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| 20090084415 | CLEANING/DRYING APPARATUS AND CLEANING/DRYING METHOD - A cleaning/drying apparatus including a vapor area where vapor of an organic solvent inside the cleaning/drying apparatus is generated, an ejecting part configured to eject the organic solvent onto a cleaning/drying target, a first detecting part configured to determine whether the temperature of the cleaning/drying target is a first temperature equivalent to a temperature of the vapor in the vapor area, a second detecting part configured to determine whether the temperature of the cleaning/drying target is a second temperature enabling the organic solvent to condense on a surface of the cleaning/drying target, and a cleaning/drying control part configured to drive the ejecting part to eject the organic solvent when the first detecting part detects that the temperature of the cleaning/drying target is the first temperature and stop the ejection when the second detecting part detects that the temperature of the cleaning/drying target is the second temperature. | 04-02-2009 |
| 20090126762 | CLEANING AND DRYING APPARATUS AND A CLEANING AND DRYING METHOD - A cleaning and drying apparatus includes a cleaning and drying tank where an organic solvent is stored, a resupplying part configured to resupply the organic solvent in the cleaning and drying tank when a storage amount of the organic solvent in the cleaning and drying tank is equal to or less than a designated value, and a installing and uninstalling apparatus configured to install and uninstall a cleaning and drying subject in a vapor area where vapor of the organic solvent is generated. | 05-21-2009 |
| 20090165287 | MANUFACTURING METHOD FOR MAGNETIC HEAD SLIDER - A bar is cut from a wafer having head elements arrayed thereon along sectional surfaces parallel to each other and orthogonal to a wafer surface. One sectional surface is set as a medium opposing surface of a head slider. Polishing processing is performed on the bar, starting from a “surface corresponding to rear side” corresponding to a wafer rear surface, with a grinding surface rubbed in a transverse direction of the bar. The roughness of the “surface corresponding to rear side” of the bar is reduced. By suppressing the surface roughness in this way, a read element and write element among head elements can be obtained with high dimensional accuracy. Such a manufacturing method considerably contributes to reduction of a dimension error of a head element, in particular, a write element. | 07-02-2009 |
| 20090238952 | METHOD OF MANUFACTURING SLIDER - The method of manufacturing a head slider is capable of improving a floating characteristic and an electromagnetic conversion characteristic of the head slider. The method comprises the steps of: forming terminals on a leading end face of a row bar; forming a resist pattern, which corresponds to a configuration of an air bearing surface section to be formed on a facing surface of the row bar; partially thinning the facing surface of the row bar until reaching a groove surface so as to form the air bearing surface section; forming a base layer of a step section on the groove surface; forming a heater circuit, which is electrically connected to the terminals, on the base layer; and coating the base layer, on which the heater circuit has been formed, with a thermal expansion material layer so as to form the step section. | 09-24-2009 |
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| 20080200133 | Radio transmission apparatus having peak suppression function - A radio transmission apparatus executing peak suppression processing to an input signal in at least two stages, includes a first peak detector detecting a first peak, a maximum peak among peaks exceeding a first threshold, for a plurality of envelopes included in a predetermined input signal section; a second peak detector detecting a second peak exceeding a second threshold, on the basis of each input signal envelope; a first peak suppression unit suppressing the predetermined input signal section to the limit of a first level based on the first peak; a modulation signal generation unit generating a modulated signal modulated from the input signal suppressed by the first peak suppression unit; and a second peak suppression unit suppressing the second peak to the limit of a second level by each modulated signal envelope based on the first level and the second peak. | 08-21-2008 |
| 20080204136 | Distortion compensation apparatus - A distortion compensation apparatus includes an amplifier for amplifying an input signal, a calculation unit for obtaining a distortion compensation coefficient of the amplifier corresponding to an amplitude level of the input signal, based on the input signal input to the amplifier and an output signal output from the amplifier, a memory for storing the distortion compensation coefficient, obtained by the calculation unit, into a write address being made to correspond to the input signal amplitude level, a distortion compensation processing unit for reading out the distortion compensation coefficient from the readout address of the memory, and for performing distortion compensation processing of the input signal using the distortion compensation coefficient, and an address generator for generating the write address and the readout address, based on the input signal amplitude level. | 08-28-2008 |
| 20100148864 | Amplifier Control Device - A bias control signal generation unit detects ON and OFF of a transmission signal input to an amplifier and having a property of a burst according to burst information. The bias control signal generation unit controls a bias voltage to be applied to an amplifier such that an idle current flowing through the amplifier can be flowing in a larger amount in a transmission OFF period, and can return to a normal level in a transmission ON period. | 06-17-2010 |
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| 20090093071 | THERMAL TREATMENT APPARATUS, THERMAL TREATMENT METHOD AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE - A thermal treatment apparatus having a first light source emitting a first light having light diffusion property, a reflectance measuring unit irradiating a treatment target with the light from plural directions by the first light source and determining a light reflectance of the treatment target, a light irradiation controller adjusting an intensity of a second light of a second light source on the basis of the light reflectance, the second light has diffusion property, and a thermal treatment unit irradiating the treatment target with the second light having adjusted the intensity of the second light by the light irradiation controller. | 04-09-2009 |
| 20100311218 | SEMICONDUCTOR DEVICE, METHOD OF MANUFACTURING THE SAME, AND METHOD OF EVALUATING SEMICONDUCTOR DEVICE - A semiconductor device has: a silicon (semiconductor) substrate; a gate insulating film and a gate electrode, which are formed on the silicon substrate in this order; and source/drain material layers formed in recesses (holes) in the silicon substrate, the recesses being located beside the gate electrode. Here, each of side surfaces of the recesses, which are closer to the gate electrode, is constituted of at least one crystal plane of the silicon substrate. | 12-09-2010 |
| 20110019982 | Rapid thermal processing apparatus and method of manufacture of semiconductor device - A rapid thermal processing apparatus comprises a processing chamber which subjects a semiconductor substrate to rapid thermal processing. A substrate support part is arranged in the processing chamber and supports the substrate. A lamp part optically irradiates the substrate supported by the substrate support part and heats the substrate. A thermo sensor is provided to measure a temperature of the substrate. A temperature computing part computes the temperature of the substrate based on an output signal of the thermo sensor. A control part controls an irradiation intensity of the lamp part according to the temperature computed by the temperature computing part. In this apparatus, the control part is provided to correct a control parameter of the irradiation intensity of the lamp part based on a measured reflectivity of a surface of the substrate. | 01-27-2011 |
| 20110165703 | THERMAL TREATMENT APPARATUS, THERMAL TREATMENT METHOD AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE - A thermal treatment apparatus having a first light source emitting a first light having light diffusion property, a reflectance measuring unit irradiating a treatment target with the light from plural directions by the first light source and determining a light reflectance of the treatment target, a light irradiation controller adjusting an intensity of a second light of a second light source on the basis of the light reflectance, the second light has diffusion property, and a thermal treatment unit irradiating the treatment target with the second light having adjusted the intensity of the second light by the light irradiation controller. | 07-07-2011 |
