, and the incidence energy and angle of the incident ion, and computing a distribution of defects in the fabricated object from the penetration depth and location. | 09-30-2010 |
20110082577 | SHAPE SIMULATION APPARATUS, SHAPE SIMULATION PROGRAM, SEMICONDUCTOR PRODUCTION APPARATUS, AND SEMICONDUCTOR DEVICE PRODUCTION METHOD - Disclosed herein is a shape simulation apparatus including: a flux computation block configured to compute the flux of particles incident on the surface of a wafer covered with a mask; and a shape computation block configured to compute a surface shape of the wafer by allowing the coordinates of a plurality of calculation points established on the surface of the wafer to be time-evolved based on the incident flux computed. | 04-07-2011 |
20110160889 | SEMICONDUCTOR MANUFACTURING DEVICE, SEMICONDUCTOR DEVICE MANUFACTURING METHOD, SIMULATION DEVICE, AND SIMULATION PROGRAM - Disclosed herein is a semiconductor manufacturing device including, a chamber, a sensor, a sticking probability calculating section, an acting section, and a control section. | 06-30-2011 |
20130337584 | SHAPE SIMULATION APPARATUS, SHAPE SIMULATION PROGRAM, SEMICONDUCTOR PRODUCTION APPARATUS, AND SEMICONDUCTOR DEVICE PRODUCTION METHOD - Disclosed herein is a shape simulation apparatus including: a flux computation block configured to compute the flux of particles incident on the surface of a wafer covered with a mask; and a shape computation block configured to compute a surface shape of the wafer by allowing the coordinates of a plurality of calculation points established on the surface of the wafer to be time-evolved based on the incident flux computed. | 12-19-2013 |
20130344339 | ION RADIATION DAMAGE PREDICTION METHOD, ION RADIATION DAMAGE SIMULATOR, ION RADIATION APPARATUS AND ION RADIATION METHOD - An ion radiation damage prediction method includes a parameter computation step of computing the incidence energy and incidence angle of an incident ion hitting a fabricated object, and a step of searching for data in databases created in advance on the basis of the computed incidence energy and angle, the databases storing distributions of quantities of crystalline defects having an effect on the fabricated object, ion reflection probabilities and ion penetration depths. The method also includes finding the penetration depth and location of the incident ion based on the data found in the searching step and based on the computed incidence energy and angle, and computing a quantity of defects in the fabricated object from the penetration depth and location. A distribution of defects may be computed by performing the aforementioned steps for many incident ions. | 12-26-2013 |